Method for forming laminated structure including amorphous carbon film
    52.
    发明授权
    Method for forming laminated structure including amorphous carbon film 有权
    用于形成包括无定形碳膜的叠层结构的方法

    公开(公告)号:US08592324B2

    公开(公告)日:2013-11-26

    申请号:US13019553

    申请日:2011-02-02

    IPC分类号: H01L21/31 C23C16/52

    摘要: A method for forming a laminated structure including an amorphous carbon film on an underlying layer includes forming an initial layer containing Si—C bonds on a surface of the underlying layer, by supplying an organic silicon gas onto the underlying layer; and forming the amorphous carbon film by thermal film formation on the underlying layer with the initial layer formed on the surface thereof, by supplying a film formation gas containing a hydrocarbon compound gas onto the underlying layer.

    摘要翻译: 在底层上形成包含非晶质碳膜的叠层结构体的方法包括在下层的表面上形成含有Si-C键的初始层,通过向下层提供有机硅气体; 通过在其下表面形成有初始层的底层上的热成膜形成非晶碳膜,通过将含有烃化合物气体的成膜气体供给到下层上。

    Film formation method and apparatus for semiconductor process
    53.
    发明授权
    Film formation method and apparatus for semiconductor process 有权
    用于半导体工艺的成膜方法和装置

    公开(公告)号:US08343594B2

    公开(公告)日:2013-01-01

    申请号:US12167270

    申请日:2008-07-03

    IPC分类号: H05H1/24

    摘要: A film formation apparatus for a semiconductor process includes a process gas supply system configured to supply process gases. The process gas supply system includes a gas mixture tank configured to mix first and third process gases to form a mixture gas, a mixture gas supply line configured to supply the mixture gas from the gas mixture tank to a process field, a second process gas supply circuit having a second process gas supply line configured to supply a second process gas to the process field without passing through the gas mixture tank, and first and second switching valves disposed on the mixture gas supply line and the second process gas supply line, respectively. A control section controls the first and second switching valves to be opened and closed so as to alternately and pulse-wise supply the mixture gas and the second process gas to the process field.

    摘要翻译: 一种用于半导体工艺的成膜装置包括:配置成供给处理气体的工艺气体供给系统。 工艺气体供给系统包括配置成混合第一和第三处理气体以形成混合气体的气体混合罐;配置成将来自气体混合罐的混合气体供给到处理场的混合气体供应管线,第二工艺气体供应 电路,具有第二工艺气体供给管线,其被配置为在不通过所述气体混合罐的情况下将第二处理气体供给到所述处理场,以及分别设置在所述混合气体供给管线和所述第二处理气体供给管线上的第一和第二切换阀。 控制部分控制第一和第二切换阀的打开和关闭,以便将混合气体和第二处理气体交替地和脉冲地供给到处理场。

    PENDANT-TYPE POLYMERIC COMPOUND, COLOR CONVERSION FILM USING PENDANT-TYPE POLYMERIC COMPOUND, AND MULTICOLOR EMISSION ORGANIC EL DEVICE
    54.
    发明申请
    PENDANT-TYPE POLYMERIC COMPOUND, COLOR CONVERSION FILM USING PENDANT-TYPE POLYMERIC COMPOUND, AND MULTICOLOR EMISSION ORGANIC EL DEVICE 失效
    助剂型聚合物,使用吊坠型聚合物的颜色转换膜和多元素排放有机EL装置

    公开(公告)号:US20120229017A1

    公开(公告)日:2012-09-13

    申请号:US13496847

    申请日:2010-09-10

    IPC分类号: C08G73/02 C09K11/06 H01J1/63

    摘要: The present invention provides green and red conversion films capable of keeping a sufficient intensity of converted light over a long period, and a multicolor emission organic EL device which exhibits light-emitting properties stably over a long period. The present invention includes a pendant-type polymeric compound characterized in that the pendant-type polymeric compound contains at least one repeating unit represented by a general formula (1) and at least one repeating unit represented by a general formula (2), (6) or (7), wherein n/(m+n)=1/100 to 100/100 provided that the molar ratio of (1):(2), (6) or (7) is m:n.

    摘要翻译: 本发明提供能够长时间保持足够的转换光强度的绿色和红色转换膜,以及长期稳定地显示发光特性的多色发光有机EL器件。 本发明包括侧挂型聚合物,其特征在于,所述侧挂型高分子化合物含有至少一个由通式(1)表示的重复单元和至少一个由通式(2)表示的重复单元,(6) )或(7),其中n /(m + n)= 1/100〜100/100,条件是(1):(2),(6)或(7)的摩尔比为m:n。

    STEREOSCOPIC IMAGE DISPLAY DEVICE
    55.
    发明申请
    STEREOSCOPIC IMAGE DISPLAY DEVICE 审中-公开
    立体图像显示装置

    公开(公告)号:US20110242296A1

    公开(公告)日:2011-10-06

    申请号:US12955425

    申请日:2010-11-29

    IPC分类号: H04N13/04

    CPC分类号: H04N13/128 H04N13/183

    摘要: A stereoscopic image display device, for outputting left and right two (2) pieces of output videos, by superimposing an OSD (On Screen Display) on left and right two (2) pieces of output images, comprises: a disparity correction portion for correcting disparity of the input images, thereby outputting corrected images; and an OSD superimpose for superimposing the OSD on each of the corrected image, thereby outputting output images, wherein correction is made in such that the disparity of the corrected images in jumping out direction comes to be small, when displaying the OSD, and thereby lightening visual fatigue due to the fact that an object on the input image is seen in front than the OSD.

