公开(公告)号：US20050115947A1

公开(公告)日：2005-06-02

申请号：US10985540

申请日：2004-11-10

申请人： Akihiro Hosokawa

发明人： Akihiro Hosokawa

IPC分类号： H01L21/683 ,  F27B17/00 ,  F27D5/00 ,  H01L21/00 ,  H01L21/22 ,  H01L21/26 ,  H01L21/265 ,  H01L21/324 ,  H01L21/8238 ,  A21B1/00 ,  A21B1/22 ,  F27D11/00 ,  H01L21/42 ,  H01L21/477

CPC分类号： H01L21/324 ,  F27B17/0025 ,  F27D5/0037 ,  H01L21/67115

摘要： In a thermal processing apparatus (1), an upper opening (60) of a chamber body (6) is closed by a transparent plate (61) and a light emitting part (5) emits light into the chamber body (6) through the upper opening (60). Inside the chamber body (6) provided are a susceptor (72) for supporting a substrate (9), a hot plate (71) for heating the susceptor (72) and a cover member (21) disposed between the transparent plate (61) and the susceptor (72). The susceptor (72) is provided with a recessed portion whose depth is larger than the thickness of the substrate (9), and a lower surface of the substrate (9) is supported by a bottom surface of the recessed portion and a periphery of the substrate (9) is surrounded by the side wall portion of the recessed portion. During a processing for the substrate (9), the cover member (21) is moved down and brought into contact with an upper end of the side wall portion of the recessed portion to close the recessed portion. This makes it possible to easily block the periphery of the substrate (9) inside the chamber body (6), and as a result, even if the substrate (9) is broken during the processing, it is possible to prevent the pieces of the substrate from being scattered.

摘要翻译： 在热处理装置（1）中，室主体（6）的上开口（60）由透明板（61）封闭，发光部分（5）通过 上开口（60）。 在所述腔室主体（6）内部设置有用于支撑基板（9）的基座（72），用于加热所述基座（72）的热板（71）和设置在所述透明板（61）之间的盖构件 和基座（72）。 基座（72）设置有深度大于基板（9）的厚度的凹部，基板（9）的下表面由凹部的底面和 基板（9）被凹部的侧壁部包围。 在基板（9）的处理期间，盖构件（21）向下移动并与凹部的侧壁部的上端接触以封闭凹部。 这使得可以容易地阻挡室体（6）内部的基板（9）的周边，结果即使在处理过程中基板（9）被破坏，也可以防止 底物被分散。

公开(公告)号：US20050016454A1

公开(公告)日：2005-01-27

申请号：US10842079

申请日：2004-05-10

申请人： Shinichi Kurita ,  Wendell Blonigan ,  Akihiro Hosokawa

发明人： Shinichi Kurita ,  Wendell Blonigan ,  Akihiro Hosokawa

IPC分类号： G02F1/13 ,  B65G49/06 ,  C23C14/56 ,  C23C16/44 ,  H01L21/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/677 ,  H01L21/687 ,  C23C16/00

CPC分类号： H01L21/68742 ,  B65G49/068 ,  B65G2249/02 ,  B65G2249/04 ,  C23C14/566 ,  C23C14/568 ,  C23C16/54 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67201 ,  H01L21/67739 ,  H01L21/67745 ,  H01L21/67748

摘要： One embodiment relates to a loadlock having a first support structure therein to support one unprocessed substrate and a second support structure therein to support one processed substrate. The first support structure is located above the second support structure. The loadlock includes an elevator to control the vertical position of the support structures. The loadlock also includes a first aperture to permit insertion of an unprocessed substrate into the loadlock and removal of a processed substrate from the loadlock, as well as a second aperture to permit removal of an unprocessed substrate from the loadlock and insertion of a processed substrate into the loadlock. A cooling plate is also located in the loadlock. The cooling plate includes a surface adapted to support a processed substrate thereon. A heating device may be located in the loadlock above the first support structure.

