公开(公告)号：US08350301B2

公开(公告)日：2013-01-08

申请号：US12838444

申请日：2010-07-17

申请人： Makoto Miura ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

发明人： Makoto Miura ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

IPC分类号： H01L21/00

CPC分类号： H01L21/02639 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02532 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1124 ,  H01L31/1808 ,  Y02E10/547

摘要： A semiconductor photodiode includes a semiconductor substrate; a first conduction type first semiconductor layer formed above the semiconductor substrate; a high resistance second semiconductor layer formed above the first semiconductor layer; a first conduction type third semiconductor layer formed above the second semiconductor layer; and a second conduction type fourth semiconductor layer buried in the second semiconductor layer, in which the fourth semiconductor layer is separated at a predetermined distance in a direction horizontal to the surface of the semiconductor substrate.

摘要翻译： 半导体光电二极管包括半导体衬底; 形成在半导体衬底上的第一导电型第一半导体层; 形成在所述第一半导体层上方的高电阻第二半导体层; 形成在所述第二半导体层上方的第一导电型第三半导体层; 以及埋在第二半导体层中的第二导电型第四半导体层，其中第四半导体层在与半导体衬底的表面水平的方向上以预定距离分开。

公开(公告)号：US07992379B2

公开(公告)日：2011-08-09

申请号：US12176311

申请日：2008-07-18

申请人： Yasuko Suzuki ,  Hiroaki Fujita ,  Satoshi Hiranuma ,  Shinichi Saito ,  Yoshio Nakayama

发明人： Yasuko Suzuki ,  Hiroaki Fujita ,  Satoshi Hiranuma ,  Shinichi Saito ,  Yoshio Nakayama

IPC分类号： F01N3/36

CPC分类号： F01N3/2066 ,  F01N3/035 ,  F01N3/2892 ,  F01N13/008 ,  F01N13/009 ,  F01N2240/20 ,  F01N2560/06 ,  F01N2610/02 ,  Y02T10/24

摘要： An exhaust purification device for an engine comprises a catalytic device for purifying exhaust by using an additive, a deflecting device for allowing the exhaust to flow through and causing the exhaust to be agitated, upstream of the catalytic device, an additive injection device for injecting an additive, downstream of the deflecting device, a temperature detection device for detecting exhaust temperature, downstream of the deflecting device, and a control unit for controlling the additive injection device on the basis of the exhaust temperature detected by the temperature detection device. The temperature detection device has a temperature detection part located within a region where the exhaust having passed through the deflecting device has increased velocity.

摘要翻译： 用于发动机的排气净化装置包括用于通过使用添加剂净化排气的催化装置，用于使排气流过并使排气在催化装置上游被搅动的偏转装置，用于注入 添加剂，偏转装置的下游，用于检测排气温度的温度检测装置，偏转装置的下游，以及用于基于由温度检测装置检测出的排气温度来控制添加剂注入装置的控制单元。 温度检测装置具有温度检测部，位于通过偏转装置的排气具有增加的速度的区域内。

公开(公告)号：US20110088375A1

公开(公告)日：2011-04-21

申请号：US12920795

申请日：2009-03-24

申请人： Yasuko Suzuki ,  Hiroaki Fujita ,  Satoshi Hiranuma ,  Shinichi Saito

发明人： Yasuko Suzuki ,  Hiroaki Fujita ,  Satoshi Hiranuma ,  Shinichi Saito

IPC分类号： F01N3/24

CPC分类号： F01N3/0814 ,  B01D53/90 ,  B01D53/9431 ,  B01F3/04021 ,  B01F3/04049 ,  B01F5/0413 ,  B01F5/0426 ,  B01F5/0451 ,  B01F5/0646 ,  B01F5/0652 ,  F01N3/035 ,  F01N3/0842 ,  F01N3/106 ,  F01N13/009 ,  F01N13/0097 ,  F01N2240/20 ,  F01N2470/30 ,  F01N2610/02 ,  F01N2610/1453 ,  F02B37/00

摘要： Disclosed is an exhaust purification device for an internal combustion engine provided with a venturi-shaped mixing chamber (13) upstream of a NOx catalyst (16), said mixing chamber (13) formed continuously from a tapering part (13a) along which the radius decreases in the downstream direction, a waist part (13b) at which the radius is at smallest, and a widening part (13c) along which the radius increases in the downstream direction. A vane plate (18) and an aqueous urea solution spray nozzle (19) are arranged inside the tapering part (13a). The ratio (a/b) of the distance (a) between the vane plate (18) and the center of the waist part (13b) and the distance (b) between the center of the waist part (13b) and the mouth of the NOx catalyst (16) is set between 0.5 and 1.0.

