公开(公告)号：US07532717B2

公开(公告)日：2009-05-12

申请号：US09963499

申请日：2001-09-27

申请人： Eiichi Nishimura

发明人： Eiichi Nishimura

IPC分类号： H04M9/08

CPC分类号： H04M9/082

摘要： An echo canceler removes the echo of a receive signal from a transmit signal while also controlling the signal level of the transmit signal. The echo canceler generates signal level data for the transmit signal, updates the signal level data when the transmit signal is active and the receive signal is inactive, and amplifies the transmit signal according to the signal level data. The echo canceler also generates an echo cancellation signal from the receive signal, amplifies the echo cancellation signal according to the signal level data, and subtracts the amplified echo cancellation signal from the amplified transmit signal to obtain a transmit output signal.

公开(公告)号：US20090087991A1

公开(公告)日：2009-04-02

申请号：US12284750

申请日：2008-09-24

申请人： Koichi Yatsuda ,  Eiichi Nishimura

发明人： Koichi Yatsuda ,  Eiichi Nishimura

IPC分类号： H01L21/3105

CPC分类号： H01L21/32139 ,  H01L21/0337

摘要： A manufacturing method of a semiconductor device, which etches a layer to be etched on a substrate into a predetermined pattern based on a first pattern of photoresist produced by exposing and developing a photoresist film, the manufacturing method includes the steps of, patterning an organic membrane based on a first pattern of the photoresist, forming an SiO2 film on the patterned organic membrane, etching the SiO2 film so that the SiO2 remains only in a side wall section of the organic membrane and forming a second pattern of the SiO2 film by removing the organic membrane.

摘要翻译： 一种半导体器件的制造方法，其基于通过曝光和显影光致抗蚀剂膜产生的光致抗蚀剂的第一图案将基板上待刻蚀的层蚀刻成预定图案，所述制造方法包括以下步骤：将有机膜图案化 基于光致抗蚀剂的第一图案，在图案化有机膜上形成SiO 2膜，蚀刻SiO 2膜，使得SiO 2仅保留在有机膜的侧壁部分中，并通过除去SiO 2膜形成第二图案 有机膜。

公开(公告)号：US20080233766A1

公开(公告)日：2008-09-25

申请号：US12052239

申请日：2008-03-20

申请人： Shigeru Tahara ,  Eiichi Nishimura ,  Kumiko Yamazaki

发明人： Shigeru Tahara ,  Eiichi Nishimura ,  Kumiko Yamazaki

IPC分类号： H01L21/02 ,  B05C11/00

CPC分类号： H01L21/67069 ,  H01J37/32449 ,  H01J2237/2001 ,  H01L21/31138

摘要： An ashing method of a target substrate is applied after plasma-etching a part of a low-k film by using a patterned resist film as a mask in a vacuum processing chamber. The method includes a process of removing the resist film in the vacuum processing chamber, and a pre-ashing process, performed prior to the main ashing process, for ashing the target substrate for a time period while maintaining the target substrate at a temperature in a range of from about 80 to 150° C.

摘要翻译： 在真空处理室中通过使用图案化的抗蚀剂膜作为掩模等离子体蚀刻低k膜的一部分来施加目标基板的灰化方法。 该方法包括去除真空处理室中的抗蚀剂膜的过程，以及在主灰化过程之前进行的预灰化处理，用于在目标衬底处于一定时间期间灰化目标衬底一段时间，同时将靶衬底保持在 范围为约80至150℃

公开(公告)号：US20080179292A1

公开(公告)日：2008-07-31

申请号：US12014540

申请日：2008-01-15

申请人： Eiichi Nishimura ,  Chie Kato ,  Jun Yamawaku

发明人： Eiichi Nishimura ,  Chie Kato ,  Jun Yamawaku

IPC分类号： C23F1/02 ,  H01L21/306

CPC分类号： H01L21/31116

摘要： A substrate processing method that can remove a silicon nitride film without damaging a thermally-oxidized film. A substrate having at least a thermally-oxidized film and a silicon nitride film formed on the thermally-oxidized film is heated to a temperature of not less than 60° C. Then, hydrogen fluoride gas is supplied toward the substrate.