摘要翻译： 一个实施例涉及一种其中具有第一支撑结构的负载锁，用于支撑一个未处理的基板和其中的第二支撑结构以支撑一个处理的基板。 第一支撑结构位于第二支撑结构的上方。 负载锁包括用于控制支撑结构的垂直位置的电梯。 负载锁还包括第一孔，以允许将未处理的衬底插入到装载锁中并从加载锁中移除经处理的衬底，以及第二孔，以允许将未处理的衬底从负载锁上移除并将经处理的衬底插入 负载锁。 一个冷却板也位于负载锁中。 冷却板包括适于在其上支撑经处理的基板的表面。 加热装置可以位于第一支撑结构上方的装载锁中。

公开(公告)号：US06460369B2

公开(公告)日：2002-10-08

申请号：US09753424

申请日：2001-01-03

申请人： Akihiro Hosokawa

发明人： Akihiro Hosokawa

IPC分类号： F25D2504

CPC分类号： H01L21/67161 ,  C23C14/541 ,  C23C14/568 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67184 ,  H01L21/67236 ,  H01L21/67706 ,  H01L21/6776

摘要： An apparatus and method for processing substrates is provided, wherein the apparatus includes at least one substrate carrier for transporting a substrate within a processing environment. At least one temperature controlled plate positioned in the processing environment is selectively in communication with the at least one substrate carrier and is used to both transfer substrates from an external substrate shuttle to the substrate carrier in the processing environment and to regulate the temperature of the processing environment. At least one deposition device configured to deposit a selected film on the substrate and an annealing device are positioned proximate the at least one substrate carrier within the processing environment.

摘要翻译： 提供了一种用于处理衬底的设备和方法，其中该设备包括用于在处理环境内传送衬底的至少一个衬底载体。 定位在处理环境中的至少一个温度控制板选择性地与至少一个基板载体连通，并且用于将衬底从外部衬底梭子传送到处理环境中的衬底载体并且调节处理温度 环境。 至少一个沉积装置被配置成在衬底上沉积所选择的膜并且退火装置位于处理环境内的至少一个衬底载体附近。

公开(公告)号：US5799860A

公开(公告)日：1998-09-01

申请号：US511824

申请日：1995-08-07

申请人： Richard Ernest Demaray ,  Akihiro Hosokawa ,  Manuel J. Herrera

发明人： Richard Ernest Demaray ,  Akihiro Hosokawa ,  Manuel J. Herrera

IPC分类号： B23K20/00 ,  B23K20/14 ,  B23K20/24 ,  B23K35/00 ,  C23C14/34 ,  H01L21/203 ,  B23K20/16

CPC分类号： H01J37/3435 ,  B23K20/14 ,  B23K35/005 ,  C23C14/3407 ,  B23K20/24

摘要： A sputtering target assembly is fabricated by diffusion bonding a target material plate to a backing plate. The plates are cleaned in a vacuum environment, and an interlayer is formed on one or more of the plates. The plates are then joined under heat and pressure, before an oxide layer can form on the joining surfaces of the plates. The plates may be sequentially processed through cleaning, interlayer deposition, and bonding chambers, all with vacuum environments, to form the finished part, or, a single chamber may be used to provide the cleaning, interlayer deposition and bonding functions.

摘要翻译： 通过将目标材料板扩散连接到背板来制造溅射靶组件。 板在真空环境中清洁，并且在一个或多个板上形成中间层。 然后在热和压力下将板接合在氧化物层可以在板的接合表面上形成之前。 这些板可以通过清洁，层间沉积和粘合室依次加工，全部采用真空环境，以形成成品部件，或者可以使用单个室来提供清洁，层间淀积和粘合功能。

公开(公告)号：US5106200A

公开(公告)日：1992-04-21

申请号：US632942

申请日：1990-12-20

申请人： Akihiro Hosokawa

发明人： Akihiro Hosokawa

IPC分类号： G01J5/08 ,  G01J5/12 ,  G01R31/302

CPC分类号： G01J5/0003 ,  G01J5/0007 ,  G01J5/08 ,  G01J5/0815 ,  G01J5/12 ,  G01R31/302

摘要： An apparatus for measuring the temperature of a wafer by a non-contact method includes a supporting device, at a specified position on which the wafer is placed horizontally. A thermocouple is provided with a heat collector at one end thereof. The heat collector is disposed near but in non-contacting relationship with the wafer at the specified position. A reflector capable of reflecting radiant heat is disposed near the heat collector and on the opposite side thereof from the wafer such that radiant heat from the wafer can be efficiently collected by the heat collector.

