公开(公告)号：US06771346B2

公开(公告)日：2004-08-03

申请号：US09737541

申请日：2000-12-15

申请人： Osamu Sugimoto ,  Hajime Imai

发明人： Osamu Sugimoto ,  Hajime Imai

IPC分类号： G02F11345

CPC分类号： G02F1/13458 ,  G02F1/136227 ,  G02F1/136286

摘要： An protective film and a resin layer are stacked on an insulation substrate on which a TFT is formed, and after a contact hole is formed in the resin layer, the protective film below the contact hole is etched and removed. A pixel display electrode is allowed to contact a drain electrode at the area of the contact hole; thus, a liquid crystal display is formed. A cut-out section, which communicates with the lower layer is formed in the drain electrode in the area of the contact hole. Upon forming a TFT section island-shape semiconductor layer so as to provide a TFT, a hole section island-shape semiconductor layer is also formed in the area of the contact hole. With this arrangement, it is possible to provide a manufacturing method of a liquid crystal display which can avoid the occurrence of a step discontinuity in the pixel display electrode and the subsequent disconnection in the pixel display electrode.

摘要翻译： 保护膜和树脂层层叠在其上形成有TFT的绝缘基板上，并且在树脂层中形成接触孔之后，蚀刻除去接触孔下方的保护膜。 允许像素显示电极在接触孔的区域处接触漏电极; 从而形成液晶显示器。 在接触孔的区域中的漏电极中形成有与下层连通的切口部。 在形成TFT部分岛状半导体层以提供TFT时，在接触孔的区域中也形成孔部分岛状半导体层。 通过这种布置，可以提供一种液晶显示器的制造方法，其可以避免像素显示电极中的步长不连续的发生和随后的像素显示电极的断开。

公开(公告)号：US4435443A

公开(公告)日：1984-03-06

申请号：US389916

申请日：1982-06-18

申请人： Hajime Imai ,  Masahiro Morimoto ,  Takao Fujiwara

发明人： Hajime Imai ,  Masahiro Morimoto ,  Takao Fujiwara

IPC分类号： C23C14/04 ,  C23C14/22 ,  C23C14/34 ,  H01L21/31 ,  H01L31/0216 ,  H01L31/18 ,  B05D3/06 ,  C23C17/00

CPC分类号： C23C14/225 ,  C23C14/04 ,  C23C14/34 ,  H01L21/31 ,  H01L31/02161 ,  H01L31/18 ,  H01L31/1844 ,  H01L31/186 ,  Y02E10/544 ,  Y02P70/521

摘要： A method for forming a protecting film on the side walls of a semiconductor device, e.g. a semiconductor laser, having an exposed PN junction at the side walls thereof is carried out by the following steps. The semiconductor device is placed on a substrate target made of a protecting film material. Energetic particles are impinged against the substrate target. Particles of the material are emitted from the substrate target and deposited on only the side walls to form the protecting film.

公开(公告)号：US09111810B2

公开(公告)日：2015-08-18

申请号：US13643652

申请日：2011-03-02

申请人： Hideki Kitagawa ,  Shinya Tanaka ,  Hajime Imai ,  Atsuhito Murai ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Kazunori Morimoto ,  Junya Shimada ,  Jun Nishimura

发明人： Hideki Kitagawa ,  Shinya Tanaka ,  Hajime Imai ,  Atsuhito Murai ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Kazunori Morimoto ,  Junya Shimada ,  Jun Nishimura

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L27/12 ,  H01L27/146 ,  H01L27/144

CPC分类号： H01L27/1251 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/1446 ,  H01L27/14632 ,  H01L27/14678

摘要： A circuit board (1) includes a plurality of transistor elements on an insulating substrate (2). At least one of the plurality of transistor elements is an oxide TFT (10) including, as a channel layer (11), an oxide semiconductor. At least one of the plurality of transistor elements is an a-SiTFT (20) (i) being different from the oxide TFT (10) in functions as circuit components and (ii) including, as a channel layer (21), an amorphous silicon semiconductor. The oxide TFT (10) is a top gate transistor, and the a-SiTFT (20) is a bottom gate transistor. This provides: a configuration that can (a) enhance the performance of the circuit board equipped with the TFTs differing in their respective functions as circuit components and (b) reduce the area necessary for mounting the TFTs; and a method for producing the circuit board.

