公开(公告)号：US20050040031A1

公开(公告)日：2005-02-24

申请号：US10918865

申请日：2004-08-16

Applicant: David Burtner ,  Daniel Siegfried ,  Richard Blacker ,  Valery Alexeyev ,  John Keem ,  Vsevolod Zelenkov ,  Mark Krivoruchko

Inventor： David Burtner ,  Daniel Siegfried ,  Richard Blacker ,  Valery Alexeyev ,  John Keem ,  Vsevolod Zelenkov ,  Mark Krivoruchko

IPC: C23C14/32 ,  C23C14/35 ,  C23C14/56 ,  H01J37/09

CPC classification number: C23C14/564 ,  C23C14/35 ,  H01J37/09 ,  H01J2237/022 ,  H01J2237/08

Abstract: Shielding associated with an ion source, such as an anode layer source, reduces the amount and/or concentration of sputtered contaminants impinging and remaining on the surface of a target substrate. While passing the ion beam through to the target substrate, shielding can reduce the total amount of sputtered contaminants impinging the substrate before, during, and/or after passage of the substrate through the envelope of the etching beam. Particularly, a shield configuration that blocks the contaminants from impinging the substrate after the substrate passes through the etching beam (i.e., outside of the envelope of the etching beam) yields a higher quality substrate with reduced substrate contamination.

Abstract translation: 与离子源（例如阳极层源）相关联的屏蔽减少了撞击并残留在目标衬底表面上的溅射污染物的量和/或浓度。 当将离子束通过目标衬底时，屏蔽可以减少在衬底通过蚀刻束的外壳之前，之中和/或之后撞击衬底的溅射污染物的总量。 特别地，在衬底通过蚀刻光束（即，蚀刻光束的外壳之外）阻挡污染物撞击衬底的屏蔽结构产生具有降低的衬底污染的较高质量的衬底。

公开(公告)号：US20030030009A1

公开(公告)日：2003-02-13

申请号：US10261781

申请日：2002-10-02

Applicant: Hitachi, Ltd.

Inventor： Shigeru Tanaka ,  Isao Hashimoto

IPC: H01J027/00

CPC classification number: H01J37/317 ,  H01J27/08 ,  H01J2237/0041 ,  H01J2237/04756 ,  H01J2237/08

Abstract: An ion beam processing apparatus and a method of operating an ion source therefor are provided for reducing the frequency of breakdown due to particles, and for increasing an apparatus available time by operating the apparatus in a stable state for a long time and minimizing maintenance operations such as cleaning for the apparatus, and so on. A plasma generating gas is introduced into a vacuum chamber formed of a processing chamber and an ion source mounted thereto to produce a plasma from the gas, and an electric field is applied within the vacuum chamber to extract ions within the plasma as an ion beam. The ion source comprises an arc power supply, an acceleration power supply for applying an acceleration electrode with a positive potential to extract an ion beam, and a deceleration power supply for applying a deceleration electrode with a negative potential to prevent ions from flowing into the ion source. When the ion source is operated, the acceleration electrode is first applied with the positive potential, and then the deceleration electrode is applied with the negative potential.

Abstract translation: 提供离子束处理装置和操作其离子源的方法，用于减少由于颗粒引起的击穿频率，并且通过长时间操作该装置处于稳定状态并使维护操作最小化来增加设备可用时间 作为设备的清洁等。 将等离子体产生气体引入到由处理室形成的真空室和安装在其上的离子源，以从气体产生等离子体，并且在真空室内施加电场以提取等离子体内的离子作为离子束。 离子源包括电弧电源，用于施加正电位的加速电极以提取离子束的加速电源，以及用于施加具有负电位的减速电极的减速电源，以防止离子流入离子 资源。 当离子源运行时，首先施加正电位的加速电极，然后减速电极施加负电位。

公开(公告)号：US06368678B1

公开(公告)日：2002-04-09

申请号：US09495548

申请日：2000-02-01

Applicant: Terry Bluck ,  James H. Rogers

Inventor： Terry Bluck ,  James H. Rogers

IPC: H05H124

CPC classification number: H01J37/32009 ,  C23C16/26 ,  C23C16/50 ,  C23C16/513 ,  H01J37/3178 ,  H01J37/3233 ,  H01J2237/08 ,  H01J2237/0822 ,  H01J2237/3142

