公开(公告)号：US09871499B2

公开(公告)日：2018-01-16

申请号：US14554943

申请日：2014-11-26

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H03H7/01 ,  H03H7/40 ,  H01F17/00 ,  H03F1/56 ,  H03F3/24 ,  H03H7/38

CPC classification number: H03H7/0161 ,  H01F17/0013 ,  H03F1/565 ,  H03F3/245 ,  H03F2200/546 ,  H03H7/0115 ,  H03H7/1708 ,  H03H7/1716 ,  H03H7/1766 ,  H03H7/1775 ,  H03H7/40 ,  H03H2007/386

Abstract: Radio frequency (RF) filter structures and related methods and RF front-end circuitry are disclosed. In one embodiment, an RF filter structure includes a first terminal and a first tunable RF filter path defined between the first terminal and a second terminal. The first tunable RF filter path is tunable to provide impedance matching between the first terminal and the second terminal at a first frequency. The first frequency may be provided within a first frequency band. Additionally, the RF filter structure includes a second tunable RF filter path defined between the first terminal and the second terminal. The second tunable RF filter path is tunable to provide impedance matching between the first terminal and the second terminal at a second frequency. The second frequency may be within a second frequency band. In this manner, the RF filter structure is configured to provide impedance tuning for multiple impedance bands simultaneously.

公开(公告)号：US09859863B2

公开(公告)日：2018-01-02

申请号：US14554975

申请日：2014-11-26

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H03H7/01 ,  H03H7/46 ,  H03H7/09 ,  H01F17/00 ,  H03F3/195 ,  H03F3/24 ,  H03F3/68

CPC classification number: H03H7/0161 ,  H01F17/0013 ,  H03F3/195 ,  H03F3/245 ,  H03F3/68 ,  H03F2200/168 ,  H03F2200/546 ,  H03H7/0115 ,  H03H7/0153 ,  H03H7/09 ,  H03H7/463

Abstract: Radio frequency (RF) front-end circuitry that includes control circuitry and an RF filter structure that includes a plurality of resonators are disclosed. In one embodiment, a first tunable RF filter path is defined by a first set of the plurality of resonators such that the first tunable RF filter path has a first amplitude and a first phase. A second tunable RF filter path is defined by a second set of the plurality of resonators such that the second tunable RF filter path has a second amplitude and a second phase. To provide antenna diversity and/or beam forming/beam steering, the control circuitry is configured to set a first amplitude difference between the first amplitude and the second amplitude to approximately a first target amplitude difference and set a first phase difference between the first phase and the second phase to approximately a first target phase difference.

公开(公告)号：US09825656B2

公开(公告)日：2017-11-21

申请号：US14450204

申请日：2014-08-01

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H04B1/04 ,  H03F3/24 ,  H04B1/16 ,  H03F3/19 ,  H03F1/56 ,  H03F3/193 ,  H03F3/68 ,  H03F3/72 ,  H03H7/09 ,  H03H7/01

CPC classification number: H04B1/0475 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/09 ,  H03H7/1775 ,  H03H2210/025 ,  H04B1/0458

Abstract: RF communications circuitry, which includes a first tunable RF filter and an RF power amplifier (PA), is disclosed. The first tunable RF filter includes a pair of weakly coupled resonators, and receives and filters a first upstream RF signal to provide a first filtered RF signal. The RF PA is coupled to the first tunable RF filter, and receives and amplifies an RF input signal to provide an RF output signal.

公开(公告)号：US09824951B2

公开(公告)日：2017-11-21

申请号：US14851652

申请日：2015-09-11

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  Julio C. Costa ,  Baker Scott

IPC: H01L23/31 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/56 ,  H01L21/683 ,  H01L21/762 ,  H01L23/29 ,  H01L23/367 ,  H01L23/373

CPC classification number: H01L23/3135 ,  H01L21/0217 ,  H01L21/31055 ,  H01L21/31111 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/762 ,  H01L21/76264 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3128 ,  H01L23/367 ,  H01L23/3737 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2224/16238 ,  H01L2224/73253 ,  H01L2224/81801 ,  H01L2224/97 ,  H01L2924/15174 ,  H01L2924/15313 ,  H01L2924/18161 ,  H01L2224/81 ,  H01L2924/00014

Abstract: A printed circuit module and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and a buried oxide (BOX) layer over the at least one device layer. A polymer layer is disposed over the BOX layer, wherein the polymer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 103 Ohm-cm.

