公开(公告)号：US20100206483A1

公开(公告)日：2010-08-19

申请号：US12705600

申请日：2010-02-13

申请人： Carl A. Sorensen ,  Jozef Kudela ,  Robin L. Tiner ,  Suhail Anwar ,  John M. White

发明人： Carl A. Sorensen ,  Jozef Kudela ,  Robin L. Tiner ,  Suhail Anwar ,  John M. White

IPC分类号： C23F1/08 ,  C23C16/00 ,  C23C16/50

CPC分类号： H01J37/32174 ,  H01J37/32091

摘要： For coupling RF power from an RF input of a plasma chamber to the interior of a plasma chamber, an RF bus conductor is connected between the RF input and a plasma chamber electrode. In one embodiment, an RF return bus conductor is connected to an electrically grounded wall of the chamber, and the RF bus conductor and the RF return bus conductor have respective surfaces that are parallel and face each other. In another embodiment, the RF bus conductor has a transverse cross section having a longest dimension oriented perpendicular to the surface of the plasma chamber electrode that is closest to the RF bus conductor.

摘要翻译： 为了将来自等离子体室的RF输入的RF功率耦合到等离子体室的内部，RF总线导体连接在RF输入端和等离子体室电极之间。 在一个实施例中，RF返回总线导体连接到室的电接地壁，并且RF总线导体和RF返回总线导体具有彼此平行并相对的相应表面。 在另一个实施例中，RF总线导体具有垂直于等离子体室电极表面的最长尺寸的横截面，其最接近RF总线导体。

公开(公告)号：US07589031B2

公开(公告)日：2009-09-15

申请号：US11607702

申请日：2006-12-01

申请人： Suhail Anwar ,  Chung-Hee Park ,  Beom Soo Park ,  Han Byoul Kim ,  Soo Young Choi ,  John M. White

发明人： Suhail Anwar ,  Chung-Hee Park ,  Beom Soo Park ,  Han Byoul Kim ,  Soo Young Choi ,  John M. White

IPC分类号： H01L21/31

CPC分类号： H01L21/02274 ,  C23C16/345 ,  H01L21/0217 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/3185 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/67236 ,  H01L29/66765 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of PECVD deposition of silicon-containing films has been discovered and further developed. The method is particularly useful when the films are deposited on substrates having surface areas which are larger than 25,000 cm2. The method prevents the deposition of partially reacted silicon-containing species which form a powdery material or haze (contaminant compound) on the substrate surface. The contaminant compounds are avoided by assuring that the power applied to form a plasma in the PECVD process is maintained, at least at a minimal level, until reactive silicon-containing precursor gases present above the surface of the substrate have been reacted or evacuated from the plasma processing area.

摘要翻译： 已经发现并进一步开发了含硅膜的PECVD沉积方法。 当膜沉积在具有大于25,000cm 2的表面积的基底上时，该方法是特别有用的。 该方法防止在基材表面上沉积形成粉末状物质或雾度（污染物化合物）的部分反应的含硅物质。 通过确保在PECVD工艺中施加以形成等离子体的功率至少保持最小水平，直到存在于衬底表面上方的反应性含硅前体气体已经从 等离子处理区。

公开(公告)号：US07587812B2

公开(公告)日：2009-09-15

申请号：US11672441

申请日：2007-02-07

申请人： William Allan Bagley ,  Paohuei Lee ,  Suhail Anwar ,  Janusz Jozwiak

发明人： William Allan Bagley ,  Paohuei Lee ,  Suhail Anwar ,  Janusz Jozwiak

IPC分类号： H01R13/04

CPC分类号： H01L21/67294 ,  Y10T29/5313

摘要： Systems, methods, and apparatus are provided for including a chip embedded in components of electronic device manufacturing systems adapted to sense, store, and/or update at least one of identification, operational-related and process-related information associated with the components. In other aspects of the invention, a processing chamber component having an embedded chip with storage capacity is adapted to record at least one of identification, operational-related and process-related information associated with the component; and to communicate the information from the chip to enable determination of an operational state of the component. Numerous other aspects are disclosed.

