公开(公告)号：US08279905B2

公开(公告)日：2012-10-02

申请号：US13438028

申请日：2012-04-03

Applicant: Kazuhisa Takagi

Inventor： Kazuhisa Takagi

IPC: H01S5/00

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/1053 ,  H01S5/1057 ,  H01S5/124 ,  H01S5/2222 ,  H01S5/227 ,  H01S5/3412 ,  H01S5/509

Abstract: A method of manufacturing a semiconductor optical element having an active layer containing quantum dots, in which density of the quantum dots in a resonator direction in a portion of the active layer in which density of photons is high, relative to the density of the quantum dots in a portion of the active layer in which the density of photons is relatively low, includes forming the quantum dots in the active layer so that the distribution density is uniform in a resonator direction; and diffusing or implanting an impurity non-uniformly in the resonator direction in the active layer in which quantum dots are uniformly distributed, thereby disordering some of the quantum dots and forming a non-uniform density distribution of the quantum dots in the resonator direction in the active layer.

Abstract translation: 一种制造半导体光学元件的方法，该半导体光学元件具有含有量子点的有源层，其中相对于量子点的密度，在有源层的光子密度高的部分中的谐振器方向上的量子点的密度 在其中光子密度相对较低的有源层的一部分中，包括在有源层中形成量子点，使得分布密度在谐振器方向上是均匀的; 并且在均匀分布量子点的有源层中在谐振器方向上不均匀地扩散或注入杂质，从而使一些量子点失调并且在谐振器方向上形成量子点在谐振器方向上的非均匀密度分布 活动层

公开(公告)号：US08179942B2

公开(公告)日：2012-05-15

申请号：US13279460

申请日：2011-10-24

Applicant: Kazuhisa Takagi

Inventor： Kazuhisa Takagi

IPC: H01S5/00

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/1053 ,  H01S5/1057 ,  H01S5/124 ,  H01S5/2222 ,  H01S5/227 ,  H01S5/3412 ,  H01S5/509

Abstract: A semiconductor optical element has an active layer including quantum dots. The density of quantum dots in the resonator direction in a portion of the active layer in which the density of photons is relatively high is increased relative to the density of quantum dots in a portion of the active layer in which the density of photons is relatively low.

Abstract translation: 半导体光学元件具有包括量子点的有源层。 光子密度相对较高的有源层部分中的谐振器方向的量子点的密度相对于有源层的一部分中的光子的密度相对较低的部分的量子点的密度而增加 。

公开(公告)号：US20110305255A1

公开(公告)日：2011-12-15

申请号：US13020028

申请日：2011-02-03

Applicant: Eitaro Ishimura ,  Kazuhisa Takagi ,  Keisuke Matsumoto ,  Takeshi Saito

Inventor： Eitaro Ishimura ,  Kazuhisa Takagi ,  Keisuke Matsumoto ,  Takeshi Saito

IPC: H01S5/026 ,  H01L33/00

CPC classification number: H01S5/0265 ,  B82Y20/00 ,  G02B6/122 ,  G02B2006/12097 ,  G02F1/2257 ,  H01S5/02461 ,  H01S5/026 ,  H01S5/1014 ,  H01S5/12 ,  H01S5/222 ,  H01S5/2224 ,  H01S5/227 ,  H01S5/34306

Abstract: A semiconductor optical integrated element includes: a substrate; and a laser diode and a modulator which are integrated on the substrate. The laser diode includes an embedded waveguide having a core layer, both sides of which are embedded in a semiconductor material. The modulator includes a high-mesa ridge waveguide having a core layer, neither side of which is embedded in the semiconductor material. The core layers in the laser diode and the modulator are stripe-shaped.

Abstract translation: 半导体光学集成元件包括：基板; 以及集成在基板上的激光二极管和调制器。 激光二极管包括具有芯层的嵌入式波导，其两侧嵌入半导体材料中。 调制器包括具有核心层的高台面脊波导，其两侧都不嵌入半导体材料中。 激光二极管和调制器中的核心层是条形的。

公开(公告)号：US20100260225A1

公开(公告)日：2010-10-14

申请号：US12823172

申请日：2010-06-25

Applicant: Kazuhisa Takagi

Inventor： Kazuhisa Takagi

IPC: H01S5/026

CPC classification number: H01S5/12 ,  H01S5/1064 ,  H01S5/1225 ,  H01S5/124 ,  H01S5/20 ,  H01S5/22

Abstract: A semiconductor laser comprises: a substrate; an n-cladding layer disposed on the substrate; an active layer disposed on the n-cladding layer; a p-cladding layer disposed on the active layer and forming a waveguide ridge; and a diffraction grating layer disposed between the active layer and the n-cladding layer or the p-cladding layer and including a phase shift structure in a part of the diffraction grating layer in an optical waveguide direction. The width of the p-cladding layer is increased in a portion corresponding to the phase shift structure of the diffraction grating layer.

