公开(公告)号：US08164109B2

公开(公告)日：2012-04-24

申请号：US13167664

申请日：2011-06-23

申请人： Mitsuaki Oya ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Akihiro Isozaki

发明人： Mitsuaki Oya ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Akihiro Isozaki

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/0095 ,  H01L33/16 ,  H01L33/32 ,  H01L2933/0016

摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and a metal layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

摘要翻译： 氮化物系半导体发光装置100具备：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体层叠结构体20上的电极30.电极30包括Zn层32和设置在Zn层32上的金属层34.Zn层32与p型半导体区域的表面接触 半导体多层结构20。

公开(公告)号：US08058639B2

公开(公告)日：2011-11-15

申请号：US13125367

申请日：2010-04-05

申请人： Akira Inoue ,  Masaki Fujikane ,  Toshiya Yokogawa

发明人： Akira Inoue ,  Masaki Fujikane ,  Toshiya Yokogawa

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L29/22 ,  H01L29/24 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/00

CPC分类号： H01L29/045 ,  H01L24/14 ,  H01L24/17 ,  H01L33/16 ,  H01L33/32 ,  H01L33/40 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05184 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01088 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/15787 ,  H01L2924/00 ,  H01L2924/00014

摘要： A light-emitting apparatus of the present invention includes: a mounting base 260 which has a wire 265; and a nitride-based semiconductor light-emitting device flip-chip mounted on the mounting base 260. The nitride-based semiconductor light-emitting device 100 includes a GaN-based substrate 10 which has an m-plane surface 12, a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN-based substrate 10, and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32. The Mg layer 32 is in contact with the surface of the p-type semiconductor region of the semiconductor multilayer structure 20. The electrode 30 is coupled to the wire 265.

摘要翻译： 本发明的发光装置包括：安装基座260，其具有线265; 以及安装在安装基座260上的氮化物系半导体发光装置倒装芯片。氮化物系半导体发光装置100具备：具有m面面12的GaN基基板10，半导体层叠结构体 设置在GaN基基板10的m面表面12上，以及设置在半导体多层结构20上的电极30.电极30包括Mg层32.Mg层32与 p型半导体区域。电极30与线265耦合。

公开(公告)号：US20110266575A1

公开(公告)日：2011-11-03

申请号：US13124162

申请日：2010-09-21

申请人： Naomi Anzue ,  Toshiya Yokogawa

发明人： Naomi Anzue ,  Toshiya Yokogawa

IPC分类号： H01L33/36 ,  H01L21/28 ,  H01L29/20

CPC分类号： H01L29/452 ,  H01L21/28575 ,  H01L24/14 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/32 ,  H01L33/40 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

摘要： A nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region, a surface of the p-type semiconductor region being an m-plane; and an electrode that is arranged on the p-type semiconductor region, wherein the p-type semiconductor region is made of an AlxGayInzN semiconductor (where x+y+z=1, x≧0, y≧0, and z≧0), and the electrode contains Mg, Zn and Ag.

摘要翻译： 氮化物类半导体器件包括：包含p型半导体区域的氮化物基半导体多层结构，p型半导体区域的表面是m面; 和配置在p型半导体区域上的电极，其中p型半导体区域由Al x Ga y In z N半导体（其中x + y + z = 1，x≥0，y≥0，z≥0） ，电极含有Mg，Zn和Ag。

公开(公告)号：US08039283B2

公开(公告)日：2011-10-18

申请号：US12159232

申请日：2006-12-20

申请人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Yoshiaki Matsuda

发明人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Yoshiaki Matsuda

IPC分类号： H01L21/301 ,  H01S5/02

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/78 ,  H01L33/0095 ,  H01S5/0202 ,  H01S5/22 ,  H01S5/2201 ,  Y10S148/028

摘要： The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure 40 supported by an upper face of the substrate. First, a wafer 1 to be split into individual substrates is provided. A plurality of semiconductor layers composing the multilayer structure 40 are grown on the wafer 1. By cleaving the wafer 1 and the semiconductor layers, a cleavage plane in the multilayer structure 40 is formed. In the present invention, a plurality of voids are arranged at positions in the multilayer structure at which a cleavage plane is to be formed. Thus, cleavage can be performed with a good yield.

