公开(公告)号：US10319903B2

公开(公告)日：2019-06-11

申请号：US15364153

申请日：2016-11-29

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey

IPC: H01L43/08 ,  H01L27/20 ,  H01L27/22 ,  H01L43/10

Abstract: Some embodiments include a magnetic tunnel junction device having a first magnetic electrode, a second magnetic electrode, and a tunnel insulator material between the first and second magnetic electrodes. A tungsten-containing material is directly against one of the magnetic electrodes. In some embodiments the tungsten-containing material may be in a first crystalline lattice arrangement, and the directly adjacent magnetic electrode may be in a second crystalline lattice arrangement different from said first crystalline lattice arrangement. In some embodiments the tungsten-containing material, the first magnetic electrode, the tunnel insulator material and the second magnetic electrode all comprise a common crystalline lattice arrangement.

公开(公告)号：US10242989B2

公开(公告)日：2019-03-26

申请号：US14282520

申请日：2014-05-20

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey ,  Lei Bi ,  Roy E. Meade ,  Qian Tao ,  Ashonita A. Chavan

IPC: H01L27/115 ,  H01L27/11507 ,  H01L49/02 ,  H01L27/1159 ,  H01L21/28 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78

Abstract: A ferroelectric memory device includes a plurality of memory cells. Each of the memory cells comprises at least one electrode and a ferroelectric crystalline material disposed proximate the at least one electrode. The ferroelectric crystalline material is polarizable by an electric field capable of being generated by electrically charging the at least one electrode. The ferroelectric crystalline material comprises a polar and chiral crystal structure without inversion symmetry through an inversion center. The ferroelectric crystalline material does not consist essentially of an oxide of at least one of hafnium (Hf) and zirconium (Zr).

公开(公告)号：US20180277373A1

公开(公告)日：2018-09-27

申请号：US15986129

申请日：2018-05-22

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade ,  Sumeet C. Pandey

IPC: H01L21/268 ,  H01L21/02 ,  H01L29/06 ,  H01L21/477

CPC classification number: H01L21/268 ,  H01L21/02521 ,  H01L21/02568 ,  H01L21/0259 ,  H01L21/02675 ,  H01L21/428 ,  H01L21/477 ,  H01L29/0665

Abstract: A method of forming a semiconductor device structure comprises forming at least one 2D material over a substrate. The at least one 2D material is treated with at least one laser beam having a frequency of electromagnetic radiation corresponding to a resonant frequency of crystalline defects within the at least one 2D material to selectively energize and remove the crystalline defects from the at least one 2D material. Additional methods of forming a semiconductor device structure, and related semiconductor device structures, semiconductor devices, and electronic systems are also described.

公开(公告)号：US20180144927A1

公开(公告)日：2018-05-24

申请号：US15857920

申请日：2017-12-29

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey ,  Brenda D. Kraus ,  Stefan Uhlenbrock ,  John A. Smythe ,  Timothy A. Quick

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02312 ,  H01L21/0234

Abstract: Methods of forming silicon nitride. Silicon nitride is formed on a substrate by atomic layer deposition at a temperature of less than or equal to about 275° C. The as-formed silicon nitride is exposed to a plasma. The silicon nitride may be formed as a portion of silicon nitride and at least one other portion of silicon nitride. The portion of silicon nitride and the at least one other portion of silicon nitride may be exposed to a plasma treatment. Methods of forming a semiconductor structure are also disclosed, as are semiconductor structures and silicon precursors.

公开(公告)号：US09871044B2

公开(公告)日：2018-01-16

申请号：US14934659

申请日：2015-11-06

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey ,  Gurtej S. Sandhu ,  Wayne I. Kinney ,  Karl W. Holtzclaw

IPC: H01L27/108 ,  G11C11/407 ,  G11C11/404 ,  H01L49/02

CPC classification number: H01L27/10808 ,  G11C11/404 ,  G11C11/407 ,  H01L28/65

Abstract: Volatile memory cells including dielectric materials exhibiting a nonlinear capacitance as a function of voltage. The volatile memory cells comprise a source region and a drain region within a substrate and a capacitor coupled to one of the source region and the drain region. The capacitor includes a charge storage material disposed between a pair of electrodes. The charge storage material has a crystal structure comprising an oxide of zirconium, hafnium, and bismuth, and is configured and formulated to transition from a first phase to a second phase exhibiting a higher capacitance than the first phase responsive to application of an electrical field. A digit line is electrically coupled to at least one electrode of the pair of electrodes and one of the source region and the drain region. Semiconductor devices and systems including the volatile memory cells and related methods of operating the volatile memory cells are also described.

