公开(公告)号：US08581204B2

公开(公告)日：2013-11-12

申请号：US13235088

申请日：2011-09-16

申请人： Chun-Lin Chang ,  Chih-Hong Hwang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

发明人： Chun-Lin Chang ,  Chih-Hong Hwang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC分类号： G01T1/16

CPC分类号： H01L22/10 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/24542 ,  H01J2237/30455 ,  H01J2237/31703 ,  H01L21/265

摘要： An apparatus for monitoring an ion distribution of a wafer comprises a first sensor and a sensor. The first sensor, the second sensor and the wafer are placed in an effective range of a uniform ion implantation current profile. A controller determines the ion dose of each region of the wafer based upon the detected signal from the first sensor and the second sensor. In addition, the controller adjusts the scanning frequency of an ion beam or the movement speed of the wafer to achieve a uniform ion distribution on the wafer.

公开(公告)号：US20130210173A1

公开(公告)日：2013-08-15

申请号：US13372872

申请日：2012-02-14

申请人： Jiann Lih Wu ,  Bo-I Lee ,  Soon Kang Huang ,  Chih-I Peng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

发明人： Jiann Lih Wu ,  Bo-I Lee ,  Soon Kang Huang ,  Chih-I Peng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC分类号： H01L21/66 ,  B24B49/00

CPC分类号： H01L22/12 ,  B24B37/013 ,  B24B37/015 ,  B24B49/105 ,  B24B49/14 ,  H01L22/26

摘要： To provide improved planarization, techniques in accordance with this disclosure include a CMP station that includes a plurality of concentric temperature control elements arranged over a number of concentric to-be-polished wafer surfaces. During polishing, a wafer surface planarity sensor monitors relative heights of the concentric to-be-polished wafer surfaces, and adjusts the temperatures of the concentric temperature control elements to provide an extremely well planarized wafer surface. Other systems and methods are also disclosed.

摘要翻译： 为了提供改进的平面化，根据本公开的技术包括CMP站，其包括布置在多个同心待抛光晶片表面上的多个同心温度控制元件。 在抛光期间，晶片表面平面度传感器监测同心待抛光的晶片表面的相对高度，并且调节同心温度控制元件的温度以提供非常好的平坦化晶片表面。 还公开了其它系统和方法。

公开(公告)号：US20130074872A1

公开(公告)日：2013-03-28

申请号：US13240583

申请日：2011-09-22

申请人： Ming-Hsi Yeh ,  Kuo-Sheng Chuang ,  Ying-Hsueh Chang Chien ,  Chi-Ming Yang ,  Chin-Hsiang Lin

发明人： Ming-Hsi Yeh ,  Kuo-Sheng Chuang ,  Ying-Hsueh Chang Chien ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC分类号： B08B3/08 ,  B08B1/00 ,  B08B7/04 ,  B08B3/02

CPC分类号： H01L21/67046 ,  H01L21/67051

摘要： The present disclosure provides a method and apparatus for cleaning a semiconductor wafer. In an embodiment of the method, a single wafer cleaning apparatus is provided and a wafer is positioned in the apparatus. A first chemical spray is dispensed onto a front surface of the wafer. A back surface of the wafer is cleaned while dispensing the first chemical spray. The cleaning of the back surface may include a brush and spray of cleaning fluids. An apparatus operable to clean the front surface and the back surface of a single semiconductor wafer is also described.

摘要翻译： 本公开提供了一种用于清洁半导体晶片的方法和装置。 在该方法的一个实施例中，提供单个晶片清洁装置，并将晶片定位在装置中。 将第一化学喷雾分配到晶片的前表面上。 在分配第一化学喷雾的同时清洁晶片的背面。 后表面的清洁可以包括刷子和喷射清洁流体。 还描述了可操作以清洁单个半导体晶片的前表面和后表面的装置。

公开(公告)号：US20130044004A1

公开(公告)日：2013-02-21

申请号：US13211847

申请日：2011-08-17

申请人： James Jeng-Jyi Hwang ,  Bo-I Lee ,  Chi-Ming Yang ,  Chin-Hsiang Lin

发明人： James Jeng-Jyi Hwang ,  Bo-I Lee ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC分类号： G08B21/00 ,  H01L21/66 ,  B24B51/00

CPC分类号： B24B37/005 ,  B24B37/042 ,  B24B37/107 ,  B24B49/003 ,  B24B49/10 ,  B24B49/14

摘要： Methods and apparatus for detecting errors in real time in CMP processing. A method includes disposing a semiconductor wafer onto a wafer carrier in a tool for chemical mechanical polishing (“CMP”); positioning the wafer carrier so that a surface of the semiconductor wafer contacts a polishing pad mounted on a rotating platen; dispensing an abrasive slurry onto the rotating polishing pad while maintaining the surface of the semiconductor wafer in contact with the polishing pad to perform a CMP process on the semiconductor wafer; in real time, receiving signals from the CMP tool into a signal analyzer, the signals corresponding to vibration, acoustics, temperature, or pressure; and comparing the received signals from the CMP tool to expected received signals for normal processing by the CMP tool; outputting a result of the comparing. A CMP tool apparatus is disclosed.

