公开(公告)号：US11011549B2

公开(公告)日：2021-05-18

申请号：US16809980

申请日：2020-03-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshikazu Kondo ,  Hideyuki Kishida

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/45 ,  H01L27/32 ,  H01L29/24 ,  H01L29/49 ,  H01L21/02 ,  H01L21/477

Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.

公开(公告)号：US10700213B2

公开(公告)日：2020-06-30

申请号：US16353450

申请日：2019-03-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L21/02 ,  H01L27/12 ,  H01L29/66 ,  H01L29/08 ,  H01L29/24

Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

公开(公告)号：US10586811B2

公开(公告)日：2020-03-10

申请号：US16151552

申请日：2018-10-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshikazu Kondo ,  Hideyuki Kishida

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  H01L29/45 ,  H01L27/32 ,  H01L29/24 ,  H01L29/49 ,  H01L21/477

Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.

公开(公告)号：US10115831B2

公开(公告)日：2018-10-30

申请号：US15220532

申请日：2016-07-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC: H01L29/04 ,  H01L29/786 ,  H01L27/12 ,  H01L29/45

Abstract: In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphousness/non-crystals and microcrystals, where an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an n-type caused by entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented and a contact resistance with a source and drain electrodes can be reduced.

公开(公告)号：US09991396B2

公开(公告)日：2018-06-05

申请号：US15292530

申请日：2016-10-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L27/12 ,  H01L29/66 ,  H01L29/08 ,  H01L29/24 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

公开(公告)号：US09859306B2

公开(公告)日：2018-01-02

申请号：US15238010

申请日：2016-08-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshikazu Kondo ,  Hideyuki Kishida

IPC: H01L27/00 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/45 ,  H01L29/24 ,  H01L29/49 ,  H01L21/477 ,  H01L21/02

CPC classification number: H01L27/1225 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/477 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/45 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78663 ,  H01L29/78678 ,  H01L29/7869 ,  H01L29/78693

Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.

公开(公告)号：US09853167B2

公开(公告)日：2017-12-26

申请号：US15090937

申请日：2016-04-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC: H01L29/12 ,  H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L21/263 ,  H01L29/66 ,  H01L29/24 ,  H01L29/417

CPC classification number: H01L29/78696 ,  H01L21/2636 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/12 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

公开(公告)号：US09754784B2

公开(公告)日：2017-09-05

申请号：US15440427

申请日：2017-02-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Junichiro Sakata

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L21/477 ,  H01L29/24 ,  H01L27/12 ,  H01L27/32 ,  G02F1/1368 ,  G02F1/167

CPC classification number: H01L21/02554 ,  G02F1/1368 ,  G02F1/167 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02266 ,  H01L21/02422 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. The impurity concentration in the oxide semiconductor layer is reduced in the following manner: a silicon oxide layer including many defects typified by dangling bonds is formed in contact with the oxide semiconductor layer, and an impurity such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H2O) included in the oxide semiconductor layer is diffused into the silicon oxide layer. Further, a mixed region is provided between the oxide semiconductor layer and the silicon oxide layer. The mixed region includes oxygen, silicon, and at least one kind of metal element that is included in the oxide semiconductor.

公开(公告)号：US09496413B2

公开(公告)日：2016-11-15

申请号：US15053594

申请日：2016-02-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi Tsubuku ,  Yusuke Nonaka ,  Noritaka Ishihara ,  Masashi Oota ,  Hideyuki Kishida

IPC: H01L21/336 ,  H01L29/786 ,  H01L29/78 ,  H01L21/44 ,  H01L29/04 ,  H01L21/477 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/477 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78696

Abstract: Reducing hydrogen concentration in a channel formation region of an oxide semiconductor is important in stabilizing threshold voltage of a transistor including an oxide semiconductor and improving reliability. Hence, hydrogen is attracted from the oxide semiconductor and trapped in a region of an insulating film which overlaps with a source region and a drain region of the oxide semiconductor. Impurities such as argon, nitrogen, carbon, phosphorus, or boron are added to the region of the insulating film which overlaps with the source region and the drain region of the oxide semiconductor, thereby generating a defect. Hydrogen in the oxide semiconductor is attracted to the defect in the insulating film. The defect in the insulating film is stabilized by the presence of hydrogen.

公开(公告)号：US09450104B2

公开(公告)日：2016-09-20

申请号：US14920244

申请日：2015-10-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Shinji Ohno ,  Yuichi Sato ,  Masahiro Takahashi ,  Hideyuki Kishida

IPC: H01L29/04 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/78693 ,  H01L29/78696

Abstract: The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions.

Abstract translation: 半导体器件包括具有第一区域和一对第二区域的氧化物半导体膜，第一区域和第二区域彼此面对，其间设置有第一区域，氧化物半导体膜上的栅极绝缘膜和与第一区域重叠的第一电极， 栅极绝缘膜。 第一区域是包括c轴取向晶体部分的非单晶氧化物半导体区域。 所述一对第二区域是含有掺杂剂且包含多个晶体部分的氧化物半导体区域。