摘要:
A semiconductor light-emitting device includes: a first semiconductor layer; a light-emitting layer being disposed on the first semiconductor layer; a second semiconductor layer being disposed on the light-emitting layer, and metal electrodes connected to the first semiconductor layer and the second semiconductor layer. The light-emitting layer is lower in refractive index than the first semiconductor layer. The second semiconductor layer is lower in refractive index than the light-emitting layer. The metal electrodes supply a current to the light-emitting layer.
摘要:
A discharge light emitting device includes a container formed from insulating diamond and accommodating a discharge space therein, a material for discharge sealed in the discharge vessel, and an electrode pair formed from a conductive diamond and provided to apply voltage to the material for discharge.
摘要:
A discharge lamp, in which diamond high in secondary electron emission efficiency and low in sputtering ratio is used as a cold cathode, includes an outer envelope filled with a discharge gas, a fluorescent film provided on an inner surface of the outer envelope, and a pair of electrodes which cause discharge to occur within the outer envelope. A diamond member is provided on a surface of each electrode, and oxygen is contained in the discharge gas at a ratio not less than 0.002% and not more than 12.5%.
摘要:
A cold cathode discharge device with high efficiency of light emission and long life is prepared by a cold cathode having both high secondary electron emission and anti-spattering property. Using carbon system cold cathodes constituted of a mixed phase of diamond and graphite, a cold cathode discharge device with high efficiency of light emission and long life is realized. It is desirable that an element having a wavelength of light emission equal to or shorter than 200 nanometers should be mixed in the discharge gas.
摘要:
A field emission device comprises an anode plate, an emitter plate having a plurality of filed emission portions that face the anode plate, and a gate plate having openings corresponding to the filed emission portions. The field emission device also comprises a current limiting element composed of a J FET or a MOSFET that is integrally formed with the gate plate and that is inserted between the gate plate and a gate voltage supply terminal. The loss caused by the emitter current is small as the current limiting element is inserted into a gate input portion. If the field emission device including a number of blocks each having the above structure is constituted, a power switching device having sufficient redundancy against a short circuit between the gate and the emitter can be implemented.
摘要:
Disclosed herein are a cold-cathode power switching device and a method of manufacturing the same. The device has a high voltage resistance and can be manufactured with high yield though its element area is large to control large currents. In the method, arrays of miniature emitters are prepared, and the emitter arrays are adhered to a conductive substrate having trenches. The conductive substrate is cut along the trenches, forming a plurality of substrates. The gaps between these substrates are filled with insulating resin. As a result, a multi-module power switching device for controlling large currents is manufactured with high yield. Further, cold-cathode modules, each having a gate pad, are arranged on a cathode electrode made of a conducive substrate, insulating strips are formed on the cathode electrode, gate lines are formed on the insulating strips, and the gate pads are connected to the gate lines. The electrons emitted from the modules can be controlled at a time. Each module may have a cathode pad connected to a cathode line. Depressions are made in those part of an anode electrode which oppose the gate pads and cathode pads, providing a sufficient insulation distance between each emitter and the anode electrode. Hence, a cold-cathode power switching device of field emission type can be provided which has a high voltage resistance.
摘要:
A field emission cathode having an emitter provided with a sharp point for emission of electrons and a controlling gate electrode is composed of a supporting substrate, an emitter material layer formed of an emitter material, superposed on and attached fast to the supporting substrate, and provided with an emitter hole, an insulator layer so formed on the surface of the emitter material layer as to expose the tip part of the emitter projection therethrough, and an impurity diffusion layer formed on the surface of the insulator layer and enabled to function as an etching stopper layer.
摘要:
A field emission type cold cathode apparatus comprises a mother material layer made of an n-type silicon layer, a conical emitter having an arcuate side surface, an insulating layer formed in a surface region of the mother material layer in a manner to define the arcuate side surface of the emitter and having a concave portion formed to expose the tip portion of the conical emitter, the depth of the concave portion being determined such that the lower portion of the emitter covering a region more than half the height of the emitter is buried in the insulating layer, and a gate electrode formed over the insulating film in a manner to surround the emitter and having an open portion exposing the tip portion of the emitter, the diameter of the open portion being smaller than the diameter in the base portion of the emitter.
摘要:
There is provided a scanning probe microscopy comprising a probe 6 situated to face the surface of an sample 1, a first piezoelectric element 8 for moving the sample 1 and the probe 6 relative to each other in a first direction perpendicular to the surface of the sample, and second and third piezoelectric elements 3 and 4 for moving the probe and the sample relative to each other in second and third directions perpendicular to the first direction, thereby enabling the probe to scan the surface of the sample, wherein at least one of the first to third piezoelectric elements 8, 3 and 4, which is closest to the sample 1, is formed of a single crystal.
摘要:
A displacement generating apparatus having a gate-shaped structure is provided in which a plurality of bimorph-type piezoelectric elements are employed. The gate-shaped apparatus has high rigidity and a high resonance frequency, and can produce a carrying force greater than that of the conventional counterpart. Thus, the apparatus can move a heavier object at a high speed very accurately.