公开(公告)号：US10262955B2

公开(公告)日：2019-04-16

申请号：US15187873

申请日：2016-06-21

Applicant: International Business Machines Corporation

Inventor： Cyril Cabral, Jr. ,  Gregory M. Fritz ,  Conal E. Murray ,  Kenneth P. Rodbell

IPC: H01L23/58 ,  H01L23/00 ,  H01L31/02 ,  H01L31/0203 ,  H01L23/06 ,  H01L23/04 ,  H01L23/34 ,  H01L23/525 ,  H01L25/16

Abstract: Embodiments of the present invention provide integrated circuits and methods for activating reactions in integrated circuits. In one embodiment, an integrated circuit is provided having reactive material capable of being activated by electrical discharge, without requiring a battery or similar external power source, to produce an exothermic reaction that erases and/or destroys one or more semiconductor devices on the integrated circuit.

公开(公告)号：US20190023963A1

公开(公告)日：2019-01-24

申请号：US15926663

申请日：2018-03-20

Applicant: International Business Machines Corporation

Inventor： Cyril Cabral, JR. ,  Gregory M. Fritz ,  Kenneth P. Rodbell

IPC: C09K5/18 ,  C23C28/00

Abstract: A reactive material stack with tunable ignition temperatures is provided by inserting a barrier layer between layers of reactive materials. The barrier layer prevents the interdiffusion of the reactive materials, thus a reaction between reactive materials only occurs at an elevated ignition temperature when a certain energy threshold is reached.

公开(公告)号：US20190011573A1

公开(公告)日：2019-01-10

申请号：US15843282

申请日：2017-12-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Michael S. Gordon ,  John G. Massey ,  Kenneth P. Rodbell

IPC: G01T1/02 ,  G21K1/02

Abstract: A radiation exposure system having a beam source is provided. The system further includes a variable thickness degrader, positioned between the beam source and an object to be exposed, for providing varying degrees of degradation to a radiation beam emitted from the beam source onto the object. The system also includes a set of detectors, positioned between the variable thickness degrader and the object, for receiving and measuring only a portion of the radiation beam remaining after the degradation of the radiation beam by the variable thickness degrader.

公开(公告)号：US10115750B2

公开(公告)日：2018-10-30

申请号：US15601020

申请日：2017-05-22

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Michael S. Gordon ,  Tak H. Ning ,  Kenneth P. Rodbell ,  Jeng-Bang Yau

IPC: H01L27/144 ,  H01L31/118 ,  H01L31/18

Abstract: An integrated radiation sensor for detecting the presence of an environmental material and/or condition includes a sensing structure and first and second lateral bipolar junction transistors (BJTs) having opposite polarities. The first lateral BJT has a base that is electrically coupled to the sensing structure and is configured to generate an output signal indicative of a change in stored charge in the sensing structure. The second lateral BJT is configured to amplify the output signal of the first bipolar junction transistor. The first and second lateral BJTs, the sensing structure, and the substrate on which they are formed comprise a monolithic structure.

公开(公告)号：US20180113969A1

公开(公告)日：2018-04-26

申请号：US15626582

申请日：2017-06-19

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qianwen Chen ,  Li-Wen Hung ,  Wanki Kim ,  John U. Knickerbocker ,  Kenneth P. Rodbell ,  Robert L. Wisnieff

IPC: G06F17/50 ,  G06F15/78

CPC classification number: G06F17/5027 ,  G06F15/7803 ,  G06F15/7807 ,  G06F15/7857 ,  G06F15/803 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L24/17 ,  H01L25/065 ,  H01L25/0655 ,  H01L25/071 ,  H01L25/112 ,  H01L25/115 ,  H01L25/18 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/08225 ,  H01L2224/11002 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/80006 ,  H01L2224/81005 ,  H01L2924/1205 ,  H01L2924/1206 ,  H01L2924/13051 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1421 ,  H01L2924/1432 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19105

Abstract: A method of forming an electrical device is provided that includes forming microprocessor devices on a microprocessor die; forming memory devices on an memory device die; forming component devices on a component die; and forming a plurality of packing devices on a packaging die. Transferring a plurality of each of said microprocessor devices, memory devices, component devices and packaging components to a supporting substrate, wherein the packaging components electrically interconnect the memory devices, component devices and microprocessor devices in individualized groups. Sectioning the supporting substrate to provide said individualized groups of memory devices, component devices and microprocessor devices that are interconnected by a packaging component.

公开(公告)号：US09890075B2

公开(公告)日：2018-02-13

申请号：US15002359

申请日：2016-01-20

Applicant: International Business Machines Corporation

Inventor： Qiang Huang ,  Kenneth P. Rodbell ,  Asli Sahin

IPC: C03C21/00 ,  C03C3/00

CPC classification number: C03C21/002 ,  C03C3/00

Abstract: In one aspect, a method for use in preparing a glass includes performing an ion exchange process by treating the glass with a eutectic mixture including at least a first rubidium salt. In another aspect, a glass is prepared at least in part by performing an ion exchange process by treating the glass with a eutectic mixture including at least a first rubidium salt.

