公开(公告)号：US20100173480A1

公开(公告)日：2010-07-08

申请号：US12494416

申请日：2009-06-30

申请人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Masaaki Hiroki

发明人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Masaaki Hiroki

IPC分类号： H01L21/268 ,  H01L21/20

CPC分类号： H01L21/02691 ,  B23K26/0838 ,  C21D1/34 ,  H01L21/02686 ,  H01L21/2026

摘要： This invention is intended to provide a laser annealing method by employing a laser annealer lower in running cost so as to deal with a large-sized substrate, for preventing or decreasing the generation of a concentric pattern and to provide a semiconductor device manufacturing method including a step using the laser annealing method. While moving a substrate at a constant rate between 20 and 200 cm/s, a laser beam is radiated aslant to a semiconductor film on a surface of the semiconductor substrate. Therefore, it is possible to radiate a uniform laser beam to even a semiconductor film on a large-sized substrate and to thereby manufacture a semiconductor device for which the generation of a concentric pattern is prevented or decreased. By condensing a plurality of laser beams into one flux, it is possible to prevent or decrease the generation of a concentric pattern and to thereby improve the reliability of the semiconductor device.

摘要翻译： 本发明旨在提供一种激光退火方法，其采用运行成本较低的激光退火机，以处理大尺寸基板，以防止或减少同心图案的产生，并提供一种半导体器件制造方法，包括 使用激光退火方法。 当以20-200cm / s之间的恒定速率移动衬底时，激光束被倾斜地辐射到半导体衬底的表面上的半导体膜。 因此，能够将均匀的激光束照射到大尺寸基板上的半导体膜上，从而制造防止或减少同心图案的产生的半导体器件。 通过将多个激光束聚光成一个通量，可以防止或减少同心图案的产生，从而提高半导体器件的可靠性。

公开(公告)号：US07736964B2

公开(公告)日：2010-06-15

申请号：US11274904

申请日：2005-11-16

申请人： Yoshiaki Yamamoto ,  Koichiro Tanaka ,  Atsuo Isobe ,  Daisuke Ohgarane ,  Shunpei Yamazaki

发明人： Yoshiaki Yamamoto ,  Koichiro Tanaka ,  Atsuo Isobe ,  Daisuke Ohgarane ,  Shunpei Yamazaki

IPC分类号： H01L21/336

CPC分类号： H01L21/6835 ,  H01L21/02532 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/84 ,  H01L23/544 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L27/12 ,  H01L29/78603 ,  H01L29/78648 ,  H01L2221/6835 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/6677 ,  H01L2224/16 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/838 ,  H01L2224/85 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/0106 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01Q1/38 ,  H01Q9/285 ,  H01Q23/00 ,  Y10S438/982 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light.

摘要翻译： 本发明的目的是提供一种通过与专利文献1中公开的方法不同的方法从衬底分离薄膜晶体管和包括薄膜晶体管的电路或半导体器件的方法，并且将薄膜 晶体管，以及电路或半导体器件到具有柔性的衬底。 根据本发明，在绝缘膜上形成大的开口或多个开口，在开口处形成连接到薄膜晶体管的导电膜，并且去除剥离层，然后，将具有薄的 薄膜晶体管转置到具有导电膜等的基板上。 根据本发明的薄膜晶体管具有通过激光照射而结晶的半导体膜，并且防止剥离层在不被激光照射的激光照射下曝光。

公开(公告)号：US07736936B2

公开(公告)日：2010-06-15

申请号：US11889546

申请日：2007-08-14

申请人： Koichiro Tanaka

发明人： Koichiro Tanaka

IPC分类号： H01L21/4763

CPC分类号： H01L27/1288 ,  H01L27/1214

摘要： To improve the use efficiency of materials and provide a technique of fabricating a display device by a simple process. The method includes the steps of providing a mask on a conductive layer, forming an insulating film over the conductive layer provided with the mask, removing the mask to form an insulating layer having an opening; and forming a conductive film in the opening so as to be in contact with the exposed conductive layer, whereby the conductive layer and the conductive film can be electrically connected through the insulating layer. The shape of the opening reflects the shape of the mask. A mask having a columnar shape (e.g., a prism, a cylinder, or a triangular prism), a needle shape, or the like can be used.

