Charged particle beam system and pattern slant observing method
    52.
    发明授权
    Charged particle beam system and pattern slant observing method 失效
    带电粒子束系统和模式倾斜观测方法

    公开(公告)号:US06534766B2

    公开(公告)日:2003-03-18

    申请号:US09816468

    申请日:2001-03-26

    IPC分类号: H01J3726

    摘要: A charged particle beam system comprising a charged beam source, a condenser lens, a scanning deflecting device, an objective lens and a secondary electron detector further comprises a slant observing deflecting device arranged between the objective lens and a sample. The slant observing deflecting device deflects charged particle beams immediately before the surface of the sample, to cause the charged particle beams to be slantingly incident on the sample. The deflection angle of the charged particle beams is controlled by a DC current component which is inputted to the slant observing deflecting device. The irradiation position shift of the charged particle beams due to the slant deflection is corrected and controlled by feeding an input value of the slant observing deflecting device and the slant angle of the charged particle beams back to the input value of the scanning deflecting device.

    摘要翻译: 包括充电束源,聚光透镜,扫描偏转装置,物镜和二次电子检测器的带电粒子束系统还包括布置在物镜和样品之间的倾斜观察偏转装置。 倾斜的观察偏转装置在样品表面之前使带电粒子束偏转,使带电粒子束倾斜入射到样品上。 带电粒子束的偏转角由输入到倾斜观测偏转装置的直流电流分量控制。 通过将倾斜观察偏转装置的输入值和带电粒子束的倾斜角反馈回到扫描偏转装置的输入值来校正和控制由于倾斜偏转引起的带电粒子束的照射位置偏移。

    Charged beam drawing apparatus
    53.
    发明授权
    Charged beam drawing apparatus 失效
    充电光束拉制装置

    公开(公告)号:US06495841B1

    公开(公告)日:2002-12-17

    申请号:US09299145

    申请日:1999-04-26

    IPC分类号: H01J37317

    摘要: In an electron beam drawing apparatus including an objective lens for focusing an electron beam emitted from an electron gun on a sample surface and an objective deflector for controlling the position of the electron beam on the sample surface, an objective driving mechanism for mechanically moving the objective lens and objective deflector in a plane perpendicular to the optical axis of the electron beam is provided and an optical axis shifting deflector arranged nearer to the electron gun than the objective lens and objective deflector, for deflecting the electron beam in synchronism with the operation of the objective lens and objective deflector is provided.

    摘要翻译: 在包括用于将从电子枪发射的电子束聚焦在样品表面上的物镜和用于控制电子束在样品表面上的位置的物镜偏转器的电子束描绘装置中,用于机械地移动物镜的物镜驱动机构 提供了与电子束的光轴垂直的平面中的透镜和物镜偏转器,并且与物镜和物镜偏转器相比更靠近电子枪布置的光轴移动偏转器,用于与电子束的操作同步地偏转 提供物镜和物镜偏转器。

    Charged beam exposure method
    54.
    发明授权
    Charged beam exposure method 失效
    带电束曝光方法

    公开(公告)号:US06376136B1

    公开(公告)日:2002-04-23

    申请号:US09465932

    申请日:1999-12-17

    IPC分类号: G03F900

    摘要: A charged beam exposing method comprises a step of applying a voltage to a sample to thereby form an acceleration electric field on the sample, a step of accelerating an electron beam emitted from an electron gun and scanning an alignment mark formed on the sample with the electron beam, a step of detecting back-scattered electrons and secondary electrons, generated from the alignment mark, by means of a detector, a step of acquiring the position of the alignment mark based on a signal waveform detected, a step of eliminating or reducing the acceleration electric field by changing the applied voltage to the sample, and a step of exposing a pattern with the electron beam emitted from the electron gun based on information of the position of the alignment mark.

