公开(公告)号：US20050208753A1

公开(公告)日：2005-09-22

申请号：US11131740

申请日：2005-05-17

申请人： Andrew Ott ,  Lawrence Wong ,  Patrick Morrow ,  Jihperng Leu ,  Grant Kloster

发明人： Andrew Ott ,  Lawrence Wong ,  Patrick Morrow ,  Jihperng Leu ,  Grant Kloster

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/4763

CPC分类号： H01L21/76807 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A dual-damascene process where first alternate ILDs are made of a first material and second alternate ILDs are made of a second material. Each material is etchable at a faster rate than the other in the presence of different etchant such as for an organic polymer and an inorganic low k material. This allows the ILDs to be deposited alternately on one another without an etchant stop layer thereby reducing capacitance.

摘要翻译： 双镶嵌工艺，其中第一替代ILD由第一材料制成，第二替代ILD由第二材料制成。 在存在不同的蚀刻剂（例如有机聚合物和无机低k材料）的情况下，每种材料可以以比另一种更快的速度进行刻蚀。 这允许ILD彼此交替沉积而没有蚀刻剂停止层，从而降低电容。

公开(公告)号：US20050189632A1

公开(公告)日：2005-09-01

申请号：US10791492

申请日：2004-03-01

申请人： Patrick Morrow ,  Grant Kloster

发明人： Patrick Morrow ,  Grant Kloster

IPC分类号： H01L21/50 ,  H01L21/56 ,  H01L23/02 ,  H01L23/31 ,  H01L23/48 ,  H01L25/065

CPC分类号： H01L25/0657 ,  H01L21/563 ,  H01L23/3185 ,  H01L23/481 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06582 ,  H01L2924/00

摘要： The invention provides a sealing layer that seals metal bonding structures between three dimensional bonded integrated circuits from a surrounding environment. A material may be applied to fill a volume between the bonded integrated circuits or seal the perimeter of the volume between the bonded integrated circuits. The material may be the same material as that used for underfilling the volume between the bottom integrated circuit and a substrate.

摘要翻译： 本发明提供一种密封层，其密封来自周围环境的三维结合集成电路之间的金属结合结构。 可以施加材料以填充结合的集成电路之间的体积，或者密封结合的集成电路之间的体积的周长。 该材料可以与用于底部集成电路和基板之间的体积填充所用的材料相同。

公开(公告)号：US20050181593A1

公开(公告)日：2005-08-18

申请号：US10302073

申请日：2002-11-21

申请人： Jihperng Leu ,  Grant Kloster ,  David Gracias ,  Lee Rockford ,  Peter Moon ,  Chris Barns

发明人： Jihperng Leu ,  Grant Kloster ,  David Gracias ,  Lee Rockford ,  Peter Moon ,  Chris Barns

IPC分类号： H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/76835 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/312 ,  H01L21/3124 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/7682

摘要： An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer, initially comprising a porous matrix and a porogen, is formed. Subsequent to other processing treatments, the porogen is decomposed and removed from at least a portion of the porous matrix, leaving voids defined by the porous matrix in areas previously occupied by the porogen. The resultant structure has a desirably low k value as a result of the porosity and materials comprising the porous matrix and porogen. The composite dielectric layer may be used in concert with other dielectric layers of varying porosity, dimensions, and material properties to provide varied mechanical and electrical performance profiles.