摘要翻译： 可以去除氮化硅膜而不损坏热氧化膜的基板处理方法。 将在热氧化膜上形成有至少具有热氧化膜和氮化硅膜的基板加热至不低于60℃的温度。然后向基板供给氟化氢气体。

公开(公告)号：US20070275560A1

公开(公告)日：2007-11-29

申请号：US11708676

申请日：2007-02-21

申请人： Eiichi Nishimura ,  Yoshihide Kihara ,  Yasushi Inata ,  Lyndon Lin

发明人： Eiichi Nishimura ,  Yoshihide Kihara ,  Yasushi Inata ,  Lyndon Lin

IPC分类号： H01L21/3065 ,  C23F1/08

CPC分类号： G03F7/427 ,  G03F7/40 ,  H01L21/31138 ,  H01L21/76814 ,  H01L21/76831

摘要： A low dielectric constant film containing a silicon, a carbon, an oxygen, and a hydrogen is formed on a substrate as a semiconductor wafer, and a resist film is formed on the low dielectric constant film. Then, the low dielectric constant film is etched with the use of the resist film as a mask to form an exposed surface of the low dielectric constant film. Next, there is deposited a protective film that covers the exposed surface of the low dielectric constant film formed by etching. Thereafter, by ashing with the use of a plasma containing an oxygen, the protective film and the resist film are removed. During the ashing, desorption of the carbon from an insulation film is restrained by the protective film.

摘要翻译： 在作为半导体晶片的基板上形成含有硅，碳，氧，氢的低介电常数膜，在低介电常数膜上形成抗蚀剂膜。 然后，使用抗蚀剂膜作为掩模来蚀刻低介电常数膜，以形成低介电常数膜的暴露表面。 接下来，沉积覆盖通过蚀刻形成的低介电常数膜的暴露表面的保护膜。 此后，通过使用含有氧的等离子体灰化，除去保护膜和抗蚀剂膜。 在灰化期间，由绝缘膜解吸碳被保护膜抑制。

公开(公告)号：US20060191865A1

公开(公告)日：2006-08-31

申请号：US11357168

申请日：2006-02-21

申请人： Eiichi Nishimura ,  Kenya Iwasaki

发明人： Eiichi Nishimura ,  Kenya Iwasaki

IPC分类号： C03C25/68 ,  H01L21/306 ,  C23F1/00

CPC分类号： H01L21/31055 ,  H01L21/67207 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14806

摘要： A method of processing a substrate that enables the amount removed of an insulating film to be controlled precisely, without damaging an electronic device. An insulating film on a substrate of a solid-state imaging device is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. The insulating film that has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.

公开(公告)号：US5766498A

公开(公告)日：1998-06-16

申请号：US623737

申请日：1996-03-29

申请人： Masayuki Kojima ,  Yoshikazu Ito ,  Kazushi Tomita ,  Shigeki Tozawa ,  Shunichi Iimuro ,  Masashi Arasawa ,  Eiichi Nishimura

发明人： Masayuki Kojima ,  Yoshikazu Ito ,  Kazushi Tomita ,  Shigeki Tozawa ,  Shunichi Iimuro ,  Masashi Arasawa ,  Eiichi Nishimura

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065

CPC分类号： H01J37/32009 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32724 ,  H01J2237/3345

摘要： A parallel-plate plasma etching apparatus includes a susceptor electrode and a shower electrode which are arranged in a process chamber. A semiconductor wafer is placed on the susceptor electrode. A shower region defined by a plurality of process gas supply holes is formed in the shower electrode. The shower electrode is cooled by a cooling block and causes an effective electrode portion of the shower electrode to have a temperature gradient such that a temperature at the central portion of the effective electrode portion is lower than a temperature at the peripheral portion of the effective electrode portion. The diameter of the shower region is selected to be smaller than the diameter of the wafer by 5 to 25% such that degradation of planar uniformity of a degree of etching anisotropy on the wafer caused by the temperature gradient of the effective electrode portion is compensated for. The diameter of the effective electrode portion is selected to be larger than the size of a wafer by 5 to 35% such that a taper angle of a side wall to be etched formed by etching is set to be 85.degree. to 90.degree..

