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61 条记录 (耗时 0.026 秒)

    Lighting device
    3.
    发明授权
    Lighting device 有权
    照明设备

    公开(公告)号：US09029878B2

    公开(公告)日：2015-05-12

    申请号：US13522508

    申请日：2011-01-17

    申请人： Matthias Sabathil ,  Norwin von Malm ,  Lutz Hoeppel ,  Stefan Illek ,  Bernd Barchmann ,  Patrick Rode

    发明人： Matthias Sabathil ,  Norwin von Malm ,  Lutz Hoeppel ,  Stefan Illek ,  Bernd Barchmann ,  Patrick Rode

    IPC分类号： H01L33/08 ,  H01L25/075 ,  H01L33/22 ,  H01L33/50 ,  H01L33/58 ,  H01L33/62

    CPC分类号： H01L25/0753 ,  H01L33/22 ,  H01L33/507 ,  H01L33/58 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more.

    摘要翻译： 一种具有前载体，后载体和多个发光二极管芯片的照明装置，其在运行时发光并释放废热，其中后载体至少在前载体上被选定的位置覆盖，发光二极管芯片布置 在后载体和前载体之间形成阵列，发光二极管由后和/或前载体电接触并由后载体和前载体机械固定，前载体热传导耦合到发光二极管芯片，并且包括光输出耦合 面对远离发光二极管芯片的光输出耦合面将发光二极管芯片释放的一部分废热释放到周围环境中，当发光二极管芯片的照明装置为100mW或更小时，每个发光二极管芯片的功率为100mW 具有100 lm / W以上的光收率。

    LIGHTING DEVICE
    4.
    发明申请
    LIGHTING DEVICE 有权
    照明设备

    公开(公告)号：US20130043496A1

    公开(公告)日：2013-02-21

    申请号：US13522508

    申请日：2011-01-17

    申请人： Matthias Sabathil ,  Norwin von Malm ,  Lutz Hoeppel ,  Stefan Illek ,  Bernd Barchmann ,  Patrick Rode

    发明人： Matthias Sabathil ,  Norwin von Malm ,  Lutz Hoeppel ,  Stefan Illek ,  Bernd Barchmann ,  Patrick Rode

    IPC分类号： H01L33/08

    CPC分类号： H01L25/0753 ,  H01L33/22 ,  H01L33/507 ,  H01L33/58 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more.

    摘要翻译： 一种具有前载体，后载体和多个发光二极管芯片的照明装置，其在运行时发光并释放废热，其中后载体至少在前载体上被选定的位置覆盖，发光二极管芯片布置 在后载体和前载体之间形成阵列，发光二极管由后和/或前载体电接触并由后载体和前载体机械固定，前载体热传导耦合到发光二极管芯片，并且包括光输出耦合 面对远离发光二极管芯片的光输出耦合面将发光二极管芯片释放的一部分废热释放到周围环境中，当发光二极管芯片的照明装置为100mW或更小时，每个发光二极管芯片的功率为100mW 具有100 lm / W以上的光收率。

    Optoelectronic component
    5.
    发明授权
    Optoelectronic component 有权
    光电元件

    公开(公告)号：US08811448B2

    公开(公告)日：2014-08-19

    申请号：US13120752

    申请日：2009-08-31

    申请人： Stefan Illek

    发明人： Stefan Illek

    IPC分类号： H01S3/091 ,  H01S5/04 ,  H01S5/183 ,  H01S5/14 ,  H01S5/18 ,  H01S5/00 ,  H01S5/02 ,  H01S5/40 ,  H01S5/022

    CPC分类号： H01S5/183 ,  H01L2224/48463 ,  H01S5/0071 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/02272 ,  H01S5/041 ,  H01S5/14 ,  H01S5/18 ,  H01S5/4031

    摘要： An optoelectronic component includes an optical pump device including a first radiation-generating layer and a first radiation exit area at a top side of the pump device, wherein electromagnetic radiation generated during operation of the pump device is coupled out from the pump device through the first radiation exit area transversely and at least in part non-perpendicularly with respect to the first radiation-generating layer, and a surface emitting semiconductor laser chip including a reflective layer sequence including a Bragg mirror, and a second radiation-generating layer, wherein the surface emitting semiconductor laser chip is fixed to the top side of the pump device, and the reflective layer sequence is arranged between the first radiation exit area and the second radiation-generating layer.

