Vertical wafer boat
    53.
    发明授权
    Vertical wafer boat 失效
    立式晶圆船

    公开(公告)号:US6065615A

    公开(公告)日:2000-05-23

    申请号:US805227

    申请日:1997-02-24

    IPC分类号: H01L21/673 A47F7/00

    CPC分类号: H01L21/67303 H01L21/67306

    摘要: A pair of annular end plates and a plurality of bars which are made of silicon carbide are formed in an integrally coupled/joined structure, having an entire length of not less than 800 mm. The end plates are unitary annular plates. Padding of silicon carbide is formed at a coupled/joined portion between an end plate and a bar so that the coupled/joined portion exhibits an obtuse corner.

    摘要翻译: 一对环形端板和由碳化硅制成的多个杆形成为整体结合/接合的结构,其整个长度不小于800mm。 端板是单一的环形板。 在端板和棒之间的耦合/接合部分处形成碳化硅填料,使得耦合/接合部分呈钝角。

    Combustion appliance for liquid fuel
    54.
    发明授权
    Combustion appliance for liquid fuel 失效
    液体燃料燃烧器具

    公开(公告)号:US6010334A

    公开(公告)日:2000-01-04

    申请号:US91436

    申请日:1998-06-29

    摘要: In a combustion appliance provided with a combustion wick for sucking up a liquid fuel by the utilization of capillarity and burning it, functions for automatically extinguishing the fire after the combustion has been carried out for a predetermined length of time are constituted with a simple mechanism. The combustion wick (6), which comprises a sucking section for sucking up a liquid fuel by the utilization of capillarity and a burning section for burning the sucked-up liquid fuel, is divided at an intermediate position into a burning section side subdivision (6A) and a sucking section side subdivision (6B). The combustion wick (6) is located such that at least either one of the subdivisions can be moved in a direction that comes into contact with the other and in a direction that separates from the other. The fuel is fed from the sucking section side subdivision (6B) to the burning section side subdivision (6A) when they are brought into contact with each other. The feeding of the fuel is blocked when the subdivisions are separated from each other, and a combustion time is thereby limited.

    摘要翻译: PCT No.PCT / JP97 / 03885第 371日期1998年6月29日第 102(e)日期1998年6月29日PCT 1997年10月27日PCT公布。 公开号WO98 / 19109 日期1998年5月7日在具有燃烧芯的燃烧器具中,通过利用毛细管作用吸收液体燃料并燃烧,燃烧后自动灭火预定时间长度的功能由 一个简单的机制。 包括用于利用毛细管吸入液体燃料的吸入部分和用于燃烧被吸入的液体燃料的燃烧部分的燃烧芯(6)在中间位置分成燃烧部分侧分部(6A )和吸引部侧分部(6B)。 燃烧芯(6)定位成使得至少任一个细分可以在与另一个分开的方向上并且在与另一个分离的方向上移动。 当它们彼此接触时,燃料从吸入部侧分部(6B)供给到燃烧部侧分部(6A)。 当分部彼此分离时,燃料的供给被堵塞,从而限制了燃烧时间。

    Data processor in which external sync signal may be selectively inhibited

    公开(公告)号:US5493686A

    公开(公告)日:1996-02-20

    申请号:US434292

    申请日:1995-05-03

    IPC分类号: G06F1/10 G06F1/04 G06F15/78

    CPC分类号: G06F1/10

    摘要: An external sync signal generated by a clock generation circuit inside a single-chip microcomputer is supplied to an external terminal of this chip. The external sync signal is necessary in an external expansion mode but not in a single-chip mode. Therefore, the external sync signal is supplied to the external terminal through a control gate while a suitable control signal is inputted to a control terminal of the control gate. According to this circuit construction, control can be made in such a manner that the external sync signal is not supplied to the output terminal in the single-chip mode. As a result, it becomes possible to prevent noise from entering a signal supplied to an adjacent pin through a coupling capacity between the external terminals in the single-chip mode, and to reduce consumed power of an output buffer circuit which is disposed between the control gate and the external terminals.

    Plasma treatment device and plasma treatment method
    57.
    发明授权
    Plasma treatment device and plasma treatment method 有权
    等离子处理装置和等离子体处理方法

    公开(公告)号:US08771537B2

    公开(公告)日:2014-07-08

    申请号:US13391196

    申请日:2010-08-10

    IPC分类号: B44C1/22

    摘要: Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved.

    摘要翻译: 改善基板表面上的等离子体工艺的均匀性。 在通过从处理容器中导入的处理气体产生等离子体来处理基板的等离子体处理装置中,导入到处理容器内的基板的中心部分的加工气体的导入量与导入量 在等离子体处理中改变了被引入处理容器内的基板周边部分的处理气体。 因此,可以减小衬底的中心部分和周边部分之间的蚀刻速率等的变化。 因此,提高了衬底表面上的等离子体处理的均匀性。