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51.发明授权公开(公告)号：US08816353B2
公开(公告)日：2014-08-26
申请号：US13138034
申请日：2009-11-02
CPC分类号： H01L33/22
摘要： In at least one embodiment of the optoelectronic semiconductor chip (1), the latter comprises a semiconductor layer sequence (2) comprising at least one active layer (3) designed for generating an electromagnetic radiation. Furthermore, the optoelectronic semiconductor chip (1) has coupling-out structures (4), which are fitted at least indirectly on a radiation passage area (20) of the semiconductor layer sequence (2). In this case, a material of the coupling-out structures (4) is different than a material of the semiconductor layer sequence (2). The refractive indices of the materials of the coupling-out structures (4) and of the semiconductor layer sequence (2) deviate from one another by at most 30%. Furthermore, facets (40) of the coupling-out structures (4) have a total area amounting to at least 30% of an area content of the radiation passage area (20).
摘要翻译： 在光电半导体芯片（1）的至少一个实施例中，后者包括半导体层序列（2），其包括设计用于产生电磁辐射的至少一个有源层（3）。 此外，光电子半导体芯片（1）具有耦合输出结构（4），其至少间接地配合在半导体层序列（2）的辐射通道区域（20）上。 在这种情况下，耦合结构（4）的材料与半导体层序列（2）的材料不同。 耦合出结构（4）和半导体层序列（2）的材料的折射率彼此相差至多30％。 此外，耦合结构（4）的小面（40）具有相当于辐射通过区域（20）的面积含量的至少30％的总面积。
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52.发明申请公开(公告)号：US20130039617A1
公开(公告)日：2013-02-14
申请号：US13643934
申请日：2011-03-28
CPC分类号： G02B6/0023 , G02B6/0073 , H01L33/501 , H01L33/502 , H01L33/505 , H01L33/56 , H01L33/60 , H01L2224/48091 , H01L2224/8592 , H01L2933/0091 , H01L2924/00014
摘要： An optoelectronic component (1) comprises a carrier (2) and at least one semiconductor chip (3). The semiconductor chip (3) is arranged on the carrier (2) and designed for emitting a primary radiation (6). The semiconductor chip (3) is at least partly enclosed by an at least partly transparent medium (7) having a height (8) above the carrier (2) and a width (9) along the carrier (2). Particles (10, 11) are introduced into the medium (7) and interact with the primary radiation (6). The medium (7) has a ratio of the height (8) to the width (9) of greater than 1.
摘要翻译： 光电子元件（1）包括载体（2）和至少一个半导体芯片（3）。 半导体芯片（3）布置在载体（2）上并被设计用于发射初级辐射（6）。 半导体芯片（3）至少部分地被具有在载体（2）上方的高度（8）和沿载体（2）的宽度（9）的至少部分透明的介质（7）包围。 颗粒（10,11）被引入到介质（7）中并与主辐射（6）相互作用。 介质（7）的高度（8）与宽度（9）之比大于1。
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公开(公告)号：US20120256161A1
公开(公告)日：2012-10-11
申请号：US13260562
申请日：2010-03-15
申请人： Matthias Sabathil , Simon Kocur , Stefan Grötsch
发明人： Matthias Sabathil , Simon Kocur , Stefan Grötsch
IPC分类号： H01L33/04
CPC分类号： H01L25/0756 , H01L33/08 , H01L33/22 , H01L33/382 , H01L33/502 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting diode is specified, comprising a first semiconductor body (10), which comprises at least one active region (11) which is electrically contact-connected, wherein electromagnetic radiation (110) in a first wavelength range is generated in the active region (11) during the operation of the light-emitting diode, a second semiconductor body (20), which is fixed to the first semiconductor body (10) at a top side (10a) of the first semiconductor body (10), wherein the second semiconductor body (20) has a re-emission region (21) with a multiple quantum well structure (213), and wherein electromagnetic radiation (110) in the first wavelength range is absorbed and electromagnetic radiation in a second wavelength range (220) is re-emitted in the re-emission region (21) during the operation of the light-emitting diode, and a connecting material (30) arranged between the first (10) and second semiconductor body (20), wherein the connecting material (30) mechanically connects the first (10) and the second semiconductor body (20) to one another.
