公开(公告)号：US06673724B2

公开(公告)日：2004-01-06

申请号：US10037018

申请日：2001-11-07

申请人： John Forster ,  Praburam Gopalraja ,  Bradley O. Stimson ,  Liubo Hong

发明人： John Forster ,  Praburam Gopalraja ,  Bradley O. Stimson ,  Liubo Hong

IPC分类号： H01L2131

CPC分类号： C23C14/345 ,  C23C14/046 ,  H01J37/32082 ,  H01J37/32431 ,  H01J37/3405 ,  H01L21/2855 ,  H01L21/76877

摘要： The present invention provides a method and apparatus for achieving conformal step coverage of one or more materials on a substrate using sputtered ionized material. A target provides a source of material to be sputtered by a plasma and then ionized by an inductive coil, thereby producing electrons and ions. In one embodiment, one or both of the signals to the substrate and the target are modulated. Preferably, the modulated signal to the substrate includes a negative voltage portion and a zero voltage portion.

摘要翻译： 本发明提供一种使用溅射电离材料在基板上实现一种或多种材料的适形步骤覆盖的方法和装置。 目标物提供由等离子体溅射的材料源，然后由感应线圈电离，从而产生电子和离子。 在一个实施例中，对衬底和靶的信号中的一个或两个进行调制。 优选地，到衬底的调制信号包括负电压部分和零电压部分。

公开(公告)号：US06461483B1

公开(公告)日：2002-10-08

申请号：US09523333

申请日：2000-03-10

申请人： Praburam Gopalraja ,  Bradley O. Stimson ,  John C. Forster ,  Wei Wang

发明人： Praburam Gopalraja ,  Bradley O. Stimson ,  John C. Forster ,  Wei Wang

IPC分类号： C23C1432

CPC分类号： H01J37/321 ,  C23C14/046 ,  C23C14/358 ,  H01J37/32706 ,  H01J37/32733 ,  H01J37/34 ,  H01J37/3405

摘要： A method and apparatus that operates at a high pressure of at least one torr for improving sidewall coverage within trenches and vias in a substrate. The apparatus comprises a chamber enclosing a target and a pedestal, a process gas that provides a process gas in the chamber, a pump for maintaining the high pressure of at least about one torr in the chamber and a power source coupled to the target. Additionally, the distance between the target and the substrate is set to ensure that collisions between the sputtered particles and the plasma occur in the trenches and vias on the substrate. The method comprises the steps of providing a process gas into the chamber such that the gas pressure is at least about one torr, generating a plasma from the process gas, and sputtering material from the target.

摘要翻译： 一种在至少一个托的高压下操作以改善衬底中的沟槽和通孔内的侧壁覆盖的方法和装置。 该装置包括一个包围一个目标和一个基座的腔室，一个在腔室中提供一个处理气体的处理气体，一个保持室内至少约一托的高压的泵和一个耦合到目标的电源。 此外，靶和衬底之间的距离设定为确保溅射的粒子和等离子体之间的碰撞发生在衬底上的沟槽和通孔中。 该方法包括以下步骤：将工艺气体提供到室中，使得气体压力为至少约一乇，从工艺气体产生等离子体，以及从靶材溅射材料。

公开(公告)号：US06409890B1

公开(公告)日：2002-06-25

申请号：US09362917

申请日：1999-07-27

申请人： Howard E. Grunes ,  Zheng Xu ,  Praburam Gopalraja ,  John C. Forster ,  Ralf Hofmann ,  Anantha Subramani

发明人： Howard E. Grunes ,  Zheng Xu ,  Praburam Gopalraja ,  John C. Forster ,  Ralf Hofmann ,  Anantha Subramani

IPC分类号： C23C1435

CPC分类号： H01J37/321 ,  C23C14/044 ,  C23C14/358 ,  H01J37/3447

摘要： Embodiments include devices and methods for sputtering material onto a workpiece in a chamber which includes a plasma generation area and a target. A coil is positioned to inductively couple energy into the plasma generation area to generate a plasma. A body is positioned between the workpiece and the target to prevent an amount of target material from being sputtered onto the workpiece. The body prevents an amount of target material from being sputtered onto the workpiece. The body may act as a dark space shield and inhibit plasma formation between the body and the target. The body may also act as a physical shield to block sputtered material from accumulating on the workpiece.

