Method of determining lethality of defects in circuit pattern inspection method of selecting defects to be reviewed and inspection system of circuit patterns involved with the methods

    公开(公告)号:US06334097B1

    公开(公告)日:2001-12-25

    申请号:US09225513

    申请日:1999-01-06

    IPC分类号: G06F1132

    摘要: From the coordinate data of defects detected on the circuit patterns, the areas where the defects belong are identified. The sizes of the defects detected are compared with the data to determine the lethality to thereby determine the lethality of the defects. Further, the severity of the defects is calculated from the sizes of the defects to thereby select the review object in the descending order of the severity. Thereby, when inspecting the circuit patterns on a semiconductor wafer or the like, the lethality of the defects can automatically be determined even though the review is not carried out, enhancing the efficiency of the inspection. To perform the review with efficiency, the defects to be reviewed are automatically selected, while the quality of the inspection itself is maintained.

    摘要翻译: 根据在电路图案上检测到的缺陷的坐标数据,识别缺陷所在的区域。 将检测到的缺陷的大小与数据进行比较以确定致死率,从而确定缺陷的致死率。 此外,根据缺陷的大小计算缺陷的严重性,从而以严重性的降序选择检查对象。因此,当检查半导体晶片等上的电路图案时,缺陷的致死性可以 即使不进行审查,自动确定,提高检查效率。 为了有效地进行审查,将自动选择要检查的缺陷,同时保持检查质量。

    Semiconductor device inspection and analysis method and its apparatus and a method for manufacturing a semiconductor device
    52.
    发明授权
    Semiconductor device inspection and analysis method and its apparatus and a method for manufacturing a semiconductor device 失效
    半导体装置检查分析方法及其装置及半导体装置的制造方法

    公开(公告)号:US06281024B1

    公开(公告)日:2001-08-28

    申请号:US09322149

    申请日:1999-05-28

    IPC分类号: H01L2100

    CPC分类号: H01L21/67253

    摘要: A method and system for inspecting and/or analyzing semiconductor devices in which particles in a semiconductor wafer which is processed in a semiconductor device manufacturing line are detected. A particle is selected from among the detected particles and the selected particle is etched to expose a cross section of the selected particle. The selected particle whose cross section is exposed has the element thereof analyzed, and after analyzation, the semiconductor wafer is continued to be processed in the semiconductor device manufacturing line. For etching, pattern data having an edge which intersects the selected particle is created and the semiconductor wafer which is coated with a photosensitive material is exposed by a light pattern according to the pattern data so that an edge intersects the selected particle. Thereafter, the etching is carried out to expose the cross section of the selected particle and analyzation is effected.

    摘要翻译: 检测和/或分析其中检测半导体器件制造线中处理的半导体晶片中的粒子的半导体器件的方法和系统。 从检测到的颗粒中选择颗粒,并蚀刻所选择的颗粒以暴露所选择的颗粒的横截面。 所选择的粒子的横截面被暴露,其元素被分析,并且在分析之后,半导体晶片在半导体器件制造线中继续被处理。 为了蚀刻,产生具有与所选粒子相交的边缘的图案数据,并且通过根据图案数据的光图案使被感光材料涂覆的半导体晶片曝光,使得边缘与所选择的粒子相交。 此后,进行蚀刻以暴露所选粒子的横截面并进行分析。

    Defect inspection system
    53.
    发明授权
    Defect inspection system 有权
    缺陷检查系统

    公开(公告)号:US08660336B2

    公开(公告)日:2014-02-25

    申请号:US13593227

    申请日:2012-08-23

    摘要: A defect inspection system is disclosed for easily setting inspection conditions and providing an inspection condition and a defect signal intensity to an operator. The defect inspection system digitizes a defective image, and a reference image corresponding thereto and a mismatched portion of the defective image and the reference image as a defect signal intensity and accumulates them in association with the inspection condition. The inspection conditions are changed to repeat evaluations while repeating accumulating works until the evaluation of all the inspection conditions in a set range is completed. A recipe file including the accumulated conditions having the high defect signal intensity and an inspection condition item distribution as a inspection condition recipe is automatically outputted and provided to the operator.

