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公开(公告)号：US10553731B2
公开(公告)日：2020-02-04
申请号：US15585734
申请日：2017-05-03
IPC分类号： H01L31/0216 , H01L31/0693
摘要： A photovoltaic device that includes a p-n junction of first type III-V semiconductor material layers, and a window layer of a second type III-V semiconductor material on the light receiving end of the p-n junction, wherein the second type III-V semiconductor material has a greater band gap than the first type III-V semiconductor material, and the window layer of the photovoltaic device has a cross-sectional area of microscale.
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公开(公告)号：US10546926B2
公开(公告)日：2020-01-28
申请号：US16402267
申请日：2019-05-03
IPC分类号： H01L29/06 , H01L29/66 , H01L29/423 , H01L21/02 , H01L29/786 , H01L21/84 , H01L29/51 , H01L29/20 , H01L21/311
摘要： Embodiments of the present invention provide methods for fabricating a semiconductor device with selective oxidation. One method may include providing a semiconductor substrate including a stack of two semiconductor layers; depositing an insulating material on the semiconductor substrate; forming a set of fins; selectively oxidizing one of the semiconductor layers; forming a dummy gate structure and a set of spacers along the sides of the dummy gate structure; forming a source drain region adjacent to the dummy gate structure; removing the dummy gate structure; and releasing the selectively oxidized semiconductor layer.
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53.发明申请公开(公告)号：US20200027690A1
公开(公告)日：2020-01-23
申请号：US16039855
申请日：2018-07-19
IPC分类号： H01J37/147 , G01N23/207
摘要： Techniques for high throughput electron channeling contrast imaging (ECCI) by varying electron beam energy are provided. In one aspect, a method for ECCI of a crystalline wafer includes: placing the crystalline wafer under an electron microscope having an angle of less than 90° relative to a surface of the crystalline wafer; generating an electron beam, by the electron microscope, incident on the crystalline wafer; varying an accelerating voltage of the electron microscope to access a channeling condition of the crystalline wafer; and obtaining an image of the crystalline wafer. A system for ECCI is also provided.
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公开(公告)号：US10529891B2
公开(公告)日：2020-01-07
申请号：US15948577
申请日：2018-04-09
发明人： Jeehwan Kim , Ning Li , Devendra K. Sadana
IPC分类号： H01L33/10 , H01L31/0232 , H01L31/0304 , H01L31/0352 , H01L31/105 , H01L31/18 , H01L33/12 , H01L33/00 , H01L33/30
摘要： An optoelectronic device that includes a germanium containing buffer layer atop a silicon containing substrate, and a first distributed Bragg reflector stack of III-V semiconductor material layers on the buffer layer. The optoelectronic device further includes an active layer of III-V semiconductor material present on the first distributed Bragg reflector stack, wherein a difference in lattice dimension between the active layer and the first distributed brag reflector stack induces a strain in the active layer. A second distributed Bragg reflector stack of III-V semiconductor material layers having a may be present on the active layer.
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55.发明申请公开(公告)号：US20190341250A1
公开(公告)日：2019-11-07
申请号：US16516835
申请日：2019-07-19
发明人： Stephen W. Bedell , Cheng-Wei Cheng , Kunal Mukherjee , John A. Ott , Devendra K. Sadana , Brent A. Wacaser
IPC分类号： H01L21/02 , H01L21/306 , H01L21/3065 , H01L29/04
摘要： A method for reducing crystalline defects in a semiconductor structure is presented. The method includes epitaxially growing a first crystalline material over a crystalline substrate, epitaxially growing a second crystalline material over the first crystalline material, and patterning and removing portions of the second crystalline material to form openings. The method further includes converting the first crystalline material into a non-crystalline material, depositing a thermally stable material in the openings, depositing a capping layer over the second crystalline material and the thermally stable material to form a substantially enclosed semiconductor structure, and annealing the substantially enclosed semiconductor structure.
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公开(公告)号：US10454239B2
公开(公告)日：2019-10-22
申请号：US14838439
申请日：2015-08-28
摘要： After forming a monolithically integrated device including a laser and a modulator on a semiconductor substrate, an anti-reflection coating layer is formed over the monolithically integrated device and the semiconductor substrate by an atomic layer deposition (ALD) process. The anti-reflection coating layer is lithographically patterned so that an anti-reflection coating is only present on exposed surfaces of the modulator. After forming an etch stop layer portion to protect the anti-reflection coating, a high reflection coating layer is formed over the etch stop layer, the laser and the semiconductor structure by ALD and lithographically patterned to provide a high reflection coating that is formed solely on a non-output facet of the laser.
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公开(公告)号：US20190318193A1
公开(公告)日：2019-10-17
申请号：US16455141
申请日：2019-06-27
摘要： A method for crystal analysis includes identifying a crystalline region on a device where an electronic channeling pattern is needed to be determined, acquiring a whole image for each of a plurality of different positions for the crystalline region using a scanning electron microscope (SEM) as the crystalline region is moved to different positions. Relevant regions are extracted from the whole images. The images of the relevant regions are stitched together to form a composite map of a full electron channeling pattern representative of the crystalline region wherein the electronic channeling pattern is provided due to an increase in effective angular range between a SEM beam and a surface of the crystal region.
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公开(公告)号：US10403779B2
公开(公告)日：2019-09-03
申请号：US14717482
申请日：2015-05-20
IPC分类号： H01L31/077 , C23C16/50 , H01L31/20 , H01L21/02 , C23C16/02 , H01L31/0216 , H01L31/0368 , H01L31/0376 , H01L31/0392 , C23C16/455 , C23C16/515 , H01L31/0224 , H01L31/065 , H01L31/18 , H01L31/056
摘要： A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.
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公开(公告)号：US10388815B2
公开(公告)日：2019-08-20
申请号：US15966864
申请日：2018-04-30
IPC分类号： H01L31/18 , H01L31/056 , H01L31/068 , H01L31/0224 , H01L31/0747
摘要： A photovoltaic device and method include a crystalline substrate and an emitter contact portion formed in contact with the substrate. A back-surface-field junction includes a homogeneous junction layer formed in contact with the crystalline substrate and having a same conductivity type and a higher active doping density than that of the substrate. The homogeneous junction layer includes a thickness less than a diffusion length of minority carriers in the homogeneous junction layer. A passivation layer is formed in contact with the homogeneous junction layer opposite the substrate, which is either undoped or has the same conductivity type as that of the substrate.
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公开(公告)号：US20190237511A1
公开(公告)日：2019-08-01
申请号：US16377169
申请日：2019-04-06
IPC分类号： H01L27/28 , H01L29/66 , H01L51/05 , H01L27/12 , H01L29/778 , H01L27/32 , H01L51/10 , H01L29/43 , H01L29/40 , H05B33/08 , H05B37/02
摘要： Hybrid high electron mobility field-effect transistors including inorganic channels and organic gate barrier layers are used in some applications for forming high resolution active matrix displays. Arrays of such high electron mobility field-effect transistors are electrically connected to thin film switching transistors and provide high drive currents for passive devices such as organic light emitting diodes. The organic gate barrier layers are operative to suppress both electron and hole transport between the inorganic channel layer and the gate electrodes of the high electron mobility field-effect transistors.
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