    摘要翻译: 一种立体图像显示装置,用于通过在左和右两(2)个输出图像上叠加OSD(屏幕显示)来输出左和右两(2)个输出视频,包括:视差校正部分,用于校正 输入图像的差异,从而输出校正图像; 并且OSD叠加用于将OSD叠加在每个校正图像上,从而输出输出图像,其中进行校正以使得在显示OSD时校正图像在跳出方向上的视差变小,从而减轻 由于输入图像上的物体比OSD前方看到的事实导致视觉疲劳。

    Recording/Reproducing Apparatus
    56.
    发明申请
    Recording/Reproducing Apparatus 审中-公开
    记录/重现装置

    公开(公告)号:US20100329640A1

    公开(公告)日:2010-12-30

    申请号:US12769490

    申请日:2010-04-28

    IPC分类号: H04N13/00 H04N5/91

    摘要: A recording/reproducing apparatus, for enabling recording/reproducing of a three-dimensional (3D) video stream, by taking a display environment into the consideration thereof, comprises: a stream distinguishing means for distinguishing the three-dimensional (3D) video stream; a 3D/2D stream converting for converting the three-dimensional (3D) video stream distinguished by the stream distinguishing means into a two-dimensional (2D) video stream; and a conversion indicating means for indicating to execute the 3D/2D conversion, wherein the three-dimensional (3D) video stream is converted into the two-dimensional (2D) video stream by the 3D/2D stream means, when the 3D/2D conversion is indicted in the conversion indicating means.

    摘要翻译: 一种用于通过将显示环境考虑在内的三维(3D)视频流的记录/再现的记录/再现装置,包括:用于区分三维(3D)视频流的流区分装置; 用于将由流识别装置识别的三维(3D)视频流转换为二维(2D)视频流的3D / 2D流转换; 以及用于指示执行3D / 2D转换的转换指示装置,其中当3D / 2D视频流被3D / 2D流装置转换成三维(3D)视频流时,3D / 2D流装置 在转换指示装置中指示转换。

    Film forming method, film forming system and recording medium
    57.
    发明授权
    Film forming method, film forming system and recording medium 有权
    成膜方法,成膜系统和记录介质

    公开(公告)号:US07713354B2

    公开(公告)日:2010-05-11

    申请号:US12213574

    申请日:2008-06-20

    IPC分类号: C23C16/52 C23C16/00

    CPC分类号: C23C16/52 C23C16/4408

    摘要: After silicon nitride films have been formed on wafers by a film forming process in a reaction vessel, the reaction vessel is processed by a purging process specified by a purging recipe and compatible with the film forming process to suppress production of gases and particles by removing surface parts of films deposited on the inside surface of the reaction vessel and causative of production of gases and particles.A wafer boat 25 holding a plurality of wafers W is loaded into a reaction vessel 2, and the wafers W are processed by a film forming process specified by a film forming recipe 1 specifying, for example, Si2Cl2 gas and NH3 gas as film forming gases. Subsequently, a purging recipe 1 specifying a purging process compatible to the film forming process is selected automatically, and the reaction vessel 2 is processed by the purging process specified by the purging recipe 1. A purging recipe is selected automatically from a plurality of purging recipes specifying purging processes respectively compatible with film forming processes. Unnecessary extension of purging time is suppressed and the reaction vessel 2 can be processed by an appropriate purging process compatible with the film forming process.

    摘要翻译: 氮化硅膜通过成膜工艺在反应容器中形成在氮化硅膜上之后,通过清洗配方指定的清洗方法处理反应容器,与成膜工艺相容,通过除去表面来抑制气体和颗粒的产生 沉积在反应容器内表面上的部分薄膜,并导致气体和颗粒的产生。 将保持多个晶片W的晶片舟皿25装载到反应容器2中,并且通过成膜方法1所规定的成膜方法处理晶片W,该成膜配方1规定例如作为成膜气体的Si 2 Cl 2气体和NH 3气体 。 随后,自动选择指定与成膜过程相容的清洗处理的清洗配方1,并通过清洗配方1规定的清洗处理来处理反应容器2.从多个清洗配方中自动选择清洗配方 指定分别与成膜工艺相容的清洗工艺。 清洗时间的不必要的延长被抑制,反应容器2可以通过与成膜过程相容的适当清洗过程进行处理。

