MASK MANAGEMENT SYSTEM AND METHOD FOR OLED ENCAPSULATION
    51.
    发明申请
    MASK MANAGEMENT SYSTEM AND METHOD FOR OLED ENCAPSULATION 有权
    用于OLED封装的掩模管理系统和方法

    公开(公告)号:US20140170785A1

    公开(公告)日:2014-06-19

    申请号:US14126211

    申请日:2012-06-18

    IPC分类号: H01L51/56

    CPC分类号: H01L51/56 C23C16/042

    摘要: A system and method for encapsulating an organic light-emitting diode (OLED) device by enabling a substrate and a plurality of masks to be efficiently received into a vacuum processing environment, transferred between one or more process chambers for the deposition of encapsulating layers, and removed from the processing system. A method of encapsulating an organic light-emitting diode (OLED) device includes positioning one or more masks over a substrate to deposit encapsulating layers on an OLED device disposed on the substrate. A processing system for encapsulating an organic light-emitting diode (OLED) device includes one or more transfer chambers, one or more load lock chambers coupled to each transfer chamber and operable to receive a mask into a vacuum environment, and one or more process chambers coupled to each transfer chamber and operable to deposit an encapsulating layer on a substrate.

    摘要翻译: 一种用于封装有机发光二极管(OLED)器件的系统和方法,其通过使衬底和多个掩模能够被有效地接收到真空处理环境中,在一个或多个用于沉积封装层的处理室之间传送的真空处理环境中,以及 从处理系统中删除。 封装有机发光二极管(OLED)器件的方法包括将一个或多个掩模定位在衬底上以将封装层沉积在设置在衬底上的OLED器件上。 用于封装有机发光二极管(OLED)器件的处理系统包括一个或多个传送室,耦合到每个传送室的一个或多个负载锁定室,并可操作以将掩模接收到真空环境中,以及一个或多个处理室 耦合到每个传送室并可操作以将封装层沉积在衬底上。

    METHOD AND APPARATUS FOR SELECTIVE SUBSTRATE SUPPORT AND ALIGNMENT IN A THERMAL TREATMENT CHAMBER
    53.
    发明申请
    METHOD AND APPARATUS FOR SELECTIVE SUBSTRATE SUPPORT AND ALIGNMENT IN A THERMAL TREATMENT CHAMBER 审中-公开
    在热处理室中选择性基板支撑和对准的方法和装置

    公开(公告)号:US20120251964A1

    公开(公告)日:2012-10-04

    申请号:US13284815

    申请日:2011-10-28

    IPC分类号: F27D3/12 F27D3/00

    摘要: The present invention generally relates to methods and apparatus for handling of substrates in a thermal treatment chamber. In one embodiment, an apparatus is provided. The apparatus includes a chamber body having sidewalls, a substrate support assembly disposed in the chamber body, the substrate support assembly movable in a first direction within the chamber body, and two or more support fingers coupled to the sidewalls, the two or more support fingers being movable in a second direction within the chamber body, the second direction being transverse to the first direction.

    摘要翻译: 本发明一般涉及用于处理热处理室中的衬底的方法和设备。 在一个实施例中,提供了一种装置。 该装置包括具有侧壁的室主体,设置在室主体中的基板支撑组件,可在室主体内沿第一方向移动的基板支撑组件以及联接到侧壁的两个或多个支撑指,两个或多个支撑指 可在腔体内沿第二方向移动,第二方向横向于第一方向。

    Plasma uniformity control by gas diffuser hole design
    55.
    发明授权
    Plasma uniformity control by gas diffuser hole design 有权
    通过气体扩散器孔设计的等离子体均匀性控制

    公开(公告)号:US08083853B2

    公开(公告)日:2011-12-27

    申请号:US10889683

    申请日:2004-07-12

    摘要: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

    摘要翻译: 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板,以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔,以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度,直径,表面积和密度可以从扩散板的中心到边缘逐渐增加,以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径,深度和表面积的增加可以通过向下游侧弯曲扩散板,然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径,深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加,深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

    Electronic device manufacturing chamber method
    57.
    发明授权
    Electronic device manufacturing chamber method 有权
    电子装置制造室法

    公开(公告)号:US07784164B2

    公开(公告)日:2010-08-31

    申请号:US11214475

    申请日:2005-08-29

    IPC分类号: B23P11/00

    摘要: A non-polygon shaped, multi-piece chamber is provided. A non-polygon shaped, multi-piece chamber may include (1) a central piece having a first side and a second side, (2) a first side piece adapted to couple with the first side of the central piece, and (3) a second side piece adapted to couple with the second side of the central piece. The central piece, the first side piece, and the second side piece form a cylindrical overall shape when coupled together. Numerous other aspects are provided.

