公开(公告)号：US07414286B2

公开(公告)日：2008-08-19

申请号：US11513969

申请日：2006-08-31

申请人： Franz Hirler ,  Martin Poelzl ,  Markus Zundel ,  Rudolf Zelsacher

发明人： Franz Hirler ,  Martin Poelzl ,  Markus Zundel ,  Rudolf Zelsacher

IPC分类号： H01L29/94

CPC分类号： H01L29/7813 ,  H01L29/0878 ,  H01L29/404 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66734

摘要： A trench transistor having a semiconductor body, in which a trench structure and an electrode structure embedded in the trench structure is disclosed. The electrode structure is electrically insulated from the semiconductor body by an insulation structure. The electrode structure has a gate electrode structure and a field electrode structure arranged below the gate electrode structure and electrically insulated from the latter. There is provided between the gate electrode structure and the field electrode structure a shielding structure for reducing the capacitive coupling between the gate electrode structure and the field electrode structure.

摘要翻译： 公开了一种具有半导体本体的沟槽晶体管，其中沟槽结构和嵌入沟槽结构中的电极结构被公开。 电极结构通过绝缘结构与半导体本体电绝缘。 电极结构具有栅电极结构和场电极结构，其布置在栅电极结构的下方并与之电绝缘。 在栅电极结构和场电极结构之间设置有用于减小栅电极结构和场电极结构之间的电容耦合的屏蔽结构。

公开(公告)号：US20070190739A1

公开(公告)日：2007-08-16

申请号：US11392363

申请日：2006-03-29

申请人： Markus Zundel ,  Norbert Krischke

发明人： Markus Zundel ,  Norbert Krischke

IPC分类号： H01L21/76 ,  H01L21/26

CPC分类号： H01L21/76243 ,  H01L29/42384 ,  H01L29/66787 ,  H01L29/78696

摘要： A semiconductor having an optimized insulation structure which is simple and inexpensive to produce and can be made smaller than LOCOS insulation structures is disclosed. An implantation mask on a surface of a semiconductor substrate is used to implant elements into the semiconductor substrate, which elements, on thermal activation, form an insulation region together with the further elements of the semiconductor substrate. The thermal activation is effected by means of laser irradiation, during which the semiconductor substrate is briefly melted and then recrystallizes during the subsequent cooling, so that the implanted elements form the insulation region together with the further elements of the semiconductor substrate.

摘要翻译： 公开了具有优化的绝缘结构的半导体，该绝缘结构简单且便宜并且可以制造成小于LOCOS绝缘结构。 在半导体衬底的表面上的注入掩模用于将元件注入到半导体衬底中，这些元件在热激活时与半导体衬底的其它元件一起形成绝缘区域。 热激活通过激光照射来实现，在此期间半导体衬底被短暂熔化，然后在随后的冷却期间再结晶，使得注入的元件与半导体衬底的其它元件一起形成绝缘区域。

公开(公告)号：US20070114600A1

公开(公告)日：2007-05-24

申请号：US11513969

申请日：2006-08-31

申请人： Franz Hirler ,  Martin Poelzl ,  Markus Zundel ,  Rudolf Zelsacher

发明人： Franz Hirler ,  Martin Poelzl ,  Markus Zundel ,  Rudolf Zelsacher

IPC分类号： H01L29/94

CPC分类号： H01L29/7813 ,  H01L29/0878 ,  H01L29/404 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66734

摘要： A trench transistor having a semiconductor body, in which a trench structure and an electrode structure embedded in the trench structure is disclosed. The electrode structure is electrically insulated from the semiconductor body by an insulation structure. The electrode structure has a gate electrode structure and a field electrode structure arranged below the gate electrode structure and electrically insulated from the latter. There is provided between the gate electrode structure and the field electrode structure a shielding structure for reducing the capacitive coupling between the gate electrode structure and the field electrode structure.

