公开(公告)号：US20180358105A1

公开(公告)日：2018-12-13

申请号：US15781836

申请日：2017-04-14

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: G11C19/14 ,  G11C11/54 ,  G11C11/16 ,  H01L43/02 ,  G11C11/56 ,  G11C27/00 ,  H01L27/22

Abstract: A magnetic wall utilization spin MOSFET includes a magnetic wall driving layer including a magnetic wall, a first region, a second region, and a third region located between the first region and the second region, a channel layer, a magnetization free layer provided at a first end portion of a first surface of the channel layer, and arranged so as to be in contact with the third region of the magnetic wall driving layer, a magnetization fixed layer provided at a second end portion opposite to the first end portion, and a gate electrode provided between the first end portion and the second end portion of the channel layer through a gate insulating layer.

公开(公告)号：US20180351085A1

公开(公告)日：2018-12-06

申请号：US15778577

申请日：2016-11-25

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA ,  Tomoyuki SASAKI

IPC: H01L43/06 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/14

Abstract: A spin current magnetization reversal element includes: a first ferromagnetic metal layer with a changeable magnetization direction; and a spin-orbit torque wiring, wherein a first direction is perpendicular to a surface of the layer, the wiring extends in a second direction intersecting the first and is bonded to the layer, wherein the wiring material is a binary alloy represented by the formula AxB1-x, a metal carbide, or metal nitride, wherein A is selected from Al, Ti, and Pt, and B is selected from Al, Cr, Mn, Fe, Co, Ni, Y, Ru, Rh, and Ir and the material has a cubic structure with symmetry of a space group Pm-3m or Fd-3m; or A is selected from Al, Si, Ti, Y, and Ta, and B is selected from C, N, Co, Pt, Au, and Bi and the material has a cubic structure with symmetry of a space group Fm-3m.

公开(公告)号：US20180351084A1

公开(公告)日：2018-12-06

申请号：US15778174

申请日：2016-11-25

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: H01L43/06 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/14

CPC classification number: H01L43/02 ,  G11B5/39 ,  G11C11/161 ,  H01L27/105 ,  H01L27/222 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10 ,  H03B15/00

Abstract: This spin current magnetization rotational magnetoresistance effect element includes a substrate, a magnetoresistance effect element having a first ferromagnetic metal layer in which a direction of magnetization is fixed, a nonmagnetic layer, a second ferromagnetic metal layer configured for a direction of magnetization to be changed, and a cap layer in that order from the substrate side, and a spin-orbit torque wiring extending in a direction intersecting a lamination direction of the magnetoresistance effect element and joined to the cap layer, in which the cap layer includes one or more substances having high spin conductivity selected from the group consisting of Cu, Ag, Mg, Al, Si, Ge, and GaAs as a major component.

公开(公告)号：US20180351082A1

公开(公告)日：2018-12-06

申请号：US15777884

申请日：2016-11-25

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Tohru OIKAWA

IPC: H01L43/06 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/14

CPC classification number: H01L43/02 ,  G11B5/39 ,  G11C11/161 ,  H01L27/105 ,  H01L27/222 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10 ,  H03B15/00

Abstract: This spin current magnetization rotational element includes a second ferromagnetic metal layer having a variable magnetization orientation, and spin-orbit torque wiring, which extends in a direction that intersects a direction perpendicular to the surface of the second ferromagnetic metal layer, and is connected to the second ferromagnetic metal layer, wherein the spin resistance of a connection portion of the spin-orbit torque wiring that is connected to the second ferromagnetic metal layer is larger than the spin resistance of the second ferromagnetic metal layer.

公开(公告)号：US20180350432A1

公开(公告)日：2018-12-06

申请号：US16060042

申请日：2017-04-14

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: G11C11/56 ,  H01L43/02 ,  G11C11/16 ,  H01L27/22 ,  H01F10/32 ,  H03K19/18 ,  G11C11/54

CPC classification number: G11C11/5607 ,  G06N3/0635 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/54 ,  G11C27/00 ,  G11C2211/5615 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H03K19/18

Abstract: A magnetic wall utilization-analog memory element includes a magnetic wall driving layer including a magnetic wall, a first region, a second region, and a third region located between the first region and the second region, a magnetization fixed layer provided at a the third region through a nonmagnetic layer, and a lower electrode layer provided at a position in the third region that overlaps the magnetization fixed layer in plan view on a second surface opposite to a first surface on which the magnetization fixed layer is provided.