摘要翻译： 公开了一种用于内燃机的排气净化装置，其在NOx催化剂（16）的上游设有文丘里状混合室（13），所述混合室（13）从锥形部分（13a）连续形成，半径 下游方向的下降，半径为最小的腰部（13b）和沿下游方向的半径增大的加宽部（13c）。 叶片板（18）和尿素水溶液喷雾喷嘴（19）布置在锥形部分（13a）的内部。 叶片板（18）与腰部（13b）的中心之间的距离（a）和腰部（13b）的中心与腰部（13b）的中心之间的距离（a）的比（a / b） NOx催化剂（16）设定在0.5〜1.0之间。

公开(公告)号：US07816702B2

公开(公告)日：2010-10-19

申请号：US12245077

申请日：2008-10-03

申请人： Shinichi Saito ,  Masahiro Aoki ,  Hiroyuki Uchiyama ,  Hideo Arimoto ,  Noriyuki Sakuma ,  Jiro Yamamoto

发明人： Shinichi Saito ,  Masahiro Aoki ,  Hiroyuki Uchiyama ,  Hideo Arimoto ,  Noriyuki Sakuma ,  Jiro Yamamoto

IPC分类号： H01L33/00

CPC分类号： H01S5/12 ,  B82Y20/00 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/1237 ,  H01S5/125 ,  H01S5/18341 ,  H01S5/3004 ,  H01S5/3427 ,  H01S2301/176 ,  H01S2302/00

摘要： There are a silicon laser device having a IV-group semiconductor such as silicon or germanium equivalent to the silicon as a basic constituent element on a substrate made of the silicon, and the like by a method capable of easily forming the silicon laser device by using a general silicon process, and a manufacturing method thereof. The silicon laser device is an ultrathin silicon laser that includes a first electrode unit injecting electrons, a second electrode unit injecting holes, a light emitting unit electrically connected to the first electrode unit and the second electrode unit, wherein the light emitting unit is made of single-crystal silicon and has a first surface (top surface) and a second surface (bottom surface) opposed to the first surface, a waveguide made of a first dielectric, which is disposed in the vicinity of the light emitting unit, by setting surface directions of the first and second surfaces as a surface (100) and thinning a thickness of the light emitting unit in a direction perpendicular to the first and second surfaces, and a mirror formed by alternately adjoining the first dielectric and a second dielectric.

摘要翻译： 存在具有诸如硅等离子体的硅组合半导体的硅激光器装置，其等同于由硅制成的衬底上作为基本构成元件的硅等，通过使用能够容易地形成硅激光器件的方法， 通用硅工艺及其制造方法。 硅激光器件是一种超薄硅激光器，其包括注入电子的第一电极单元，注入空穴的第二电极单元，与第一电极单元和第二电极单元电连接的发光单元，其中发光单元由 单晶硅，并且具有与第一表面相对的第一表面（顶表面）和第二表面（底表面），通过设置在发光单元附近的由第一电介质制成的波导 第一表面和第二表面的方向作为表面（100），并且在垂直于第一和第二表面的方向上减薄发光单元的厚度，以及通过交替地邻接第一电介质和第二电介质而形成的反射镜。

公开(公告)号：US07595662B2

公开(公告)日：2009-09-29

申请号：US11879933

申请日：2007-07-19

申请人： Shinichi Saito

发明人： Shinichi Saito

IPC分类号： H03K19/0175 ,  H03K19/20 ,  H03K19/094

CPC分类号： H03K17/0414 ,  H03K17/687 ,  H03K19/01707 ,  H04L25/0272 ,  H04L25/0282

摘要： A transmission device transmits differential signals that are to be output, in the form of current signals via first and second output terminals. A first switching transistor and a first output transistor are serially connected between the grounded terminal, which is set to a fixed electric potential, and the first output terminal. A second switching transistor and a second output transistor are serially connected between the grounded terminal and the second output terminal. First and second bias transistors are provided in parallel with the first and second switching transistors, and generate a predetermined bias current. A pair of differential signals, which are to be transmitted, are input to the gates of the first and second switching transistors. The gates of the first and second output transistors are biased at a predetermined first voltage.