摘要翻译： 本发明涉及一种氮化物化合物半导体元件的制造方法，所述氮化物化合物半导体元件包括由所述基板的上表面支撑的基板和多层结构体40。 首先，设置分割成各个基板的晶片1。 构成多层结构40的多个半导体层在晶片1上生长。通过切割晶片1和半导体层，形成多层结构40中的解理面。 在本发明中，在形成有解理面的多层结构体的位置配置多个空隙。 因此，可以以良好的产率进行裂解。

公开(公告)号：US20100226401A1

公开(公告)日：2010-09-09

申请号：US12159232

申请日：2006-12-20

申请人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Yoshiaki Matsuda

发明人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Yoshiaki Matsuda

IPC分类号： H01S5/02 ,  H01L21/301 ,  H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/78 ,  H01L33/0095 ,  H01S5/0202 ,  H01S5/22 ,  H01S5/2201 ,  Y10S148/028

摘要： The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure 40 supported by an upper face of the substrate. First, a wafer 1 to be split into individual substrates is provided. A plurality of semiconductor layers composing the multilayer structure 40 are grown on the wafer 1. By cleaving the wafer 1 and the semiconductor layers, a cleavage plane in the multilayer structure 40 is formed. In the present invention, a plurality of voids are arranged at positions in the multilayer structure at which a cleavage plane is to be formed. Thus, cleavage can be performed with a good yield.

摘要翻译： 本发明涉及一种氮化物化合物半导体元件的制造方法，所述氮化物化合物半导体元件包括由所述基板的上表面支撑的基板和多层结构体40。 首先，设置分割成各个基板的晶片1。 构成多层结构40的多个半导体层在晶片1上生长。通过切割晶片1和半导体层，形成多层结构40中的解理面。 在本发明中，在形成有解理面的多层结构体的位置配置多个空隙。 因此，可以以良好的产率进行裂解。

公开(公告)号：US20100148145A1

公开(公告)日：2010-06-17

申请号：US12161014

申请日：2007-01-17

申请人： Akihiko Ishibashi ,  Toshiya Yokogawa

发明人： Akihiko Ishibashi ,  Toshiya Yokogawa

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/0254 ,  H01L21/02576 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/305 ,  H01S5/3211

摘要： A nitride semiconductor light-emitting device according to the present invention includes a nitride based semiconductor substrate 10 and a nitride based semiconductor multilayer structure that has been formed on the semiconductor substrate 10. The multilayer structure includes an active layer 16 that produces emission and multiple semiconductor layers 12, 14 and 15 that have been stacked one upon the other between the active layer 16 and the substrate 10 and that include an n-type dopant. Each and every one of the semiconductor layers 12, 14 and 15 includes Al atoms.

摘要翻译： 根据本发明的氮化物半导体发光器件包括已经形成在半导体衬底10上的氮化物基半导体衬底10和基于氮化物的半导体多层结构。多层结构包括产生发射的多个半导体 层12,14和15已经在有源层16和衬底10之间彼此堆叠并且包括n型掺杂剂。 半导体层12,14和15中的每一个都包括Al原子。

公开(公告)号：US07606276B2

公开(公告)日：2009-10-20

申请号：US11570147

申请日：2006-05-12

申请人： Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Toshiya Yokogawa

发明人： Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Toshiya Yokogawa

IPC分类号： H01S5/00 ,  H01S3/097

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01S5/0207 ,  H01S5/0421 ,  H01S5/0425

摘要： A nitride semiconductor device 100 according to the present invention includes: an n-GaN substrate 1; a semiconductor multilayer structure, which has been formed on the principal surface of the n-GaN substrate 1 and which includes a p-type region and an n-type region; a p-electrode 32, which makes contact with a portion of the p-type region included in the semiconductor multilayer structure; and an n-electrode 34, which is arranged on the bottom surface of the substrate 1. The bottom surface of the substrate 1 includes a roughened region 40a and a flattened region 40b. And the n-electrode 34 covers the roughened region 40a at least partially.