摘要翻译： 电路板（1）在绝缘基板（2）上包括多个晶体管元件。 多个晶体管元件中的至少一个是氧化物TFT（10），其包括作为沟道层（11）的氧化物半导体。 多个晶体管元件中的至少一个是与作为电路元件的功能的氧化物TFT（10）不同的a-SiTFT（20）（i），（ii）包括作为沟道层（21）的无定形 硅半导体。 氧化物TFT（10）是顶栅晶体管，并且a-SiTFT（20）是底栅晶体管。 这提供：一种配置，其可以（a）增强配备有作为电路部件的各自功能不同的TFT的电路板的性能，（b）减小安装TFT所需的面积; 以及电路基板的制造方法。

公开(公告)号：US08749528B2

公开(公告)日：2014-06-10

申请号：US13379783

申请日：2010-02-26

申请人： Hajime Imai ,  Takuya Watanabe ,  Atsuhito Murai ,  Hideki Kitagawa

发明人： Hajime Imai ,  Takuya Watanabe ,  Atsuhito Murai ,  Hideki Kitagawa

IPC分类号： G06F3/042

CPC分类号： H01L27/1214 ,  G02F1/13318 ,  G06F3/0412 ,  G06F3/042 ,  G09G3/3225 ,  G09G2300/0809 ,  G09G2360/14 ,  H01L27/12 ,  H01L27/3269 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/1136 ,  Y02E10/546 ,  Y02E10/548

摘要： A display panel of an organic EL display device includes a photo-detection section that detects reflected light when a screen is touched by a finger or the like. The photo-detection section includes a photodiode that receives the reflected light, and an output amplifier that outputs an output voltage corresponding to the amount of the received light. If an a-Si diode is used for such a photodiode, a sufficiently large signal difference between the bright state and the dark state can be achieved. Also, if a p-Si amplifier is used for the output amplifier, the output voltage becomes the saturation voltage at the time of read-out. This allows the p-Si amplifier to directly output the large difference detected by the a-Si diode as a large difference in the output voltage.

摘要翻译： 有机EL显示装置的显示面板包括：光检测部，其通过手指等触摸屏幕时检测反射光。 光检测部分包括接收反射光的光电二极管和输出与接收光量对应的输出电压的输出放大器。 如果对这种光电二极管使用a-Si二极管，则可以实现明亮状态和黑暗状态之间足够大的信号差。 另外，如果使用p-Si放大器作为输出放大器，则输出电压成为读出时的饱和电压。 这允许p-Si放大器直接输出由a-Si二极管检测的大的差异作为输出电压的大差异。

公开(公告)号：US08659726B2

公开(公告)日：2014-02-25

申请号：US12595782

申请日：2007-12-27

申请人： Hajime Imai ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Yoshihito Hara ,  Junya Shimada ,  Mitsunori Imade ,  Yoshiharu Kataoka

发明人： Hajime Imai ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Yoshihito Hara ,  Junya Shimada ,  Mitsunori Imade ,  Yoshiharu Kataoka

IPC分类号： G02F1/1335 ,  G02F1/136

CPC分类号： G02F1/133555 ,  G02F1/133553 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/134372 ,  G02F2001/136231 ,  G02F2001/136236

摘要： Transflective-type and reflection type liquid crystal display devices having a high image quality are provided with a good production efficiency.A liquid crystal display device according to the present invention is a liquid crystal display device which includes; a first substrate and a second substrate between which liquid crystal is interposed; a first electrode and a second electrode formed on the first substrate for applying a voltage for controlling an orientation of the liquid crystal; a transistor having an electrode which is electrically connected to the first electrode; a metal layer being formed on the first substrate and including a protrusion, a recess, or an aperture; and a reflective layer formed above the metal layer on the first substrate for reflecting incident light toward a display surface. The metal layer is made of a same material as that of a gate electrode of the transistor. The reflective layer includes a protrusion, a recess, or a level difference which is formed in accordance with a protrusion, a recess, or an aperture of the metal layer.

摘要翻译： 具有高图像质量的透反射型和反射型液晶显示装置具有良好的生产效率。 根据本发明的液晶显示装置是一种液晶显示装置，包括： 第一基板和第二基板，液晶插入其间; 第一电极和第二电极，形成在第一基板上，用于施加用于控制液晶取向的电压; 具有电连接到第一电极的电极的晶体管; 金属层形成在第一基板上并且包括突起，凹部或孔; 以及反射层，形成在第一基板上的金属层的上方，用于将入射光反射到显示面。 金属层由与晶体管的栅电极相同的材料制成。 反射层包括根据金属层的突起，凹部或孔形成的突起，凹部或水平差。