摘要翻译： 发送装置经由第一和第二输出端子以电流信号的形式发送要输出的差分信号。 第一开关晶体管和第一输出晶体管串联连接在被设置为固定电位的接地端子与第一输出端子之间。 第二开关晶体管和第二输出晶体管串联连接在接地端子和第二输出端子之间。 第一和第二偏置晶体管与第一和第二开关晶体管并联提供，并产生预定的偏置电流。 要发送的一对差分信号被输入到第一和第二开关晶体管的栅极。 第一和第二输出晶体管的栅极被偏置在预定的第一电压。

公开(公告)号：US07497078B2

公开(公告)日：2009-03-03

申请号：US10531329

申请日：2003-10-16

申请人： Satoshi Hiranuma ,  Ritsuko Shinozaki ,  Yoshinori Takahashi ,  Yoshinaka Takeda ,  Reiko Doumeki ,  Shinichi Saito ,  Toru Kawatani ,  Takeshi Hashizume ,  Kenji Kawai

发明人： Satoshi Hiranuma ,  Ritsuko Shinozaki ,  Yoshinori Takahashi ,  Yoshinaka Takeda ,  Reiko Doumeki ,  Shinichi Saito ,  Toru Kawatani ,  Takeshi Hashizume ,  Kenji Kawai

IPC分类号： F01N3/00

CPC分类号： F01N3/2853 ,  F01N3/0231 ,  F01N3/035 ,  F01N13/0097 ,  F02D41/1467 ,  F02D2200/0812

摘要： An exhaust gas purifying system reliably detects an amount of accumulated particulates, lengthens forced regeneration intervals, and improves fuel efficiency. The exhaust gas purifying system comprises: a particulate filter 22 disposed in an exhaust system of an internal combustion engine 2 and collecting particulates from exhaust gas, and an NO2 generating unit 21 upstream of or in the particulate filter 22; a discharged particulate amount calculating unit A1 calculates an amount Me of discharged particulates on the basis of an excess air ratio λ; a burnt particulate amount calculating unit A2 calculates an amount Mb of burnt particulates on the basis of the temperature of exhaust gas in front of the particulate filter or the temperature of the particulate filter; and a particulate accumulation amount calculating unit calculates an amount Ma of accumulated particulates on the basis of the amount Me of discharged particulates or the amount Mb of burnt particulates.

摘要翻译： 排气净化系统可靠地检测累积的微粒量，延长强制再生间隔，提高燃料效率。 废气净化系统包括：设置在内燃机2的排气系统中并从废气中收集微粒的微粒过滤器22和微粒过滤器22上游或其中的NO 2产生单元21; 排出微粒量计算单元A1基于过量空气比λ计算排出的微粒的量Me; 烧成颗粒量计算单元A2基于颗粒过滤器前面的废气温度或颗粒过滤器的温度来计算燃烧微粒的量Mb; 颗粒蓄积量计算单元基于排出的微粒的量Me或燃烧的微粒的量Mb来计算积累的微粒的量Ma。

公开(公告)号：US07303071B2

公开(公告)日：2007-12-04

申请号：US11078473

申请日：2005-03-14

申请人： Shinichi Saito

发明人： Shinichi Saito

IPC分类号： B65D85/30

CPC分类号： B65D5/0227 ,  B65D5/5004 ,  B65D2585/6835

摘要： In a packing container for an electronic instrument, a pair of tubular shaped bottom cushioning portions is formed by bending a pair of inner bottom flaps several times, and a pair of tubular shaped top cushioning portions is formed by bending a pair of inner top flaps several times. Each of the cushioning portions has a reentrant formed by bending side walls thereof inward to the tubular shape, to which a part of electronic instrument is fitted. The bottom cushioning portions and the top cushioning portions are surface contacted with each other for reinforcing the strength of the container in height direction. Each cushioning portion further has a reinforcing board tightly contacting with the side board for reinforcing the side board.

