公开(公告)号：US20100267240A1

公开(公告)日：2010-10-21

申请号：US12827506

申请日：2010-06-30

申请人： Gurtej S. Sandhu ,  Kirk D. Prall

发明人： Gurtej S. Sandhu ,  Kirk D. Prall

IPC分类号： H01L21/302 ,  C23F1/08

CPC分类号： H01L21/67063 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/32053 ,  H01L21/32134

摘要： Spacers in a pitch multiplication process are formed without performing a spacer etch. Rather, the mandrels are formed over a substrate and then the sides of the mandrels are reacted, e.g., in an oxidization, nitridation, or silicidation step, to form a material that can be selectively removed relative to the unreacted portions of the mandrel. The unreacted portions are selectively removed to leave a pattern of free-standing spacers. The free-standing spacers can serve as a mask for subsequent processing steps, such as etching the substrate.

摘要翻译： 在不执行间隔物蚀刻的情况下形成间距倍增过程中的间隔物。 相反，心轴形成在衬底上，然后心轴的侧面例如在氧化，氮化或硅化步骤中反应，以形成相对于心轴的未反应部分可以选择性去除的材料。 选择性地去除未反应部分以留下独立间隔物的图案。 独立的间隔物可以用作后续处理步骤的掩模，例如蚀刻基底。

公开(公告)号：US20100258857A1

公开(公告)日：2010-10-14

申请号：US12820924

申请日：2010-06-22

申请人： Nirmal Ramaswamy ,  Gurtej S. Sandhu ,  Cem Basceri ,  Eric R. Blomiley

发明人： Nirmal Ramaswamy ,  Gurtej S. Sandhu ,  Cem Basceri ,  Eric R. Blomiley

IPC分类号： H01L29/78

CPC分类号： H01L29/66787 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66742 ,  H01L29/78642

摘要： This invention includes methods of forming layers comprising epitaxial silicon, and field effect transistors. In one implementation, a method of forming a layer comprising epitaxial silicon comprises epitaxially growing a silicon-comprising layer from an exposed monocrystalline material. The epitaxially grown silicon comprises at least one of carbon, germanium, and oxygen present at a total concentration of no greater than 1 atomic percent. In one implementation, the layer comprises a silicon germanium alloy comprising at least 1 atomic percent germanium, and further comprises at least one of carbon and oxygen at a total concentration of no greater than 1 atomic percent. Other aspects and implementations are contemplated.

摘要翻译： 本发明包括形成包括外延硅和场效应晶体管的层的方法。 在一个实施方案中，形成包含外延硅的层的方法包括从暴露的单晶材料外延生长含硅层。 外延生长的硅包括以不超过1原子％的总浓度存在的碳，锗和氧中的至少一种。 在一个实施方案中，该层包括含有至少1原子％锗的硅锗合金，并且还包含总浓度不大于1原子％的碳和氧中的至少一种。 考虑了其他方面和实现。

公开(公告)号：US07811840B2

公开(公告)日：2010-10-12

申请号：US12128334

申请日：2008-05-28

申请人： Gurtej S. Sandhu ,  Bhaskar Srinivasan

发明人： Gurtej S. Sandhu ,  Bhaskar Srinivasan

IPC分类号： H01L21/00

CPC分类号： H01L45/00 ,  Y10S257/91 ,  Y10S438/90 ,  Y10S438/902 ,  Y10S438/983

摘要： Some embodiments include methods of forming diodes. The methods may include oxidation of an upper surface of a conductive electrode to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of an oxidizable material over a conductive electrode, and subsequent oxidation of the oxidizable material to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of a metal halide layer over a conductive electrode. Some embodiments include diodes that contain a metal halide layer between a pair of diode electrodes.