Abstract: A substrate processing system includes a processing chamber, an electrically floating substrate holder positioned in the chamber, a gas source for supplying a process gas to the chamber, at least one ion source located in the chamber, and a power source for energizing the ion source by positively biasing the anode and negatively biasing the cathode in a train of pulses of selectably variable duty cycle and magnitude to maintain a selected time averaged current, the bias in each instance being relative to the chamber. The ion source ionizes the process gas producing ions for processing a substrate disposed on the floating substrate holder in the chamber. The floating substrate is biased in accord with the net charge thereon as controlled by the energetic electron flux. One embodiment includes two such ion sources. In this case, the power source energizes the first and second anodes and the cathodes in a time multiplexed manner, such that only one of the first or second ion sources is energized at any time and interactions between ion sources are eliminated.

Abstract translation: 基板处理系统包括处理室，定位在室中的电浮置基板保持器，用于向室提供处理气体的气体源，位于室中的至少一个离子源，以及用于激励离子源的电源 通过积极偏置阳极并且以可选择的可变占空比和幅度的脉冲序列负偏置阴极以保持所选择的时间平均电流，每种情况下的偏压相对于室。 离子源离子化产生离子的工艺气体，以处理设置在腔室中的浮动衬底保持器上的衬底。 浮动衬底在其上由与能量电子通量控制的净电荷相一致地被偏置。 一个实施例包括两个这样的离子源。 在这种情况下，电源以时间复用的方式激励第一和第二阳极和阴极，使得在任何时间仅使第一或第二离子源中的仅一个被激励，并且消除离子源之间的相互作用。

公开(公告)号：US06203862B1

公开(公告)日：2001-03-20

申请号：US09076971

申请日：1998-08-07

Applicant: Terry Bluck ,  James H. Rogers ,  Sean P. McGinnis

Inventor： Terry Bluck ,  James H. Rogers ,  Sean P. McGinnis

IPC: H05H100

CPC classification number: C23C16/513 ,  C23C16/26 ,  H01J37/3178 ,  H01J2237/08 ,  H01J2237/0822 ,  H01J2237/3142

Abstract: A substrate processing system includes a processing chamber, a substrate holder positioned in the chamber, a gas source for supplying a process gas to the chamber, first and second ion sources located in the chamber, and a power source for energizing the first and second ion sources. Each ion source ionizes the process gas to produce ions for processing a substrate disposed on the substrate holder. The first and second ion sources include first and second anodes, respectively. The power source energizes the first and second anodes in a time multiplexed manner, such that only one of the first and second ion sources is energized at any time and interactions between ion sources are eliminated.

Abstract translation: 基板处理系统包括处理室，位于室中的基板保持器，用于向室提供处理气体的气体源，位于室中的第一和第二离子源，以及用于激励第一和第二离子的电源 来源。 每个离子源使工艺气体离子化以产生用于处理设置在衬底保持器上的衬底的离子。 第一和第二离子源分别包括第一和第二阳极。 电源以时间复用的方式激励第一和第二阳极，使得第一和第二离子源中的仅一个在任何时间被激励，并且消除了离子源之间的相互作用。

公开(公告)号：US6124003A

公开(公告)日：2000-09-26

申请号：US283289

申请日：1999-04-01

Applicant: Takashi Mikami ,  Hiroshi Murakami

Inventor： Takashi Mikami ,  Hiroshi Murakami

IPC: C23C14/32 ,  C23C16/48 ,  C23C16/50 ,  C23C16/505 ,  C23C16/513 ,  H01J37/317 ,  H01J37/32 ,  H01L21/205 ,  H05H1/46 ,  G21K1/087 ,  H01S27/02

CPC classification number: H01J37/32082 ,  C23C16/486 ,  C23C16/505 ,  H01J37/3178 ,  H01J2237/08

Abstract: A film is deposited on a target object by exposing the target object to film deposition plasma of a film deposition material gas while irradiating the target object with ion beams. An ion source is used for the irradiation with the ion beams. The ion source has a plasma container and an ion beam producing electrode system formed of four electrodes. The plasma container and the first electrode located in an inner position nearest to the plasma container carry a positive potential. The second electrode carries a negative potential or a lower potential than the film deposition plasma. The third electrode carries a positive potential or a higher potential than the film deposition plasma. The fourth electrode in the outer position remotest from the plasma container carries a ground potential.