摘要翻译： 用于通过非接触方法测量晶片的温度的装置包括在晶片水平放置的特定位置处的支撑装置。 热电偶的一端设有集热器。 集热器设置在与指定位置处的晶片接近但非接触的关系。 能够反射辐射热的反射器设置在热收集器附近并且与晶片的相对侧上，使得来自晶片的辐射热能够被集热器有效地收集。

公开(公告)号：US08714663B2

公开(公告)日：2014-05-06

申请号：US12097629

申请日：2006-12-15

申请人： Yoshinori Maeda ,  Yasuhiro Oshiumi ,  Michitaka Tsuchida ,  Kazuya Okumura ,  Kensuke Yoshizue ,  Akihiro Hosokawa ,  Koji Sugiyama

发明人： Yoshinori Maeda ,  Yasuhiro Oshiumi ,  Michitaka Tsuchida ,  Kazuya Okumura ,  Kensuke Yoshizue ,  Akihiro Hosokawa ,  Koji Sugiyama

IPC分类号： B60T8/60

CPC分类号： B60T8/1755 ,  B60L15/2036 ,  B60T2270/613 ,  B60W10/08 ,  B60W10/18 ,  B60W10/184 ,  B60W30/02 ,  B60W30/18127 ,  B60W40/11 ,  B60W40/112 ,  B60W40/114 ,  B60W2520/14 ,  B60W2520/30 ,  B60W2710/083 ,  B60W2720/30 ,  Y02T10/645 ,  Y02T10/72 ,  Y02T10/7275 ,  Y02T90/16

摘要： A target braking-driving force Fvn and a target yaw moment Mvn of the entire vehicle are calculated, and when the target braking-driving force Fvn and the target yaw moment Mvn cannot be achieved by the braking-driving forces of the front wheels, a target braking-driving force Fvft and a target yaw moment Mvft of the front wheels are adjusted such that the magnitudes of the braking-driving force and yaw moment of the vehicle produced by the braking-driving forces of the front wheels become the maximum at a ratio between Fvn and Mvn. A target braking-driving force Fvrt and a target yaw moment Mvrt of the rear wheels are calculated on the basis of Fvn, Mvn, Fvft, and Mvft, and similar adjustment is performed for them when necessarily.

摘要翻译： 计算整个车辆的目标制动驱动力Fvn和目标横摆力矩Mvn，并且当通过前轮的制动驱动力不能实现目标制动驱动力Fvn和目标横摆力矩Mvn时， 调整前轮的目标制动驱动力Fvft和目标横摆力矩Mvft，使得由前轮的制动驱动力产生的车辆的制动驱动力和横摆力矩的大小在a Fvn和Mvn之间的比值。 根据Fvn，Mvn，Fvft，和Mvft计算后轮的目标制动驱动力Fvrt和目标横摆力矩Mvrt，当必要时对它们进行类似的调整。

公开(公告)号：US07879210B2

公开(公告)日：2011-02-01

申请号：US11347667

申请日：2006-02-03

申请人： Makoto Inagawa ,  Akihiro Hosokawa ,  John M. White

发明人： Makoto Inagawa ,  Akihiro Hosokawa ,  John M. White

IPC分类号： C23C14/35

CPC分类号： H01J37/3408 ,  H01J37/3435 ,  H01J37/3455

摘要： A magnetron scanning and support mechanism in which the magnetron is partially supported from an overhead scanning mechanism through multiple springs coupled to different horizontal locations on the magnetron and partially supported from below at multiple locations on the target, on which it slides or rolls. In one embodiment, the yoke plate is continuous and uniform. In another embodiment, the magnetron's magnetic yoke is divided into two flexible yokes, for example, of complementary serpentine shape and each supporting magnets of respective polarity. The yokes separated by a gap sufficiently small that the two yokes are magnetically coupled. Each yoke has its own set of spring supports from above and rolling/sliding supports from below to allow the magnetron shape to conform to that of the target. Alternatively, narrow slots are formed in a unitary yoke.