    摘要翻译: 公开了一种用于容易地设置检查条件并向操作者提供检查条件和缺陷信号强度的缺陷检查系统。 缺陷检查系统将缺陷图像,与其对应的参考图像和缺陷图像和参考图像的不匹配部分数字化为缺陷信号强度,并与检查条件相关联地累加它们。 更改检查条件以重复评估,同时重复累积工作,直到完成对设定范围内的所有检查条件的评估。 包括具有高缺陷信号强度的累积条件和作为检查条件配方的检查条件项目分配的配方文件被自动输出并提供给操作者。

    DEFECT INSPECTION DEVICE USING CATADIOPTRIC OBJECTIVE LENS
    55.
    发明申请
    DEFECT INSPECTION DEVICE USING CATADIOPTRIC OBJECTIVE LENS 有权
    使用CATADIOPTRIC目标镜头的缺陷检查装置

    公开(公告)号:US20120281207A1

    公开(公告)日:2012-11-08

    申请号:US12747949

    申请日:2008-12-19

    IPC分类号: G01N21/956

    摘要: A defect inspection device comprises an inspection optical system including a light source, a half mirror for reflecting illumination light emitted from the light source, a catadioptric objective lens for collecting reflected light from the sample by illumination light reflected by the half mirror, an imaging lens for focusing the reflected light transmitted through the catadioptric objective lens, a relay lens having a blocking member provided at a position at which specularly reflected light from the sample is focused by the imaging lens, and a detector for defecting the reflected light of the specularly deflected light blocked by the blocking member; and a computation processing unit for detecting defects of the sample on the basis of the signals detected by the detector.

    摘要翻译: 缺陷检查装置包括检查光学系统,包括光源,用于反射从光源发射的照明光的半反射镜,用于通过由半反射镜反射的照明光收集来自样品的反射光的反射折射物镜,成像透镜 为了聚焦透射反射折射物镜的反射光,具有阻挡构件的中继透镜,该阻挡构件设置在通过成像透镜聚焦的来自样品的镜面反射光的位置处,以及检测器,用于使镜面反射的反射光 阻挡构件阻挡光; 以及计算处理单元,用于基于由检测器检测到的信号来检测样本的缺陷。

    WAVEFRONT ABERRATION MEASURING METHOD AND DEVICE THEREFOR
    56.
    发明申请
    WAVEFRONT ABERRATION MEASURING METHOD AND DEVICE THEREFOR 有权
    WAVEFRONT ABERRATION测量方法及其设备

    公开(公告)号:US20120019813A1

    公开(公告)日:2012-01-26

    申请号:US13145212

    申请日:2010-01-22

    IPC分类号: G01J1/00

    CPC分类号: G01M11/0257 G01M11/0207

    摘要: Measurement cannot be made when trying to measure a wavefront aberration of a wide-angle lens, being wide in a field of view, comparing to a focus distance, by a Shack-Hartmann sensor, since an inclination of the wavefront exceeds an allowable value of inclination of the Shack-Hartmann sensor.The Shack-Hartmann sensor is inclined at a position of a pupil of a lens, and is controlled so that it lies within the allowable value mentioned above. Photographing is made through step & repeat while overlapping at the same position, to compose in such a manner that overlapping spots are piled up, and thereby measuring the wavefront aberration of the lens having a large pupil diameter.

    摘要翻译: 当通过Shack-Hartmann传感器测量广角镜头的波前像差(与视场相比宽的焦点距离)时,不能进行测量,因为波前的倾斜度超过了允许值 Shack-Hartmann传感器的倾角。 Shack-Hartmann传感器在透镜的瞳孔的位置处倾斜,并被控制成使其位于上述容许值内。 通过步骤重复进行拍摄,同时在相同位置重叠,以这样的方式组合,使得重叠的斑点堆积,从而测量具有大瞳孔直径的透镜的波前像差。

    Defect inspection system
    57.
    发明授权
    Defect inspection system 有权
    缺陷检查系统