摘要翻译： 提供了系统，方法和装置，用于包括嵌入在电子设备制造系统的组件中的芯片，其适于感测，存储和/或更新与组件相关联的识别，操作相关和与过程相关的信息中的至少一个。 在本发明的其它方面，具有具有存储容量的嵌入式芯片的处理室组件适于记录与该组件相关联的识别，操作相关和与过程相关的信息中的至少一个; 并且从芯片传送信息以使得能够确定组件的操作状态。 公开了许多其他方面。

公开(公告)号：US09068262B2

公开(公告)日：2015-06-30

申请号：US13110184

申请日：2011-05-18

申请人： Jozef Kudela ,  Jonghoon Baek ,  John M. White ,  Robin Tiner ,  Suhail Anwar ,  Gaku Furuta

发明人： Jozef Kudela ,  Jonghoon Baek ,  John M. White ,  Robin Tiner ,  Suhail Anwar ,  Gaku Furuta

IPC分类号： C23C16/455 ,  C23C16/509 ,  H01J37/32

CPC分类号： B05B1/185 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32651 ,  Y10T137/6851

摘要： Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.

摘要翻译： 本发明的实施例通常包括用于喷头组件的屏蔽框架组件和具有屏蔽框架组件的喷头组件，所述屏蔽框架组件包括紧密配合在真空处理室中的喷头周边周围的绝缘体。 在一个实施例中，喷头组件包括气体分配板和环绕气体分布板的周边边缘的多片框架组件。 多件式框架组件允许气体分配板的膨胀而不产生可能导致电弧的间隙。 在其它实施例中，绝缘体被定位成具有集中在位于其中的气体分配板的周边的电场，从而减少电弧电势。

公开(公告)号：US08674844B2

公开(公告)日：2014-03-18

申请号：US12661699

申请日：2010-03-19

申请人： Beom Soo Park ,  Hong Soon Kim ,  Soo Young Choi ,  James Hoffman ,  Suhail Anwar ,  John M. White

发明人： Beom Soo Park ,  Hong Soon Kim ,  Soo Young Choi ,  James Hoffman ,  Suhail Anwar ,  John M. White

IPC分类号： G08B21/00

CPC分类号： H01J37/32183 ,  H01J37/32935 ,  H01J37/3299

摘要： Malfunction of a component within an RF-powered plasma chamber is detected by observing an operating condition of the plasma chamber and detecting when the operating condition deviates from a previously observed range bounded by lower and upper limits. The lower and upper limits are determined by observing the minimum and maximum values of that operating condition during the processing of workpieces throughout one or more plasma chamber cleaning cycles immediately preceding the most recent cleaning of the plasma chamber.

摘要翻译： 通过观察等离子体室的操作状态并检测何时操作条件偏离由下限和上限限定的先前观察范围，来检测RF供电的等离子体室内部件的故障。 通过在紧邻等离子体室的最近清洁之前的一个或多个等离子体室清洁循环期间观察工件处理期间该操作条件的最小值和最大值来确定下限和上限。

公开(公告)号：US20130126331A1

公开(公告)日：2013-05-23

申请号：US13360652

申请日：2012-01-27

申请人： Jozef Kudela ,  Tsutomu Tanaka ,  Carl A. Sorensen ,  Suhail Anwar ,  John M. White

发明人： Jozef Kudela ,  Tsutomu Tanaka ,  Carl A. Sorensen ,  Suhail Anwar ,  John M. White