摘要翻译： 提高材料的使用效率，提供通过简单的工艺制造显示装置的技术。 该方法包括以下步骤：在导电层上提供掩模，在设置有掩模的导电层上形成绝缘膜，去除掩模以形成具有开口的绝缘层; 并且在所述开口中形成导电膜以与所述暴露的导电层接触，由此所述导电层和所述导电膜可以通过所述绝缘层电连接。 开口的形状反映了掩模的形状。 可以使用具有柱状形状的面罩（例如，棱镜，圆筒，或三角棱镜），针形等。

公开(公告)号：US07727847B2

公开(公告)日：2010-06-01

申请号：US11840043

申请日：2007-08-16

申请人： Koichiro Tanaka ,  Yasuyuki Arai

发明人： Koichiro Tanaka ,  Yasuyuki Arai

IPC分类号： H01L21/311 ,  H01L23/482

CPC分类号： H01L27/124 ,  H01L21/76802 ,  H01L27/1288 ,  H01L27/3276 ,  H01L51/5284 ,  H01L2924/0002 ,  H05B33/10 ,  H01L2924/00

摘要： A light-absorbing layer is selectively formed over an insulating surface, an insulating layer is formed over the insulating surface and the light-absorbing layer, the insulating surface, the light-absorbing layer, and the insulating layer are irradiated with laser light to selectively remove only the insulating layer above the light-absorbing layer in an irradiated region of the insulating layer so that an opening reaching the light-absorbing layer is formed in the insulating layer, and a conductive film is formed in the opening so as to be in contact with the light-absorbing layer. By forming the conductive film in the opening so as to be in contact with the exposed light-absorbing layer, the conductive film can be electrically connected to the light-absorbing layer with the insulating layer interposed therebetween.

摘要翻译： 在绝缘表面上选择性地形成光吸收层，在绝缘表面上形成绝缘层，并且用激光照射光吸收层，绝缘表面，光吸收层和绝缘层以选择性地 在绝缘层的照射区域中仅去除光吸收层上方的绝缘层，使得在绝缘层中形成到达光吸收层的开口，并且在开口中形成导电膜以便处于 与光吸收层接触。 通过在开口中形成导电膜以与露出的光吸收层接触，导电膜可以与介于其间的绝缘层与光吸收层电连接。

公开(公告)号：US07706078B2

公开(公告)日：2010-04-27

申请号：US11896821

申请日：2007-09-06

申请人： Koichiro Tanaka

发明人： Koichiro Tanaka

IPC分类号： G02B15/14 ,  H01S3/08

CPC分类号： G02B27/0955 ,  G02B27/0927 ,  G02B27/0944

摘要： An object is to provide a laser light irradiation apparatus and a laser light irradiation method which reduce errors of an irradiation position of laser light to an irradiated object and allow irradiation with laser light of any size when the irradiated object is irradiated with the laser light through a beam expander optical system. One feature of a laser light irradiation apparatus of the present invention is to include a laser oscillator; a beam expander optical system having a zoom function; and a correction lens disposed to conjugate the laser oscillator and the beam expander optical system including at least a first lens, a second lens, and a third lens in order in a traveling direction of the laser light, wherein the second lens and the third lens are cooperated with each other in accordance with the magnification of the laser light.

