公开(公告)号：US07018920B2

公开(公告)日：2006-03-28

申请号：US10985510

申请日：2004-11-10

申请人： Robert P. Meagley ,  Michael D. Goodner

发明人： Robert P. Meagley ,  Michael D. Goodner

IPC分类号： H01L21/4763

CPC分类号： H01L21/76808

摘要： A composite sacrificial material is deposited in a void or opening in a dielectric layer on a semiconductor substrate. The composite sacrificial material includes a polymeric or oligomeric matrix with filler material mixed therein. The filler material may be particulate matter that may be used to modify one or more properties of the composite sacrificial material during semiconductor processing.

摘要翻译： 复合牺牲材料沉积在半导体衬底上的电介质层的空隙或开口中。 复合牺牲材料包括其中混合有填料的聚合物或低聚物基质。 填充材料可以是可以用于在半导体加工期间修饰复合牺牲材料的一种或多种性质的颗粒物质。

公开(公告)号：US06991893B2

公开(公告)日：2006-01-31

申请号：US10284662

申请日：2002-10-31

申请人： Michael D. Goodner ,  Robert P. Meagley ,  Michael J. Leeson

发明人： Michael D. Goodner ,  Robert P. Meagley ,  Michael J. Leeson

IPC分类号： G03F7/00

CPC分类号： G03F7/11 ,  G03F7/09 ,  G03F7/091 ,  G03F7/095

摘要： Photoresists may be formed over a structure that has been modified so as to poison a lower layer of the photoresist. Then, when the photoresist is patterned, it is only patterned down to the poisoned layer. The poisoned layer may be removed subsequently. However, because of the use of the modification process, the critical dimensions of the photoresist may be improved in some embodiments.

摘要翻译： 光致抗蚀剂可以形成在经过改性以便使较低层光致抗蚀剂中毒的结构上。 然后，当光致抗蚀剂被图案化时，其仅被图案化到中毒层。 中毒层可能随后被去除。 然而，由于使用了改性方法，在一些实施方案中可以改善光致抗蚀剂的临界尺寸。

公开(公告)号：US06924222B2

公开(公告)日：2005-08-02

申请号：US10301976

申请日：2002-11-21

申请人： Michael D. Goodner ,  Jihperng Leu

发明人： Michael D. Goodner ,  Jihperng Leu

IPC分类号： H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/4763

CPC分类号： H01L21/02126 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/0234 ,  H01L21/02343 ,  H01L21/02362 ,  H01L21/31133 ,  H01L21/312 ,  H01L21/3124 ,  H01L21/3127 ,  H01L21/31695 ,  H01L21/7682 ,  H01L21/76834 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer comprising a porous matrix, as well as a porogen in certain variations, is formed adjacent a sacrificial dielectric layer. Subsequent to other processing treatments, a portion of the sacrificial dielectric layer is decomposed and removed through a portion of the porous matrix using supercritical carbon dioxide leaving voids in positions previously occupied by portions of the sacrificial dielectric layer. The resultant structure has a desirably low k value as a result of the voids and materials comprising the porous matrix and other structures. The composite dielectric layer may be used in concert with other dielectric layers of varying porosity, dimensions, and material properties to provide varied mechanical and electrical performance profiles.

公开(公告)号：US06867473B2

公开(公告)日：2005-03-15

申请号：US10722800

申请日：2003-11-26

申请人： Michael D. Goodner ,  Grant Kloster ,  Steven W. Johnston

发明人： Michael D. Goodner ,  Grant Kloster ,  Steven W. Johnston

IPC分类号： H01L21/288 ,  H01L21/312 ,  H01L21/3205 ,  H01L21/768 ,  H01L29/00

CPC分类号： H01L21/312 ,  C23C18/1607 ,  C23C18/1639 ,  C23C18/1641 ,  C23C18/1653 ,  C23C18/1868 ,  C23C18/1893 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/76843 ,  H01L21/76874 ,  H01L23/53238

摘要： A surface may be selectively coated with a polymer using an induced surface grafting or polymerization reaction. The reaction proceeds in those regions that are polymerizable and not in other regions. Thus, a semiconductor structure having organic regions and metal regions exposed, for example, may have the organic polymers formed selectively on the organic regions and not on the unpolymerizable or metal regions.

摘要翻译： 使用诱导的表面接枝或聚合反应可以用聚合物选择性地涂布表面。 反应在可聚合的区域中进行，而不在其它区域。 因此，具有例如露出的有机区域和金属区域的半导体结构可以具有在有机区域而不是在不可聚合或金属区域上有选择地形成的有机聚合物。