摘要翻译： 一种磁控管扫描和支撑机构，其中磁控管通过耦合到磁控管上的不同水平位置的多个弹簧部分地从顶部扫描机构支撑，并且在靶上的多个位置处从其下方部分地支撑，在其上滑动或滚动。 在一个实施例中，轭板是连续且均匀的。 在另一个实施例中，磁控管的磁轭被分成两个柔性轭，例如互补的蛇形形状和各个极性的每个支撑磁体。 磁轭分开足够小的间隙，使得两个磁轭磁耦合。 每个轭具有其自己的一组弹簧支撑件，从上方起滚动/滑动支撑件，从而允许磁控管形状与靶材的形状一致。 或者，窄槽形成为单一轭。

公开(公告)号：US07815782B2

公开(公告)日：2010-10-19

申请号：US11426271

申请日：2006-06-23

申请人： Makoto Inagawa ,  Bradley O. Stimson ,  Akihiro Hosokawa ,  Hienminh Huu Le ,  Jrjyan Jerry Chen

发明人： Makoto Inagawa ,  Bradley O. Stimson ,  Akihiro Hosokawa ,  Hienminh Huu Le ,  Jrjyan Jerry Chen

IPC分类号： C23C14/35

CPC分类号： C23C14/3407 ,  C23C14/352 ,  C23C14/564 ,  H01J37/3435

摘要： A physical vapor deposition target assembly is configured to isolate a target-bonding layer from a processing region. In one embodiment, the target assembly comprises a backing plate, a target having a first surface and a second surface, and a bonding layer disposed between the backing plate and the second surface. The first surface of the target is in fluid contact with a processing region and the second surface of the target is oriented toward the backing plate. The target assembly may include multiple targets.

摘要翻译： 物理气相沉积靶组件被配置为将目标结合层与处理区域隔离。 在一个实施例中，目标组件包括背板，具有第一表面和第二表面的靶，以及设置在背板和第二表面之间的结合层。 目标的第一表面与处理区域流体接触，并且目标物的第二表面朝向背板取向。 目标组件可以包括多个目标。

公开(公告)号：US07628899B2

公开(公告)日：2009-12-08

申请号：US11301849

申请日：2005-12-12

申请人： John M. White ,  Hien-Minh H. Le ,  Akihiro Hosokawa

发明人： John M. White ,  Hien-Minh H. Le ,  Akihiro Hosokawa

IPC分类号： C25B9/00

CPC分类号： H01J37/3408 ,  H01J37/3455

摘要： The present invention generally provides an apparatus and method for processing a surface of a substrate in a PVD chamber that has a magnetron assembly whose shape can be distorted to adjust the magnetic field strength in the processing region of the deposition chamber to improve the deposition uniformity. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, the processing chamber contains one or more magnetron regions and magnetron actuators that are used to increase and more evenly distribute the magnetic field strength throughout the processing region of the processing chamber during processing.

摘要翻译： 本发明总体上提供了一种用于处理PVD室中的基板的表面的装置和方法，该PVD腔具有可以变形形状的磁控管组件，以调节沉积室的处理区域中的磁场强度，以提高沉积均匀性。 通常，本发明的各方面可用于平板显示处理，半导体处理，太阳能电池处理或任何其它基板处理。 在一个方面，处理室包含一个或多个磁控管区域和磁控管致动器，其用于在处理期间增加并且更均匀地分布整个处理室的处理区域的磁场强度。

公开(公告)号：US07566900B2

公开(公告)日：2009-07-28

申请号：US11216801

申请日：2005-08-31

申请人： Hienminh Huu Le ,  Akihiro Hosokawa

发明人： Hienminh Huu Le ,  Akihiro Hosokawa

IPC分类号： H01L29/10

CPC分类号： H01L21/67207 ,  C23C14/54 ,  C23C14/568 ,  C23C16/52 ,  C23C16/54 ,  H01L21/67253 ,  H01L21/67288

摘要： Embodiments of an apparatus and method of monitoring and controlling a large area substrate processing chamber are provided. Multiple types of metrology tools can be installed in the substrate processing system to measure film properties after substrate processing in a processing chamber. Several number of a particular type of metrology tools can also be installed in the substrate processing system to measure film properties after substrate processing in a processing chamber. The metrology tools can be installed in a metrology chamber, a process chamber, a transfer chamber, or a loadlock.

摘要翻译： 提供了一种监视和控制大面积衬底处理室的装置和方法的实施例。 可以在基板处理系统中安装多种计量工具，以在处理室中的基板处理之后测量膜性质。 也可以在基板处理系统中安装若干数量的特定类型的计量工具，以在处理室中的基板处理之后测量膜性质。 计量工具可以安装在计量室，处理室，转移室或装载锁中。