公开(公告)号：US20180254773A1

公开(公告)日：2018-09-06

申请号：US15891759

申请日：2018-02-08

Applicant: TDK CORPORATION

Inventor： Jiro YOSHINARI ,  Tomoyuki SASAKI ,  Yohei SHIOKAWA

IPC: H03K3/84 ,  H01F10/32 ,  H01L43/08 ,  H01L43/04 ,  G06F7/58

CPC classification number: H03K3/84 ,  G06F7/588 ,  G06N3/0635 ,  G06N10/00 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/22 ,  H01L43/04 ,  H01L43/08 ,  H04L9/0852

Abstract: A random number generator capable of generating a natural random number using a spin-orbit torque (SOT) is provided. The random number generator includes a ferromagnetic metal layer and a spin-orbit torque wiring extending in a first direction crossing a lamination direction of the ferromagnetic metal layer and being joined to the ferromagnetic metal layer, wherein the direction of spins injected from the spin-orbit torque wiring into the ferromagnetic metal layer and an easy magnetization direction of the ferromagnetic metal layer intersect each other.

公开(公告)号：US20180090670A1

公开(公告)日：2018-03-29

申请号：US15716094

申请日：2017-09-26

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/08 ,  G11C11/16

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetoresistance effect element has favorable symmetry of an MR ratio even if the sign of a bias voltage is different, which is capable of reversing magnetization to a current, which has a high MR ratio. A magnetoresistance effect element includes a laminate in which an underlayer, a first ferromagnetic metal layer, a tunnel barrier layer, and a second ferromagnetic metal layer are laminated in that order, wherein the underlayer is made of one or more selected from a group containing of TiN, VN, NbN, and TaN, or mixed crystals thereof, and wherein the tunnel barrier layer is made of a compound having a spinel structure and represented by the following composition formula (1). (1): AxGa2Oy where A is a non-magnetic divalent cation and represents a cation of at least one element selected from the group consisting of magnesium, zinc, and cadmium, x is a number that satisfies 0

公开(公告)号：US20180068681A1

公开(公告)日：2018-03-08

申请号：US15554410

申请日：2016-03-28

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: G11B5/39 ,  G11C11/16 ,  H01F10/193 ,  H01L27/22

CPC classification number: G11B5/3909 ,  G11B5/39 ,  G11B2005/3996 ,  G11C11/161 ,  H01F1/405 ,  H01F10/1936 ,  H01L27/105 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a chemical formula of AB2Ox, and has a spinel structure in which cations are arranged in a disordered manner, A represents a divalent cation that is either Mg or Zn, and B represents a trivalent cation that includes a plurality of elements selected from the group consisting of Al, Ga, and In.

公开(公告)号：US20170229163A1

公开(公告)日：2017-08-10

申请号：US15421117

申请日：2017-01-31

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: G11C11/16 ,  H01L43/08 ,  H01L27/22 ,  H01L43/02

CPC classification number: G11C11/1695 ,  G11C7/04 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L28/00 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic memory includes: a magnetoresistance element; a conductive portion that is laminated on the magnetoresistance element; and a control portion configured to determine a driving temperature of the magnetoresistance element based on a change in a resistance value of the conductive portion and to control the amount of current applied to the magnetoresistance element.

公开(公告)号：US20150035524A1

公开(公告)日：2015-02-05

申请号：US14341378

申请日：2014-07-25

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Tohru OIKAWA

IPC: G01R33/02

CPC classification number: G01R33/093 ,  G01R33/1269 ,  G01R33/1284 ,  G11B5/3909 ,  G11B2005/3996

Abstract: A magnetic sensor includes a channel layer, a magnetization free layer placed on a first section of the channel layer, and a magnetization-fixed layer placed on a second section of the channel layer. A thickness of the channel layer of the first section is different from a thickness of the channel layer of the second section and a resistance of an interface between the channel layer and the magnetization free layer is lower than a resistance of an interface between the channel layer and the magnetization-fixed layer.

Abstract translation: 磁传感器包括沟道层，放置在沟道层的第一部分上的无磁化层和放置在沟道层的第二部分上的磁化固定层。 第一部分的沟道层的厚度不同于第二部分的沟道层的厚度，并且沟道层和无磁化层之间的界面的电阻低于沟道层之间的界面的电阻 和磁化固定层。