公开(公告)号：US09738560B2

公开(公告)日：2017-08-22

申请号：US15163260

申请日：2016-05-24

Applicant: International Business Machines Corporation

Inventor： Cyril Cabral, Jr. ,  Fuad E. Doany ,  Gregory M. Fritz ,  Michael S. Gordon ,  Qiang Huang ,  Eric P. Lewandowski ,  Xiao Hu Liu ,  Kenneth P. Rodbell ,  Thomas M. Shaw

IPC: C03C17/06 ,  C03C15/00 ,  C03C23/00 ,  C03B23/203 ,  G03F7/20 ,  C03C17/34 ,  C03C21/00 ,  C03C27/06

CPC classification number: C03C17/06 ,  C03B23/203 ,  C03C15/00 ,  C03C17/34 ,  C03C21/002 ,  C03C23/0055 ,  C03C27/06 ,  C03C2217/252 ,  C03C2217/261 ,  C03C2218/32 ,  C03C2218/328 ,  C03C2218/34 ,  G03F7/20

Abstract: A method of manufacturing a glass substrate to control the fragmentation characteristics by etching and filling trenches in the glass substrate is disclosed. An etching pattern may be determined. The etching pattern may outline where trenches will be etched into a surface of the glass substrate. The etching pattern may be configured so that the glass substrate, when fractured, has a smaller fragmentation size than chemically strengthened glass that has not been etched. A mask may be created in accordance with the etching pattern, and the mask may be applied to a surface of the glass substrate. The surface of the glass substrate may then be etched to create trenches. A filler material may be deposited into the trenches.

公开(公告)号：US20170204004A1

公开(公告)日：2017-07-20

申请号：US15429994

申请日：2017-02-10

Applicant: International Business Machines Corporation

Inventor： Qiang Huang ,  Kenneth P. Rodbell ,  Asli Sahin

IPC: C03C21/00

CPC classification number: C03C21/002 ,  C03C3/00

Abstract: In one aspect, a method for use in preparing a glass comprises: performing a first ion exchange process to replace at least a first ion in the glass with at least a second ion, the second ion being smaller than the first ion; and performing a second ion exchange process to replace at least the second ion in the glass with at least a third ion, the third ion being larger than the first ion. In another aspect, a glass is prepared at least in part by: performing a first ion exchange process to replace at least a first ion in the glass with at least a second ion, the second ion being smaller than the first ion; and performing a second ion exchange process to replace at least the second ion in the glass with at least a third ion, the third ion being larger than the first ion.

公开(公告)号：US20170092694A1

公开(公告)日：2017-03-30

申请号：US14871030

申请日：2015-09-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Matthew J. BrightSky ,  Cyril Cabral, JR. ,  Kenneth P. Rodbell

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2463 ,  G11C13/0004 ,  G11C13/003 ,  G11C13/0059 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2013/008 ,  G11C2213/50 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1286 ,  H01L45/143 ,  H01L45/144 ,  H01L45/16

Abstract: A reactive material erasure element comprising a reactive material is located between PCM cells and is in close proximity to the PCM cells. The reaction of the reactive material is trigger by a current applied by a bottom electrode which has a small contact area with the reactive material erasure element, thereby providing a high current density in the reactive material erasure element to ignite the reaction of the reactive material. Due to the close proximity of the PCM cells and the reactive material erasure element, the heat generated from the reaction of the reactive material can be effectively directed to the PCM cells to cause phase transformation of phase change material elements in the PCM cells, which in turn erases data stored in the PCM cells.

公开(公告)号：US20160300802A1

公开(公告)日：2016-10-13

申请号：US15187873

申请日：2016-06-21

Applicant: International Business Machines Corporation

Inventor： Cyril Cabral, JR. ,  Gregory M. Fritz ,  Conal E. Murray ,  Kenneth P. Rodbell

IPC: H01L23/00 ,  H01L23/525 ,  H01L23/04 ,  H01L31/02 ,  H01L31/0203 ,  H01L25/16 ,  H01L23/34

CPC classification number: H01L23/576 ,  H01L23/04 ,  H01L23/06 ,  H01L23/345 ,  H01L23/525 ,  H01L23/573 ,  H01L25/16 ,  H01L31/02019 ,  H01L31/02021 ,  H01L31/0203 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present invention provide integrated circuits and methods for activating reactions in integrated circuits. In one embodiment, an integrated circuit is provided having reactive material capable of being activated by electrical discharge, without requiring a battery or similar external power source, to produce an exothermic reaction that erases and/or destroys one or more semiconductor devices on the integrated circuit.