摘要翻译： 一些实施例包括形成二极管的方法。 所述方法可以包括氧化导电电极的上表面以在导电电极上形成氧化物层。 在一些实施方案中，所述方法可包括在导电电​​极上形成可氧化材料，以及随后氧化可氧化材料以在导电电极上形成氧化物层。 在一些实施例中，所述方法可包括在导电电​​极上形成金属卤化物层。 一些实施例包括在一对二极管电极之间包含金属卤化物层的二极管。

公开(公告)号：US20100248094A1

公开(公告)日：2010-09-30

申请号：US12797508

申请日：2010-06-09

申请人： William Stanton ,  Gurtej S. Sandhu

发明人： William Stanton ,  Gurtej S. Sandhu

IPC分类号： G03F1/00

CPC分类号： G03F1/72 ,  G03F1/50

摘要： Some embodiments include methods of treating reticles to provide backside masking across regions of the reticle to compensate for problems occurring during photolithographic processing. The problems may be, for example, defects in the reticle, problems associated with deposition or development of photoresist, or problems associated with substrate topography. The masking may alter one or both of transmission of electromagnetic radiation through the masked regions, and polarization of electromagnetic radiation passed through the masked regions. Some embodiments include reticles having patterns along front sides for patterning electric magnetic radiation, and masks across portions of the backsides to at least partially block transmission of electromagnetic radiation through portions of the patterns.

摘要翻译： 一些实施例包括处理掩模版以在掩模版的区域之间提供背面掩蔽以补偿光刻处理期间出现的问题的方法。 问题可能是例如掩模版中的缺陷，与光致抗蚀剂的沉积或显影相关的问题，或与衬底形貌有关的问题。 掩蔽可以改变透过屏蔽区域的电磁辐射的一种或两种以及通过掩蔽区域的电磁辐射的极化。 一些实施例包括具有沿着前侧的图案的掩模版，用于图形化电磁辐射，以及掩模跨越所述背面的部分以至少部分地阻挡电磁辐射通过所述图案的一部分的透射。

公开(公告)号：US07791055B2

公开(公告)日：2010-09-07

申请号：US11483800

申请日：2006-07-10

申请人： Mark J. Williamson ,  Paul M. Johnson ,  Shawn D. Lyonsmith ,  Gurtej S. Sandhu ,  Justin R. Arrington

发明人： Mark J. Williamson ,  Paul M. Johnson ,  Shawn D. Lyonsmith ,  Gurtej S. Sandhu ,  Justin R. Arrington

IPC分类号： G01N21/86

CPC分类号： G01N1/32

摘要： A method of imaging and identifying defects and contamination on the surface of an integrated circuit is described. The method may be used on areas smaller than one micron in diameter. An energetic beam, such as an electron beam, is directed at a selected IC location having a layer of a solid, fluid or gaseous reactive material formed over the surface. The energetic beam disassociates the reactive material in the region into chemical radicals that either chemically etch the surface preferentially, or deposit a thin layer of a conductive material over the local area around the energetic beam. The surface may be examined as various layers are selectively etched to decorate defects and/or as various layers are locally deposited in the area around the energetic beam. SEM imaging and other analytic methods may be used to identify the problem more easily.

摘要翻译： 描述了在集成电路的表面上成像和识别缺陷和污染的方法。 该方法可以用于直径小于1微米的区域。 诸如电子束的能量束被引导到选定的IC位置，其具有形成在表面上的固体，流体或气态反应性材料层。 能量束将该区域中的反应性材料分解成化学自由基，其优先化学蚀刻表面，或者在能量束周围的局部区域上沉积导电材料的薄层。 可以检查表面，因为选择性地蚀刻各种层以修饰缺陷和/或当各种层局部沉积在能量束周围的区域中时。 可以使用SEM成像和其他分析方法来更容易地识别问题。

公开(公告)号：US07776744B2

公开(公告)日：2010-08-17

申请号：US11219346

申请日：2005-09-01

申请人： Gurtej S. Sandhu ,  Kirk D. Prall

发明人： Gurtej S. Sandhu ,  Kirk D. Prall

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/67063 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/32053 ,  H01L21/32134

摘要： Spacers in a pitch multiplication process are formed without performing a spacer etch. Rather, the mandrels are formed over a substrate and then the sides of the mandrels are reacted, e.g., in an oxidization, nitridation, or silicidation step, to form a material that can be selectively removed relative to the unreacted portions of the mandrel. The unreacted portions are selectively removed to leave a pattern of free-standing spacers. The free-standing spacers can serve as a mask for subsequent processing steps, such as etching the substrate.

