公开(公告)号：US20120217510A1

公开(公告)日：2012-08-30

申请号：US13468486

申请日：2012-05-10

申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

IPC分类号： H01L33/32 ,  H01L33/40

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40

摘要： A method of producing a light-emitting semiconductor device of a group III nitride compound includes forming a high carrier concentration N+-layer satisfying the formula (Alx3Ga1-x3)y3In1-y3N, wherein 0≦x3≦1, 0≦y3≦1 and 0≦x3+y3≦1, forming an emission layer of a group III nitride compound semiconductor satisfying the formula, Alx1Gay1In1-x1-y1N, where 0≦x1≦1, 0≦y1≦1 and 0≦x1+y1≦1 on the high carrier concentration layer N+-layer, and forming a P-layer of a P-type conduction, on the emission layer, the P-layer including aluminum gallium nitride satisfying the formula Alx2Ga1-x2N, wherein 0≦x2≦1.

摘要翻译： 制备III族氮化物化合物的发光半导体器件的方法包括形成满足式（Al x Ga Ga 1-x 3）y 3 In 1-y 3 N的高载流子浓度N +层，其中0＆nlE; x3＆nlE; 1,0

公开(公告)号：US20110254051A1

公开(公告)日：2011-10-20

申请号：US13171115

申请日：2011-06-28

申请人： Yukio Tsuzuki ,  Makoto Asai

发明人： Yukio Tsuzuki ,  Makoto Asai

IPC分类号： H01L27/06 ,  H01L21/82

CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7806

摘要： A semiconductor device includes an n-conductive type semiconductor substrate having a main side and a rear side, a p-conductive type layer arranged over the main side of the substrate, a main side n-conductive type region arranged in the p-conductive type layer, a rear side n-conductive type layer arranged over the rear side of the substrate, a first trench which reaches the substrate and penetrates the main side n-conductive type region and the p-conductive type layer, a second trench which reaches an inside of the p-conductive type layer, a second electrode layer, which is embedded in the second trench and connected to the p-conductive type layer. Hereby, the semiconductor device, in which the recovery property of a diode cell can be improved without damaging the property of a MOS transistor cell or an IGBT cell and the surge withstand property does not deteriorate, can be obtained.

摘要翻译： 半导体器件包括具有主侧和后侧的n导电型半导体衬底，布置在衬底的主侧上的p导电型层，以p导电型布置的主侧n导电型区域 层，布置在基板的后侧上的后侧n导电型层，到达基板并穿透主侧n导电型区域和p导电型层的第一沟槽，到达基板的第二沟槽 在p导电型层的内部，嵌入在第二沟槽中并连接到p导电型层的第二电极层。 因此，可以获得其中二极管电池的恢复特性可以在不损害MOS晶体管单元或IGBT单元的性能而不损坏浪涌耐受性的情况下得到的半导体器件。

公开(公告)号：US07662668B2

公开(公告)日：2010-02-16

申请号：US11591496

申请日：2006-11-02

申请人： Kazuhiko Sugiura ,  Kenichi Yokoyama ,  Muneo Tamura ,  Tetsuo Fujii ,  Makoto Asai

发明人： Kazuhiko Sugiura ,  Kenichi Yokoyama ,  Muneo Tamura ,  Tetsuo Fujii ,  Makoto Asai

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  B23K26/16 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2924/3025

摘要： A separating device for separating a semiconductor substrate includes: a cutting element for cutting the semiconductor substrate into a plurality of chips along with a cutting line on the semiconductor substrate; an adsorbing element for adsorbing a dust on a surface of the semiconductor substrate by using electrostatic force; and a static electricity generating element for generating static electricity and for controlling the static electricity in order to remove the dust from the adsorbing element.

摘要翻译： 用于分离半导体衬底的分离装置包括：用于将半导体衬底与半导体衬底上的切割线一起切割成多个芯片的切割元件; 用于通过使用静电力吸附在所述半导体衬底的表面上的灰尘的吸附元件; 以及用于产生静电并用于控制静电以便从吸附元件去除灰尘的静电发生元件。

公开(公告)号：US20070111483A1

公开(公告)日：2007-05-17

申请号：US11594898

申请日：2006-11-09

申请人： Yumi Maruyama ,  Makoto Asai

发明人： Yumi Maruyama ,  Makoto Asai

IPC分类号： H01L21/00

CPC分类号： H01L21/67132 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B28D5/0011 ,  B28D5/0052 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/12 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/13099 ,  H01L2224/29 ,  H01L2224/29007 ,  H01L2224/29298 ,  H01L2224/32014 ,  H01L2224/83101 ,  H01L2224/83194 ,  H01L2224/8385 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/0132 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/15787 ,  H01L2924/01014 ,  H01L2924/01031 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： A semiconductor substrate is bonded to a joining face of a sheet and is dividable along predetermined dividing lines of the semiconductor substrate by expanding the sheet so as to form semiconductor chips. A bonding layer for bonding a substrate face of the semiconductor substrate and the joining face of the sheet to each other can be formed in each region encircled with the predetermined dividing lines, between the substrate face and the joining face of the sheet. Thus, when the substrate face of the semiconductor substrate and the joining face of the sheet are bonded to each other, the bonding layer does not reach any of the predetermined dividing lines set between the regions. The bonding layer can be formed in dotted segments or a pattern of lattice between the substrate face of the semiconductor substrate and the joining face of the sheet.