摘要翻译： 规定了一种发光二极管，其包括第一半导体本体（10），该第一半导体本体（10）包括至少一个电接触连接的有源区（11），其中在所述有源区中产生第一波长范围内的电磁辐射（110） 在所述发光二极管的操作期间，在所述第一半导体本体（10）的上侧（10a）固定到所述第一半导体本体（10）的第二半导体本体（20），其中， 第二半导体体（20）具有多重量子阱结构（213）的再发射区域（21），并且其中第一波长范围内的电磁辐射（110）被吸收，并且在第二波长范围内的电磁辐射（220 ）在发光二极管的操作期间在再发射区域（21）中重新发射，以及布置在第一（10）和第二半导体本体（20）之间的连接材料（30），其中连接材料 （30）机械连接fi （10）和第二半导体本体（20）。
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54.发明申请公开(公告)号：US20120146044A1
公开(公告)日：2012-06-14
申请号：US13138034
申请日：2009-11-02
CPC分类号： H01L33/22
摘要： In at least one embodiment of the optoelectronic semiconductor chip (1), the latter comprises a semiconductor layer sequence (2) comprising at least one active layer (3) designed for generating an electromagnetic radiation. Furthermore, the optoelectronic semiconductor chip (1) has coupling-out structures (4), which are fitted at least indirectly on a radiation passage area (20) of the semiconductor layer sequence (2). In this case, a material of the coupling-out structures (4) is different than a material of the semiconductor layer sequence (2). The refractive indices of the materials of the coupling-out structures (4) and of the semiconductor layer sequence (2) deviate from one another by at most 30%. Furthermore, facets (40) of the coupling-out structures (4) have a total area amounting to at least 30% of an area content of the radiation passage area (20).
摘要翻译： 在光电半导体芯片（1）的至少一个实施例中，后者包括半导体层序列（2），其包括设计用于产生电磁辐射的至少一个有源层（3）。 此外，光电子半导体芯片（1）具有耦合输出结构（4），其至少间接地配合在半导体层序列（2）的辐射通道区域（20）上。 在这种情况下，耦合结构（4）的材料与半导体层序列（2）的材料不同。 耦合出结构（4）和半导体层序列（2）的材料的折射率彼此相差至多30％。 此外，耦合结构（4）的小面（40）具有相当于辐射通过区域（20）的面积含量的至少30％的总面积。
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公开(公告)号：US20120043572A1
公开(公告)日：2012-02-23
申请号：US13123713
申请日：2009-09-30
申请人： Karl Engl , Matthias Sabathil
发明人： Karl Engl , Matthias Sabathil
IPC分类号： H01L33/60
CPC分类号： H01L33/382 , H01L33/22 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor body with a semiconductor layer sequence (1), the semiconductor layer sequence comprising an active layer (100) suitable for the generation of electromagnetic radiation, and a first electrical contact layer (4) is disclosed. The optoelectronic semiconductor body is provided for emiting electromagnetic radiation from a front side (2). The semiconductor layer sequence (1) comprises at least one opening (110) that penetrates fully through the semiconductor layer sequence (1) in the direction from the front side (2) to a rear side (3) that is opposite the front side (2). The first electrical contact layer (4) is arranged at the rear (3) of the semiconductor body, a section (40) of the first electrical contact layer (4) extends from the rear side (3) through the opening (110) to the front side (2) and covers a first sub-region (11) of a front-side main face (10) of the semiconductor layer sequence (1). A second sub-region (12) of the front-side main face (10) is uncovered by the first electrical contact layer (4).
摘要翻译： 公开了一种具有半导体层序列（1）的光电半导体本体，包括适于产生电磁辐射的有源层（100）的半导体层序列和第一电接触层（4）。 光电子半导体体被设置用于发射来自前侧（2）的电磁辐射。 所述半导体层序列（1）包括至少一个开口（110），所述至少一个开口（110）在从所述前侧（2）到与所述前侧（2）相反的方向上从所述半导体层序列（1） 2）。 第一电接触层（4）布置在半导体本体的后部（3）处，第一电接触层（4）的部分（40）从后侧（3）延伸穿过开口（110）至 所述前侧（2）并且覆盖所述半导体层序列（1）的前侧主面（10）的第一子区域（11）。 前侧主面（10）的第二子区域（12）不被第一电接触层（4）覆盖。
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公开(公告)号：US20100208763A1
公开(公告)日：2010-08-19
申请号：US12598747
申请日：2008-04-24
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/387 , H01L33/46 , H01L2924/0002 , H01L2933/0016 , H01S5/0217 , H01S5/0224 , H01S5/0425 , H01S5/105 , H01S5/18308 , H01S5/18347 , H01S5/1835 , H01S5/18369 , H01S5/18391 , H01S5/3095 , H01L2924/00
摘要： A semiconductor chip with a semiconductor body has a semiconductor layer sequence with an active region provided for generating radiation. A mirror structure that includes a mirror layer and a dielectric layer that is arranged at least in regions between the mirror layer and semiconductor body is arranged on the semiconductor body.