摘要翻译： 在不执行间隔物蚀刻的情况下形成间距倍增过程中的间隔物。 相反，心轴形成在衬底上，然后心轴的侧面例如在氧化，氮化或硅化步骤中反应，以形成相对于心轴的未反应部分可以选择性去除的材料。 选择性地去除未反应部分以留下独立间隔物的图案。 独立的间隔物可以用作后续处理步骤的掩模，例如蚀刻基底。

公开(公告)号：US07768036B2

公开(公告)日：2010-08-03

申请号：US12410179

申请日：2009-03-24

申请人： Nirmal Ramaswamy ,  Gurtej S. Sandhu ,  Cem Basceri ,  Eric R. Blomiley

发明人： Nirmal Ramaswamy ,  Gurtej S. Sandhu ,  Cem Basceri ,  Eric R. Blomiley

IPC分类号： H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： H01L29/66787 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66742 ,  H01L29/78642

摘要： This invention includes methods of forming layers comprising epitaxial silicon, and field effect transistors. In one implementation, a method of forming a layer comprising epitaxial silicon comprises epitaxially growing a silicon-comprising layer from an exposed monocrystalline material. The epitaxially grown silicon comprises at least one of carbon, germanium, and oxygen present at a total concentration of no greater than 1 atomic percent. In one implementation, the layer comprises a silicon germanium alloy comprising at least 1 atomic percent germanium, and further comprises at least one of carbon and oxygen at a total concentration of no greater than 1 atomic percent. Other aspects and implementations are contemplated.

摘要翻译： 本发明包括形成包括外延硅和场效应晶体管的层的方法。 在一个实施方案中，形成包含外延硅的层的方法包括从暴露的单晶材料外延生长含硅层。 外延生长的硅包括以不超过1原子％的总浓度存在的碳，锗和氧中的至少一种。 在一个实施方案中，该层包括含有至少1原子％锗的硅锗合金，并且还包含总浓度不大于1原子％的碳和氧中的至少一种。 考虑了其他方面和实现。

公开(公告)号：US20100190114A1

公开(公告)日：2010-07-29

申请号：US12757327

申请日：2010-04-09

申请人： Gurtej S. Sandhu ,  Steve Kramer

发明人： Gurtej S. Sandhu ,  Steve Kramer

IPC分类号： G03F7/20

CPC分类号： H01L21/0337 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088

摘要： A mask having features formed by self-organizing material, such as diblock copolymers, is formed on a partially fabricated integrated circuit. Initially, a copolymer template, or seed layer, is formed on the surface of the partially fabricated integrated circuit. To form the seed layer, diblock copolymers, composed of two immiscible blocks, are deposited in the space between copolymer alignment guides. The copolymers are made to self-organize, with the guides guiding the self-organization and with each block aggregating with other blocks of the same type, thereby forming the seed layer. Next, additional, supplemental diblock copolymers are deposited over the seed layer. The copolymers in the seed layer guide self-organization of the supplemental copolymers, thereby vertically extending the pattern formed by the copolymers in the seed layer. Block species are subsequently selectively removed to form a pattern of voids defined by the remaining block species, which form a mask that can be used to pattern an underlying substrate. The supplemental copolymers augment the height of the copolymers in the seed layer, thereby facilitating the use of the copolymers for patterning the underlying substrate.