公开(公告)号：US20130214279A1

公开(公告)日：2013-08-22

申请号：US13695082

申请日：2011-02-23

申请人： Jun Nishimura ,  Hideki Kitagawa ,  Atsuhito Murai ,  Hajime Imai ,  Shinya Tanaka ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Junya Shimada ,  Kazunori Morimoto

发明人： Jun Nishimura ,  Hideki Kitagawa ,  Atsuhito Murai ,  Hajime Imai ,  Shinya Tanaka ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Junya Shimada ,  Kazunori Morimoto

IPC分类号： H01L27/02

CPC分类号： H01L29/78663 ,  G02F1/13338 ,  G02F1/13624 ,  G06F3/0412 ,  H01L27/0207 ,  H01L27/0705 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L29/78633 ,  H01L29/7869

摘要： A source and drain electrode layer (3s/3d) of an oxide TFT element (3) is formed by a first conductive layer. A gate electrode (3g) of the oxide TFT element (3) and a gate electrode (5g) of an a-Si TFT element (5) are formed by a single conductive layer, that is, a second conductive layer. A source and drain electrode layer (5s/5d) of the a-Si TFT element (5) is formed by a third conductive layer. The third conductive layer is formed above the second conductive layer in a thickness direction in which each conductive layer is stacked on an insulating substrate (2). Further, the first conductive layer is formed below the second conductive layer in the thickness direction. Therefore, it is possible to provide a circuit board that can have an improved degree of integration of transistor elements formed on the insulating substrate.

摘要翻译： 氧化物TFT元件（3）的源极和漏极电极层（3s / 3d）由第一导电层形成。 氧化物TFT元件（3）的栅极（3g）和a-Si TFT元件（5）的栅电极（5g）由单个导电层即第二导电层形成。 a-Si TFT元件（5）的源极和漏极电极层（5s / 5d）由第三导电层形成。 第三导电层形成在第二导电层上方的厚度方向上，其中每个导电层堆叠在绝缘基板（2）上。 此外，第一导电层在厚度方向上形成在第二导电层的下方。 因此，可以提供可以使形成在绝缘基板上的晶体管元件的集成度提高的电路板。

公开(公告)号：US08446404B2

公开(公告)日：2013-05-21

申请号：US13133536

申请日：2009-08-12

申请人： Hideki Kitagawa ,  Hajime Imai ,  Atsuhito Murai

发明人： Hideki Kitagawa ,  Hajime Imai ,  Atsuhito Murai

IPC分类号： G06F3/038 ,  G09G5/00

CPC分类号： H01L31/101 ,  G02F1/1362 ,  G02F2001/13312 ,  G06F3/0412 ,  G06F3/044 ,  H01L27/12

摘要： A display apparatus of the present invention includes display sections (100) and sensor circuit sections (200). A driver line RW for supplying power to a charge storage element (202) in the sensor circuit section (200) is provided so as to overlap, via an interlayer insulating film, a gate line G connected with a gate electrode (102) of a display-drive TFT element (101) in the display section (100). This makes it possible to realize a display apparatus having pixels in which optical sensors are provided which display apparatus makes it possible to suppress a decrease in aperture ratio which is caused by the provision of the sensor circuit sections, and reduce a parasitic capacitance between lines so as to increase a sensitivity of the optical sensors.

摘要翻译： 本发明的显示装置包括显示部分（100）和传感器电路部分（200）。 提供用于向传感器电路部分（200）中的电荷存储元件（202）供电的驱动器线RW，以便经由层间绝缘膜与与栅极电极（102）连接的栅极线G重叠 显示驱动TFT元件（101）。 这使得可以实现具有其中提供光学传感器的像素的显示装置，显示装置可以抑制由提供传感器电路部分引起的开口率的降低，并且减少线之间的寄生电容，因此 以提高光学传感器的灵敏度。

公开(公告)号：US08300186B2

公开(公告)日：2012-10-30

申请号：US12299138

申请日：2007-04-05

申请人： Hajime Imai ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Yoshihito Hara

发明人： Hajime Imai ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Yoshihito Hara

IPC分类号： G02F1/1335

CPC分类号： G02F1/133555 ,  G02F1/133553 ,  G02F1/136227 ,  G02F2001/136281

摘要： A liquid crystal display device, which can be a transflective-type or a reflection-type, includes a reflection section arranged to reflect incident light toward a display surface, wherein the reflection section includes a reflective layer provided on a substrate, and includes a first recess formed in a surface of the reflective layer and a second recess formed in the surface of the reflective layer in the first recess. The first recess corresponds to an aperture of a Cs metal layer, and the second recess corresponds to an aperture of a semiconductor layer. The transflective-type or reflection-type liquid crystal display device has a high image quality at low cost.