    公开(公告)号:US07881520B2

    公开(公告)日:2011-02-01

    申请号:US11501815

    申请日:2006-08-10

    IPC分类号: G06K9/00 G01R31/26 G01N21/00

    摘要: The present invention relates to a defect inspection system which can perform inspection condition setting easily in a relatively short period of time, can examine the inspection condition setting even when there is no sample, and further can provide an inspection condition and a defect signal intensity to a person, who sets the inspection condition, to assist the inspection condition setting. In the defect inspection system, a defective image, which is an inspection image, and a reference image corresponding thereto and a mismatched portion of the defective image and the reference image are digitalized as a defect signal intensity and accumulated in association with the inspection condition, and the inspection conditions are changed to repeat evaluations while repeating accumulating works until the evaluation of all the inspection conditions in a set range is completed. After all the evaluations are completed, if there are a plurality of defects to be inspected, the work is repeated by times corresponding to the number of kinds of the defects and a recipe file including the accumulated conditions having the high defect signal intensity and an inspection condition item distribution as a inspection condition recipe is automatically outputted and is provided to the person who sets the inspection condition. And, appearance inspection for detecting a pattern defect or a foreign material defect on a substrate is performed.

    摘要翻译: 本发明涉及一种能够在较短时间内容易进行检查条件设定的缺陷检查系统,即使没有样本也能够检查检查条件设定,并且还可以提供检查条件和缺陷信号强度 设定检查条件的人员,以协助检查条件设定。 在缺陷检查系统中,作为检查图像的缺陷图像和与其对应的参考图像和缺陷图像和参考图像的不匹配部分被数字化为缺陷信号强度并且与检查条件相关联地累积, 并且在重复累积工作的同时改变检查条件以重复评估,直到完成对设定范围内的所有检查条件的评估。 在完成所有评估之后,如果存在多个待检查的缺陷,则对与缺陷的种类数量相对应的次数和包括具有高缺陷信号强度和检查的累积条件的配方文件重复工作 条件项目分配作为检查条件配方自动输出,并提供给设置检查条件的人员。 并且,进行用于检测基板上的图案缺陷或异物缺陷的外观检查。

    METHOD OF MEASURING PATTERN SHAPE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND PROCESS CONTROL SYSTEM
    58.
    发明申请
    METHOD OF MEASURING PATTERN SHAPE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND PROCESS CONTROL SYSTEM 有权
    测量图形的方法,制造半导体器件的方法和工艺控制系统

    公开(公告)号:US20110020956A1

    公开(公告)日:2011-01-27

    申请号:US12823024

    申请日:2010-06-24

    IPC分类号: H01L21/66 G01B11/24

    摘要: A method of measuring a pattern shape of performing a shape measurement of a semiconductor pattern at a high accuracy even when a process margin is narrow with respect to miniaturization of a semiconductor device is provided. In the method of measuring a pattern shape, when a best-match calculated waveform cannot be selected, at least one parameter among shape parameters is set as a fixed value based on information obtained by another measurement apparatus that uses a measurement method independent to the pattern shape measurement, a matching of a library and a detected waveform is performed again, a best-match calculated waveform is selected, and shape information of an object pattern is obtained from the best-match calculated waveform.

    摘要翻译: 提供了即使当相对于半导体器件的小型化而处理裕度窄时,也可以高精度地测量执行半导体图案的形状测量的图案形状的方法。 在测定图案形状的方法中,当不能选择最佳匹配的计算波形时,基于使用独立于图案的测量方法的另一测量装置获得的信息,将形状参数中的至少一个参数设置为固定值 形状测量,再次执行库和检测波形的匹配,选择最佳匹配计算波形,并根据最佳匹配计算波形获得目标图形的形状信息。

    Method and Apparatus for Inspecting Defects
    60.
    发明申请

    公开(公告)号:US20100014075A1

    公开(公告)日:2010-01-21

    申请号:US12504965

    申请日:2009-07-17

    IPC分类号: G01N21/88

    摘要: An apparatus for inspecting a substrate surface is provided, which includes illumination optics for irradiating the substrate surface linearly with rectilinearly polarized light from an oblique direction, detection optics for acquiring images of the substrate surface, each of the images being formed by the light scattered from the light-irradiated substrate surface, and means for comparing an image selected as an inspection image from the plurality of substrate surface images that the detection optics has acquired to detect defects, and another image selected from the plural images of the substrate surface as a reference image different from the inspection image; the illumination optics being formed with polarization control means for controlling a polarizing direction of the light according to a particular scanning direction of the substrate or a direction orthogonal to the scanning direction.