IPC分类号： H01P3/16 ,  H05H1/46 ,  H01L21/02

CPC分类号： H01P3/16 ,  H01J37/32229 ,  H01L21/02 ,  H01L21/02104 ,  H05H1/46 ,  H05H2001/4622

摘要： A guided wave applicator comprising two electrically conductive waveguide walls and a waveguide dielectric. The volume of the waveguide dielectric is composed of non-gaseous dielectric material and is positioned between the two waveguide walls. The waveguide dielectric includes first and second longitudinal ends and includes first, second, third and fourth sides extending longitudinally between the two longitudinal ends. The first waveguide wall is positioned so that it covers the first side of the waveguide dielectric, and the second waveguide wall is positioned so that it covers the second side of the waveguide dielectric. In operation, electrical power can be supplied to one or both longitudinal ends of the waveguide dielectric, whereby the power can be coupled to a plasma through the exposed sides of the waveguide dielectric.

摘要翻译： 导波装置，其包括两个导电波导壁和波导电介质。 波导介质的体积由非气体电介质材料构成，并且位于两个波导壁之间。 波导电介质包括第一和第二纵向端部，并且包括在两个纵向端部之间纵向延伸的第一，第二，第三和第四侧面。 第一波导壁被定位成使得其覆盖波导电介质的第一侧，并且第二波导壁被定位成使得其覆盖波导电介质的第二侧。 在操作中，可以向波导介质的一个或两个纵向端提供电力，由此可以通过波导电介质的暴露侧将功率耦合到等离子体。

公开(公告)号：US20090258162A1

公开(公告)日：2009-10-15

申请号：US12422183

申请日：2009-04-10

申请人： GAKU FURUTA ,  Young-Jin Choi ,  Soo Young Choi ,  Beom Soo Park ,  John M. White ,  Suhail Anwar ,  Robin L. Tiner

发明人： GAKU FURUTA ,  Young-Jin Choi ,  Soo Young Choi ,  Beom Soo Park ,  John M. White ,  Suhail Anwar ,  Robin L. Tiner

IPC分类号： C23C16/44 ,  C23C16/00 ,  H05H1/24

CPC分类号： H01J37/32357 ,  C23C16/4405 ,  C23C16/507 ,  H01J37/3244 ,  H01J2237/3321

摘要： The present invention generally includes a plasma enhanced chemical vapor deposition (PECVD) processing chamber having an RF power source coupled to the backing plate at a location separate from the gas source. By feeding the gas into the processing chamber at a location separate from the RF power, parasitic plasma formation in the gas tubes leading to the processing chamber may be reduced. The gas may be fed to the chamber at a plurality of locations. At each location, the gas may be fed to the processing chamber from the gas source by passing through a remote plasma source as well as an RF choke or RF resistor.

摘要翻译： 本发明通常包括等离子体增强化学气相沉积（PECVD）处理室，其具有在与气源分开的位置处连接到背板的RF功率源。 通过在与RF功率分开的位置处将气体供给到处理室中，可以减少通向处理室的气体管中的寄生等离子体形成。 气体可以在多个位置被供给到腔室。 在每个位置，气体可以通过远程等离子体源以及RF扼流器或RF电阻器从气体源馈送到处理室。

公开(公告)号：US20090107955A1

公开(公告)日：2009-04-30

申请号：US12205414

申请日：2008-09-05

申请人： ROBIN L. TINER ,  Suhail Anwar ,  Gaku Furuta ,  Young Jin Choi ,  Beom Soo Park ,  Soo Young Choi ,  John M. White

发明人： ROBIN L. TINER ,  Suhail Anwar ,  Gaku Furuta ,  Young Jin Choi ,  Beom Soo Park ,  Soo Young Choi ,  John M. White

IPC分类号： B44C1/22 ,  C23C16/455 ,  C23C16/44 ,  C23F1/08

CPC分类号： H01J37/32357 ,  C23C16/4404 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32834

摘要： The present invention generally includes a chamber liner spaced from a chamber wall to permit processing gases to be pulled between the chamber liner and the chamber wall when withdrawing gases from the processing chamber. When the vacuum pump is below the susceptor, processing gases will be drawn below the susceptor and may lead to undesired deposition onto process chamber components. Additionally, the processing gases will be pulled past the slit valve opening and potentially deposit within the slit valve opening. When material deposits in the slit valve opening, flaking may occur and contaminate the substrates. By drawing the processing gases along the sidewalls other than the one having the slit valve opening therethrough, undesired deposition on the slit valve opening may be reduced.

