摘要:
A nonvolatile memory device including a nano dot and a method of fabricating the same are provided. The nonvolatile memory device may include a lower electrode, an oxide layer on the lower electrode, a nano dot in the oxide layer and an upper electrode on the oxide layer. In example embodiments, the current paths inside the oxide layer may be unified, thereby stabilizing the reset current.
摘要:
Disclosed is a self-reciprocating energy recovery device utilized in driving of a seawater pump by self-reciprocating a piston of a power recovery chamber and recovering energy not using an electronic drive unit but using the hydraulic power of concentrated water. The self-reciprocating energy recovery device including a pair of power recovery chambers having pistons therein respectively, a high-pressure concentrated supply pipe, a low-pressure concentrated discharge pipe, and a high-pressure seawater discharge pipe to enable the power recovery chambers to recover hydraulic power supplied through the high-pressure concentrated water supply pipe and utilize the hydraulic power in driving of a seawater pump.
摘要:
An image display device includes a display surface through which input light is applied from an external object, a color filter having color pixels that are arranged to form a planar surface substantially parallel with the display surface, a substrate having light sensing portions each disposed to face corresponding one of the color pixels, in which the light sensing portion senses light provided through the corresponding color pixel, and a liquid crystal layer disposed between the color filter and the substrate. The substrate includes pixel portions arranged in a matrix form to display images. The light sensing portion includes switching transistors that are respectively controlled by the input light and a gate signal and respectively connected to sensing lines.
摘要:
A motor is disclosed. The motor can include a shaft, a bearing that rotatably supports the shaft, a rotor that is coupled to the shaft and to which at least one magnet is coupled, a stator having one side facing the magnet, a base supporting the bearing, and an attachment portion interposed between the base and one side of the stator. The spindle motor may be used to firmly secure the stator to the base, while minimizing the transfer of vibrations from the stator to the base to improve the noise and vibration properties of the spindle motor.
摘要:
An image display system includes a light pen to generate light to input data, and a display panel to display images in response to the light provided from the light pen. The display panel includes a first substrate on which pixel electrodes are formed, a second substrate on which a common electrode are formed, and a photo-sensor formed on the first substrate. The photo-sensor detects the light provided from the light pen to generate a light detect signal. The image display system also includes a driving module to provide new image data to the display panel to display new images in response to the light detect signal from the photo-sensor.
摘要:
Nonvolatile memory devices and methods of manufacturing the same are provided. The nonvolatile memory devices may include an oxide layer formed of a resistance conversion material, a lower electrode, a nano-wire layer formed of a transition metal on the lower electrode, and an upper electrode formed on the oxide layer. According to example embodiments, a reset current may be stabilized by unifying a current path on the oxide layer.
摘要:
A semiconductor memory device may include a semiconductor substrate, a control gate electrode recessed in the semiconductor substrate, a storage node layer between the control gate electrode and the semiconductor substrate, a tunneling insulating layer between the storage node layer and the semiconductor substrate, a blocking insulating layer between the storage node layer and the control gate electrode, and first and second channel regions surrounding the control gate electrode and separated by a pair of opposing separating insulating layers. A method of operating the semiconductor memory device may include programming data in the storage node layer by charge tunneling through the blocking insulating layer, thus achieving relatively high reliability and efficiency.
摘要:
A charge trap memory device may include a tunnel insulating layer formed on a substrate. A charge trap layer may be formed on the tunnel insulating layer, wherein the charge trap layer is a higher-k dielectric insulating layer doped with one or more transition metals. The tunneling insulating layer may be relatively non-reactive with respect to metals in the charge trap layer. The tunneling insulating layer may also reduce or prevent metals in the charge trap layer from diffusing into the substrate.
摘要:
The present invention relates to a pre-processing apparatus using nonuniform quantization of a channel reliability value and a low density parity check (LDPC) decoding system. The pre-processing apparatus can present degradation in performance and be embodied simply by performing decoding pre-process by estimating a discrete channel reliability value (Lc*) through nonuniform quantization of a channel reliability value based on a relations between a bit error rate (BER) estimated through a simulation performed in advance and a standard deviation (σ) of channel noise within a predetermined range of noise estimation error and p, and bit-shifting a receiving signal as much as a discrete channel reliability value. The pre-processing apparatus includes: a channel reliability measuring unit, a nonuniform quantizing unit, a sign bit adding unit, a bit shifting unit.
摘要翻译:本发明涉及使用信道可靠性值和低密度奇偶校验(LDPC)解码系统的非均匀量化的预处理装置。 预处理装置可以呈现性能下降,并且通过基于信道可靠性值的非均匀量化来估计离散信道可靠性值(L> c * *)来执行解码预处理 通过预先执行的模拟估计的误码率(BER)与噪声估计误差和p的预定范围内的信道噪声的标准偏差(sigma)之间的关系,以及将接收信号与离散信道 可靠性值。 预处理装置包括:信道可靠性测量单元,不均匀量化单元,符号位加法单元,位移单元。
摘要:
Example embodiments may provide memory devices having a charge trap layer which includes a hole trap and an electron trap. The memory device may generate a relatively large flat band voltage gap according to an applied bias voltage. Accordingly, a stable multilevel cell may be realized.