ATOMIC LAYER DEPOSITION OF TUNGSTEN MATERIALS
    53.
    发明申请
    ATOMIC LAYER DEPOSITION OF TUNGSTEN MATERIALS 有权
    原子层沉积材料

    公开(公告)号:US20090053893A1

    公开(公告)日:2009-02-26

    申请号:US12121209

    申请日:2008-05-15

    IPC分类号: H01L21/44

    摘要: Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes, such as atomic layer deposition (ALD) to provide tungsten films having significantly improved surface uniformity and production level throughput. In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate within a process chamber, wherein the substrate contains an underlayer disposed thereon, exposing the substrate sequentially to a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the underlayer during an ALD process, wherein the reducing gas contains a hydrogen/hydride flow rate ratio of about 40:1, 100:1, 500:1, 800:1, 1,000:1, or greater, and depositing a tungsten bulk layer on the tungsten nucleation layer. The reducing gas contains a hydride compound, such as diborane, silane, or disilane.

    摘要翻译: 本发明的实施方案提供了一种用于沉积含钨材料的改进方法。 该方法利用诸如原子层沉积(ALD)的浸泡工艺和气相沉积工艺来提供具有显着改善的表面均匀性和生产水平生产量的钨膜。 在一个实施例中,提供了一种用于在衬底上形成含钨材料的方法,其包括将衬底定位在处理室内,其中衬底包含设置在其上的底层,将衬底依次暴露于钨前体和还原气体 在ALD工艺期间,在底层上沉积钨成核层,其中还原气体含有约40:1,100:1,500:1,800:1,1,000:1或更高的氢氢化物流速比, 以及在钨成核层上沉积钨体层。 还原气体含有氢化物化合物,例如乙硼烷,硅烷或乙硅烷。

    Surface improvement method in fabricating high temperature superconductor devices
    56.
    发明申请
    Surface improvement method in fabricating high temperature superconductor devices 审中-公开
    制造高温超导体器件的表面改性方法

    公开(公告)号:US20060172892A1

    公开(公告)日:2006-08-03

    申请号:US10541296

    申请日:2003-07-24

    IPC分类号: H01L39/24

    CPC分类号: H01L39/2461 H01L39/2464

    摘要: A method of surface modification in fabricating High Temperature Superconducting devices, characterized in that bombarding the preformed material surface with a particle beam having energy, to improve the smoothness of the material surface and change the microstructure or internal defects of the processed material, wherein the energy of the particle beam is in the range of 5 ev to 50000 ev, and the incidence angle is in the range of 5 degree to 85 degree. In some cases, in order to achieve the desired superconductivity, the bombarded sample is annealed, and the annealing temperature is in the range of 100° C. to 1500° C. The present invention can improve the surface smoothness of the processed material, reduce the surface defect, change the microstructure of the material, and thereby improve the superconductivity of the whole device. The bombarded material comprises a substrate, a transition layer, superconducting layer or any combination of them during the process of the fabrication of the superconducting devices.

    摘要翻译: 一种在制造高温超导装置中的表面改性的方法,其特征在于用具有能量的粒子束轰击预成型材料表面,以改善材料表面的平滑度并改变加工材料的微观结构或内部缺陷,其中能量 的粒子束在5ev〜50000ev的范围内,入射角在5度〜85度的范围内。 在某些情况下,为了达到所需的超导性,对被轰击的样品进行退火,退火温度在100℃至1500℃的范围内。本发明可以提高加工材料的表面平滑度,减少 表面缺陷,改变材料的微结构,从而提高整个器件的超导性。 在制造超导装置的过程中,被轰击的材料包括衬底,过渡层,超导层或它们的任何组合。

    Head arm assembly and disk drive device with the head arm assembly having enhanced impact resistance
    57.
    发明授权
    Head arm assembly and disk drive device with the head arm assembly having enhanced impact resistance 失效
    头臂组件和磁盘驱动装置,头臂组件具有增强的抗冲击性

    公开(公告)号:US06963473B2

    公开(公告)日:2005-11-08

    申请号:US10600435

    申请日:2003-06-23

    CPC分类号: G11B5/6005 G11B5/4826

    摘要: A head arm assembly (HAA) includes a head slider having at least one head element, an arm member for supporting the head slider at one end section, an actuator, mounted to the other end section of the arm member, for rotationally moving the arm member in a direction substantially parallel with a recording medium surface around an axis for horizontal rotation of the arm member, and a load generation unit for generating a load for energizing the head slider in a direction to the recording medium surface by rotationally moving the arm member in a direction substantially orthogonal to the recording medium surface around an axis for vertical rotation. The position of the center of gravity of the HAA is located at a different position from the axis for vertical rotation on a center axis of the arm member.

    摘要翻译: 头臂组件(HAA)包括具有至少一个头部元件的头部滑动器,用于在一个端部处支撑头部滑块的臂部件,安装到臂部件的另一端部的致动器,用于旋转地移动臂 构件,其基本上平行于围绕用于臂构件的水平旋转的轴线的记录介质表面的方向;以及负载产生单元,用于产生用于通过旋转地移动臂构件来产生朝向记录介质表面的方向对头滑块的通电的负载 在与用于垂直旋转的轴线周围的记录介质表面基本正交的方向上。 HAA的重心位置位于与轴构件的中心轴线垂直旋转的轴的不同位置。

    Chemically induced optical signals and DNA sequencing

    公开(公告)号:US09671558B2

    公开(公告)日:2017-06-06

    申请号:US12459309

    申请日:2009-06-30

    IPC分类号: C12Q1/68 G02B6/122

    摘要: Methods for sequencing nucleic acids are presented. Sequencing is accomplished through the chemical amplification of the products of DNA synthesis and the detection of the chemically amplified products. In embodiments of the invention, a substrate is provided having a plurality of molecules of DNA to be sequenced attached and a plurality of molecules capable of chelating pyrophosphate ions attached, the DNA molecules to be sequenced are primed, and a next complementary nucleotide is incorporated and excised a plurality of times leading to the buildup of pyrophosphate ions locally around the DNA molecule to be sequenced. Pyrophosphate ions are captured by the substrate-attached chelators and optically detected to determine the identity of the next complementary nucleic acid in the DNA molecule to be sequenced.

    Substrate carrier for molding electronic devices
    60.
    发明授权
    Substrate carrier for molding electronic devices 有权
    用于成型电子器件的基板载体

    公开(公告)号:US09199396B2

    公开(公告)日:2015-12-01

    申请号:US12836645

    申请日:2010-07-15

    IPC分类号: B29C45/14 B29C45/40 B29L11/00

    摘要: A method of molding a substrate containing a plurality of electronic devices by providing a carrier comprising a frame which includes an adhesive film. The substrate is mounted onto the adhesive film of the carrier such that the frame surrounds the substrate. The carrier is placed in a mold such that the frame is located at a clamping area of the mold and the substrate is located at a molding area of the mold where molding cavities are located. The frame is clamped at the clamping area while the electronic devices are located in the molding cavities for molding with an encapsulant.

    摘要翻译: 一种通过提供包括包括粘合剂膜的框架的载体来模制包含多个电子装置的基板的方法。 将基板安装在载体的粘合膜上,使得框架围绕基板。 将载体放置在模具中,使得框架位于模具的夹紧区域,并且基板位于模制空腔所在的模具的模制区域。 框架被夹紧在夹紧区域,而电子设备位于模制空腔中以用密封剂成型。