公开(公告)号：US20080025962A1

公开(公告)日：2008-01-31

申请号：US11791770

申请日：2005-11-30

申请人： Shinichiro Hayashi ,  Naoyuki Sato ,  Daisuke Takeuchi ,  Ryuichi Morishita

发明人： Shinichiro Hayashi ,  Naoyuki Sato ,  Daisuke Takeuchi ,  Ryuichi Morishita

IPC分类号： A61K38/19 ,  A61K31/7088 ,  A61K38/45 ,  A61P25/28

CPC分类号： A61K38/1866 ,  A61K31/7088 ,  A61K38/1833 ,  A61K45/06 ,  A61K48/00 ,  G01N33/5073 ,  G01N2333/4709 ,  G01N2800/2821 ,  A61K2300/00

摘要： The present invention provides a prophylactic/therapeutic agent for Alzheimer's disease comprising a substance that inhibits the action of β-amyloid 1-40 to suppress vascular endothelial precursor cell differentiation and/or endothelial precursor differentiation from stem cells and/or a substance that promotes vascularization as an active ingredient. The present invention also provides a screening method for a substance that inhibits the action of β-amyloid 1-40 to suppress vascular endothelial precursor cell differentiation and/or endothelial precursor differentiation from stem cells and/or a substance that promotes vascularization.

摘要翻译： 本发明提供了一种阿尔茨海默病的预防/治疗剂，其包括抑制β-淀粉样蛋白1-40的作用以抑制血管内皮前体细胞分化和/或内皮前体从干细胞分化和/或促进血管形成的物质的物质 作为活性成分。 本发明还提供了抑制β-淀粉样蛋白1-40的作用以抑制血管内皮前体细胞分化和/或内皮前体从干细胞分化和/或促进血管形成的物质的筛选方法。

公开(公告)号：US07244982B2

公开(公告)日：2007-07-17

申请号：US11487969

申请日：2006-07-18

申请人： Shinya Natsume ,  Shinichiro Hayashi

发明人： Shinya Natsume ,  Shinichiro Hayashi

IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L28/65 ,  H01L21/31637 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10885 ,  H01L28/90

摘要： A semiconductor device has a capacitive element including a first conductive film formed on the bottom and wall surfaces of an opening formed in an insulating film on a substrate, a dielectric film formed on the first conductive film, and a second conductive film formed on the dielectric film. The dielectric film of the capacitive element is crystallized. The first and second conductive films are made of a polycrystal of an oxide, a nitride or an oxynitride of a noble metal.

摘要翻译： 半导体器件具有电容元件，该电容元件包括形成在基板的绝缘膜上形成的开口的底部和壁面上的第一导电膜，形成在第一导电膜上的电介质膜，以及形成在电介质上的第二导电膜 电影。 电容元件的电介质膜结晶。 第一和第二导电膜由贵金属的氧化物，氮化物或氧氮化物的多晶体制成。

公开(公告)号：US20070031981A1

公开(公告)日：2007-02-08

申请号：US11543225

申请日：2006-10-05

申请人： Toshitaka Tatsunari ,  Shinichiro Hayashi

发明人： Toshitaka Tatsunari ,  Shinichiro Hayashi

IPC分类号： H01L21/00 ,  H01L21/8242 ,  H01L21/20

CPC分类号： H01L28/55 ,  C23C16/40 ,  H01L28/91

摘要： In a method for forming a ferroelectric film of insulating metal oxide on a surface of an electrode with a concave or a convex or in convex shape which is formed above a substrate, multiple types of source gases constituting a material gas and each containing an organometallic compound are introduced into a chamber and main components of the multiple types of source gases are allowed to chemically react with one another with the chemical reaction proceeding depending on the reaction rate. Then, the ferroelectric film is deposited on the surface of the electrode.

摘要翻译： 在形成在基板的上方的具有凹凸或凸状的电极的表面上形成绝缘金属氧化物的铁电体膜的方法中，构成材料气体的各种源气体各自含有有机金属化合物 被引入室中，允许多种类型的源气体的主要组分彼此化学反应，化学反应根据反应速率进行。 然后，将铁电体膜沉积在电极的表面上。

公开(公告)号：US07166884B2

公开(公告)日：2007-01-23

申请号：US11022973

申请日：2004-12-28

申请人： Hisashi Yano ,  Shinichiro Hayashi

发明人： Hisashi Yano ,  Shinichiro Hayashi

IPC分类号： H01L27/108 ,  H01L21/00 ,  H01L21/8242

CPC分类号： H01L28/40 ,  C23C16/409 ,  H01L21/31604 ,  H01L21/31691 ,  H01L21/32136 ,  H01L28/56 ,  H01L28/60

摘要： As a method for fabricating a semiconductor device, a lower electrode is first formed on a semiconductor substrate and then a first ferroelectric film is formed on the lower electrode by CVD using a first source gas. Thereafter, a second ferroelectric film is formed on the first ferroelectric film by CVD using a second source gas. Subsequently, an upper electrode is formed on the second ferroelectric film. In this method, the concentration of bismuth contained in the first source gas is different from the concentration of bismuth contained in the second source gas.

