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    Multilevel interconnect structure containing air gaps and method for making
    51.
    发明授权
    Multilevel interconnect structure containing air gaps and method for making 有权
    包含气隙的多层互连结构和制造方法

    公开(公告)号：US06737725B2

    公开(公告)日：2004-05-18

    申请号：US10144574

    申请日：2002-05-13

    申请人： Alfred Grill ,  Jeffrey Curtis Hedrick ,  Christopher Vincent Jahnes ,  Satyanarayana Venkata Nitta ,  Kevin S. Petrarca ,  Sampath Purushothaman ,  Katherine Lynn Saenger ,  Stanley Joseph Whitehair

    发明人： Alfred Grill ,  Jeffrey Curtis Hedrick ,  Christopher Vincent Jahnes ,  Satyanarayana Venkata Nitta ,  Kevin S. Petrarca ,  Sampath Purushothaman ,  Katherine Lynn Saenger ,  Stanley Joseph Whitehair

    IPC分类号： H01L2900

    CPC分类号： H01L21/7682 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76885

    摘要： A method for forming a multilayer interconnect structure on a substrate that include interconnected conductive wiring and vias spaced apart by a combination of solid or gaseous dielectrics. The inventive method includes the steps of: (a) forming a first planar via plus line level pair embedded in a dielectric matrix formed from one or more solid dielectrics and comprising a via level dielectric and a line level dielectric on a substrate, wherein, at least one of said solid dielectrics is at least partially sacrificial; (b) etching back sacrificial portions of said at least partially sacrificial dielectrics are removed to leave cavities extending into and through said via level, while leaving, at least some of the original via level dielectric as a permanent dielectric under said lines; (c) partially filling or overfilling said cavities with a place-holder material which may or may not be sacrificial; (d) planarizing the structure by removing overfill of said place-holder material; (e) repeating, as necessary, steps (a)-(d); (f) forming a dielectric bridge layer over the planar structure; and (g) forming air gaps by at least partially extracting said place-holder material.

    摘要翻译： 一种在衬底上形成多层互连结构的方法，其包括互连的导电布线和通过固体或气体电介质的组合间隔开的通孔。 本发明的方法包括以下步骤：（a）形成嵌入在由一个或多个固体电介质形成的电介质矩阵中并且包括通孔层电介质和衬底上的线路电介质的介电矩阵中的第一平面通孔加线电平对，其中，在 至少一个所述固体电介质至少部分地是牺牲的; （b）蚀刻所述至少部分牺牲电介质的牺牲部分被去除以留下延伸进入并穿过所述通孔级的空腔，同时留下至少一些原始通孔级电介质作为所述线下的永久电介质; （c）用可能牺牲或可能不是牺牲的位置保持材料部分填充或过度填充所述空腔; （d）通过去除所述位置保持器材料的过量填充来平坦化结构; （e）必要时重复步骤（a） - （d）; （f）在所述平面结构上形成电介质桥接层; 和（g）通过至少部分地提取所述放置支架材料形成气隙。

    Interconnect structure with precise conductor resistance and method to form same
    52.
    发明授权
    Interconnect structure with precise conductor resistance and method to form same 有权
    具有精确导体电阻的互连结构和形成相同的方法

    公开(公告)号：US06710450B2

    公开(公告)日：2004-03-23

    申请号：US09795430

    申请日：2001-02-28

    申请人： Stephen McConnell Gates ,  Jeffrey Curtis Hedrick ,  Satyanarayana V. Nitta ,  Sampath Purushothaman ,  Cristy Sensenich Tyberg

    发明人： Stephen McConnell Gates ,  Jeffrey Curtis Hedrick ,  Satyanarayana V. Nitta ,  Sampath Purushothaman ,  Cristy Sensenich Tyberg

    IPC分类号： H01L23532

    CPC分类号： H01L21/76835 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/76811 ,  H01L21/7684

    摘要： An interconnect structure including a patterned multilayer of spun-on dielectrics as well as methods for manufacturing the same are provided. The interconnect structure includes a patterned multilayer of spun-on dielectrics formed on a surface of a substrate. The patterned multilayer of spun-on dielectrics is composed of a bottom low-k dielectric, a buried etch stop layer, and a top low-k dielectric, wherein the bottom and top low-k dielectrics have a first composition, the said buried etch stop layer has a second composition which is different from the first composition and the buried etch stop layer is covalently bonded to said top and bottom low-k dielectrics. The interconnect structure further includes a polish stop layer formed on the patterned multilayer of spun-on dielectrics; and metal conductive regions formed within the patterned multilayer of spun-on dielectrics. Covalent bonding is achieved by employing an organosilane having functional groups that are capable of bonding with the top and bottom dielectric layers.