摘要翻译： 本发明的目的是提供一种激光照射装置和激光照射方法，其能够减少激光的照射位置对被照射物体的误差，并且在照射物体被激光照射时能够照射任何尺寸的激光 光束扩展器光学系统。 本发明的激光照射装置的一个特征是包括激光振荡器; 具有缩放功能的光束扩展器光学系统; 以及校正透镜，被设置为使激光振荡器和扩束器光学系统在激光的行进方向上依次包括至少第一透镜，第二透镜和第三透镜，其中第二透镜和第三透镜 根据激光的放大倍数进行配合。

公开(公告)号：US07702027B2

公开(公告)日：2010-04-20

申请号：US10573044

申请日：2005-03-09

申请人： Naganori Shirakata ,  Yasuo Harada ,  Koichiro Tanaka ,  Tomohiro Kimura ,  Shuya Hosokawa ,  Yoshio Urabe

发明人： Naganori Shirakata ,  Yasuo Harada ,  Koichiro Tanaka ,  Tomohiro Kimura ,  Shuya Hosokawa ,  Yoshio Urabe

IPC分类号： H04B7/02

CPC分类号： H04L27/2657 ,  H04L25/0204 ,  H04L27/2613 ,  H04L27/2675

摘要： In a transfer apparatus to which MIMO-OFDM is applied, a data transmission method and a data reception method are provided in which, even when there are frequency errors varying among transfer paths, the precision of estimation of an inverse propagation coefficient function can be improved, thereby making it possible to suppress a degradation in characteristics. Among symbols composed of a plurality of subcarriers orthognal to each other, the transfer apparatus uses, as a synchronization symbol, a symbol in which predetermined amplitudes and phases are assigned to a plurality of subcarriers spaced at predetermined frequency intervals. The synchronization symbol is divided into transmission antennas to generate a plurality of synchronization subsymbols, which are in turn simultaneously transmitted from a plurality of transmission antennas. A reception apparatus estimates a frequency error for each transfer path based on synchronization subsymbols included in signals received by a plurality of reception antennas, and based on the estimated frequency errors, corrects the received signals.

摘要翻译： 在应用MIMO-OFDM的传送装置中，提供数据传输方法和数据接收方法，其中即使在传输路径之间存在频率误差变化的情况下，也可以提高反向传播系数函数的估计精度 ，从而可以抑制特性的劣化。 在由彼此正交的多个子载波组成的符号之中，传送装置使用将预定的幅度和相位分配给以预定频率间隔隔开的多个子载波的符号作为同步符号。 同步符号被分成发送天线以产生多个同步子符号，这些同步子符号又从多个发送天线同时发送。 接收装置基于由多个接收天线接收的信号中包含的同步子符号估计每个传送路径的频率误差，并且基于估计的频率误差来校正接收到的信号。

公开(公告)号：US07682949B2

公开(公告)日：2010-03-23

申请号：US11525956

申请日：2006-09-25

申请人： Koichiro Tanaka ,  Tomoaki Moriwaka

发明人： Koichiro Tanaka ,  Tomoaki Moriwaka

IPC分类号： H01L21/20

CPC分类号： H01L21/02683 ,  B23K26/0648 ,  B23K26/0738 ,  B23K26/082 ,  G02F1/1303 ,  G02F1/1368 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285 ,  H01L29/4908 ,  H01L29/66757

摘要： A semiconductor film formed on a substrate is crystallized by continuously oscillating type laser. The scanning direction of the continuously oscillating type laser and the crystallization direction are coincident with each other. Adjustment of the crystallization direction and the charge transferring direction of the thin film transistors makes control of the characteristics of the thin film transistors possible. With respect to the laser treatment device for crystallizing the semiconductor film, the beam shape of laser oscillated from the continuously oscillating type laser device is made to be elliptical by a cylindrical lens and said cylindrical lens is made rotatable and said laser beam is scanned on said substrate by a galvanomirror and said laser beam can be focused upon said substrate by f-θlens.