摘要翻译： 用于在CMP处理中实时检测误差的方法和装置。 一种方法包括将半导体晶片设置在用于化学机械抛光（CMP）的工具中的晶片载体上; 定位晶片载体，使得半导体晶片的表面接触安装在旋转台板上的抛光垫; 将研磨浆料分配到旋转的抛光垫上，同时保持半导体晶片的表面与抛光垫接触，以在半导体晶片上执行CMP处理; 实时地从CMP工具接收信号到信号分析仪，信号对应于振动，声学，温度或压力; 以及将来自CMP工具的接收信号与由CMP工具进行正常处理的预期接收信号进行比较; 输出比较结果。 公开了一种CMP工具装置。

公开(公告)号：US08921177B2

公开(公告)日：2014-12-30

申请号：US13189108

申请日：2011-07-22

申请人： Ming-Hsi Yeh ,  Hsien-Hsin Lin ,  Ying-Hsueh Chang Chien ,  Yi-Fang Pai ,  Chi-Ming Yang ,  Chin-Hsiang Lin

发明人： Ming-Hsi Yeh ,  Hsien-Hsin Lin ,  Ying-Hsueh Chang Chien ,  Yi-Fang Pai ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC分类号： H01L21/8238 ,  H01L21/20

CPC分类号： H01L29/665 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  Y10S438/976

摘要： A method for fabricating an integrated device is disclosed. A protective layer is formed over a gate structure when forming epitaxial (epi) features adjacent to another gate structure uncovered by the protective layer. The protective layer is thereafter removed after forming the epitaxial (epi) features. The disclosed method provides an improved method for removing the protective layer without substantial defects resulting. In an embodiment, the improved formation method is achieved by providing a protector over an oxide-base material, and then removing the protective layer using a chemical comprising hydrofluoric acid.

摘要翻译： 公开了一种用于制造集成器件的方法。 当形成与由保护层未覆盖的另一个栅极结构相邻的外延（epi）特征时，在栅极结构上形成保护层。 此后，在形成外延（epi）特征之后，去除保护层。 所公开的方法提供了用于去除保护层而没有实质缺陷的改进方法。 在一个实施方案中，改进的形成方法通过在氧化物基材料上提供保护剂，然后使用包含氢氟酸的化学品除去保护层来实现。

公开(公告)号：US08871605B2

公开(公告)日：2014-10-28

申请号：US13449721

申请日：2012-04-18

申请人： Chin-Ming Lin ,  Wan-Lai Chen ,  Chia-Hung Huang ,  Chi-Ming Yang ,  Chin-Hsiang Lin

发明人： Chin-Ming Lin ,  Wan-Lai Chen ,  Chia-Hung Huang ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC分类号： H01L21/76

CPC分类号： H01L21/681 ,  H01L21/268 ,  H01L21/67282 ,  H01L21/683 ,  H01L23/544 ,  H01L2223/54426 ,  H01L2223/54493 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of orienting a semiconductor wafer. The method includes rotating a wafer about a central axis; exposing a plurality of edge portions of the rotating wafer to light having a predetermined wavelength from one or more light sources; detecting a subsurface mark in one of the plurality of edge portions of the rotating wafer; and orienting the wafer using the detected subsurface mark as a reference.

摘要翻译： 一种定向半导体晶片的方法。 该方法包括围绕中心轴旋转晶片; 将旋转晶片的多个边缘部分暴露于来自一个或多个光源的具有预定波长的光; 检测所述旋转晶片的所述多个边缘部分之一中的地下标记; 并使用检测到的地下标记作为参考来定向晶片。

公开(公告)号：US08518634B2

公开(公告)日：2013-08-27

申请号：US13022931

申请日：2011-02-08

申请人： Ming-Hsi Yeh ,  Yu-Fu Lin ,  Shao-Yen Ku ,  Chi-Ming Yang ,  Chin-Hsiang Lin

发明人： Ming-Hsi Yeh ,  Yu-Fu Lin ,  Shao-Yen Ku ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC分类号： G03F7/26 ,  G03F7/40

CPC分类号： G03F7/40 ,  H01L21/0273 ,  H01L21/32139 ,  H01L21/823814 ,  H01L21/823828

摘要： A method of making an integrated circuit is provided. The method includes providing a substrate having a photosensitive layer. The photosensitive layer is exposed to a radiation beam. The exposed photosensitive layer is developed in a first chamber. In the first chamber, a cleaning process is performed on the developed photosensitive layer. The cleaning process includes using a rinse solution including at least one of ozone, hydrogen peroxide, and oxalic acid.