摘要翻译： 可以是透反射型或反射型的液晶显示装置包括反射部分，其被布置成将入射光反射到显示表面，其中反射部分包括设置在基板上的反射层，并且包括第一 形成在反射层的表面中的凹部和形成在第一凹部中的反射层的表面中的第二凹部。 第一凹部对应于Cs金属层的孔，第二凹槽对应于半导体层的孔。 半反射型或反射型液晶显示装置以低成本具有高图像质量。

公开(公告)号：US08243236B2

公开(公告)日：2012-08-14

申请号：US12446071

申请日：2007-09-07

申请人： Yoshihito Hara ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Hajime Imai ,  Mitsunori Imade ,  Junya Shimada

发明人： Yoshihito Hara ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Hajime Imai ,  Mitsunori Imade ,  Junya Shimada

IPC分类号： G02F1/1335

CPC分类号： G02F1/133553

摘要： A transflective-type and a reflection-type liquid crystal display device having a high reflection efficiency and a high image quality are provided. A liquid crystal display device of the present invention is a liquid crystal display device including a reflection region for reflecting incident light toward a display surface, wherein the reflection region includes a metal layer, an insulating layer formed on the metal layer, a semiconductor layer formed on the insulating layer, and a reflective layer formed on the semiconductor layer; a plurality of recesses are formed in at least one of the metal layer, the insulating layer and the semiconductor layer; a plurality of dents are formed in the reflective layer in the reflection region according to the plurality of recesses; and a shortest distance a between edge portions of at least two of the plurality of recesses is 4 μm or less.

摘要翻译： 提供了具有高反射效率和高图像质量的透反射型和反射型液晶显示装置。 本发明的液晶显示装置是具有将入射光反射到显示面的反射区域的液晶显示装置，其中反射区域包括金属层，形成在金属层上的绝缘层，形成的半导体层 在绝缘层上形成反射层; 在金属层，绝缘层和半导体层中的至少一个中形成多个凹部; 根据多个凹部，在反射区域中的反射层中形成多个凹痕; 并且所述多个凹部中的至少两个凹部的边缘部之间的最短距离a为4μm以下。

公开(公告)号：US20120037905A1

公开(公告)日：2012-02-16

申请号：US13265766

申请日：2009-11-20

申请人： Atsuhito Murai ,  Yoshiharu Kataoka ,  Takuya Watanabe ,  Hajime Imai ,  Hideki Kitagawa

发明人： Atsuhito Murai ,  Yoshiharu Kataoka ,  Takuya Watanabe ,  Hajime Imai ,  Hideki Kitagawa

IPC分类号： H01L31/153

CPC分类号： H01L31/101 ,  G02F1/13318 ,  G02F1/1362 ,  G02F2201/58 ,  G06F3/0412

摘要： A display device of the present invention includes a display panel (101) including a photodiode (17), which generates a current having a magnitude corresponding to an intensity of light incident on the photoelectric conversion element; and, a backlight (108) for irradiating light from behind the photodiode (17) to beyond a front surface of the display panel (101), wherein: the photodiode (17) includes an activating layer made of hydrogenated a-Si; the light source (108) has a peak wavelength within a range from 780 nm or more to 830 nm or less; and the display device further includes a light blocking member (15) for blocking light having a wavelength less than 780 nm, the light blocking member (15) being provided between a front surface of the display panel (101) and the photodiode (17) and over the photodiode (17). With this, the present invention can perform a stable sensing operation under various environments because the display device is configured to reduce the outside-light-caused noise to the optical sensor and the display device is therefore less susceptible to environment surrounding the display device (outside light intensity etc.).A display device of the present invention includes a display panel (101) including a photodiode (17), which generates a current having a magnitude corresponding to an intensity of light incident on the photoelectric conversion element; and, a backlight (108) for irradiating light from behind the photodiode (17) to beyond a front surface of the display panel (101), wherein: the photodiode (17) includes an activating layer made of hydrogenated a-Si; the light source (108) has a peak wavelength within a range from 780 nm or more to 830 nm or less; and the display device further includes a light blocking member (15) for blocking light having a wavelength less than 780 nm, the light blocking member (15) being provided between a front surface of the display panel (101) and the photodiode (17) and over the photodiode (17). With this, the present invention can perform a stable sensing operation under various environments because the display device is configured to reduce the outside-light-caused noise to the optical sensor and the display device is therefore less susceptible to environment surrounding the display device (outside light intensity etc.).