    摘要翻译: 带电束曝光方法包括对样品施加电压从而在样品上形成加速电场的步骤,加速从电子枪发射的电子束并用电子扫描样品上形成的对准标记的步骤 通过检测器检测从对准标记产生的反向散射电子和二次电子的步骤,基于检测到的信号波形获取对准标记的位置的步骤,消除或减少对准标记的步骤 通过改变向样品施加的电压的加速电场,以及基于对准标记的位置的信息,用电子枪发射的电子束曝光图案的步骤。

    Information recording and reproducing apparatus having an improved high frequency characteristic for a reproduction signal
    55.
    发明授权
    Information recording and reproducing apparatus having an improved high frequency characteristic for a reproduction signal 失效
    信息记录和再现装置具有用于再现信号的改进的高频特性

    公开(公告)号:US06181501B2

    公开(公告)日:2001-01-30

    申请号:US08992558

    申请日:1997-12-17

    申请人: Yuichiro Yamazaki

    发明人: Yuichiro Yamazaki

    IPC分类号: G11B502

    CPC分类号: G11B20/02 G11B5/012 G11B5/09

    摘要: A magnetic recording and reproducing apparatus having a reproducing circuit structure which improves a high frequency characteristic of a reproduction signal output from a read head. The read head reads information recorded on a recording medium. A first amplifying circuit amplifies a reproduction signal generated by the read head. A second amplifying circuit, which comprises a high-frequency amplifying circuit, amplifies the reproduction signal amplified by the first amplifying circuit in a high-frequency amplifying manner. The first amplifying circuit and the second amplifying circuit together constitute a cascode amplifier. A third amplifying circuit amplifies the reproduction signal amplified by the second amplifying circuit. A reproducing circuit reproduces the reproduction signal amplified by the third amplifying circuit.

    摘要翻译: 一种磁记录和再现装置,具有改善从读头输出的再现信号的高频特性的再现电路结构。 读取头读取记录在记录介质上的信息。 第一放大电路放大由读取头产生的再现信号。 包括高频放大电路的第二放大电路以高频放大方式放大由第一放大电路放大的再现信号。 第一放大电路和第二放大电路一起构成共源共栅放大器。 第三放大电路放大由第二放大电路放大的再现信号。 再现电路再现由第三放大电路放大的再现信号。

    Wafer pattern defect detection method and apparatus therefor
    56.
    发明授权
    Wafer pattern defect detection method and apparatus therefor 失效
    晶圆图案缺陷检测方法及其装置

    公开(公告)号:US5576833A

    公开(公告)日:1996-11-19

    申请号:US402486

    申请日:1995-03-10

    CPC分类号: G01N23/2251 H01J2237/2446

    摘要: A scanning electron beam is formed as a rectangular electron beam. The electro-optical system which forms this rectangular beam has a rectangular-cathode light source and a quadrupole lens system. This rectangular beam is scanned in its short-axis (X-axis) direction by a deflection system while a stage is moved in its long-axis (Y-axis) direction to achieve scanning of the surface of the wafer under inspection. The rectangular beam corresponds to a number of circular beams arranged in a row. Therefore, pixel signals corresponding to a number of pixels equal to the aspect ratio of the rectangular beam (ratio of the length in the long-axis direction to the length in the short-axis direction) are simultaneously output.

    摘要翻译: 扫描电子束形成为矩形电子束。 形成该矩形光束的电光系统具有矩形阴极光源和四极透镜系统。 这个矩形光束是通过偏转系统在其短轴(X轴)方向扫描的,同时一个台沿其长轴(Y轴)方向移动,以实现在检查晶片的表面的扫描。 矩形梁对应于排列成一排的多个圆形梁。 因此,同时输出与矩形光束的长宽比(长轴方向的长度与短轴方向的长度的比)相等的像素数的像素信号。

    Electrostatic lens
    57.
    发明授权
    Electrostatic lens 失效
    静电镜片

    公开(公告)号:US5293045A

    公开(公告)日:1994-03-08

    申请号:US988701

    申请日:1992-12-10

    IPC分类号: H01J37/02 H01J37/12

    CPC分类号: H01J37/12 H01J37/026

    摘要: An electrostatic lens having at least three electrodes and an insulating holder for holding the electrodes, the inner wall of the holder being coated with a silicone carbide film. The silicone carbide film may be formed by means of a vapor deposition method. The energy of an electron beam is set to 1.5 keV or lower. The silicone carbide film may be added with an additive for controlling the electric conductivity of the silicone carbide film. The additive may be nitrogen.

