SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCING METHOD FOR THE SAME
    51.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCING METHOD FOR THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20070114539A1

    公开(公告)日:2007-05-24

    申请号:US11531577

    申请日:2006-09-13

    IPC分类号: H01L33/00

    摘要: A semiconductor light-emitting device includes: a first semiconductor layer; a light-emitting layer being disposed on the first semiconductor layer; a second semiconductor layer being disposed on the light-emitting layer, and metal electrodes connected to the first semiconductor layer and the second semiconductor layer. The light-emitting layer is lower in refractive index than the first semiconductor layer. The second semiconductor layer is lower in refractive index than the light-emitting layer. The metal electrodes supply a current to the light-emitting layer.

    摘要翻译: 一种半导体发光器件包括:第一半导体层; 发光层设置在所述第一半导体层上; 设置在发光层上的第二半导体层和连接到第一半导体层和第二半导体层的金属电极。 发光层的折射率低于第一半导体层。 第二半导体层的折射率低于发光层。 金属电极向发光层提供电流。

    Cold cathode and cold cathode discharge device
    54.
    发明授权
    Cold cathode and cold cathode discharge device 失效
    冷阴极和冷阴极放电装置

    公开(公告)号:US06781294B2

    公开(公告)日:2004-08-24

    申请号:US10098571

    申请日:2002-03-18

    IPC分类号: H01J105

    CPC分类号: H01J61/0677

    摘要: A cold cathode discharge device with high efficiency of light emission and long life is prepared by a cold cathode having both high secondary electron emission and anti-spattering property. Using carbon system cold cathodes constituted of a mixed phase of diamond and graphite, a cold cathode discharge device with high efficiency of light emission and long life is realized. It is desirable that an element having a wavelength of light emission equal to or shorter than 200 nanometers should be mixed in the discharge gas.

    摘要翻译: 具有高发光效率和长寿命的冷阴极放电器件通过具有高二次电子发射和抗溅射性能的冷阴极制备。使用由金刚石和石墨的混合相构成的碳系冷阴极,冷阴极 实现了高效率的发光和长寿命的放电装置。 期望在放电气体中混合具有等于或小于200纳米的发光波长的元件。

    Field emission device
    55.
    发明授权
    Field emission device 失效
    场发射装置

    公开(公告)号:US06456014B1

    公开(公告)日:2002-09-24

    申请号:US09606013

    申请日:2000-06-29

    IPC分类号: G09G310

    CPC分类号: H01J1/304 H01J2201/319

    摘要: A field emission device comprises an anode plate, an emitter plate having a plurality of filed emission portions that face the anode plate, and a gate plate having openings corresponding to the filed emission portions. The field emission device also comprises a current limiting element composed of a J FET or a MOSFET that is integrally formed with the gate plate and that is inserted between the gate plate and a gate voltage supply terminal. The loss caused by the emitter current is small as the current limiting element is inserted into a gate input portion. If the field emission device including a number of blocks each having the above structure is constituted, a power switching device having sufficient redundancy against a short circuit between the gate and the emitter can be implemented.

    摘要翻译: 场发射装置包括阳极板,具有面向阳极板的多个场发射部分的发射极板以及具有对应于场发射部分的开口的栅极板。 励磁发射装置还包括由与栅极板一体形成并且插入在栅极板和栅极电压提供端子之间的J FET或MOSFET组成的限流元件。 由于限流元件被插入到栅极输入部分中,由发射极电流引起的损耗很小。 如果构成包括多个具有上述结构的块的场发射器件,则可以实现具有足够的冗余以抵抗栅极和发射极之间的短路的功率开关器件。

    Cold-cathode power switching device of field-emission type
    56.
    发明授权
    Cold-cathode power switching device of field-emission type 失效
    场致发射型冷阴极功率开关器件

    公开(公告)号:US06297586B1

    公开(公告)日:2001-10-02

    申请号:US09263217

    申请日:1999-03-05

    IPC分类号: H01J116

    CPC分类号: H01J21/105 H01J1/3044

    摘要: Disclosed herein are a cold-cathode power switching device and a method of manufacturing the same. The device has a high voltage resistance and can be manufactured with high yield though its element area is large to control large currents. In the method, arrays of miniature emitters are prepared, and the emitter arrays are adhered to a conductive substrate having trenches. The conductive substrate is cut along the trenches, forming a plurality of substrates. The gaps between these substrates are filled with insulating resin. As a result, a multi-module power switching device for controlling large currents is manufactured with high yield. Further, cold-cathode modules, each having a gate pad, are arranged on a cathode electrode made of a conducive substrate, insulating strips are formed on the cathode electrode, gate lines are formed on the insulating strips, and the gate pads are connected to the gate lines. The electrons emitted from the modules can be controlled at a time. Each module may have a cathode pad connected to a cathode line. Depressions are made in those part of an anode electrode which oppose the gate pads and cathode pads, providing a sufficient insulation distance between each emitter and the anode electrode. Hence, a cold-cathode power switching device of field emission type can be provided which has a high voltage resistance.