    摘要翻译: 提供非多边形形状的多片式室。 非多边形多片式室可以包括(1)具有第一侧和第二侧的中心件,(2)适于与中心件的第一侧连接的第一侧件,以及(3) 适于与中心件的第二侧联接的第二侧件。 当连接在一起时,中心件,第一侧件和第二侧件形成圆柱形的整体形状。 提供了许多其他方面。

    Multiple Slot Load Lock Chamber and Method of Operation
    58.
    发明申请
    Multiple Slot Load Lock Chamber and Method of Operation 有权
    多槽负载锁定室和操作方法

    公开(公告)号:US20100139889A1

    公开(公告)日:2010-06-10

    申请号:US12709713

    申请日:2010-02-22

    IPC分类号: H01L21/677 F28F13/00

    摘要: Embodiments of the invention include a load lock chamber, a processing system having a load lock chamber and a method for transferring substrates between atmospheric and vacuum environments. In one embodiment, the method includes maintaining a processed substrate within a transfer cavity formed in a chamber body for two venting cycles. In another embodiment, the method includes transferring a substrate from a transfer cavity to a heating cavity formed in the chamber body, and heating the substrate in the heating cavity. In another embodiment, a load lock chamber includes a chamber body having substrate support disposed in a transfer cavity. The substrate support is movable between a first elevation and a second elevation. A plurality of grooves are formed in at least one of a ceiling or floor of the transfer cavity and configured to receive at least a portion of the substrate support when located in the second elevation.

    摘要翻译: 本发明的实施例包括负载锁定室,具有负载锁定室的处理系统和用于在大气和真空环境之间传送衬底的方法。 在一个实施例中,该方法包括将经处理的基板保持在形成在室主体中的传送空腔内用于两个排气循环。 在另一个实施例中,该方法包括将基底从传递腔转移到形成在腔体中的加热腔,以及加热加热腔中的基底。 在另一个实施例中,负载锁定室包括具有设置在传送腔中的衬底支撑件的室主体。 衬底支撑件可在第一高度和第二高度之间移动。 多个槽形成在传送腔的天花板或地板中的至少一个中,并且被配置为当位于第二高度时容纳衬底支撑件的至少一部分。

    SLIT VALVE CONTROL
    59.
    发明申请
    SLIT VALVE CONTROL 有权
    滑阀控制

    公开(公告)号:US20100051111A1

    公开(公告)日:2010-03-04

    申请号:US12538237

    申请日:2009-08-10

    IPC分类号: F15D1/00 F16K3/00

    摘要: Embodiments disclosed herein generally relate to methods for sealing a processing chamber with a slit valve door. The door initially raises from a position below the opening for the processing chamber to a raised position. The door then expands until an O-ring that is on the door just touches the sealing surface. Then, the door expands again to compress the O-ring against the sealing surface. The door expands by flowing a gas into the interior volume of the door. By controlling the pressure buildup within the door, the speed with which the door expands is controlled to ensure that the door gently contacts the sealing surface and then compresses against the sealing surface. Thus, the door may be prevented from contacting the sealing surface with too great a force that may jolt or shake the processing chamber and produce undesired particles that may contaminate the process.

    摘要翻译: 本文公开的实施例通常涉及用狭缝阀门密封处理室的方法。 门最初从处理室的开口下方的位置升高到升高位置。 门然后膨胀,直到门上的O形圈刚好碰到密封面。 然后,门再次膨胀以将O形环压靠在密封表面上。 通过将气体流入门的内部空间来扩大门。 通过控制门内的压力积分,控制门膨胀的速度,以确保门轻轻地接触密封表面,然后压靠密封表面。 因此,可以防止门用太大的力使密封表面接触,该力可能使处理室震动或摇晃并产生可能污染该过程的不期望的颗粒。

    DYNAMIC SCRIBE ALIGNMENT FOR LASER SCRIBING, WELDING OR ANY PATTERNING SYSTEM
    60.
    发明申请
    DYNAMIC SCRIBE ALIGNMENT FOR LASER SCRIBING, WELDING OR ANY PATTERNING SYSTEM 审中-公开
    用于激光切割,焊接或任何绘图系统的动态筛选对准

    公开(公告)号:US20090321399A1

    公开(公告)日:2009-12-31

    申请号:US12422208

    申请日:2009-04-10

    IPC分类号: B23K26/38

    摘要: Methods and systems for improving the alignment between a previously formed feature and a subsequently formed feature are provided. An exemplary method can include laser scribing a workpiece (104, 550) having a previously formed first feature. The exemplary method includes imaging the workpiece (104, 550) with an imaging device (320, 420, 554, 640) so as to capture a plurality of positions of the first feature on the workpiece (104, 550) relative to the laser-scribing device (100). The exemplary method further includes using the captured positions to align output from the laser-scribing device (100) in order to form a second feature on the workpiece (104, 550) at a controlled distance from the first feature.

    摘要翻译: 提供了用于改善先前形成的特征与随后形成的特征之间的对准的方法和系统。 示例性的方法可以包括激光划刻具有先前形成的第一特征的工件(104,550)。 该示例性方法包括用成像装置(320,420,554,640)对工件(104,550)进行成像,以便相对于激光打印机捕获工件(104,550)上的第一特征的多个位置, 划线装置(100)。 该示例性方法还包括使用所捕获的位置来对齐来自激光划线装置(100)的输出,以便在距离第一特征的受控距离处在工件(104,550)上形成第二特征。