摘要翻译： 形成在基板上的半导体膜通过连续振荡型激光结晶。 连续振荡型激光的扫描方向与结晶方向一致。 调整薄膜晶体管的结晶方向和电荷转移方向使得可以控制薄膜晶体管的特性。 对于用于使半导体膜结晶的激光治疗装置，由连续摆动式激光装置振荡的激光束的波束形状通过柱面透镜被制成椭圆形，并且所述柱面透镜可旋转，并且所述激光束在所述 基板通过电镜镜和所述激光束可以通过f-和透镜而聚焦在所述基板上。

公开(公告)号：US07638377B2

公开(公告)日：2009-12-29

申请号：US11710658

申请日：2007-02-23

申请人： Koichiro Tanaka ,  Hideto Ohnuma ,  Chiho Kokubo

发明人： Koichiro Tanaka ,  Hideto Ohnuma ,  Chiho Kokubo

IPC分类号： H01L21/84

CPC分类号： H01L21/02422 ,  G02F1/13454 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78645 ,  Y10S438/907

摘要： In a crystallization process of an amorphous semiconductor film, a first polycrystalline semiconductor film, in which amorphous regions are dotted within the continuous crystal region, is obtained by performing heat treatment after introducing a metallic element which promotes crystallization on the amorphous semiconductor film. At this point, the amorphous regions are kept within a predetermined range. A laser beam having a wave length region, which can give more energy to the amorphous region than to the crystal region, is irradiated to the first polycrystalline semiconductor film, it is possible to crystallize the amorphous region without destroying the crystal region. If a TFT is manufactured based on a second polycrystalline semiconductor film, which is obtained through the above-mentioned crystallization processes, the TFT with high electric characteristics and less fluctuation can be obtained.

摘要翻译： 在非晶半导体膜的结晶化处理中，通过在导致在非晶半导体膜上促进结晶的金属元素引入后进行热处理，得到非晶区域在连续晶体区域内点缀的第一多晶半导体膜。 此时，非晶区域保持在预定范围内。 具有能够向非晶区域提供比晶体区域更多能量的波长区域的激光束被照射到第一多晶半导体膜，可以使非晶区域结晶而不破坏晶体区域。 如果通过上述结晶工艺获得的基于第二多晶半导体膜制造TFT，则可以获得具有高电特性和较小波动的TFT。

公开(公告)号：US07618882B2

公开(公告)日：2009-11-17

申请号：US11412075

申请日：2006-04-27

申请人： Koichiro Tanaka ,  Hirotada Oishi

发明人： Koichiro Tanaka ,  Hirotada Oishi

IPC分类号： H01L21/268 ,  B23K26/06

CPC分类号： H01L21/02686 ,  B23K26/0006 ,  B23K26/0608 ,  B23K26/0624 ,  B23K26/067 ,  B23K26/0738 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/02678 ,  H01L21/2026 ,  H01L27/1266 ,  H01L27/1285 ,  H01L27/3244

摘要： It is an object to achieve continuous crystal growth without optical interference using a compact laser irradiation apparatus. A megahertz laser beam is split and combined to crystallize a semiconductor film. At this point of time, an optical path difference is provided between the split beams to reduce optical interference. The optical path difference is set to have a length equivalent to the pulse width of the megahertz laser beam or more and less than a length equivalent to the pulse repetition interval; thus, optical interference can be suppressed with a very short optical path difference. Therefore, laser beams can be applied continuously and efficiently without energy deterioration.

摘要翻译： 本发明的目的是使用紧凑型激光照射装置来实现无光学干涉的连续晶体生长。 将一兆赫兹的激光束分离并组合以使半导体膜结晶。 在这个时间点上，在分束之间提供光路差以减少光学干涉。 光程差被设定为具有与兆赫兹激光束的脉冲宽度相等的长度，或多于等于脉冲重复间隔的长度; 因此，能够以非常短的光程差来抑制光学干涉。 因此，可以连续有效地施加激光束而不会使能量劣化。

公开(公告)号：US07582162B2

公开(公告)日：2009-09-01

申请号：US11600833

申请日：2006-11-17

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

IPC分类号： C30B11/00 ,  C30B15/26 ,  H01L21/335

CPC分类号： H01L27/1222 ,  B23K26/0738 ,  H01L21/02354 ,  H01L21/02356 ,  H01L21/02675 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/32139 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696 ,  Y10S118/90 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

摘要翻译： 提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流 。 在绝缘膜上形成矩形或条纹图案凹陷和突出部分。 在绝缘膜上形成半导体膜。 通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。 尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。