    摘要翻译： 光电子部件包括光泵装置，其包括位于泵装置顶侧的第一辐射产生层和第一辐射出口区域，其中在泵装置操作期间产生的电磁辐射通过第一 横向且至少部分地相对于第一辐射产生层非垂直的辐射出射面以及包括布拉格反射镜和第二辐射产生层的反射层序列的表面发射半导体激光器芯片，其中表面 发射半导体激光器芯片固定在泵装置的顶侧，并且反射层序列被布置在第一辐射出射区域和第二辐射产生层之间。

    Optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip
    6.
    发明授权
    Optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip 有权
    光电半导体芯片及其制造方法

    公开(公告)号：US08536603B2

    公开(公告)日：2013-09-17

    申请号：US13123779

    申请日：2009-10-12

    申请人： Stefan Illek ,  Uwe Strauss

    发明人： Stefan Illek ,  Uwe Strauss

    IPC分类号： H01L33/00

    CPC分类号： H01S5/12 ,  H01L33/14 ,  H01L2924/0002 ,  H01S5/0421 ,  H01S5/06256 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/209 ,  H01L2924/00

    摘要： An optoelectronic semiconductor chip having a semiconductor layer sequence with a plurality of layers arranged over one another includes an active layer with an active region which emits electromagnetic radiation in an emission direction when in operation, a first grating layer on the active layer which, in an emission direction, has a plurality of stripes in the form of grating lines extending perpendicularly to the emission direction with spaces arranged therebetween, and a second grating layer on the first grating layer which covers the stripes of the first grating layer and the spaces and which comprises a transparent material applied by non-epitaxial application.

    摘要翻译： 具有彼此排列的多个层的半导体层序列的光电子半导体芯片包括：有源层，具有在工作时发射方向上发射电磁辐射的有源区;活性层上的第一光栅层， 发射方向具有垂直于发射方向延伸的格栅线的形式的多个条纹，并且其间具有间隔布置的第一光栅层和覆盖第一光栅层和空间的条纹的第二光栅层，并且包括 通过非外延应用施加的透明材料。

    Method for producing a semiconductor laser, and semiconductor laser
    9.
    发明授权
    Method for producing a semiconductor laser, and semiconductor laser 有权
    半导体激光器的制造方法以及半导体激光器

    公开(公告)号：US07995633B2

    公开(公告)日：2011-08-09

    申请号：US12371292

    申请日：2009-02-13

    申请人： Juergen Dachs ,  Stefan Illek ,  Roland Schulz ,  Thomas Schwarz ,  Frank Singer ,  Heiko Unold

    发明人： Juergen Dachs ,  Stefan Illek ,  Roland Schulz ,  Thomas Schwarz ,  Frank Singer ,  Heiko Unold

    IPC分类号： H01S5/00 ,  H01L21/00

    CPC分类号： H01S5/0201

    摘要： A method for producing a multiplicity of semiconductor lasers (100) comprising the steps of providing a carrier wafer (30), producing an assembly (70) by applying a multiplicity of semiconductor laser chips (4) to a top side (31) of the carrier wafer (30), and singulating the assembly (70) to form a multiplicity of semiconductor lasers (100). Each semiconductor laser (100) comprises a mounting block (3) and at least one semiconductor laser chip (4). Each mounting block (3) has a mounting area (13) which runs substantially perpendicular to a top side (12) of the mounting block (3), on which top side the semiconductor laser chip (4) is arranged. The mounting area (13) is produced during the singulation of the assembly.

    摘要翻译： 一种用于制造多个半导体激光器（100）的方法，包括以下步骤：提供载体晶片（30），通过将多个半导体激光器芯片（4）施加到所述多个半导体激光器的顶侧（31）来产生组件（70） 载体晶片（30），并且分割组件（70）以形成多个半导体激光器（100）。 每个半导体激光器（100）包括安装块（3）和至少一个半导体激光器芯片（4）。 每个安装块（3）具有基本上垂直于安装块（3）的顶侧（12）延伸的安装区域（13），其上布置有半导体激光器芯片（4）的顶侧。 安装区域（13）在组件的分割过程中产生。