摘要翻译： 公开了一种层间电介质结构及其制造方法。 形成初始包含多孔基质和致孔剂的复合介电层。 在其它处理处理之后，致孔剂从多孔基体的至少一部分分解和除去，留下由多孔基质定义的空隙，其中先前由致孔剂占据的区域。 所得结构由于孔隙率和包含多孔基质和致孔剂的材料而具有期望的低k值。 复合介电层可以与具有不同孔隙率，尺寸和材料性质的其它电介质层一起使用，以提供不同的机械和电气性能轮廓。

公开(公告)号：US20050164489A1

公开(公告)日：2005-07-28

申请号：US11045447

申请日：2005-01-27

申请人： Grant Kloster ,  Jihperng Leu ,  Hyun-Mog Park

发明人： Grant Kloster ,  Jihperng Leu ,  Hyun-Mog Park

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L21/4763

CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L2924/0002 ,  H01L2924/00

摘要： An embodiment of the present invention includes a method to form an air gap in a multi-layer structure. A dual damascene structure is formed on a substrate. The dual damascene structure has a metallization layer, a barrier layer, a sacrificial layer, and a hard mask layer. The sacrificial layer is made of a first sacrificial material having substantial thermal stability and decomposable by an electron beam. The sacrificial layer is removed by the electron beam to create the air gap between the barrier layer and the hard mask layer.

公开(公告)号：US06905958B2

公开(公告)日：2005-06-14

申请号：US10628297

申请日：2003-07-25

申请人： David H. Gracias ,  Grant Kloster

发明人： David H. Gracias ,  Grant Kloster

IPC分类号： H01L21/469 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/76838 ,  B82Y30/00 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

摘要： A structure and method for protecting exposed copper lines with chemisorbed, sacrificial, organic monolayers from further processing steps are herein described.

摘要翻译： 本文描述了用于通过进一步处理步骤用化学吸附的牺牲性有机单层保护暴露的铜线的结构和方法。

公开(公告)号：US06867125B2

公开(公告)日：2005-03-15

申请号：US10259047

申请日：2002-09-26

申请人： Grant Kloster ,  Jihperng Leu ,  Hyun-Mog Park

发明人： Grant Kloster ,  Jihperng Leu ,  Hyun-Mog Park

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L21/4763

CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L2924/0002 ,  H01L2924/00

摘要： An embodiment of the present invention includes a method to form an air gap in a multi-layer structure. A dual damascene structure is formed on a substrate. The dual damascene structure has a metallization layer, a barrier layer, a sacrificial layer, and a hard mask layer. The sacrificial layer is made of a first sacrificial material having substantial thermal stability and decomposable by an electron beam. The sacrificial layer is removed by the electron beam to create the air gap between the barrier layer and the hard mask layer.

摘要翻译： 本发明的一个实施例包括一种在多层结构中形成气隙的方法。 在基板上形成双镶嵌结构。 双镶嵌结构具有金属化层，阻挡层，牺牲层和硬掩模层。 牺牲层由具有实质的热稳定性并可由电子束分解的第一牺牲材料制成。 通过电子束除去牺牲层以产生阻挡层和硬掩模层之间的气隙。

公开(公告)号：US06682989B1

公开(公告)日：2004-01-27

申请号：US10300378

申请日：2002-11-20

申请人： Michael D. Goodner ,  Grant Kloster ,  Steven W. Johnston

发明人： Michael D. Goodner ,  Grant Kloster ,  Steven W. Johnston

IPC分类号： H01L2176

CPC分类号： H01L21/312 ,  C23C18/1607 ,  C23C18/1639 ,  C23C18/1641 ,  C23C18/1653 ,  C23C18/1868 ,  C23C18/1893 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/76843 ,  H01L21/76874 ,  H01L23/53238

摘要： A surface may be selectively coated with a polymer using an induced surface grafting or polymerization reaction. The reaction proceeds in those regions that are polymerizable and not in other regions. Thus, a semiconductor structure having organic regions and metal regions exposed, for example, may have the organic polymers formed selectively on the organic regions and not on the unpolymerizable or metal regions.

摘要翻译： 使用诱导的表面接枝或聚合反应可以用聚合物选择性地涂布表面。 反应在可聚合的区域中进行，而不在其它区域。 因此，具有例如露出的有机区域和金属区域的半导体结构可以具有在有机区域而不是在不可聚合或金属区域上有选择地形成的有机聚合物。