    摘要翻译: 具有至少三个电极的静电透镜和用于保持电极的绝缘保持器,保持器的内壁涂覆有碳化硅膜。 可以通过气相沉积法形成碳化硅膜。 电子束的能量设定为1.5keV以下。 可以向该碳化硅膜添加用于控制碳化硅膜的导电性的添加剂。 添加剂可以是氮气。

    PATTERN INSPECTION APPARATUS AND PATTERN INSPECTION METHOD
    58.
    发明申请
    PATTERN INSPECTION APPARATUS AND PATTERN INSPECTION METHOD 审中-公开
    图案检查装置和图案检查方法

    公开(公告)号:US20120242985A1

    公开(公告)日:2012-09-27

    申请号:US13418940

    申请日:2012-03-13

    IPC分类号: G01N21/55

    CPC分类号: G01N21/9501 G01N21/95607

    摘要: In accordance with an embodiment, a pattern inspection apparatus includes a stage supporting a substrate with a pattern, a light source irradiating the substrate with light, a detection unit, an optical system, a focus position change unit, a control unit, and a determination unit. The detection unit detects reflected light from the substrate. The optical system leads the light from the light source to the substrate and leads the reflected light to the detection unit. The focus position change unit changes a focus position of the light to the substrate in a direction vertical to the surface of the substrate. The control unit associates the movement of the stage with the light irradiation and controls the stage drive unit and the focus position change unit, thereby changing the focus position. The determination unit determines presence/absence of a defect of the pattern based on the signal from the determination unit.

    摘要翻译: 根据一个实施例,图案检查装置包括支撑具有图案的基板的台,用光照射基板的光源,检测单元,光学系统,聚焦位置改变单元,控制单元和确定 单元。 检测单元检测来自基板的反射光。 光学系统将来自光源的光引导到基板,并将反射光引导到检测单元。 聚焦位置改变单元将垂直于基底表面的方向的光的聚焦位置改变为基底。 控制单元使舞台的移动与光照射相关联,并且控制舞台驱动单元和对焦位置改变单元,从而改变对焦位置。 确定单元基于来自确定单元的信号来确定模式的缺陷的存在/不存在。

    Electron beam apparatus and an aberration correction optical apparatus
    60.
    发明授权
    Electron beam apparatus and an aberration correction optical apparatus 有权
    电子束装置和像差校正光学装置

    公开(公告)号:US07863580B2

    公开(公告)日:2011-01-04

    申请号:US11760235

    申请日:2007-06-08

    IPC分类号: G21K1/08 H01J3/14 H01J3/26

    摘要: An electron beam apparatus for providing an evaluation of a sample, such as a semiconductor wafer, that includes a micro-pattern with a minimum line width not greater than 0.1 μm with high throughput. A primary electron beam generated by an electron gun is irradiated onto a sample and secondary electrons emanating from the sample are formed into an image on a detector by an image projection optical system. An electron gun 61 has a cathode 1 and a drawing electrode 3, and an electron emission surface 1a of the cathode defines a concave surface. The drawing electrode 3 has a convex surface 3a composed of a partial outer surface of a second sphere facing the electron emission surface 1a of the cathode and an aperture 73 formed through the convex surface for passage of the electrons. An aberration correction optical apparatus comprises two identically sized multi-polar Wien filters arranged such that their centers are in alignment with a ¼ plane position and a ¾ plane position, respectively, along an object plane-image plane segment in the aberration correction optical apparatus, and optical elements having bidirectional focus disposed in an object plane position, an intermediate image-formation plane position and an image plane position, respectively, in the aberration correction optical apparatus.

    摘要翻译: 一种用于提供诸如半导体晶片的样品的评估的电子束装置,其包括具有不大于0.1μm的最小线宽的微图案,具有高生产量。 由电子枪产生的一次电子束照射在样品上,从样品发出的二次电子通过图像投影光学系统形成检测器上的图像。 电子枪61具有阴极1和牵伸电极3,阴极的电子发射表面1a限定凹面。 拉制电极3具有由与阴极的电子发射表面1a相对的第二球体的局部外表面和由电子通过凸面形成的孔73构成的凸面3a。 像差校正光学装置包括两个相同尺寸的多极维纳滤光器,其布置成使得它们的中心分别沿着像差校正光学装置中的物平面图像平面段与¼平面位置和¾平面位置对准, 以及分别设置在像差校正光学装置中的物平面位置,中间图像形成面位置和像面位置的具有双向焦点的光学元件。