摘要翻译： 公开了一种具有半导体本体的沟槽晶体管，其中沟槽结构和嵌入沟槽结构中的电极结构被公开。 电极结构通过绝缘结构与半导体本体电绝缘。 电极结构具有栅电极结构和场电极结构，其布置在栅电极结构的下方并与之电绝缘。 在栅电极结构和场电极结构之间设置有用于减小栅电极结构和场电极结构之间的电容耦合的屏蔽结构。

公开(公告)号：US20070093019A1

公开(公告)日：2007-04-26

申请号：US11527743

申请日：2006-09-26

申请人： Walter Rieger ,  Paul Ganitzer ,  Oliver Haeberlen ,  Franz Hirler ,  Markus Zundel ,  Rudolf Zelsacher ,  Erwin Bacher

发明人： Walter Rieger ,  Paul Ganitzer ,  Oliver Haeberlen ,  Franz Hirler ,  Markus Zundel ,  Rudolf Zelsacher ,  Erwin Bacher

IPC分类号： H01L21/8242 ,  H01L21/76

CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L29/086 ,  H01L29/0869 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/456 ,  H01L29/66348 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397

摘要： Method for producing a connection electrode for two semiconductor zones arranged one above another The invention relates to a method for producing a connection electrode for a first semiconductor zone and a second semiconductor zone, which are arranged one above another and are doped complementarily with respect to one another, which method comprises the method steps of: producing a trench extending through the first semiconductor zone right into the second semiconductor zone in such a way that the first semiconductor zone is uncovered at sidewalls of the trench and the second semiconductor zone is uncovered at least at a bottom of the trench, applying a protective layer to one of the first and second semiconductor zones in the trench, producing a first connection zone in the other of the two semiconductor zones, which is not covered by the protective layer, by introducing dopant atoms into this other semiconductor zone via the trench, the connection zone being of the same conductivity type as said other semiconductor zone, but doped more highly, depositing an electrode layer at least onto the sidewalls and the bottom of the trench for the purpose of producing the connection electrode.

摘要翻译： 一种制造用于两个半导体区域的连接电极的方法本发明涉及一种用于制造用于第一半导体区域和第二半导体区域的连接电极的方法，所述连接电极被布置在另一个之上，并且相对于一个 另一方面，该方法包括以下方法步骤：产生通过第一半导体区域直接进入第二半导体区域的沟槽，使得第一半导体区域在沟槽的侧壁处未被覆盖，并且至少覆盖第二半导体区域 在沟槽的底部，在沟槽中的第一和第二半导体区域中的一个上施加保护层，在两个半导体区域中的另一个半导体区域中的第一连接区域中，未被保护层覆盖，通过引入掺杂剂 原子通过沟槽进入该另一半导体区，连接区具有相同的导电性 类型作为所述另一半导体区，但是掺杂更高，至少在沟槽的侧壁和底部上沉积电极层以产生连接电极。

公开(公告)号：US07173306B2

公开(公告)日：2007-02-06

申请号：US10927948

申请日：2004-08-27

申请人： Franz Hirler ,  Ralf Henninger ,  Frank Pfirsch ,  Markus Zundel ,  Jenoe Tihanyi

发明人： Franz Hirler ,  Ralf Henninger ,  Frank Pfirsch ,  Markus Zundel ,  Jenoe Tihanyi

IPC分类号： H01L29/76

CPC分类号： H01L29/7802 ,  H01L29/0619 ,  H01L29/402 ,  H01L29/407 ,  H01L29/7813 ,  H01L29/861

摘要： The invention relates to a method for fabricating a drift zone of a vertical semiconductor component and to a vertical semiconductor component having the following features: a semiconductor body (100) having a first side (101) and a second side (102), a drift zone (30) of a first conduction type which is arranged in the region between the first and the second sides (101, 102) and is formed for the purpose of taking up a reverse voltage, a field electrode arrangement arranged in the drift zone (30) and having at least one electrically conducted field electrode (40; 40A–40E; 90A–90J) arranged in a manner insulated from the semiconductor body (100), an electrical potential of the at least one field electrode (40; 40A–40E; 90A–90J) varying in the vertical direction of the semiconductor body (100) at least when a reverse voltage is applied.