摘要翻译： 作为制造半导体器件的方法，首先在半导体衬底上形成下电极，然后通过使用第一源气体的CVD在下电极上形成第一铁电体膜。 此后，通过使用第二源气体的CVD，在第一铁电体膜上形成第二铁电体膜。 随后，在第二铁电体膜上形成上电极。 在该方法中，第一源气体中所含的铋浓度与第二源气体中所含的铋浓度不同。

公开(公告)号：US07132300B2

公开(公告)日：2006-11-07

申请号：US10878228

申请日：2004-06-29

申请人： Toshitaka Tatsunari ,  Shinichiro Hayashi

发明人： Toshitaka Tatsunari ,  Shinichiro Hayashi

IPC分类号： H01L21/312

CPC分类号： H01L28/55 ,  C23C16/40 ,  H01L28/91

摘要： In a method for forming a ferroelectric film of insulating metal oxide on a surface of an electrode with a concave or a convex or in convex shape which is formed above a substrate, multiple types of source gases constituting a material gas and each containing an organometallic compound are introduced into a chamber and main components of the multiple types of source gases are allowed to chemically react with one another with the chemical reaction proceeding depending on the reaction rate. Then, the ferroelectric film is deposited on the surface of the electrode.

摘要翻译： 在形成在基板的上方的具有凹凸或凸状的电极的表面上形成绝缘金属氧化物的铁电体膜的方法中，构成材料气体的各种源气体各自含有有机金属化合物 被引入室中，允许多种类型的源气体的主要组分彼此化学反应，化学反应根据反应速率进行。 然后，将铁电体膜沉积在电极的表面上。

公开(公告)号：US07015564B2

公开(公告)日：2006-03-21

申请号：US10916482

申请日：2004-08-12

申请人： Yoshihisa Nagano ,  Shinichiro Hayashi

发明人： Yoshihisa Nagano ,  Shinichiro Hayashi

IPC分类号： H01L29/00

CPC分类号： H01L28/55 ,  H01L27/10852 ,  H01L28/65 ,  H01L28/90

摘要： A capacitive element includes a lower electrode having a three-dimensional shape, an upper electrode formed so as to be opposed to the lower electrode, and a capacitor insulating film formed between the lower and upper electrodes and made of a crystallized ferroelectric material. The thickness of the capacitor insulating film is set at 12.5 through 100 nm both inclusive.

摘要翻译： 电容元件包括具有三维形状的下电极，形成为与下电极相对的上电极，以及形成在下电极和上电极之间并由结晶铁电材料制成的电容器绝缘膜。 电容绝缘膜的厚度设定为12.5〜100nm。

公开(公告)号：US06867452B2

公开(公告)日：2005-03-15

申请号：US10278581

申请日：2002-10-23

申请人： Shinichiro Hayashi ,  Vikram Joshi ,  Narayan Solayappan ,  Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo

发明人： Shinichiro Hayashi ,  Vikram Joshi ,  Narayan Solayappan ,  Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo

IPC分类号： H01L21/314 ,  H01L21/316 ,  H01L27/06 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L21/02197 ,  H01L21/02205 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31691 ,  H01L27/0629

摘要： A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulas AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1−x)(TayNb1−y)2O6, where 0≦y≦1.0 and 0≦y≦1.0; (BaxSr1−x)2(TayNb1−y)2O7, where 0≦x≦1.0 and 0≦y≦1.0; and (BaxSr1−x)2Bi2(TayNb1−y)2O10, where 0≦x≦1.0 and 0≦y≦1.0. Thin films according to the invention have a relative dielectric constant ≧40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is