摘要翻译： 提供一种制造集成电路的方法。 该方法包括提供具有感光层的基底。 感光层暴露于辐射束。 曝光的感光层在第一室中显影。 在第一室中，对显影的感光层进行清洁处理。 清洁方法包括使用包括臭氧，过氧化氢和草酸中的至少一种的冲洗溶液。

公开(公告)号：US20130089958A1

公开(公告)日：2013-04-11

申请号：US13269107

申请日：2011-10-07

申请人： Ming-Hsi Yeh ,  Chi-Ming Yang ,  Chin-Hsiang Lin

发明人： Ming-Hsi Yeh ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC分类号： H01L21/336 ,  H01L21/28

CPC分类号： H01L29/66818 ,  H01L29/66795

摘要： Semiconductor materials, particularly III-V materials used to form, e.g., a finlike structure can suffer structural damage during chemical mechanical polishing steps. This damage can be reduced or eliminated by oxidizing the damaged surface of the material and then etching away the oxidized material. The etching step can be accomplished simultaneously with a step of etching back a patterned oxide layers, such as a shallow trench isolation layer.

公开(公告)号：US20130078810A1

公开(公告)日：2013-03-28

申请号：US13240856

申请日：2011-09-22

申请人： Bo-I Lee ,  Huang Soon Kang ,  Chi-Ming Yang ,  Chin-Hsiang Lin

发明人： Bo-I Lee ,  Huang Soon Kang ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC分类号： H01L21/302 ,  B24B53/00 ,  B24B7/00

CPC分类号： B24B37/32 ,  B24B9/065

摘要： The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a polishing head that is operable to perform a polishing process to a wafer. The apparatus includes a retaining ring that is rotatably coupled to the polishing head. The retaining ring is operable to secure the wafer to be polished. The apparatus includes a soft material component located within the retaining ring. The soft material component is softer than silicon. The soft material component is operable to grind a bevel region of the wafer during the polishing process. The apparatus includes a spray nozzle that is rotatably coupled to the polishing head. The spray nozzle is operable to dispense a cleaning solution to the bevel region of the wafer during the polishing process.

摘要翻译： 本公开提供了一种用于制造半导体器件的装置。 该装置包括可操作以对晶片执行抛光处理的抛光头。 该装置包括可旋转地联接到抛光头的保持环。 保持环可操作以固定要抛光的晶片。 该装置包括位于保持环内的软材料部件。 软材料组分比硅软。 柔性材料部件可操作以在抛光过程中研磨晶片的斜面区域。 该装置包括可旋转地联接到抛光头的喷嘴。 喷射喷嘴可操作以在抛光过程中将清洁溶液分配到晶片的斜面区域。

公开(公告)号：US20130056031A1

公开(公告)日：2013-03-07

申请号：US13226216

申请日：2011-09-06

申请人： Ying-Hsueh Chang Chien ,  Shao-Yen Ku ,  Ming-Hsi Yeh ,  Chi-Ming Yang ,  Chin-Hsiang Lin

发明人： Ying-Hsueh Chang Chien ,  Shao-Yen Ku ,  Ming-Hsi Yeh ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC分类号： B08B7/04

CPC分类号： B08B3/12 ,  B08B3/02 ,  H01L21/67028 ,  H01L21/6704

摘要： Methods and apparatus for a movable megasonic wafer probe. A method is disclosed including positioning a movable probe on a wafer surface, the movable probe having an open bottom portion that exposes a portion of the wafer surface; applying a liquid onto the wafer surface through a bottom portion of the movable probe; and moving the movable probe at a predetermined scan speed to traverse the wafer surface, applying the liquid to the wafer surface while moving over the wafer surface. In additional embodiments the method includes providing a transducer for applying megasonic energy to the wafer surface. Apparatus embodiments are disclosed including the movable megasonic wafer probe.

摘要翻译： 移动式超声波晶片探针的方法和装置。 公开了一种方法，包括将可移动探针定位在晶片表面上，所述可移动探针具有暴露晶片表面的一部分的开放底部; 通过可移动探针的底部将液体施加到晶片表面上; 并且以预定的扫描速度移动可移动探针以穿过晶片表面，同时在晶片表面上移动时将液体施加到晶片表面。 在另外的实施例中，该方法包括提供用于将兆声波能量施加到晶片表面的换能器。 公开了包括可移动兆声晶片探针的装置实施例。