    Film formation method and apparatus for semiconductor process
    58.
    发明授权
    Film formation method and apparatus for semiconductor process 有权
    用于半导体工艺的成膜方法和装置

    公开(公告)号:US07696106B2

    公开(公告)日:2010-04-13

    申请号:US12216703

    申请日:2008-07-09

    IPC分类号: H01L21/314

    摘要: A film formation method for a semiconductor process includes placing a plurality of target objects at intervals in a vertical direction inside a process container of a film formation apparatus. Then, the method includes setting the process container to have a first vacuum state therein, and supplying a first film formation gas containing a hydrocarbon gas into the process container, thereby forming a carbon film by CVD on the target objects. Then, the method includes setting the process container to have a second vacuum state therein, while maintaining the process container to have a vacuum state therein from the first vacuum state, and supplying a second film formation gas containing an organic silicon source gas into the process container, thereby forming an Si-containing inorganic film by CVD on the carbon film.

    摘要翻译: 半导体工艺的成膜方法包括在成膜装置的处理容器内沿垂直方向间隔放置多个目标物体。 然后,该方法包括将处理容器设置为具有第一真空状态,并将含有烃气体的第一成膜气体供给到处理容器中,从而通过目标物体上的CVD形成碳膜。 然后,该方法包括将处理容器设定为具有第二真空状态,同时将处理容器从第一真空状态保持在其中具有真空状态,并将含有有机硅源气体的第二成膜气体供给到该方法 容器,由此在碳膜上通过CVD形成含Si的无机膜。

    Film formation apparatus and method of using the same
    59.
    发明授权
    Film formation apparatus and method of using the same 有权
    成膜装置及其使用方法

    公开(公告)号:US07691445B2

    公开(公告)日:2010-04-06

    申请号:US11562198

    申请日:2006-11-21

    IPC分类号: B05D3/04

    摘要: A method of using a film formation apparatus for a semiconductor process includes removing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus, and then chemically planarizing the inner surface of the reaction chamber by a planarizing gas. The inner surface contains as a main component quartz or silicon carbide. The removing is performed while supplying the cleaning gas into the reaction chamber, and setting the reaction chamber at a first temperature and first pressure to activate the cleaning gas. The planarizing is performed while supplying the planarizing gas into the reaction chamber, and setting the reaction chamber at a second temperature and second pressure to activate the planarizing gas. The planarizing gas contains fluorine gas and hydrogen gas.

    摘要翻译: 使用半导体工艺的成膜装置的方法包括:通过清洗气体除去沉积在成膜装置的反应室的内表面上的副产物膜,然后用反应室的内表面化学平面化反应室的内表面 平坦化气体。 内表面包含石英或碳化硅的主要成分。 在将清洁气体供应到反应室中并且将反应室设置在第一温度和第一压力下以启动清洁气体的同时进行除去。 在将平坦化气体供应到反应室中并且将反应室设置在第二温度和第二压力下以激活平坦化气体的同时进行平面化。 平坦化气体含有氟气和氢气。

    Cyanine compound, optical recording material using the same and optical recording medium
    60.
    发明授权
    Cyanine compound, optical recording material using the same and optical recording medium 失效
    花青素化合物,使用其的光学记录材料和光学记录介质

    公开(公告)号:US07682773B2

    公开(公告)日:2010-03-23

    申请号:US11791487

    申请日:2005-10-13

    IPC分类号: G11B7/24

    摘要: The cyanine compound of the present invention is represented by general formula (I) below and suitable as an optical recording material used in a recording layer of optical recording media on which recording and play-back are conducted with laser beam. The cyanine compound of the present invention particularly exhibits appropriate thermal decomposition behavior to attain sensitivity compatible with high-speed recording. (In the formula, each of ring A and ring B represents an optionally substituted benzene or naphthalene ring; each of R1 and R2 independently represents a C1-4 alkyl group or an optionally substituted benzyl group; at least one of R1 and R2 is an optionally substituted benzyl group; X represents O, S, or NY; each of Y, Y1, and Y2 independently represents a hydrogen atom or a C1-30 organic group; Z represents a hydrogen atom, a halogen atom, or a cyano group; Anm- represents an m-valent anion; m represents an integer of 1 or 2; and p represents a coefficient to keep an electric charge neutral.)

    摘要翻译: 本发明的花青化合物由下述通式(I)表示,适合作为用激光束进行记录和回放的光记录介质的记录层中使用的光记录材料。 本发明的花青化合物特别表现出适当的热分解行为以获得与高速记录兼容的灵敏度。 (式中,环A和环B分别表示可以具有取代基的苯或萘环,R 1和R 2各自独立地表示碳原子数为1〜4的烷基或可以具有取代基的苄基; R 1和R 2中的至少一个为 任选取代的苄基; X表示O,S或NY; Y,Y1和Y2各自独立地表示氢原子或C1-30有机基团; Z表示氢原子,卤素原子或氰基; Anm-表示m价阴离子; m表示1或2的整数; p表示保持电荷中性的系数。