Metal bumps and method forming same

    公开(公告)号:US12230595B2

    公开(公告)日:2025-02-18

    申请号:US17333187

    申请日:2021-05-28

    Abstract: A method of forming an integrated circuit structure includes forming a patterned passivation layer over a metal pad, with a top surface of the metal pad revealed through a first opening in the patterned passivation layer, and applying a polymer layer over the patterned passivation layer. The polymer layer is substantially free from N-Methyl-2-pyrrolidone (NMP), and comprises aliphatic amide as a solvent. The method further includes performing a light-exposure process on the polymer layer, performing a development process on the polymer layer to form a second opening in the polymer layer, wherein the top surface of the metal pad is revealed to the second opening, baking the polymer, and forming a conductive region having a via portion extending into the second opening.

    PROCESS FOR TUNING VIA PROFILE IN DIELECTRIC MATERIAL

    公开(公告)号:US20240371915A1

    公开(公告)日:2024-11-07

    申请号:US18777699

    申请日:2024-07-19

    Abstract: A method of forming an integrated circuit structure includes forming a first magnetic layer, forming a first conductive line over the first magnetic layer, and coating a photo-sensitive coating on the first magnetic layer. The photo-sensitive coating includes a first portion directly over the first conductive line, and a second portion offset from the first conductive line. The first portion is joined to the second portion. The method further includes performing a first light-exposure on the first portion of the photo-sensitive coating, performing a second light-exposure on both the first portion and the second portion of the photo-sensitive coating, developing the photo-sensitive coating, and forming a second magnetic layer over the photo-sensitive coating.

    Process for tuning via profile in dielectric material

    公开(公告)号:US11532692B2

    公开(公告)日:2022-12-20

    申请号:US17140766

    申请日:2021-01-04

    Abstract: A method of forming an integrated circuit structure includes forming a first magnetic layer, forming a first conductive line over the first magnetic layer, and coating a photo-sensitive coating on the first magnetic layer. The photo-sensitive coating includes a first portion directly over the first conductive line, and a second portion offset from the first conductive line. The first portion is joined to the second portion. The method further includes performing a first light-exposure on the first portion of the photo-sensitive coating, performing a second light-exposure on both the first portion and the second portion of the photo-sensitive coating, developing the photo-sensitive coating, and forming a second magnetic layer over the photo-sensitive coating.

    Heterogeneous Bonding Structure and Method Forming Same

    公开(公告)号:US20220238353A1

    公开(公告)日:2022-07-28

    申请号:US17220339

    申请日:2021-04-01

    Abstract: A method includes forming a first package component, which formation process includes forming a first plurality of openings in a first dielectric layer, depositing a first metallic material into the first plurality of openings, performing a planarization process on the first metallic material and the first dielectric layer to form a plurality of metal pads in the first dielectric layer, and selectively depositing a second metallic material on the plurality of metal pads to form a plurality of bond pads. The first plurality of bond pads comprise the plurality of metal pads and corresponding parts of the second metallic material. The first package component is bonded to a second package component.

    Package structure and method of fabricating the same

    公开(公告)号:US11244919B2

    公开(公告)日:2022-02-08

    申请号:US16367273

    申请日:2019-03-28

    Abstract: A package structure is provided comprising a die, a redistribution layer, at least one integrated passive device (IPD), a plurality of solder balls and a molding compound. The die comprises a substrate and a plurality of conductive pads. The redistribution layer is disposed on the die, wherein the redistribution layer comprises first connection structures and second connection structures. The IPD is disposed on the redistribution layer, wherein the IPD is connected to the first connection structures of the redistribution layer. The plurality of solder balls is disposed on the redistribution layer, wherein the solder balls are disposed and connected to the second connection structures of the redistribution layer. The molding compound is disposed on the redistribution layer, and partially encapsulating the IPD and the plurality of solder balls, wherein top portions of the solder balls and a top surface of the IPD are exposed from the molding compound.

    Display device and manufacturing method thereof

    公开(公告)号:US11239305B2

    公开(公告)日:2022-02-01

    申请号:US16866519

    申请日:2020-05-04

    Abstract: A display device includes a semiconductor substrate, an isolation layer, a light-emitting layer and a second electrode. The semiconductor substrate has a pixel region and a peripheral region located around the pixel region. The semiconductor substrate includes first electrodes and a driving element layer. The first electrodes are disposed in the pixel region and the first electrodes are electrically connected to the driving element layer. The isolation layer is disposed on the semiconductor substrate. The isolation layer includes a first isolation pattern disposed in the peripheral region, and the first isolation pattern has a first side surface and a second side surface opposite to the first side surface. The light-emitting layer is disposed on the isolation layer and the first electrodes, and covers the first side surface and the second side surface of the first isolation pattern. The second electrode is disposed on the light-emitting layer.

    Wafer Level Package Structure and Method of Forming Same

    公开(公告)号:US20210351076A1

    公开(公告)日:2021-11-11

    申请号:US17379775

    申请日:2021-07-19

    Abstract: An embodiment is a package including a first package component. The first package component including a first die attached to a first side of a first interconnect structure, a molding material surrounding the first die, and a second interconnect structure over the molding material and the first die, a first side of the second interconnect structure coupled to the first die with first electrical connectors. The first package component further includes a plurality of through molding vias (TMVs) extending through the molding material, the plurality of TMVs coupling the first interconnect structure to the second interconnect structure, and a second die attached to a second side of the second interconnect structure with second electrical connectors, the second side of the second interconnect structure being opposite the first side of the second interconnect structure.

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