摘要翻译： 实施例包括用于在包括等离子体产生区域和靶子的室中将材料溅射到工件上的装置和方法。 线圈被定位成将能量感应地耦合到等离子体产生区域中以产生等离子体。 主体位于工件和目标之间，以防止一定量的目标材料溅射到工件上。 该主体防止一定量的目标材料溅射到工件上。 身体可以作为暗空间屏蔽，并且抑制身体和目标之间的血浆形成。 主体还可以作为物理屏蔽来阻止溅射的材料积聚在工件上。

公开(公告)号：USD450070S1

公开(公告)日：2001-11-06

申请号：US29090618

申请日：1998-07-13

申请人： Praburam Gopalraja ,  Zheng Xu ,  Michael Rosenstein ,  John C. Forster

设计人： Praburam Gopalraja ,  Zheng Xu ,  Michael Rosenstein ,  John C. Forster

公开(公告)号：US06235169B1

公开(公告)日：2001-05-22

申请号：US08908342

申请日：1997-08-07

申请人： Praburam Gopalraja ,  John C. Forster ,  Zheng Xu ,  Bradley O. Stimson

发明人： Praburam Gopalraja ,  John C. Forster ,  Zheng Xu ,  Bradley O. Stimson

IPC分类号： C23C1434

CPC分类号： C23C14/345 ,  C23C14/35 ,  C23C14/358 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/34

摘要： In a plasma generating apparatus, RF energy applied to a coil positioned to sputter material onto a workpiece, is modulated to control the biasing of the coil. As a consequence, control of coil sputtering may be improved such that the uniformity of deposition may also be improved.

摘要翻译： 在等离子体发生装置中，被施加到定位成将材料溅射到工件上的线圈的RF能量被调制以控制线圈的偏置。 因此，可以提高线圈溅射的控制，从而也可以提高沉积的均匀性。

公开(公告)号：US06193855B1

公开(公告)日：2001-02-27

申请号：US09421431

申请日：1999-10-19

申请人： Praburam Gopalraja ,  John Forster

发明人： Praburam Gopalraja ,  John Forster

IPC分类号： C23C1434

CPC分类号： C23C14/345 ,  C23C14/046 ,  C23C14/358 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/3405 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76873

摘要： The present invention provides a method and apparatus for achieving conformal step coverage of one or more materials on a substrate using sputtered ionized material. A plasma is struck and maintained in a processing region by coupling energy into one or more gases. A target disposed in the processing region provides a source of material to be sputtered and then ionized in the plasma environment. During deposition of material onto the substrate, the plasma density is modulated by varying the energy supplied to the plasma. During a period of plasma decay, a bias to a substrate support member is increased to a relatively higher power to periodically enhance the attraction of positively charged particles to the substrate during the afterglow period of the plasma. In one embodiment, a bias to the target is also modulated.

摘要翻译： 本发明提供一种使用溅射电离材料在基板上实现一种或多种材料的适形步骤覆盖的方法和装置。 通过将能量耦合到一个或多个气体中，等离子体被撞击并保持在处理区域中。 设置在处理区域中的靶提供待溅射的材料源，然后在等离子体环境中电离。 在将材料沉积到衬底上时，通过改变供给到等离子体的能量来调制等离子体密度。 在等离子体衰减期间，在等离子体的余辉期间，向衬底支撑构件的偏压增加到相对较高的功率以周期性地增强带正电的微粒对衬底的吸引。 在一个实施例中，对目标的偏置也被调制。

公开(公告)号：US20070209925A1

公开(公告)日：2007-09-13

申请号：US11373643

申请日：2006-03-09

申请人： Xianmin Tang ,  Praburam Gopalraja ,  Jenn Wang ,  Jick Yu

发明人： Xianmin Tang ,  Praburam Gopalraja ,  Jenn Wang ,  Jick Yu

IPC分类号： C23C14/32

CPC分类号： C23C14/165 ,  C23C14/5873 ,  H01J37/321 ,  H01J37/3266 ,  H01J37/3408 ,  H01J2237/334 ,  H01L21/2855 ,  H01L21/32136 ,  H01L21/76844

摘要： A substrate processing method practiced in a plasma sputter reactor including an RF coil and two or more coaxial electromagnets, at least two of which are wound at different radii. After a barrier layer, for example, of tantalum is sputter deposited into a via hole, the RF coil is powered to cause argon sputter etching of the barrier layer and the current to the electromagnets are adjusted to steer the argon ions, for example to eliminate sidewall asymmetry. For example, the two electromagnets are powered with unequal currents of opposite polarities or a third electromagnet wrapped at a different height is powered. In one embodiment, the steering straightens the trajectories near the wafer edge. In another embodiment, the etching is divided into two steps in which the steering inclines the trajectories at opposite angles. The invention may also be applied to other materials, such as copper.

