METHOD OF FORMING RESIST PATTERN AND NEGATIVE TONE-DEVELOPMENT RESIST COMPOSITION
    51.
    发明申请
    METHOD OF FORMING RESIST PATTERN AND NEGATIVE TONE-DEVELOPMENT RESIST COMPOSITION 有权
    形成电阻图案和负极色调发展电阻组合物的方法

    公开(公告)号:US20140004467A1

    公开(公告)日:2014-01-02

    申请号:US14003708

    申请日:2012-03-07

    IPC分类号: G03F7/32

    摘要: A method of forming a resist pattern including: forming a resist film on a substrate using a resist composition containing a base component (A) which exhibits decreased solubility in an organic solvent by action of an acid; exposing the resist film; and patterning by a negative-tone development using a developing solution containing the organic solvent, wherein the base component (A) contains a resin component (A1) having a structural unit (a0) which generates acid upon exposure and a structural unit (a1) derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the α-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid, and the developing solution contains a nitrile solvent.

    摘要翻译: 一种形成抗蚀剂图案的方法,包括:使用含有通过酸作用在有机溶剂中溶解度降低的基础组分(A)的抗蚀剂组合物在基材上形成抗蚀剂膜; 曝光抗蚀膜; 以及使用含有有机溶剂的显影液进行负色发展的图案化,其中,所述基材(A)含有具有曝光时产生酸的结构单元(a0)的树脂成分(A1)和结构单元(a1) 衍生自可以具有与被取代基取代的在α位上的碳原子键合的氢原子的丙烯酸酯,并且含有通过酸作用显示出极性增加的酸分解基团,显影液含有腈溶剂。

    RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND
    53.
    发明申请
    RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND 有权
    耐蚀组合物,形成耐蚀图案和聚合物的方法

    公开(公告)号:US20120282551A1

    公开(公告)日:2012-11-08

    申请号:US13402820

    申请日:2012-02-22

    摘要: A resist composition including a resin component which generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid, the resin component including a resin component having a structural unit represented by a general formula (a0-0-1) shown below in which R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R0-1 represents a single bond or a divalent linking group, each of R2, R3 and R4 independently represents a linear, branched or cyclic alkyl group which may have a non-aromatic substituent, or R3 and R4 may be bonded to each other to form a ring together with the sulfur atom, and X represents a non-aromatic divalent linking group or a single bond.

    摘要翻译: 一种抗蚀剂组合物,其包含在曝光后产生酸的树脂组分,并且在酸的作用下在显影液中显示出改变的溶解性,所述树脂组分包括具有由通式(a0-0-1)表示的结构单元的树脂组分 其中R表示氢原子,1至5个碳原子的烷基或1至5个碳原子的卤代烷基,R 0-1表示单键或二价连接基团,R 2,R 3和R 4各自 独立地表示可以具有非芳香族取代基的直链状,支链状或环状的烷基,或者R3和R4可以与硫原子一起形成环,X表示非芳香族二价连接基团或 单一债券。

    POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND POLYMERIC COMPOUND
    56.
    发明申请
    POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND POLYMERIC COMPOUND 有权
    正极性组合物,使用其的耐热图案的形成方法和聚合物

    公开(公告)号:US20100196821A1

    公开(公告)日:2010-08-05

    申请号:US12687430

    申请日:2010-01-14

    摘要: A positive resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under the action of acid and an acid-generator component (B) which generates acid upon exposure dissolved in an organic solvent (S), the base component (A) containing a polymeric compound (A1) including a structural unit (a0) derived from an acrylate ester having a cyclic group containing a sulfonyl group on the side chain thereof, a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group and a structural unit (a5) represented by general formula (a5-1) (Y1 represents an aliphatic hydrocarbon group; Z represents a monovalent organic group; a represents an integer of 1 to 3, and b represents an integer of 0 to 2, provided that a+b=1 to 3).

    摘要翻译: 一种正性抗蚀剂组合物,其包含在碱的作用下在碱性显影液中的溶解度变化的碱成分(A)和暴露于有机溶剂(S)时产生酸的酸产生剂成分(B),所述碱 含有由侧链上具有含有磺酰基的环状基团的丙烯酸酯衍生的结构单元(a0)的高分子化合物(A1)的组分(A),来源于丙烯酸酯的结构单元(a1) 酸解离,溶解抑制基团和由通式(a5-1)表示的结构单元(a5)(Y1表示脂族烃基; Z表示一价有机基团; a表示1〜3的整数,b表示 0〜2的整数,条件是a + b = 1〜3)。