摘要翻译： 半导体基板被接合到片材的接合面，并且可以通过使片材膨胀从而沿着半导体衬底的预定划分线分割以形成半导体芯片。 用于将半导体衬底的衬底表面和片材的接合面彼此接合的接合层可以在衬底表面和片材的接合面之间的每个区域中形成有围绕预定划分线的每个区域。 因此，当半导体基板的基板面和薄板的接合面彼此接合时，接合层不会到达设置在这些区域之间的任何预定划分线。 接合层可以以虚线部分或半导体衬底的衬底面与片的接合面之间的格子图案形成。

公开(公告)号：US20060257440A1

公开(公告)日：2006-11-16

申请号：US10557274

申请日：2004-05-18

申请人： Makoto Asai ,  Rieko Nakamura

发明人： Makoto Asai ,  Rieko Nakamura

IPC分类号： A01N43/40 ,  A01N65/00 ,  A01N25/00

CPC分类号： A01N47/40 ,  A01N51/00 ,  A01N25/32 ,  A01N25/02 ,  A01N25/30 ,  A01N2300/00

摘要： The present invention relates to an insecticidal composition including (1) a chloronicotinyl compound as an insecticidally active ingredient, (2) an organic solvent which is a mixed solvent comprising dimethyl sulfoxide and either dimethylacetamide or γ-butyrolactone or is a ternary solvent comprising the mixed solvent and N-methylpyrrolidone added thereto, and (3) a castor oil surfactant or a propylene oxide/ethylene oxide block copolymer surfactant. The composition is less irritating to the eyes. It is less apt to exhibit crystal preciptation even at low temperatures and evenly dissolves in water. It has excellent biological activity.

摘要翻译： 本发明涉及杀虫组合物，其包含（1）作为杀虫活性成分的氯代烟碱化合物，（2）有机溶剂，其是包含二甲基亚砜和二甲基乙酰胺或γ-丁内酯的混合溶剂，或是包含混合的三元溶剂 溶剂和N-甲基吡咯烷酮，和（3）蓖麻油表面活性剂或环氧丙烷/环氧乙烷嵌段共聚物表面活性剂。 组合物对眼睛的刺激性较小。 即使在低温下，也不太容易出现晶体诱导，并且均匀地溶解在水中。 它具有优良的生物活性。

公开(公告)号：US07001790B2

公开(公告)日：2006-02-21

申请号：US09783035

申请日：2001-02-15

申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40

摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.

摘要翻译： 发光半导体器件（10）连续地包括蓝宝石衬底（1），AlN缓冲层（2），高载体的硅（Si）掺杂GaN n + +层（3） （n型）浓度，Si掺杂（Al x3 Ga 1-x 3）y 3在1-y 3中， 具有高载流子（n型）浓度的氮（Zn）和Si掺杂（Al 2 x 2 Ga 2） 1-x2 Y2在1-y2 N发射层（5）中，以及Mg掺杂（Al x1 Ga） 在1-y1 N p层（6）中。 AlN层（2）的厚度为500埃。 GaN n + +（3）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 n + +层（4）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 发射层（5）的厚度约为0.5μm。 p层6具有约1.0μm厚度和2×10 17 / cm 3孔浓度。 镍电极（7,8）分别连接到p层（6）和n + +层（4）。 一个凹槽（9）使电极（7,8）电绝缘。 选择各层（4,5,6）中的Al，Ga和In的组成比以满足n +层（3）中的GaN的晶格常数。 LED（10）被设计为提高发光强度并获得更纯的蓝色。

公开(公告)号：US20060008936A1

公开(公告)日：2006-01-12

申请号：US11172787

申请日：2005-07-05

申请人： Makoto Asai

发明人： Makoto Asai

IPC分类号： H01L21/00 ,  H01L21/30

CPC分类号： B81C1/00142 ,  B81B2201/0292 ,  B81B2203/0118 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

摘要： A method for manufacturing a semiconductor physical quantity sensor is provided. The sensor includes a multi-layered substrate, a cavity, a groove, a movable portion and a fixed portion. The multi-layered substrate includes a support substrate, an embedded insulation film, and a semiconductor layer. The method includes the steps of: preparing the multi-layered substrate having a sacrifice layer embedded in the semiconductor layer so that the sacrifice layer is disposed at a cavity-to-be-formed portion; forming the groove from the semiconductor layer to reach the sacrifice layer; and selectively etching the sacrifice layer from a bottom of the groove to form a cavity.