Abstract translation: 半导体激光器包括：基板; 设置在所述基板上的n包层; 设置在n包层上的有源层; p层，设置在有源层上并形成波导脊; 以及设置在有源层和n包层或p包层之间的衍射光栅层，并且在衍射光栅层的一部分中在光波导方向上包括相移结构。 p型覆层的宽度在与衍射光栅层的相移结构对应的部分增加。

公开(公告)号：US20090277581A1

公开(公告)日：2009-11-12

申请号：US12149673

申请日：2008-05-06

Applicant: Kunio Mori ,  Kazuhisa Takagi

Inventor： Kunio Mori ,  Kazuhisa Takagi

IPC: C09J183/06 ,  C08L83/06 ,  C09J5/00

CPC classification number: C09J7/35 ,  C09J2483/00 ,  Y10T428/2848 ,  Y10T428/2852

Abstract: A base material for adhesion to be adhered to a solid body comprising; a substrate made from metal, polymer resin, glass or ceramics whose surface is adhesive to the solid body by silyl-ether-linkage that at least one active silyl group selected from the group consisting of a hydrosilyl-containing silyl group, a vinyl-containing silyl group, an alkoxysilyl-containing silyl group and a hydrolytic group-containing silyl group having reactivity with a reactive group on the surface of the solid body is bound to a dehydrogenated residue of hydroxyl group on the surface of the substrate.

Abstract translation: 一种用于附着到固体上的基底材料，包括： 由金属，聚合物树脂，玻璃或陶瓷制成的基材，其表面通过甲硅烷基醚键与固体粘合，至少一种活性甲硅烷基选自含氢化甲硅烷基的甲硅烷基，含乙烯基的 甲硅烷基，含烷氧基甲硅烷基的甲硅烷基和在固体表面具有与反应性基团具有反应性的含水解基的甲硅烷基结合到基材表面上的脱氢的羟基残基。

公开(公告)号：US20080084906A1

公开(公告)日：2008-04-10

申请号：US11626507

申请日：2007-01-24

Applicant: Kazuhisa Takagi

Inventor： Kazuhisa Takagi

IPC: H01S5/00

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/1053 ,  H01S5/1057 ,  H01S5/124 ,  H01S5/2222 ,  H01S5/227 ,  H01S5/3412 ,  H01S5/509

Abstract: A semiconductor optical element has an active layer including quantum dots. The density of quantum dots in the resonator direction in a portion of the active layer in which the density of photons is relatively high is increased relative to the density of quantum dots in a portion of the active layer in which the density of photons is relatively low.

Abstract translation: 半导体光学元件具有包括量子点的有源层。 光子密度相对较高的有源层部分中的谐振器方向的量子点的密度相对于有源层的一部分中的光子的密度相对较低的部分的量子点的密度而增加 。

公开(公告)号：US07218658B2

公开(公告)日：2007-05-15

申请号：US10918358

申请日：2004-08-16

Applicant: Kazuhisa Takagi

Inventor： Kazuhisa Takagi

IPC: H01S5/00 ,  H01S5/20

CPC classification number: B82Y20/00 ,  H01S5/12 ,  H01S5/2206 ,  H01S5/2214 ,  H01S5/2222 ,  H01S5/2231 ,  H01S5/227 ,  H01S5/305 ,  H01S5/321 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/34313 ,  H01S5/34353 ,  H01S5/34366 ,  H01S5/34373

Abstract: A semiconductor laser device according to the present invention comprises an optical waveguide laminated structure having: a first first-cladding layer made up of a p-InP layer; a double heterojunction layer of p-AlGaInAs; a second first-cladding layer made up of a p-InP layer; a first light confining layer of p-InGaAsP; an active layer of InGaAsP having a quantum well structure; a second light confining layer of n-InGaAsP; and a second-cladding layer made up of an n-InP layer, and heterojunctions of the second kind are formed at the interfaces between the first first-cladding layer and the double heterojunction layer and between the double heterojunction layer and the second first-cladding layer.