    摘要翻译： 提供了包括旋涂电介质的图案化多层的互连结构及其制造方法。 互连结构包括形成在衬底的表面上的旋涂电介质的图案化多层。 旋涂电介质的图案化多层由底部低k电介质，掩埋蚀刻停止层和顶部低k电介质组成，其中底部和顶部低k电介质具有第一组成，所述掩埋蚀刻 停止层具有与第一组成不同的第二组成，并且掩埋蚀刻停止层共价键合到所述顶部和底部低k电介质。 互连结构还包括形成在旋涂电介质的图案化多层上的抛光停止层; 以及形成在旋涂电介质的图案化多层中的金属导电区域。 通过使用具有能够与顶部和底部电介质层结合的官能团的有机硅烷来实现共价键合。

    Sputter deposition of hydrogenated amorphous carbon film and applications thereof
    57.
    发明授权
    Sputter deposition of hydrogenated amorphous carbon film and applications thereof 失效
    氢化无定形碳膜的溅射沉积及其应用

    公开(公告)号：US5830332A

    公开(公告)日：1998-11-03

    申请号：US781080

    申请日：1997-01-09

    申请人： Edward D. Babich ,  Alessandro Cesare Callegari ,  Fuad Elias Doany ,  Sampath Purushothaman

    发明人： Edward D. Babich ,  Alessandro Cesare Callegari ,  Fuad Elias Doany ,  Sampath Purushothaman

    IPC分类号： C23C14/06 ,  C23C14/34 ,  G02B1/10 ,  G03F1/00 ,  G03F1/26 ,  G03F1/32 ,  G03F1/34 ,  H01L21/205

    CPC分类号： G03F1/32 ,  C23C14/0605 ,  G03F1/26 ,  G03F1/34

    摘要： The present invention relates to a method of reactive sputtering for depositing an amorphous hydrogenated carbon film (a-C:H) from an argon/hydrocarbon/hydrogen/oxygen plasma, preferably an Ar/acetylene-helium/hydrogen/oxygen plasma. Such films are optically transparent in the visible range and partially absorbing at ultraviolet (UV) and deep UV (DUV) wavelengths, in particular, 365, and 248, 193 nm. Moreover, the films produced by the present invention are amorphous, hard, scratch resistant, and etchable by excimer laser ablation or by oxygen reactive ion etch process. Because of these unique properties, these films can be used to form a patterned absorber for UV and DUV single layer attenuated phase shift masks. Film absorption can also be increased such that these films can be used to fabricate conventional photolithographic shadow masks.

    摘要翻译： 本发明涉及一种用于从氩/烃/氢/氧等离子体，优选Ar /乙炔 - 氦/氢/氧等离子体沉积无定形氢化碳膜（a-C：H）的反应溅射方法。 这种膜在可见光范围内是光学透明的，并且在紫外（UV）和深紫外（DUV）波长，特别是365和248,193nm处部分吸收。 此外，本发明生产的薄膜是非晶的，硬的，耐划伤的，并且可以通过准分子激光烧蚀或通过氧反应离子蚀刻工艺进行蚀刻。 由于这些独特的性质，这些膜可用于形成用于UV和DUV单层衰减相移掩模的图案化吸收体。 也可以增加膜吸收，使得这些膜可用于制造常规光刻阴影掩模。

    Adhesive layer in multi-level packaging and organic material as a metal diffusion barrier
    58.
    发明授权
    Adhesive layer in multi-level packaging and organic material as a metal diffusion barrier 失效
    多层包装中的粘合层和有机材料作为金属扩散屏障

    公开(公告)号：US5599582A

    公开(公告)日：1997-02-04

    申请号：US475412

    申请日：1995-06-07

    申请人： Eleftherios Adamopoulos ,  Jungihl Kim ,  Kang-Wook Lee ,  Tae S. Oh ,  Terrence R. O'Toole ,  Sampath Purushothaman ,  John J. Ritsko ,  Jane M. Shaw ,  Alfred Viehbeck ,  George F. Walker

    发明人： Eleftherios Adamopoulos ,  Jungihl Kim ,  Kang-Wook Lee ,  Tae S. Oh ,  Terrence R. O'Toole ,  Sampath Purushothaman ,  John J. Ritsko ,  Jane M. Shaw ,  Alfred Viehbeck ,  George F. Walker

    IPC分类号： B32B7/10 ,  B32B15/08 ,  B32B15/088 ,  B32B27/00 ,  C08G73/00 ,  C08G73/10 ,  H01B3/30 ,  H01L21/52 ,  H05K1/03 ,  H05K3/46 ,  B05D5/10

    CPC分类号： C08G73/1089 ,  C08G73/1003 ,  C08G73/1007 ,  C08G73/101 ,  H01B3/306 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/31721