摘要翻译： 提供一种半导体物理量传感器的制造方法。 传感器包括多层基板，空腔，凹槽，可移动部分和固定部分。 多层基板包括支撑基板，嵌入式绝缘膜和半导体层。 该方法包括以下步骤：制备具有嵌入在半导体层中的牺牲层的多层基板，使得牺牲层设置在待形成腔部分; 从半导体层形成凹槽到达牺牲层; 并且从凹槽的底部选择性地蚀刻牺牲层以形成空腔。

公开(公告)号：US20060008935A1

公开(公告)日：2006-01-12

申请号：US11169583

申请日：2005-06-30

申请人： Makoto Asai

发明人： Makoto Asai

IPC分类号： H01L21/306 ,  G01P15/125

CPC分类号： B81C1/00626 ,  B81B2201/0235 ,  B81B2201/0292 ,  B81B2203/0118 ,  B81C2201/014 ,  B81C2201/019 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

摘要： A physical quantity sensor includes: a semiconductor substrate; a cavity disposed in the substrate and extending in a horizontal direction of the substrate; a groove disposed on the substrate and reaching the cavity; a movable portion separated by the cavity and the groove so that the movable portion is movably supported on the substrate; and an insulation layer disposed on a bottom of the movable portion so that the insulation layer provides a roof of the cavity.

摘要翻译： 物理量传感器包括：半导体衬底; 设置在所述基板中并在所述基板的水平方向上延伸的空腔; 设置在所述基板上并到达所述空腔的凹槽; 可移动部分，由空腔和沟槽分隔开，使得可移动部分可移动地支撑在基板上; 以及设置在所述可动部分的底部上的绝缘层，使得所述绝缘层提供所述空腔的顶部。

公开(公告)号：US06861663B2

公开(公告)日：2005-03-01

申请号：US09522832

申请日：2000-03-10

申请人： Katsuhisa Sawazaki ,  Makoto Asai ,  Naoki Kaneyama

发明人： Katsuhisa Sawazaki ,  Makoto Asai ,  Naoki Kaneyama

IPC分类号： H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/42 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

CPC分类号： H01L33/32 ,  Y10S977/815

摘要： A buffer layer of aluminum nitride (AlN) about 25 nm thick is provided on a sapphire substrate. An n+ layer of a high carrier density, which is about 4.0 μm thick and which is made of GaN doped with silicon (Si), is formed on the buffer layer. An intermediate layer of non-doped InxGa1−xN (0

摘要翻译： 在蓝宝石衬底上设置约25nm厚的氮化铝缓冲层（AlN）。 在缓冲层上形成厚度约为4.0μm的由载流子浓度高的掺杂有硅（Si）的GaN构成的n +层。 在高载流子密度n +层上形成约3000埃厚的非掺杂In x Ga 1-x N（0

公开(公告)号：US06762070B2

公开(公告)日：2004-07-13

申请号：US10192699

申请日：2002-07-11

申请人： Naoki Kaneyama ,  Makoto Asai ,  Katsuhisa Sawazaki

发明人： Naoki Kaneyama ,  Makoto Asai ,  Katsuhisa Sawazaki

IPC分类号： H01L2100

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01S5/0421 ,  H01S5/34333

摘要： A cap layer of GaN about 140 Å thick and a p-type clad layer of Mg-doped p-type AlxGa1-xN (x=0.12) about 200 Å thick are formed successively on an MQW active layer about 230 Å thick. A p-type contact layer of Mg-doped p-type AlyGa1-yN (y=0.05) about 600 Å thick is further formed thereon. These composition ratios x and y are selected to satisfy the expression “0.03≦0.3x≦y≦0.5x≦0.08”, so that the composition of the p-type contact layer becomes close to the composition of the p-type clad layer.

摘要翻译： 在大约大的厚度的MQW有源层上依次形成厚度大约为140埃的覆盖层和约200埃的Mg掺杂的p型Al x Ga 1-x N（x = 0.12）的p型覆盖层。 在其上进一步形成约600埃厚的Mg掺杂的p型Al y Ga 1-y N（y = 0.05）的p型接触层。 选择这些组成比x和y以满足表达式“0.03 <= 0.3×<= y <= 0.5×<= 0.08”，使得p型接触层的组成变得接近p- 型覆层。