摘要翻译： 具有半导体本体的半导体芯片具有提供用于产生辐射的有源区的半导体层序列。 至少在镜面层和半导体本体之间的区域中配置有镜面层和电介质层的镜面结构配置在半导体本体上。
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公开(公告)号：US09620680B2
公开(公告)日：2017-04-11
申请号：US13123713
申请日：2009-09-30
申请人： Karl Engl , Matthias Sabathil
发明人： Karl Engl , Matthias Sabathil
CPC分类号： H01L33/382 , H01L33/22 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor body for emitting electromagnetic radiation from the front side with a semiconductor layer sequence and a first electrical contact layer, wherein the semiconductor layer sequence comprises at least one opening that penetrates fully through the semiconductor layer sequence in the direction from the front side to the rear side that is opposite the front side, the first electrical contact layer is arranged at the rear of the semiconductor body, a section of the first electrical contact layer extends from the rear side through the opening to the front side and covers a first sub-region of a front-side main face of the semiconductor layer sequence, and a second sub-region of the front-side main face is not covered by the first electrical contact layer.
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公开(公告)号：US20140070246A1
公开(公告)日：2014-03-13
申请号：US14006304
申请日：2012-03-07
IPC分类号： H01L33/26
CPC分类号： H01L33/08 , H01L33/0075 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/26 , H01L33/32 , H01L33/502 , H01L33/504
摘要： The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body (1), which comprises an active zone (11) in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body (1) through a radiation exit surface (1a), and—a second semiconductor body (2), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a shorter wavelength, wherein—the first semiconductor body (1) and the second semiconductor body (2) are produced separately from each other,—the second semiconductor body (2) is electrically inactive, and—the second semiconductor body (2) is in direct contact with the radiation exit surface (1a) and is attached there to the first semiconductor body (1) without connecting means.
摘要翻译： 本发明涉及一种发光半导体部件，包括：第一半导体本体（1），其包括活性区（11），其中在发光半导体部件产生电磁辐射的操作期间，产生至少一些 所述第一半导体本体（1）通过辐射出射表面（1a）离开所述第一半导体本体（1），以及 - 第二半导体本体（2），其适于将所述电磁辐射转换成具有较短波长的转换的电磁辐射，其中所述第一半导体 主体（1）和第二半导体本体（2）彼此分开制造， - 第二半导体体（2）是电不活动的，并且第二半导体本体（2）与辐射出口表面 1a），并且在没有连接装置的情况下附接到第一半导体本体（1）。
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公开(公告)号：US08450751B2
公开(公告)日：2013-05-28
申请号：US12596170
申请日：2008-04-24
申请人： Karl Engl , Patrick Rode , Lutz Hoeppel , Matthias Sabathil
发明人： Karl Engl , Patrick Rode , Lutz Hoeppel , Matthias Sabathil
CPC分类号： H01L33/58 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor body includes a semiconductor layer sequence which has an active layer suitable for generating electromagnetic radiation, and a first and a second electrical connecting layer. The semiconductor body is provided for emitting electromagnetic radiation from a front side. The first and the second electrical connecting layer are arranged at a rear side opposite the front side and are electrically insulated from one another by means of a separating layer. The first electrical connecting layer, the second electrical connecting layer and the separating layer laterally overlap and a partial region of the second electrical connecting layer extends from the rear side through a breakthrough in the active layer in the direction of the front side. Furthermore, a method for producing such an optoelectronic semiconductor body is specified.
摘要翻译： 光电半导体本体包括具有适于产生电磁辐射的有源层的半导体层序列和第一和第二电连接层。 半导体本体被设置用于从前侧发射电磁辐射。 第一和第二电连接层布置在与前侧相对的后侧，并且通过分离层彼此电绝缘。 第一电连接层，第二电连接层和分离层横向重叠，并且第二电连接层的部分区域从后侧沿着正面的方向通过有源层中的穿透而延伸。 此外，规定了这种光电子半导体体的制造方法。
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公开(公告)号：US08406265B2
公开(公告)日：2013-03-26
申请号：US12679892
申请日：2008-08-29
CPC分类号： H01S5/041 , B82Y20/00 , H01S5/026 , H01S5/34 , H01S5/4043
摘要： An optoelectronic component (1) is specified, comprising a semiconductor body (2) with a semiconductor layer sequence. The semiconductor layer sequence of the semiconductor body (2) comprises a pump region (3) provided for generating a pump radiation and an emission region (4) provided for generating an emission radiation. The emission region (4) and the pump region (3) are arranged one above the other. The pump radiation optically pumps the emission region (4) during operation of the optoelectronic component (1). The emission radiation emerges from the semiconductor body (2) with the semiconductor layer sequence in a lateral direction during operation of the optoelectronic component (1).
摘要翻译： 规定了光电子部件（1），其包括具有半导体层序列的半导体本体（2）。 半导体本体（2）的半导体层序列包括用于产生泵浦辐射的泵浦区域（3）和用于产生发射辐射的发射区域（4）。 发射区域（4）和泵浦区域（3）彼此上下排列。 在光电子部件（1）的操作期间，泵浦辐射光学泵浦发射区域（4）。 在光电子部件（1）的操作期间，发射辐射从半导体本体（2）出射，半导体层序列沿横向方向。
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