摘要翻译： 在包括RF线圈和两个或更多个同轴电磁体的等离子体溅射反应器中实施的衬底处理方法，其中至少两个以不同的半径缠绕。 在阻挡层之后，例如钽被溅射沉积到通孔中，RF线圈被供电以对阻挡层进行氩溅射蚀刻，并且调节到电磁体的电流以引导氩离子，例如以消除 侧壁不对称。 例如，两个电磁铁由具有相反极性的不相等的电流供电，或者以不同高度包装的第三电磁体被供电。 在一个实施例中，转向拉直晶片边缘附近的轨迹。 在另一个实施例中，蚀刻被分成两个步骤，其中操纵以相反的角度倾斜轨迹。 本发明也可以应用于其它材料，例如铜。

公开(公告)号：US20070059502A1

公开(公告)日：2007-03-15

申请号：US11511869

申请日：2006-08-29

申请人： Rongjun Wang ,  Hua Chung ,  Xianmin Tang ,  Jenn Wang ,  Wei Wang ,  Yoichiro Tanaka ,  Jick Yu ,  Praburam Gopalraja

发明人： Rongjun Wang ,  Hua Chung ,  Xianmin Tang ,  Jenn Wang ,  Wei Wang ,  Yoichiro Tanaka ,  Jick Yu ,  Praburam Gopalraja

IPC分类号： B32B7/00 ,  B32B3/00 ,  C23C16/00 ,  B05D5/12 ,  C23C14/00

CPC分类号： C23C14/046 ,  C23C14/0641 ,  C23C14/165 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76873 ,  H01L23/485 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/24917 ,  Y10T428/24926 ,  H01L2924/00

摘要： A fabrication method and a product for the deposition of a conductive barrier or other liner layer in a vertical electrical interconnect structure. One embodiment includes within a a hole through a dielectric layer a barrier layer of RuTaN, an adhesion layer of RuTa, and a copper seed layer forming a liner for electroplating of copper. The ruthenium content is preferably greater than 50 at % and more preferably at least 80 at % but less than 95 at %. The barrier and adhesion layers may both be sputter deposited. Other platinum-group elements substitute for the ruthenium and other refractory metals substitute for the tantalum. Aluminum alloying into RuTa when annealed presents a moisture barrier. Copper contacts include different alloying fractions of RuTa to shift the work function to the doping type.

摘要翻译： 用于在垂直电互连结构中沉积导电屏障或其它衬垫层的制造方法和产品。 一个实施方案包括通过电介质层的孔，RuTaN的阻挡层，RuTa的粘附层和形成铜电镀衬垫的铜籽晶层。 钌含量优选大于50原子％，更优选至少80原子％但小于95原子％。 阻挡层和粘附层可以被溅射沉积。 其他铂族元素代替钌和其他难熔金属代替钽。 当退火时铝合金化成RuTa呈现防潮层。 铜触点包括RuTa的不同合金分数，以将功函数转移到掺杂类型。

公开(公告)号：US20060070875A1

公开(公告)日：2006-04-06

申请号：US11229139

申请日：2005-09-15

申请人： Jaim Nulman ,  Sergio Edelstein ,  Mani Subramani ,  Zheng Xu ,  Howard Grunes ,  Avi Tepman ,  John Forster ,  Praburam Gopalraja

发明人： Jaim Nulman ,  Sergio Edelstein ,  Mani Subramani ,  Zheng Xu ,  Howard Grunes ,  Avi Tepman ,  John Forster ,  Praburam Gopalraja

IPC分类号： C23C14/00 ,  C25B11/00

CPC分类号： C23C14/34 ,  H01J37/321 ,  H01J37/34

摘要： A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

公开(公告)号：US06837975B2

公开(公告)日：2005-01-04

申请号：US10211473

申请日：2002-08-01

申请人： Wei D. Wang ,  Praburam Gopalraja

发明人： Wei D. Wang ,  Praburam Gopalraja

IPC分类号： C23C14/04 ,  C23C14/16 ,  C23C14/35 ,  H01J37/34 ,  H01L21/768

CPC分类号： H01J37/3455 ,  C23C14/046 ,  C23C14/165 ,  C23C14/35 ,  H01J37/3405 ,  H01L21/76877

摘要： A magnetron system for a sputtering target having an annular vault facing the wafer to be coated and having inner and outer sidewalls and a roof. A small magnetron is positioned over the roof. A first magnet assembly having a first magnet polarity along the target axis is positioned behind the inner sidewall. A second magnet assembly having an opposed second opposed magnetic polarity is disposed in back of the outer sidewall and has magnetic strength much greater than the first magnet assembly but its strength is asymmetrically distributed about the target axis. The second magnet assembly and the roof assembly are rotated together about the target axis. The rotating asymmetric sidewall magnet assembly may also be used with a hollow-cathode target, with or without a roof magnetron.

摘要翻译： 一种用于溅射靶的磁控管系统，其具有面向待涂覆的晶片的环形拱顶并具有内侧壁和外侧壁以及屋顶。 一个小磁控管位于屋顶上。 沿着目标轴线具有第一磁体极性的第一磁体组件位于内侧壁的后面。 具有相对的第二相对磁极性的第二磁体组件设置在外侧壁的后部，并且具有比第一磁体组件大得多的磁强度，但是其强度围绕目标轴线不对称地分布。 第二磁体组件和屋顶组件围绕目标轴线一起旋转。 旋转的不对称侧壁磁体组件也可以与具有或不具有屋顶磁控管的中空阴极靶一起使用。