Abstract translation: 根据本发明的半导体激光器件包括：光波导层叠结构，具有：由p-InP层构成的第一第一包层; p-AlGaInAs的双异质结层; 由p-InP层构成的第二第一包层; p-InGaAsP的第一光限制层; 具有量子阱结构的InGaAsP的有源层; n-InGaAsP的第二光限制层; 以及由n-InP层构成的第二包覆层，并且在第一第一包层和双异质结层之间的界面处以及在双异质结层和第二第一包层之间的界面处形成第二类型的异质结 层。

公开(公告)号：US07177337B2

公开(公告)日：2007-02-13

申请号：US10739068

申请日：2003-12-19

Applicant: Kazuhisa Takagi

Inventor： Kazuhisa Takagi

IPC: H01S3/03

CPC classification number: H01S5/026 ,  G02B6/12007 ,  G02B6/122 ,  G02B2006/12126 ,  G02B2006/1215 ,  H01S5/1003 ,  H01S5/101 ,  H01S5/2022 ,  H01S5/227 ,  H01S5/32391 ,  H01S5/50

Abstract: A semiconductor optical integrated circuit includes: a semiconductor substrate; a light reflecting portion and a gain region, on the semiconductor substrate; a first optical waveguide connecting the reflecting portion and the gain region; and a second optical waveguide in conjunction with the first optical waveguide and having a larger optical absorptance than the first optical waveguide.

Abstract translation: 半导体光集成电路包括：半导体衬底; 半导体衬底上的光反射部分和增益区域; 连接所述反射部和所述增益区的第一光波导; 以及与第一光波导相结合并且具有比第一光波导更大的光吸收率的第二光波导。

公开(公告)号：US20060291038A1

公开(公告)日：2006-12-28

申请号：US11389315

申请日：2006-03-27

Applicant: Keisuke Matsumoto ,  Toshitaka Aoyagi ,  Kazuhisa Takagi

Inventor： Keisuke Matsumoto ,  Toshitaka Aoyagi ,  Kazuhisa Takagi

IPC: H01S3/00

CPC classification number: G02F2/004 ,  G02F2001/212 ,  G02F2203/70

Abstract: An optical wavelength converter includes: a first branch passage and a second branch passage receiving direct current light, one of the first branch passage and the second branch passage receiving input signal light; wavelength converting semiconductor optical amplifiers inserted into the first branch passage and the second branch passage, respectively; and a signal amplifying semiconductor optical amplifier for amplifying the input signal light, which is coupled with a port through which the input signal light is input to one of the first branch passage and the second branch passage. In the optical wavelength converter, differential gain of the signal amplifying semiconductor optical amplifier at a wavelength of the input signal light is less than differential gain of the wavelength converting semiconductor optical amplifier at the wavelength of the direct current light.

Abstract translation: 光波长转换器包括：第一分支通道和第二分支通道，其接收直流光，第一分支通道和第二分支通道中的一个接收输入信号光; 分别插入到第一分支通道和第二分支通道中的波长转换半导体光放大器; 以及用于放大输入信号光的信号放大半导体光放大器，其与输入信号光输入到第一分支通道和第二分支通道之一的端口耦合。 在光波长转换器中，在输入信号光的波长处的信号放大半导体光放大器的差分增益小于直流光波长处的波长转换半导体光放大器的差分增益。

公开(公告)号：US06993213B2

公开(公告)日：2006-01-31

申请号：US10713023

申请日：2003-11-17

Applicant: Kazuhisa Takagi

Inventor： Kazuhisa Takagi

IPC: G02B6/12

CPC classification number: G02B6/2813 ,  G02B6/125 ,  G02B6/132 ,  G02B2006/12097

Abstract: Substantially S-shaped optical waveguides are embedded in a semiconductor substrate, and at least two optical waveguide returning parts are interposed between the input and output ends of the waveguides. Each of the optical waveguide returning parts includes a multiplexing portion. A reflecting part is located on a rear end side of the multiplexing portion of each optical waveguide returning part. Thus, the length between input and output ends of the waveguides can be reduced, suppressing bending loss, and achieving a high speed and small size integrated optical device.

Abstract translation: 基本上S形的光波导嵌入在半导体衬底中，并且至少两个光波导返回部分插在波导的输入和输出端之间。 每个光波导返回部分包括复用部分。 反射部分位于每个光波导返回部分的多路复用部分的后端侧。 因此，可以减小波导的输入端和输出端之间的长度，抑制弯曲损耗，并实现高速和小尺寸的集成光学器件。