公开(公告)号：US4982355A

公开(公告)日：1991-01-01

申请号：US300492

申请日：1989-01-20

申请人： Eiichi Nishimura ,  Takao Nakamura ,  Hisaki Ishida

发明人： Eiichi Nishimura ,  Takao Nakamura ,  Hisaki Ishida

IPC分类号： G06F7/53 ,  G06F7/508 ,  G06F7/52 ,  G06F7/76

CPC分类号： G06F7/5312 ,  G06F7/762

摘要： A parallel multiplier consists of a systolic array of AND gates and full adders organized in stages so that each stage generates a partial product, adds it to the preceding partial products, and furnishes the sum to the next stage. A control circuit is provided that disables the outputs of each stage of the array until the operation in the particular stage is completed. The disabling of outputs reduces power consumption.

摘要翻译： 并行乘法器由AND门的收缩阵列和分阶段组合的全加法器组成，使得每个阶段生成部分乘积，将其添加到先前的部分乘积，并将总和提供给下一个阶段。 提供了一种控制电路，其禁用阵列的每个级的输出，直到特定级的操作完成。 输出禁用可以降低功耗。

公开(公告)号：US09177781B2

公开(公告)日：2015-11-03

申请号：US13178759

申请日：2011-07-08

申请人： Shigeru Tahara ,  Eiichi Nishimura ,  Fumiko Yamashita ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

发明人： Shigeru Tahara ,  Eiichi Nishimura ,  Fumiko Yamashita ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

IPC分类号： H01L21/02

CPC分类号： H01L21/02071

摘要： A plasma processing method in which performing a plasma etching on metal layers formed on a substrate is conducted to form a pattern having the metal layers in a stacked structure, and then a deposit containing a metal that forms the metal layers and being deposited on a sidewall portion of the pattern is removed, the method includes: forming a protective layer by forming an oxide or chloride of the metal on sidewall portions of the metal layers; removing the deposit by applying a plasma of a gas containing fluorine atoms; and reducing the oxide or chloride of the metal by applying a plasma containing hydrogen after forming the protective layer and removing the deposit.

摘要翻译： 进行对形成在基板上的金属层进行等离子体蚀刻的等离子体处理方法，以形成具有层叠结构的金属层的图案，然后形成含有形成金属层并沉积在侧壁上的金属的沉积物 该方法包括：通过在金属层的侧壁部分上形成金属的氧化物或氯化物形成保护层; 通过施加含有氟原子的气体的等离子体来除去沉积物; 并通过在形成保护层之后施加包含氢的等离子体并除去沉积物来还原金属的氧化物或氯化物。

公开(公告)号：US09165784B2

公开(公告)日：2015-10-20

申请号：US13428212

申请日：2012-03-23

申请人： Eiichi Nishimura ,  Masato Kushibiki ,  Fumiko Yamashita

发明人： Eiichi Nishimura ,  Masato Kushibiki ,  Fumiko Yamashita

IPC分类号： H01L21/302 ,  H01L21/311 ,  H01L21/3065

CPC分类号： H01L21/31116 ,  H01L21/3065

摘要： Disclosed is a substrate processing method capable of preventing an etching rate from being deteriorated when a high aspect ratio hole or trench is formed on an oxide film. When a high aspect ratio hole or trench is formed on an oxide film by etching the oxide film formed on a wafer using a hard mask layer having an opening and made of silicon, the oxide film corresponding to the opening is etched using plasma generated from a processing gas containing a C4F6 gas and a methane gas. Subsequently, a reactive product generated by the etching and deposited on an inner surface of the hole of the oxide film is ashed with plasma generated from a processing gas containing an oxygen gas, and the etching and the ashing processes are repeated in sequence.

摘要翻译： 公开了一种当在氧化物膜上形成高纵横比孔或沟槽时能够防止蚀刻速率劣化的衬底处理方法。 当通过使用具有开口的硅制成的硬掩模层蚀刻在晶片上形成的氧化膜，在氧化物膜上形成高纵横比的孔或沟槽时，使用等离子体 处理含有C4F6气体和甲烷气体的气体。 随后，通过蚀刻生成并沉积在氧化膜的孔的内表面上的反应产物用从含有氧气的处理气体产生的等离子体等离子化，并且依次重复蚀刻和灰化过程。