摘要翻译： 在用于电子仪器的包装容器中，通过将一对内底襟翼弯曲数次来形成一对管形底部缓冲部分，并且通过弯曲一对内顶襟翼形成一对管状顶部缓冲部分 次 每个缓冲部分具有通过将其侧壁向内弯曲成管状形成的折入物，电子仪器的一部分安装在该管状上。 底部缓冲部分和顶部缓冲部分彼此表面接触以增强容器在高度方向上的强度。 每个缓冲部分还具有与侧板紧密接触的加强板，用于加强侧板。

公开(公告)号：US20070178616A1

公开(公告)日：2007-08-02

申请号：US11591564

申请日：2006-11-02

申请人： Tadashi Arai ,  Shinichi Saito

发明人： Tadashi Arai ,  Shinichi Saito

IPC分类号： H01L21/00

CPC分类号： H01L51/102 ,  B82Y30/00 ,  H01L51/0015 ,  H01L51/0023 ,  H01L51/0545

摘要： A method of manufacturing a semiconductor device having an organic semiconductor film comprises a step of preparing a transparent substrate at least having an opaque gate electrode and a gate insulator thereover, a step of forming a layer containing metal-nano-particles as a conductive layer for a source electrode and a drain electrode to the thus prepared transparent substrate, a step of applying exposure to the transparent substrate on the side of a surface not mounted with the opaque gate electrode, a step of flushing away a portion other than the source electrode and the drain electrode in the layer containing the metal-nano-particles after the exposure, and a step of forming an organic semiconductor layer forming a channel portion. Lower and upper electrodes are positioned in self-alignment manner and thus no positional displacement occurs even if a printing method is used. Accordingly, semiconductor devices such as flexible substrates using an organic semiconductor can be manufactured inexpensively by using a printing method.

摘要翻译： 制造具有有机半导体膜的半导体器件的方法包括制备至少具有不透明栅电极和栅极绝缘体的透明基板的步骤，形成包含金属纳米颗粒的层作为导电层的步骤 源极电极和漏电极，对未形成的不透光栅电极的表面侧的透明基板进行曝光，除去源电极以外的部分的工序;以及 在曝光后含有金属 - 纳米粒子的层中的漏电极，以及形成形成沟道部分的有机半导体层的工序。 下电极和上电极以自对准方式定位，因此即使使用打印方法也不会发生位置偏移。 因此，可以通过使用印刷方法廉价地制造诸如使用有机半导体的柔性基板的半导体器件。

公开(公告)号：US20060273357A1

公开(公告)日：2006-12-07

申请号：US11503935

申请日：2006-08-15

申请人： Yasuhiro Shimamoto ,  Shinichi Saito ,  Shimpei Tsujikawa

发明人： Yasuhiro Shimamoto ,  Shinichi Saito ,  Shimpei Tsujikawa

IPC分类号： H01L29/76

CPC分类号： H01L21/28202 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6659

摘要： The technique capable of reducing the power consumption in the MISFET by suppressing the scattering of the carriers due to the fixed charges is provided. A silicon oxynitride film with a physical thickness of 1.5 nm or more and the relative dielectric constant of 4.1 or higher is formed at the interface between a semiconductor substrate and an alumina film. By so doing, a gate insulator composed of the silicon oxynitride film and the alumina film is constituted. The silicon oxynitride film is formed by performing a thermal treatment of a silicon oxide film formed on the semiconductor substrate in a NO or N2O atmosphere. In this manner, the fixed charges in the silicon oxynitride film are set to 5×1012 cm−2 or less, and the fixed charges in the interface between the silicon oxynitride film and the alumina film are set to 5×1012 cm−2 or more.

摘要翻译： 提供了能够通过抑制由于固定电荷引起的载流子散射来降低MISFET中的功耗的技术。 在半导体基板和氧化铝膜之间的界面处形成物理厚度为1.5nm以上，相对介电常数为4.1以上的氮氧化硅膜。 由此构成由氧氮化硅膜和氧化铝膜构成的栅极绝缘体。 氮氧化硅膜是通过在NO或N 2 O气氛中进行在半导体衬底上形成的氧化硅膜的热处理而形成的。 以这种方式，将氧氮化硅膜中的固定电荷设定为5×10 12 -2 -2或更小，并且在氮氧化硅膜和 氧化铝膜设定为5×10 12 cm -2以上。

公开(公告)号：US20060198526A1

公开(公告)日：2006-09-07

申请号：US11222124

申请日：2005-09-08

申请人： Shinichi Saito

发明人： Shinichi Saito

IPC分类号： H04K1/00

CPC分类号： H04K1/00 ,  H04L9/006 ,  H04L9/3263

摘要： An image forming apparatus has a micropattern reading unit, an encoded image generating unit and a code printing control unit. The micropattern reading unit reads a micropattern of a sheet. The encoded image generating unit generates an encoded image. The encoded image has the micropattern and a private key of a user. The code printing control unit prints the encoded image on the sheet to produce a certificate sheet.