摘要翻译： 一种高介电常数绝缘体，包括选自钨青铜型氧化物，烧绿石型氧化物和Bi 2 O 3与选自钙钛矿和烧绿石型氧化物的氧化物的组合的金属氧化物的薄膜 。 一个实施方案包含由一般化学计量式AB2O6，A2B2O7和A2B2B2O10表示的金属氧化物，其中A表示选自由Ba，Bi，Sr，Pb，Ca，K，Na和La组成的金属组中的A位原子; B表示选自由Ti，Zr，Ta，Hf，Mo，W和Nb组成的金属组中的B位原子。 优选地，金属氧化物是（BaxSr1-x）（TayNb1-y）2O6，其中0 <= y <= 1.0且0 <= Y＆LE; 1.0; （BAxSr1-x）2（TayNb1-y）2O7，其中0 <= x <= 1.0且0 <= y <= 1.0; AND（BAxSr1-x）2Bi2（TayNb1-y）2O10，其中0 <= x <= 1.0且0 <= y <= 1.0。 根据本发明的薄膜的相对介电常数> 40，优选约100。本发明的金属氧化物中的Vcc值接近零。 Tcc的值<1000ppm，优选<100。

公开(公告)号：US06830623B2

公开(公告)日：2004-12-14

申请号：US10096893

申请日：2002-03-12

申请人： Shinichiro Hayashi ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

发明人： Shinichiro Hayashi ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

IPC分类号： B65G100

CPC分类号： C23C18/1216 ,  C23C18/1291 ,  C23C18/14 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31691

摘要： A plurality of liquids, the flow of each controlled by a volumetric flowrate controller, are mixed in a mixer to form a final precursor that is misted and then deposited on a substrate. A physical property of precursor liquid is adjusted by adjusting the volumetric flowrate controllers, so that when precursor is applied to substrate and treated, the resulting thin film of solid material has a smooth and planar surface. Typically the physical property is the viscosity of the precursor, which is selected to be relatively low, in the range of 1-2 centipoise.

摘要翻译： 将多个液体，每个由体积流量控制器控制的流量在混合器中混合以形成被雾化并随后沉积在基底上的最终前体。 通过调节体积流量控制器来调节前体液体的物理性质，使得当将前体施加到基底并进行处理时，所得到的固体材料薄膜具有平滑和平坦的表面。 通常物理性质是前体的粘度，其被选择为相对较低，在1-2厘泊的范围内。

公开(公告)号：US06753566B2

公开(公告)日：2004-06-22

申请号：US10441118

申请日：2003-05-20

申请人： Toshie Kutsunai ,  Shinichiro Hayashi ,  Takumi Mikawa ,  Yuji Judai

发明人： Toshie Kutsunai ,  Shinichiro Hayashi ,  Takumi Mikawa ,  Yuji Judai

IPC分类号： H01L27108

CPC分类号： H01L28/55

摘要： An impurity diffusion layer serving as the source or the drain of a transistor is formed in a semiconductor substrate, and a protection insulating film is formed so as to cover the transistor. A capacitor lower electrode, a capacitor dielectric film of an oxide dielectric film and a capacitor upper electrode are successively formed on the protection insulating film. A plug for electrically connecting the impurity diffusion layer of the transistor to the capacitor lower electrode is buried in the protection insulating film. An oxygen barrier layer is formed between the plug and the capacitor lower electrode. The oxygen barrier layer is made from a composite nitride that is a mixture or an alloy of a first nitride having a conducting property and a second nitride having an insulating property.

摘要翻译： 在半导体衬底中形成用作晶体管的源极或漏极的杂质扩散层，形成覆盖晶体管的保护绝缘膜。 在保护绝缘膜上依次形成电容器下电极，氧化物电介质膜的电容电介质膜和电容器上电极。 用于将晶体管的杂质扩散层电连接到电容器下电极的插头埋入保护绝缘膜中。 在塞子和电容器下电极之间形成氧阻隔层。 氧阻隔层由作为具有导电性的第一氮化物和具有绝缘性的第二氮化物的混合物或合金的复合氮化物制成。

公开(公告)号：US06737697B2

公开(公告)日：2004-05-18

申请号：US09779662

申请日：2001-02-09

申请人： Toshie Kutsunai ,  Shinichiro Hayashi ,  Yuji Judai ,  Yoshihisa Nagano

发明人： Toshie Kutsunai ,  Shinichiro Hayashi ,  Yuji Judai ,  Yoshihisa Nagano

IPC分类号： H01L2976

CPC分类号： H01L28/55 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/31612

摘要： A capacitor including a capacitor lower electrode, a capacitor dielectric film of a highly dielectric film or a ferroelectric film and a capacitor upper electrode is formed on a semiconductor substrate. A protection film is formed on the semiconductor substrate so as to cover the capacitor. A first TEOS film having a relatively large water content is formed on the protection film through first TEOS-O3 CVD where an ozone concentration is relatively low. A second TEOS-O3 film having a relatively small water content is formed on the first TEOS-O3 film through second TEOS-O3 CVD where the ozone concentration is relatively high.