摘要:
A color conversion filter contains at least one kind of squarylium dye that radiates fluorescence light, has a wavelength conversion capability, absorbs light in an unneeded wavelength region, radiates fluorescence light in a preferable wavelength region, and does not allow decrease in brightness, and thus is preferable for color conversion light-emitting devices, photoelectric conversion devices and the like. Specifically, the color conversion filter has an absorption having a high intensity in the range of 570 to 600 nm, and thus is preferable for use in a color conversion filter that radiates fluorescence light having a high intensity in the range of 600 to 780 nm.
摘要:
A method for forming a laminated structure including an amorphous carbon film on an underlying layer includes forming an initial layer containing Si—C bonds on a surface of the underlying layer, by supplying an organic silicon gas onto the underlying layer; and forming the amorphous carbon film by thermal film formation on the underlying layer with the initial layer formed on the surface thereof, by supplying a film formation gas containing a hydrocarbon compound gas onto the underlying layer.
摘要:
A film formation apparatus for a semiconductor process includes a process gas supply system configured to supply process gases. The process gas supply system includes a gas mixture tank configured to mix first and third process gases to form a mixture gas, a mixture gas supply line configured to supply the mixture gas from the gas mixture tank to a process field, a second process gas supply circuit having a second process gas supply line configured to supply a second process gas to the process field without passing through the gas mixture tank, and first and second switching valves disposed on the mixture gas supply line and the second process gas supply line, respectively. A control section controls the first and second switching valves to be opened and closed so as to alternately and pulse-wise supply the mixture gas and the second process gas to the process field.
摘要:
The present invention provides green and red conversion films capable of keeping a sufficient intensity of converted light over a long period, and a multicolor emission organic EL device which exhibits light-emitting properties stably over a long period. The present invention includes a pendant-type polymeric compound characterized in that the pendant-type polymeric compound contains at least one repeating unit represented by a general formula (1) and at least one repeating unit represented by a general formula (2), (6) or (7), wherein n/(m+n)=1/100 to 100/100 provided that the molar ratio of (1):(2), (6) or (7) is m:n.
摘要:
A stereoscopic image display device, for outputting left and right two (2) pieces of output videos, by superimposing an OSD (On Screen Display) on left and right two (2) pieces of output images, comprises: a disparity correction portion for correcting disparity of the input images, thereby outputting corrected images; and an OSD superimpose for superimposing the OSD on each of the corrected image, thereby outputting output images, wherein correction is made in such that the disparity of the corrected images in jumping out direction comes to be small, when displaying the OSD, and thereby lightening visual fatigue due to the fact that an object on the input image is seen in front than the OSD.
摘要:
A recording/reproducing apparatus, for enabling recording/reproducing of a three-dimensional (3D) video stream, by taking a display environment into the consideration thereof, comprises: a stream distinguishing means for distinguishing the three-dimensional (3D) video stream; a 3D/2D stream converting for converting the three-dimensional (3D) video stream distinguished by the stream distinguishing means into a two-dimensional (2D) video stream; and a conversion indicating means for indicating to execute the 3D/2D conversion, wherein the three-dimensional (3D) video stream is converted into the two-dimensional (2D) video stream by the 3D/2D stream means, when the 3D/2D conversion is indicted in the conversion indicating means.
摘要:
After silicon nitride films have been formed on wafers by a film forming process in a reaction vessel, the reaction vessel is processed by a purging process specified by a purging recipe and compatible with the film forming process to suppress production of gases and particles by removing surface parts of films deposited on the inside surface of the reaction vessel and causative of production of gases and particles.A wafer boat 25 holding a plurality of wafers W is loaded into a reaction vessel 2, and the wafers W are processed by a film forming process specified by a film forming recipe 1 specifying, for example, Si2Cl2 gas and NH3 gas as film forming gases. Subsequently, a purging recipe 1 specifying a purging process compatible to the film forming process is selected automatically, and the reaction vessel 2 is processed by the purging process specified by the purging recipe 1. A purging recipe is selected automatically from a plurality of purging recipes specifying purging processes respectively compatible with film forming processes. Unnecessary extension of purging time is suppressed and the reaction vessel 2 can be processed by an appropriate purging process compatible with the film forming process.
摘要:
A film formation method for a semiconductor process includes placing a plurality of target objects at intervals in a vertical direction inside a process container of a film formation apparatus. Then, the method includes setting the process container to have a first vacuum state therein, and supplying a first film formation gas containing a hydrocarbon gas into the process container, thereby forming a carbon film by CVD on the target objects. Then, the method includes setting the process container to have a second vacuum state therein, while maintaining the process container to have a vacuum state therein from the first vacuum state, and supplying a second film formation gas containing an organic silicon source gas into the process container, thereby forming an Si-containing inorganic film by CVD on the carbon film.
摘要:
A method of using a film formation apparatus for a semiconductor process includes removing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus, and then chemically planarizing the inner surface of the reaction chamber by a planarizing gas. The inner surface contains as a main component quartz or silicon carbide. The removing is performed while supplying the cleaning gas into the reaction chamber, and setting the reaction chamber at a first temperature and first pressure to activate the cleaning gas. The planarizing is performed while supplying the planarizing gas into the reaction chamber, and setting the reaction chamber at a second temperature and second pressure to activate the planarizing gas. The planarizing gas contains fluorine gas and hydrogen gas.
摘要:
The cyanine compound of the present invention is represented by general formula (I) below and suitable as an optical recording material used in a recording layer of optical recording media on which recording and play-back are conducted with laser beam. The cyanine compound of the present invention particularly exhibits appropriate thermal decomposition behavior to attain sensitivity compatible with high-speed recording. (In the formula, each of ring A and ring B represents an optionally substituted benzene or naphthalene ring; each of R1 and R2 independently represents a C1-4 alkyl group or an optionally substituted benzyl group; at least one of R1 and R2 is an optionally substituted benzyl group; X represents O, S, or NY; each of Y, Y1, and Y2 independently represents a hydrogen atom or a C1-30 organic group; Z represents a hydrogen atom, a halogen atom, or a cyano group; Anm- represents an m-valent anion; m represents an integer of 1 or 2; and p represents a coefficient to keep an electric charge neutral.)