摘要翻译： 本发明通常包括与室壁间隔开的腔室衬套，以便当从处理腔室排出气体时允许处理气体在腔室衬套和室壁之间被拉动。 当真空泵在基座下方时，处理气体将被拉到基座下方，并可能导致不希望的沉积到处理室部件上。 此外，处理气体将被拉过狭缝阀开口并可能沉积在狭缝阀开口内。 当材料沉积在狭缝阀开口中时，会发生剥落并污染基板。 通过沿着具有狭缝阀开口的侧壁以外的侧壁吸收处理气体，可以减少狭缝阀开口上的不期望的沉积。

公开(公告)号：US20080061793A1

公开(公告)日：2008-03-13

申请号：US11925893

申请日：2007-10-27

申请人： Suhail Anwar ,  Remegio Manacio ,  Chung-Hee Park ,  Dong-Kil Yim ,  Soo Choi

发明人： Suhail Anwar ,  Remegio Manacio ,  Chung-Hee Park ,  Dong-Kil Yim ,  Soo Choi

IPC分类号： G01R31/08 ,  G01N27/62

CPC分类号： G01R31/1254

摘要： Method and apparatus for detecting or suppressing electrical arcing or other abnormal change in the electrical impedance of a load connected to a power source. Preferably the load is a plasma chamber used for manufacturing electronic components such as semiconductors and flat panel displays. Arcing is detected by monitoring one or more sensors. Each sensor either responds to a characteristic of the electrical power being supplied by an electrical power source to the plasma or is coupled to the plasma chamber so as to respond to an electromagnetic condition within the chamber. Arcing is suppressed by reducing the power output for a brief period. Then the power source increases its power output, preferably to its original value. If the arcing resumes, the power source repeats the steps of reducing and then restoring the power output.

摘要翻译： 用于检测或抑制连接到电源的负载的电阻抗的电弧或其他异常变化的方法和装置。 优选地，负载是用于制造诸如半导体和平板显示器的电子部件的等离子体室。 通过监视一个或多个传感器来检测电弧。 每个传感器或者响应于由电源提供给等离子体的电力的特性，或者耦合到等离子体室，以便对室内的电磁条件作出响应。 通过在短时间内减少功率输出来抑制电弧。 然后电源增加其功率输出，最好提高到其原始值。 如果电弧恢复，则电源重复减少然后恢复功率输出的步骤。

公开(公告)号：US20060017386A1

公开(公告)日：2006-01-26

申请号：US11179036

申请日：2005-07-11

申请人： Carl Sorensen ,  John White ,  Suhail Anwar

发明人： Carl Sorensen ,  John White ,  Suhail Anwar

IPC分类号： H01J7/24

CPC分类号： H01J37/32082 ,  H01J37/32183

摘要： In certain embodiments, an apparatus for providing a fixed impedance transformation network for driving a plasma chamber includes a pre-match network adapted to couple between an Active RF match network and a plasma chamber load associated with the plasma chamber. The pre-match network includes (1) a first capacitive element; (2) an inductive element connected in parallel with the first capacitive element to form a parallel circuit that presents a stepped-up impedance to an output of the Active RF match network such that a voltage required to drive the plasma chamber load is reduced; and (3) a second capacitive element coupled to the parallel circuit and adapted to couple to the plasma chamber load. The second capacitive element reduces or cancels at least in part a reactance corresponding to an inductance associated with the plasma chamber load. Numerous other aspects are provided.