公开(公告)号：US09787270B2

公开(公告)日：2017-10-10

申请号：US14554681

申请日：2014-11-26

Applicant: RF Micro Devices, Inc.

Inventor： Baker Scott ,  George Maxim ,  Dirk Robert Walter Leipold

IPC: H03F1/52 ,  H03G3/30 ,  H03F1/02 ,  H03F3/19 ,  H04B1/04 ,  H03F1/32 ,  H03F3/68 ,  H03F1/22 ,  H03F1/56 ,  H03F3/45 ,  H03F3/193

CPC classification number: H03G3/3036 ,  H03F1/0211 ,  H03F1/0272 ,  H03F1/223 ,  H03F1/32 ,  H03F1/523 ,  H03F1/565 ,  H03F3/19 ,  H03F3/193 ,  H03F3/24 ,  H03F3/45179 ,  H03F3/45394 ,  H03F3/68 ,  H03F2200/324 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/471 ,  H03F2201/3236 ,  H03G3/3042 ,  H04B1/0475 ,  H04B2001/0408 ,  H04B2001/0416 ,  H04B2001/0425

Abstract: A power amplifier includes an amplifier element and overstress management circuitry coupled to the amplifier element. The overstress management circuitry is configured to detect an overstress condition of the amplifier element and adjust one or more operating parameters of the amplifier element in response to the detection of an overstress condition of the amplifier element. Using the overstress management circuitry prevents damage to the amplifier element that may occur due to uncorrected overstress conditions which may degrade or destroy a gate oxide of the amplifier element. Accordingly, the longevity of the amplifier element is improved.

公开(公告)号：US09774311B2

公开(公告)日：2017-09-26

申请号：US14555371

申请日：2014-11-26

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Baker Scott ,  Dirk Robert Walter Leipold

IPC: H03H7/01 ,  H03H7/09 ,  H01F17/00 ,  H03F1/56 ,  H03F3/195 ,  H03F3/24 ,  H03F3/68 ,  H03H7/46

CPC classification number: H03H7/0161 ,  H01F17/0013 ,  H03F1/56 ,  H03F3/195 ,  H03F3/245 ,  H03F3/68 ,  H03F2200/111 ,  H03F2200/294 ,  H03F2200/387 ,  H03F2200/411 ,  H03F2200/429 ,  H03F2200/546 ,  H03H7/0115 ,  H03H7/0153 ,  H03H7/09 ,  H03H7/463

Abstract: RF communications circuitry, which includes a first RF filter structure and RF detection circuitry, is disclosed. The first RF filter structure includes a first group of RF resonators, which include a first pair of weakly coupled RF resonators coupled to a signal path of a first RF signal. One of the first group of RF resonators provides a first sampled RF signal. The RF detection circuitry detects the first sampled RF signal to provide a first detected signal. The first RF filter structure adjusts a first filtering characteristic of the first RF filter structure based on the first detected signal.

公开(公告)号：US09742374B2

公开(公告)日：2017-08-22

申请号：US14555371

申请日：2014-11-26

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Baker Scott ,  Dirk Robert Walter Leipold

IPC: H03H7/01 ,  H03H7/09 ,  H01F17/00 ,  H03F1/56 ,  H03F3/195 ,  H03F3/24 ,  H03F3/68 ,  H03H7/46

Abstract: RF communications circuitry, which includes a first RF filter structure and RF detection circuitry, is disclosed. The first RF filter structure includes a first group of RF resonators, which include a first pair of weakly coupled RF resonators coupled to a signal path of a first RF signal. One of the first group of RF resonators provides a first sampled RF signal. The RF detection circuitry detects the first sampled RF signal to provide a first detected signal. The first RF filter structure adjusts a first filtering characteristic of the first RF filter structure based on the first detected signal.

公开(公告)号：US09705463B2

公开(公告)日：2017-07-11

申请号：US14554774

申请日：2014-11-26

Applicant: RF Micro Devices, Inc.