摘要翻译： 在部分制造的集成电路上形成具有由诸如二嵌段共聚物之类的自组织材料形成的特征的掩模。 最初，在部分制造的集成电路的表面上形成共聚物模板或种子层。 为了形成种子层，由共混物对准引导件之间的空间中沉积由两个不混溶的嵌段组成的二嵌段共聚物。 使共聚物自组织，引导引导自组织，每个块与相同类型的其它嵌段聚集，从而形成种子层。 接下来，在种子层上沉积另外的补充二嵌段共聚物。 种子层中的共聚物引导辅助共聚物的自组织，从而在种子层中垂直延伸由共聚物形成的图案。 随后选择性地去除块物质以形成由剩余的嵌段物质限定的空隙图案，其形成可用于对下面的基底进行图案化的掩模。 补充共聚物增加了种子层中共聚物的高度，从而有利于共聚物用于图案化下面的底物。

公开(公告)号：US07754395B2

公开(公告)日：2010-07-13

申请号：US11750165

申请日：2007-05-17

申请人： William Stanton ,  Gurtej S. Sandhu

发明人： William Stanton ,  Gurtej S. Sandhu

IPC分类号： G03F1/00

CPC分类号： G03F1/72 ,  G03F1/50

摘要： Some embodiments include methods of treating reticles to provide backside masking across regions of the reticle to compensate for problems occurring during photolithographic processing. The problems may be, for example, defects in the reticle, problems associated with deposition or development of photoresist, or problems associated with substrate topography. The masking may alter one or both of transmission of electromagnetic radiation through the masked regions, and polarization of electromagnetic radiation passed through the masked regions. Some embodiments include reticles having patterns along front sides for patterning electric magnetic radiation, and masks across portions of the backsides to at least partially block transmission of electromagnetic radiation through portions of the patterns.

摘要翻译： 一些实施例包括处理掩模版以在掩模版的区域之间提供背面掩蔽以补偿光刻处理期间出现的问题的方法。 问题可能是例如掩模版中的缺陷，与光致抗蚀剂的沉积或显影相关的问题，或与衬底形貌有关的问题。 掩蔽可以改变透过屏蔽区域的电磁辐射的一种或两种以及通过掩蔽区域的电磁辐射的极化。 一些实施例包括具有沿着前侧的图案的掩模版，用于图形化电磁辐射，以及掩模跨越所述背面的部分以至少部分地阻挡电磁辐射通过所述图案的一部分的透射。

公开(公告)号：US07749327B2

公开(公告)日：2010-07-06

申请号：US11933770

申请日：2007-11-01

申请人： Nishant Sinha ,  Gurtej S. Sandhu

发明人： Nishant Sinha ,  Gurtej S. Sandhu

IPC分类号： B08B3/00 ,  B08B3/04

CPC分类号： B08B3/10 ,  B08B7/02 ,  B24C3/322 ,  B24C7/0007 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/67051

摘要： Some embodiments include methods for treating surfaces. Beads and/or other insolubles may be dispersed within a liquid carrier to form a dispersion. A transfer layer may be formed across a surface. The dispersion may be directed toward the transfer layer, and the insolubles may impact the transfer layer. The impacting may generate force in the transfer layer, and such force may be transferred through the transfer layer to the surface. The surface may be a surface of a semiconductor substrate, and the force may be utilized to sweep contaminants from the semiconductor substrate surface. The transfer layer may be a liquid, and in some embodiments may be a cleaning solution.

摘要翻译： 一些实施方案包括用于处理表面的方法。 珠和/或其他不溶物可以分散在液体载体中以形成分散体。 可以跨越表面形成转印层。 分散体可以指向转移层，并且不溶物可能影响转移层。 冲击可能在转移层中产生力，并且这种力可以通过转移层转移到表面。 表面可以是半导体衬底的表面，并且该力可用于从半导体衬底表面扫除污染物。 转移层可以是液体，并且在一些实施方案中可以是清洁溶液。