    摘要翻译: 本文公开了一种冷阴极电力开关装置及其制造方法。 该器件具有高耐压性,并且可以以高产率制造,尽管其元件面积大以控制大电流。 在该方法中,制备微型发射体的阵列,并且发射极阵列粘附到具有沟槽的导电衬底上。 沿着沟槽切割导电衬底,形成多个衬底。 这些基板之间的间隙用绝缘树脂填充。 结果,以高产率制造用于控制大电流的多模块功率开关装置。 此外,在由导电基板制成的阴极上配置有具有栅极焊盘的冷阴极模块,在阴极上形成绝缘条,在绝缘条上形成栅极线,栅极连接到 门线。 可以一次控制从模块发射的电子。 每个模块可以具有连接到阴极线的阴极焊盘。 在与栅极焊盘和阴极焊盘相对的阳极电极的那些部分进行抑制,从而在每个发射极和阳极电极之间提供足够的绝缘距离。 因此,可以提供具有高耐电压性的场致发射型冷阴极功率开关器件。

    Field emission cathode structure, method for production thereof, and flat panel display device using same
    57.
    发明授权
    Field emission cathode structure, method for production thereof, and flat panel display device using same 失效
    场发射阴极结构,其制造方法以及使用其的平板显示装置

    公开(公告)号:US06281621B1

    公开(公告)日:2001-08-28

    申请号:US08551429

    申请日:1995-11-01

    IPC分类号: H01J130

    CPC分类号: H01J1/3042 H01J9/025

    摘要: A field emission cathode having an emitter provided with a sharp point for emission of electrons and a controlling gate electrode is composed of a supporting substrate, an emitter material layer formed of an emitter material, superposed on and attached fast to the supporting substrate, and provided with an emitter hole, an insulator layer so formed on the surface of the emitter material layer as to expose the tip part of the emitter projection therethrough, and an impurity diffusion layer formed on the surface of the insulator layer and enabled to function as an etching stopper layer.

    摘要翻译: 具有发射电子的尖端的发射极和控制栅电极的场发射阴极由支撑衬底,由发射极材料形成的发射极材料层叠加并紧贴在支撑衬底上,并且提供 具有发射极孔,如此形成在发射极材料层的表面上的绝缘体层,以暴露出发射极突起的顶端部分,以及形成在绝缘体层的表面上并能够用作蚀刻的杂质扩散层 塞层。

    Field emission type cold cathode apparatus and method of manufacturing
the same
    58.
    发明授权
    Field emission type cold cathode apparatus and method of manufacturing the same 失效
    场致发射型冷阴极装置及其制造方法

    公开(公告)号:US5898258A

    公开(公告)日:1999-04-27

    申请号:US788695

    申请日:1997-01-24

    IPC分类号: H01J1/304 H01J9/02 H01J1/30

    CPC分类号: H01J9/025

    摘要: A field emission type cold cathode apparatus comprises a mother material layer made of an n-type silicon layer, a conical emitter having an arcuate side surface, an insulating layer formed in a surface region of the mother material layer in a manner to define the arcuate side surface of the emitter and having a concave portion formed to expose the tip portion of the conical emitter, the depth of the concave portion being determined such that the lower portion of the emitter covering a region more than half the height of the emitter is buried in the insulating layer, and a gate electrode formed over the insulating film in a manner to surround the emitter and having an open portion exposing the tip portion of the emitter, the diameter of the open portion being smaller than the diameter in the base portion of the emitter.

    摘要翻译: 场致发射型冷阴极装置包括由n型硅层构成的母材层,具有弓形侧面的圆锥形发射体,以母材层的表面区域形成绝缘层,以限定弓形 并且具有形成为露出锥形发射器的尖端部分的凹部,凹部的深度被确定为使得覆盖发射器的高度的一半以上的区域的发射器的下部被掩埋 在所述绝缘层中形成有栅电极,所述栅电极以围绕所述发射极的方式形成在所述绝缘膜上方,并具有露出所述发射极的前端部的开口部,所述开口部的直径比所述绝缘膜的基部的直径小 发射器。

    Displacement generating apparatus
    60.
    发明授权
    Displacement generating apparatus 失效
    位移发生装置

    公开(公告)号:US5089740A

    公开(公告)日:1992-02-18

    申请号:US505131

    申请日:1990-04-05

    申请人: Tomio Ono

    发明人: Tomio Ono

    IPC分类号: H02N2/00 H01L41/09

    CPC分类号: H02N2/021 H01L41/0946

    摘要: A displacement generating apparatus having a gate-shaped structure is provided in which a plurality of bimorph-type piezoelectric elements are employed. The gate-shaped apparatus has high rigidity and a high resonance frequency, and can produce a carrying force greater than that of the conventional counterpart. Thus, the apparatus can move a heavier object at a high speed very accurately.

    摘要翻译: 提供具有栅极结构的位移产生装置,其中采用多个双压电晶片型压电元件。 门形装置具有高刚性和高共振频率,并且可以产生比常规对应物更大的承载力。 因此,该装置可以非常准确地高速移动较重的物体。