摘要翻译： 本发明涉及一种用于制造垂直半导体部件和具有以下特征的垂直半导体部件的漂移区的方法：具有第一侧（101）和第二侧（102）的半导体本体（100），漂移 第一导电类型的区域（30）布置在第一和第二侧面（101,102）之间的区域中并且被形成为用于吸收反向电压的目的，设置在漂移区域中的场电极布置（ 30），并且具有以与半导体本体（100）绝缘的方式布置的至少一个导电场电极（40; 40A-40E; 90A-90J），所述至少一个场电极 40; 40A-40E; 90A-90J），至少在施加反向电压时，在半导体本体（100）的垂直方向上变化。

公开(公告)号：US06833584B2

公开(公告)日：2004-12-21

申请号：US10165912

申请日：2002-06-10

申请人： Ralf Henninger ,  Franz Hirler ,  Manfred Kotek ,  Joost Larik ,  Markus Zundel

发明人： Ralf Henninger ,  Franz Hirler ,  Manfred Kotek ,  Joost Larik ,  Markus Zundel

IPC分类号： H01L2976

CPC分类号： H01L29/7811 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/7397 ,  H01L29/7813

摘要： A trench power semiconductor component is described which has an edge cell in which an edge trench is provided. The edge trench, at least on an outer side wall, has a thicker insulating layer than an insulating layer of trenches of the cell array. This simple configuration provides a high dielectric strength and is economical to produce.

摘要翻译： 描述了具有其中设置有边缘沟槽的边缘单元的沟槽功率半导体部件。 至少在外侧壁上的边缘沟槽具有比电池阵列的沟槽的绝缘层更厚的绝缘层。 这种简单的结构提供了很高的介电强度并且是经济的。

公开(公告)号：US09324625B2

公开(公告)日：2016-04-26

申请号：US13484340

申请日：2012-05-31

申请人： Dirk Ahlers ,  Markus Zundel ,  Dietrich Bonart ,  Ludger Borucki

发明人： Dirk Ahlers ,  Markus Zundel ,  Dietrich Bonart ,  Ludger Borucki

IPC分类号： H01L29/78 ,  H02J7/00 ,  H01L23/051 ,  H01L29/36 ,  H01L29/739 ,  H01L29/08 ,  H01L29/861 ,  H01L23/24 ,  H02J7/14

CPC分类号： H01L29/7802 ,  H01L23/051 ,  H01L23/24 ,  H01L29/0634 ,  H01L29/0834 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/7391 ,  H01L29/861 ,  H01L2924/0002 ,  H02J7/14 ,  H02J7/242 ,  H01L2924/00

摘要： A gated diode may include source zones and a drain zone which are both of a first conductivity type. The source zones directly adjoin a first surface of a semiconductor die and the drain zone directly adjoins an opposite second surface of the semiconductor die. The drain zone includes a drift zone formed in an epitaxial layer of the semiconductor die. Base zones of a second conductivity type, which is the opposite of the first conductivity type, are provided between the drain zones and the source zones. The drift zone further includes adjustment zones directly adjoining a base zone and arranged between the respective base zone and the second surface, respectively. A net dopant concentration in the adjustment zone is at least twice a net dopant concentration in the second sub-zone. The adjustment zones precisely define the reverse breakdown voltage.

摘要翻译： 门控二极管可以包括源极区和漏极区，它们都是第一导电类型。 源极区域直接邻接半导体管芯的第一表面，并且漏极区域直接邻接半导体管芯的相对的第二表面。 漏区包括形成在半导体管芯的外延层中的漂移区。 第二导电类型的与第一导电类型相反的基区设置在排水区和源区之间。 漂移区还包括直接邻接基部区域并且分别布置在相应的基部区域和第二表面之间的调节区域。 调整区域中的净掺杂剂浓度至少为第二子区域中的净掺杂剂浓度的两倍。 调整区域精确定义反向击穿电压。

公开(公告)号：US09142447B2

公开(公告)日：2015-09-22

申请号：US12977351

申请日：2010-12-23

申请人： Markus Zundel ,  Norbert Krischke

发明人： Markus Zundel ,  Norbert Krischke

IPC分类号： H01L29/66 ,  H01L21/762 ,  H01L29/786 ,  H01L29/423

CPC分类号： H01L21/76243 ,  H01L29/42384 ,  H01L29/66787 ,  H01L29/78696

摘要： A semiconductor having an optimized insulation structure which is simple and inexpensive to produce and can be made smaller than LOCOS insulation structures is disclosed. An implantation mask on a surface of a semiconductor substrate is used to implant elements into the semiconductor substrate, which elements, on thermal activation, form an insulation region together with the further elements of the semiconductor substrate. The thermal activation is effected by means of laser irradiation, during which the semiconductor substrate is briefly melted and then recrystallizes during the subsequent cooling, so that the implanted elements form the insulation region together with the further elements of the semiconductor substrate.