    摘要： The disclosure describes a multilayer article of manufacture comprising a substrate having adhered to it a terminally unsaturated adhesive polyimide, where the surface of the adhesive opposite the substrate is adhered to a polyimide, the article further characterized in having one set or a plurality of alternating layers of the terminally unsaturated adhesive polyimide and the polyimide. In another embodiment, the article has at least one adhesive polyimide layer adhered to a metal substrate or an electrical circuit component such as an integrated circuit, or means for forming electrical connections in an electrical circuit such as metal conduits on the circuit or a wiring network embedded within a ceramic and/or polymer substrate. A novel adhesive polyimide is also described which is an adhesive polyimide such as ODPA-APB terminated with unsaturated heterocyclic monoamines such as azaadenines, aminobenzotriazoles, aminopurines or aminopyrazolopyrimidines and optionally anhydrides, aminoacetylenes, vinylamines or amino phosphines. The novel polyimide may also contain unsaturated heterocyclic groups in the polymer backbone or chain, either as a partial or complete replacement for the aromatic diamines used in synthesizing the polyimide. This novel adhesive polyimide in this invention acts as an adhesive layer for the polymer-substrate (copper, polymer, glass ceramic) interface as well as a copper diffusion barrier layer for the polymer-copper interface.

    摘要翻译： 本公开描述了一种多层制品，其包括粘附到其上的末端不饱和粘合聚酰亚胺的基底，其中与基底相对的粘合剂的表面粘附到聚酰亚胺上，该制品进一步的特征在于具有一组或多个交替层 的末端不饱和粘合聚酰亚胺和聚酰亚胺。 在另一个实施方案中，制品具有粘附到金属基底或诸如集成电路的电路部件的至少一个粘合聚酰亚胺层，或用于在电路中形成电连接的装置，例如电路上的金属管道或布线网络 嵌入在陶瓷和/或聚合物基材内。 还描述了一种新型粘合聚酰亚胺，其是粘合聚酰亚胺，例如用不饱和杂环单胺如氮杂腺嘌呤，氨基苯并三唑，氨基嘌呤或氨基吡唑并嘧啶和任选的酸酐，氨基乙炔，乙烯胺或氨基膦封端的ODPA-APB。 新型聚酰亚胺还可以在聚合物主链或链中含有不饱和杂环基团，作为用于合成聚酰亚胺的芳族二胺的部分或完全替代物。 本发明中的这种新型粘合聚酰亚胺作为聚合物基材（铜，聚合物，玻璃陶瓷）界面的粘合剂层以及用于聚合物 - 铜界面的铜扩散阻挡层。

    Method for producing metal powder with a uniform distribution of dispersants, method of uses thereof and structures fabricated therewith
    60.
    发明授权
    Method for producing metal powder with a uniform distribution of dispersants, method of uses thereof and structures fabricated therewith 失效
    具有分散剂分布均匀的金属粉末的方法，其使用方法和用其制造的结构

    公开(公告)号：US5296189A

    公开(公告)日：1994-03-22

    申请号：US874901

    申请日：1992-04-28

    申请人： Sung K. Kang ,  Sampath Purushothaman ,  John J. Ritsko ,  Jane M. Shaw ,  Subhash L. Shinde

    发明人： Sung K. Kang ,  Sampath Purushothaman ,  John J. Ritsko ,  Jane M. Shaw ,  Subhash L. Shinde

    IPC分类号： B01F3/18 ,  B22F1/00 ,  B22F9/04 ,  C22C1/10 ,  H05K1/09 ,  B22F7/00

    CPC分类号： H05K1/092 ,  B22F9/04 ,  C22C1/1084 ,  B22F2009/043 ,  B22F2999/00

    摘要： Methods of fabricating powders of metal particles containing grain growth control additives are described. A powder, metal particles, e.g., copper particles, are mixed with a powder of additive particles, e.g., alumina particles. The mixture is milled in a high energy ball mill to provide metal particles having substantially uniformly distributed therein of additive particles. The ball milled powder contains elongated high aspect ratio particles. The high aspect ratio particles are reduced in size by jet impact milling. The jet impact milled powder can be used to form a conductor forming paste in the fabrication of a metallized ceramic substrate for semiconductor chip packaging application. The jet impact milled powder has particles of sufficiently small in size to fill vias between metallization layers in the green ceramic precursor to the ceramic substrate. During sintering of the combination of ceramic precursor and conductor forming paste, the grain growth control additive results in a substantially void free via filled with metal having a fine grain morphology.

    摘要翻译： 描述了制备含有晶粒生长控制添加剂的金属颗粒粉末的方法。 将粉末，金属颗粒（例如铜颗粒）与添加剂颗粒如氧化铝颗粒的粉末混合。 将混合物在高能球磨机中研磨，以提供基本均匀分布有添加剂颗粒的金属颗粒。 球磨粉末含有细长的高纵横比颗粒。 通过喷射冲击研磨，高纵横比颗粒的尺寸减小。 喷射冲击研磨粉末可用于在制造用于半导体芯片封装应用的金属化陶瓷衬底的过程中形成导体形成膏。 喷射冲击研磨的粉末具有足够小的颗粒，以在陶瓷衬底的生坯陶瓷前体中的金属化层之间填充通孔。 在烧结陶瓷前体和导体形成浆料的组合期间，晶粒生长控制添加剂导致填充有具有细晶粒形态的金属的基本上无空隙的通孔。