摘要翻译： 根据本发明的氮化物半导体器件100包括：n-GaN衬底1; 形成在n-GaN衬底1的主表面上并且包括p型区和n型区的半导体多层结构; p电极32，其与包括在半导体多层结构中的p型区域的一部分接触; 以及设置在基板1的底面的n电极34.基板1的底面包括粗糙区域40a和平坦化区域40b。 n电极34至少部分地覆盖粗糙区域40a。

公开(公告)号：US20090059983A1

公开(公告)日：2009-03-05

申请号：US12258881

申请日：2008-10-27

申请人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Akihiko Ishibashi

发明人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Akihiko Ishibashi

IPC分类号： H01S5/323

CPC分类号： B82Y20/00 ,  H01S5/0425 ,  H01S5/2004 ,  H01S5/22 ,  H01S5/2205 ,  H01S5/34333 ,  H01S2301/173

摘要： A nitride semiconductor light-emitting device is provided including: a substrate made of a nitride semiconductor; a semiconductor layer made of a nitride semiconductor containing a p-type impurity, the semiconductor layer being formed as contacting an upper surface of the substrate; a first cladding layer made of a nitride semiconductor containing an impurity of a first conductivity type, the first cladding layer being formed on the semiconductor layer; an active layer formed on the first cladding layer; and a second cladding layer made of a nitride semiconductor containing an impurity of a second conductivity type, the second cladding layer being formed on the active layer.

摘要翻译： 提供了一种氮化物半导体发光器件，包括：由氮化物半导体制成的衬底; 由包含p型杂质的氮化物半导体制成的半导体层，所述半导体层形成为与所述衬底的上表面接触; 由包含第一导电类型的杂质的氮化物半导体制成的第一包层，所述第一包层形成在所述半导体层上; 形成在所述第一包层上的有源层; 以及由包含第二导电类型的杂质的氮化物半导体制成的第二覆层，所述第二覆层形成在所述有源层上。

公开(公告)号：US07396697B2

公开(公告)日：2008-07-08

申请号：US10537868

申请日：2004-04-06

申请人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Atsushi Yamada

发明人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Atsushi Yamada

IPC分类号： H01L21/00

CPC分类号： B82Y20/00 ,  H01S5/0213 ,  H01S5/2201 ,  H01S5/2206 ,  H01S5/2216 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： A method for fabricating a semiconductor light-emitting element according to the present invention includes the steps of (A) providing a striped masking layer on a first Group III-V compound semiconductor, (B) selectively growing a second Group III-V compound semiconductor over the entire surface of the first Group III-V compound semiconductor except a portion covered with the masking layer, thereby forming a current confining layer that has a striped opening defined by the masking layer, (C) selectively removing the masking layer, and (D) growing a third Group III-V compound semiconductor to cover the surface of the first Group III-V compound semiconductor, which is exposed through the striped opening, and the surface of the current confining layer.

摘要翻译： 根据本发明的制造半导体发光元件的方法包括以下步骤：（A）在第一III-V族化合物半导体上提供条纹掩模层，（B）选择性地生长第二III-V族化合物半导体 在除了被掩模层覆盖的部分之外的第一III-V族化合物半导体的整个表面上，由此形成具有由掩模层限定的条纹开口的电流限制层，（C）选择性地去除掩模层，和 D）生长第三组III-V族化合物半导体以覆盖通过条纹开口暴露的第一III-V族化合物半导体的表面和电流限制层的表面。

公开(公告)号：US07221690B2

公开(公告)日：2007-05-22

申请号：US10643944

申请日：2003-08-20

申请人： Yoshiaki Hasegawa ,  Toshiya Yokogawa

发明人： Yoshiaki Hasegawa ,  Toshiya Yokogawa

IPC分类号： H01S3/04

CPC分类号： B82Y20/00 ,  H01S5/22 ,  H01S5/3072 ,  H01S5/321 ,  H01S5/3211 ,  H01S5/343 ,  H01S5/34333 ,  H01S2304/12

摘要： This specification relates to a semiconductor laser in which an n-type semiconductor layer (13), an active layer (101), and a p-type semiconductor layer (24) are stacked in this order on a substrate (11), the active layer (101) comprising a well layer composed of InGaN, the semiconductor laser comprising an intermediate layer (21) sandwiched between the active layer (101) and the p-type semiconductor layer (24), and the intermediate layer including no intentionally added impurities and being composed of a gallium nitride-based compound semiconductor. This semiconductor laser has an extended lifetime under high optical output power conditions.

摘要翻译： 本说明书涉及其中n型半导体层（13），有源层（101）和p型半导体层（24）依次层叠在基板（11）上的半导体激光器， 包括由InGaN构成的阱层的层（101），所述半导体激光器包括夹在有源层（101）和p型半导体层（24）之间的中间层（21），所述中间层不包括有意添加的杂质 并且由氮化镓系化合物半导体构成。 该半导体激光器在高光输出功率条件下具有延长的寿命。