摘要翻译： 公开了具有优化的绝缘结构的半导体，该绝缘结构简单且便宜并且可以制造成小于LOCOS绝缘结构。 在半导体衬底的表面上的注入掩模用于将元件注入到半导体衬底中，这些元件在热激活时与半导体衬底的其它元件一起形成绝缘区域。 热激活通过激光照射来实现，在此期间半导体衬底被短暂熔化，然后在随后的冷却期间再结晶，使得注入的元件与半导体衬底的其它元件一起形成绝缘区域。

公开(公告)号：US08823087B2

公开(公告)日：2014-09-02

申请号：US13420768

申请日：2012-03-15

申请人： Franz Hirler ,  Markus Zundel

发明人： Franz Hirler ,  Markus Zundel

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L21/2255 ,  H01L21/2257 ,  H01L21/26586 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66734

摘要： A semiconductor device includes a trench region extending into a drift zone of a semiconductor body from a surface. The semiconductor device further includes a dielectric structure including a first step and a second step along a lateral side of the trench region. The semiconductor device further includes an auxiliary structure of a first conductivity type between the first step and the second step, a gate electrode in the trench region and a body region of a second conductivity type other than the first conductivity type of the drift zone. The auxiliary structure adjoins each one of the drift zone, the body region and the dielectric structure.

摘要翻译： 半导体器件包括从表面延伸到半导体本体的漂移区的沟槽区域。 半导体器件还包括电介质结构，其包括沿沟槽区域的横向侧的第一步骤和第二步骤。 半导体器件还包括在第一步骤和第二步骤之间的第一导电类型的辅助结构，沟槽区域中的栅极电极和除漂移区域的第一导电类型之外的第二导电类型的体区域。 辅助结构邻接漂移区，体区和电介质结构中的每一个。

公开(公告)号：US20140073123A1

公开(公告)日：2014-03-13

申请号：US13614076

申请日：2012-09-13

申请人： Andreas Meiser ,  Markus Zundel

发明人： Andreas Meiser ,  Markus Zundel

IPC分类号： H01L21/768 ,  H01L21/28

CPC分类号： H01L29/7813 ,  H01L21/28008 ,  H01L21/28229 ,  H01L21/743 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L29/1095 ,  H01L29/401 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/4916 ,  H01L29/495 ,  H01L29/51 ,  H01L29/66734 ,  H01L29/7827 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a method for producing a controllable semiconductor component. In a semiconductor body with a top side and a bottom side, a first trench protruding from the top side into the semiconductor body and a second trench protruding from the top side into the semiconductor body are formed in a common etching process. The first trench has a first width and the second trench has a second width greater than the first width. Then, in a common process, an oxide layer is formed in the first trench and in the second trench such that the oxide layer fills the first trench and electrically insulates a surface of the second trench. Subsequently, the oxide layer is removed from the first trench completely or at least partly such that the semiconductor body comprises an exposed first surface area arranged in the first trench.

摘要翻译： 公开了一种制造可控半导体部件的方法。 在具有顶侧和底侧的半导体本体中，在公共蚀刻工艺中形成从顶侧突出到半导体本体的第一沟槽和从顶侧突出到半导体本体中的第二沟槽。 第一沟槽具有第一宽度，第二沟槽具有大于第一宽度的第二宽度。 然后，在共同的工艺中，在第一沟槽和第二沟槽中形成氧化物层，使得氧化物层填充第一沟槽并使第二沟槽的表面电绝缘。 随后，完全或至少部分地从第一沟槽去除氧化物层，使得半导体主体包括布置在第一沟槽中的暴露的第一表面区域。