摘要:
A surface mounted electronic interconnect device. The device includes a coaxial electrical pad comprising a plurality of conductive surfaces on a substrate corresponding to the conductor arrangement of a coaxial connector; and, a coaxial connector comprising a dielectric material having a center opening and isolated electrically conductive interior and exterior surfaces that are planar with the ends of the connector. The dielectric separates the inner conductive surface from the outer conductive surface and is tubularly shaped having an inner wall for the electrically conductive interior surface. The coaxial connector inner and outer conductors may alternatively be comprised of microsprings. The coaxial connector has first and second ends, the first end for attachment to an electronic package and the second end for pluggable attachment to a PC board. A socket for mating with the coaxial connector second end is demonstrated, comprising a body and inner and outer conductors and configured so as to contact the interior and exterior surfaces of the coaxial connector at different times. The inner conductor of the socket is adapted to be received within the electrically conductive interior surface of the coaxial connector.
摘要:
One aspect of the invention relates to an interconnect for an SOFC wherein the interconnect is made from a cermet including partially stabilized tetragonal zirconia and a superalloy that is resistant to oxidizing and reducing conditions. Another aspect of the invention relates to an SOFC having vias for carrying fuel and an oxidant and at least one patterned feature in the anode, electrolyte, cathode and/or interconnect for laterally distributing the fuel or oxidant.
摘要:
Disclosed is an SOFC having a catalytic anode including a porous, ceramic anode including a catalyst, wherein the catalyst is selected from the group consisting of platinum, rhodium, ruthenium and mixtures thereof; a dense, solid electrolyte adjacent to the porous, ceramic anode; a porous, ceramic cathode adjacent to the dense, solid electrolyte; and a dense, ceramic interconnect adjacent to the porous, ceramic cathode, wherein the dense, ceramic interconnect has nonintersecting passages for the flow of a fuel and an oxidant. Also disclosed is a method to make the SOFC having a catalytic anode.
摘要:
Electronic packages made with a high area percent coverage of blanket metal may be prone to certain kinds of ceramic defects. In aluminum nitride, these defects may be related to decomposition of the liquid sintering aid. In this experiment, unique additions to the metallization prevented the formation of certain ceramic defects. Our approach involves a unique composition used in an existing process.
摘要:
Multiple vias are produced coaxially or in axis parallel alignment in a first or primary through-hole in a printed circuit board, chip carrier or like electrical device by producing a primary metallized through hole or via which is then filled or coated with a dielectric material which is also placed on both surfaces of the device at the ends of the via. The dielectric material inside the via can then be provided with at least one coaxial through-hole or multiple axis parallel through holes which can be metallized to form conductive paths between the surfaces of the device. Portions of the dielectric surface layer can be removed to expose contacts to the inner metallized via. Successive coaxial vias can be made in any number by the method of the invention. In addition electrical signal paths can be isolated within voltage or ground co-axial conductors.
摘要:
An electronic interconnect device and methods of making the device. The device comprises a coaxial connector comprising a dielectric material having a center opening and isolated electrically conductive interior and exterior surfaces. The coaxial connector having first and second ends, the first end for attachment to an electronic package and the second end for pluggable attachment to a PC board.
摘要:
Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.