Inventor： Baker Scott ,  George Maxim ,  Dirk Robert Walter Leipold

IPC: H03F3/30 ,  H03F1/02 ,  H03F3/21 ,  H03F3/19 ,  H03G3/30 ,  H03F1/52 ,  H04B1/04 ,  H03F1/32 ,  H03F3/68 ,  H03F1/22 ,  H03F1/56 ,  H03F3/45 ,  H03F3/193

CPC classification number: H03G3/3036 ,  H03F1/0211 ,  H03F1/0272 ,  H03F1/223 ,  H03F1/32 ,  H03F1/523 ,  H03F1/565 ,  H03F3/19 ,  H03F3/193 ,  H03F3/24 ,  H03F3/45179 ,  H03F3/45394 ,  H03F3/68 ,  H03F2200/324 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/471 ,  H03F2201/3236 ,  H03G3/3042 ,  H04B1/0475 ,  H04B2001/0408 ,  H04B2001/0416 ,  H04B2001/0425

Abstract: Radio frequency power amplifier circuitry includes an amplifier element, power supply modulation circuitry, and bias modulation circuitry. The amplifier element is configured to amplify an RF input signal using a modulated power supply signal and a modulated bias signal to produce an RF output signal. The power supply modulation circuitry is coupled to the amplifier element and configured to provide the modulated power supply signal. The bias modulation circuitry is coupled to the amplifier element and the power supply modulation circuitry and configured to receive the modulated power supply signal and provide the modulated bias signal. Notably, the modulated bias signal is a function of the modulated power supply signal such that the modulated bias signal is configured to maintain a small signal gain of the amplifier element and the phase of the RF input signal at a constant value as the modulated power supply signal changes.

公开(公告)号：US09525395B2

公开(公告)日：2016-12-20

申请号：US14298852

申请日：2014-06-06

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H03H7/01 ,  H03H7/46 ,  H03F3/193 ,  H04B1/10 ,  H03F1/56 ,  H03F3/24 ,  H03F3/68 ,  H03F3/72 ,  H04B1/18 ,  H03H7/09

Abstract: RF communications circuitry, which includes a first RF filter structure and control circuitry, is disclosed. The first RF filter structure includes a pair of weakly coupled resonators and a first tunable RF filter. The control circuitry provides a first filter control signal. The first tunable RF filter receives and filters an upstream RF signal to provide a first filtered RF signal, such that a center frequency of the first tunable RF filter is based on the first filter control signal.

公开(公告)号：US09479118B2

公开(公告)日：2016-10-25

申请号：US14254215

申请日：2014-04-16

Applicant: RF Micro Devices, Inc.

Inventor： Nadim Khlat ,  Baker Scott ,  Michael R. Kay

IPC: H03G3/20 ,  H03F1/02 ,  H03F3/195 ,  H03F3/24

CPC classification number: H03F1/0227 ,  H03F1/0266 ,  H03F3/19 ,  H03F3/195 ,  H03F3/245 ,  H03F2200/432 ,  H03F2200/451 ,  H03F2200/555

Abstract: Power supply circuitry, which includes a parallel amplifier and a parallel amplifier power supply, is disclosed. The power supply circuitry operates in either an average power tracking mode or an envelope tracking mode. The parallel amplifier power supply provides a parallel amplifier power supply signal. The parallel amplifier regulates an envelope power supply voltage based on an envelope power supply control signal using the parallel amplifier power supply signal, which provides power for amplification. During the envelope tracking mode, the envelope power supply voltage at least partially tracks an envelope of an RF transmit signal and the parallel amplifier power supply signal at least partially tracks the envelope power supply control signal. During the average power tracking mode, the envelope power supply voltage does not track the envelope of the RF transmit signal.

Abstract translation: 公开了包括并联放大器和并行放大器电源的电源电路。 电源电路在平均功率跟踪模式或包络跟踪模式下工作。 并联放大器电源提供并联放大器电源信号。 并联放大器基于包络电源控制信号，使用并联放大器电源信号来调节包络电源电压，该信号提供放大功率。 在包络跟踪模式期间，信封电源电压至少部分地跟踪RF发射信号的包络，并且并行放大器电源信号至少部分地跟踪包络电源控制信号。 在平均功率跟踪模式期间，包络电源电压不跟踪RF发射信号的包络。