公开(公告)号：US12052929B2

公开(公告)日：2024-07-30

申请号：US17649771

申请日：2022-02-02

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Sumeet C. Pandey

IPC: H10N50/10 ,  H10B61/00 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

CPC classification number: H10N50/10 ,  H10B61/00 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

Abstract: A magnetic cell includes a magnetic region formed from a precursor magnetic material comprising a diffusive species and at least one other species. An amorphous region is proximate to the magnetic region and is formed from a precursor trap material comprising at least one attractor species having at least one trap site and a chemical affinity for the diffusive species. The diffusive species is transferred from the precursor magnetic material to the precursor trap material where it bonds to the at least one attractor species at the trap sites. The species of the enriched trap material may intermix such that the enriched trap material becomes or stays amorphous. The depleted magnetic material may then be crystallized through propagation from a neighboring crystalline material without interference from the amorphous, enriched trap material. This enables high tunnel magnetoresistance and high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

公开(公告)号：US11935782B2

公开(公告)日：2024-03-19

申请号：US17653790

申请日：2022-03-07

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Marko Milojevic ,  John A. Smythe ,  Timothy A. Quick ,  Sumeet C. Pandey

IPC: H01L21/768 ,  H01L21/28 ,  H01L21/67 ,  H01L23/522 ,  H01L23/528 ,  H01L23/538 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L21/76843 ,  H01L21/28247 ,  H01L21/67069 ,  H01L21/76814 ,  H01L21/76853 ,  H01L21/76855 ,  H01L23/5226 ,  H01L23/5228 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/5386 ,  H01L29/401 ,  H01L29/4232 ,  H01L29/66795

Abstract: A method of forming a structure comprises forming a pattern of elongate features extending vertically from a base structure. Conductive material is formed on the elongate features. After completing the forming of the pattern of elongate features, the elongate features, the conductive material, or both is (are) exposed to at least one surface treatment gas. The at least one surface treatment gas comprises at least one species formulated to diminish attractive or cohesive forces at a surface of the conductive material. Apparatus and additional methods are also described.

公开(公告)号：US20210381107A1

公开(公告)日：2021-12-09

申请号：US16891687

申请日：2020-06-03

Applicant: Micron Technology, Inc.

Inventor： John A. Smythe ,  Gurtej S. Sandhu ,  Sumeet C. Pandey ,  Michael E. Koltonski

IPC: C23C16/503 ,  C23C16/32 ,  C23C16/38

Abstract: A material deposition system comprises a precursor source and a chemical vapor deposition apparatus in selective fluid communication with the precursor source. The precursor source configured to contain at least one metal-containing precursor material in one or more of a liquid state and a solid state. The chemical vapor deposition apparatus comprises a housing structure, a distribution manifold, and a substrate holder. The housing structure is configured and positioned to receive at least one feed fluid stream comprising the at least one metal-containing precursor material. The distribution manifold is within the housing structure and is in electrical communication with a signal generator. The substrate holder is within the housing structure, is spaced apart from the distribution assembly, and is in electrical communication with an additional signal generator. A microelectronic device and methods of forming a microelectronic device also described.

公开(公告)号：US10930842B2

公开(公告)日：2021-02-23

申请号：US16414537

申请日：2019-05-16

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey

IPC: H01L43/10 ,  H01L43/08 ,  H01L27/22 ,  H01L27/20

Abstract: Some embodiments include a magnetic tunnel junction device having a first magnetic electrode, a second magnetic electrode, and a tunnel insulator material between the first and second magnetic electrodes. A tungsten-containing material is directly against one of the magnetic electrodes. In some embodiments the tungsten-containing material may be in a first crystalline lattice arrangement, and the directly adjacent magnetic electrode may be in a second crystalline lattice arrangement different from said first crystalline lattice arrangement. In some embodiments the tungsten-containing material, the first magnetic electrode, the tunnel insulator material and the second magnetic electrode all comprise a common crystalline lattice arrangement.

公开(公告)号：US20180197735A1

公开(公告)日：2018-07-12

申请号：US15913218

申请日：2018-03-06

Applicant: Micron Technology, Inc.

Inventor： Timothy A. Quick ,  Sumeet C. Pandey ,  Stefan Uhlenbrock

IPC: H01L21/02 ,  C01B21/068 ,  C07F7/02 ,  C09D7/63 ,  H01L21/768

CPC classification number: H01L21/02208 ,  C01B21/068 ,  C07F7/025 ,  C09D7/63 ,  C23C16/00 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45525 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/76831

Abstract: A silicon chalcogenate precursor comprising the chemical formula of Si(XR1)nR24-n, where X is sulfur, selenium, or tellurium, R1 is hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, each R2 is independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, and n is 1, 2, 3, or 4. Methods of forming the silicon chalcogenate precursor, methods of forming silicon nitride, and methods of forming a semiconductor structure are also disclosed.