Abstract translation: 通过将目标物体暴露于成膜材料气体的成膜等离子体，同时用离子束照射目标物体，将膜沉积在目标物体上。 离子源用于照射离子束。 离子源具有等离子体容器和由四个电极形成的离子束产生电极系统。 位于最靠近等离子体容器的内部位置的等离子体容器和第一电极携带正电位。 第二电极具有比电沉积等离子体更低的负电位或更低的电位。 第三电极具有比成膜等离子体的正电位或更高的电位。 距等离子体容器最远的外部位置的第四电极具有接地电位。

公开(公告)号：US6101972A

公开(公告)日：2000-08-15

申请号：US235943

申请日：1999-01-22

Applicant: Terry Bluck ,  James H. Rogers ,  Jun Xie

Inventor： Terry Bluck ,  James H. Rogers ,  Jun Xie

IPC: H05H1/46 ,  B01J19/08 ,  B05C21/00 ,  C23C16/26 ,  C23C16/27 ,  C23C16/44 ,  C23C16/50 ,  C23C16/513 ,  G11B5/84 ,  H01J37/317 ,  H05H1/00

CPC classification number: H01J37/3178 ,  C23C16/26 ,  C23C16/513 ,  H01J2237/08 ,  H01J2237/0822 ,  H01J2237/3142

Abstract: A substrate processing system includes a processing chamber, a substrate holder positioned in the chamber, a gas source for supplying a process gas to the chamber, at least one ion source located in the chamber, and a power source for energizing the ion source by positively biasing the anode and negatively biasing the cathode, the bias in each instance being relative to the chamber. The ion source ionizes the process gas producing ions for processing a substrate disposed on a substrate holder in the chamber. One embodiment includes two such ion sources. In this case, the power source energizes the first and second anodes and the cathodes in a time multiplexed manner, such that only one of the first or second ion sources is energized at any time and interactions between ion sources are eliminated.

Abstract translation: 基板处理系统包括处理室，位于所述室中的基板保持器，用于向所述室提供处理气体的气体源，位于所述室中的至少一个离子源，以及用于通过正向激励所述离子源的电源 偏置阳极并负偏压阴极，每种情况下的偏压相对于室。 离子源电离产生离子的工艺气体，以处理设置在腔室中的衬底保持器上的衬底。 一个实施例包括两个这样的离子源。 在这种情况下，电源以时间复用的方式激励第一和第二阳极和阴极，使得在任何时间仅使第一或第二离子源中的仅一个被激励，并且消除离子源之间的相互作用。

公开(公告)号：US5940724A

公开(公告)日：1999-08-17

申请号：US845970

申请日：1997-04-30

Applicant: Ronald A. Warren

Inventor： Ronald A. Warren

IPC: H01J27/08 ,  H01J37/317 ,  H01L21/425

CPC classification number: H01J27/08 ,  H01J37/3171 ,  H01J2237/08 ,  Y10S438/919

Abstract: The life of a source filament in an ion implantation tool is extended by providing in the ion implantation tool both an ion source reactant gas for providing a source of ion species to be implanted and a counteracting gas to counter the chemical transport from or to the filament, depending upon the reaction that occurs between the ion source gas ions and the source filament.

Abstract translation: 在离子注入工具中通过在离子注入工具中提供用于提供要注入的离子种类的源的离子源反应气体和抵消来自或向细丝的化学传递的抵消气体来延长离子注入工具中的源丝的寿命 取决于离子源气体离子和源极之间发生的反应。

公开(公告)号：US5838012A

公开(公告)日：1998-11-17

申请号：US822543

申请日：1997-03-19

Applicant: Marvin LaFontaine ,  Nobuhiro Tokoro ,  Victor Quattrini ,  Daniel Bissonnette ,  Takao Sakase

Inventor： Marvin LaFontaine ,  Nobuhiro Tokoro ,  Victor Quattrini ,  Daniel Bissonnette ,  Takao Sakase

IPC: G21K1/14 ,  H01J37/317 ,  H01J27/00

CPC classification number: H01J37/3171 ,  G21K1/14 ,  H01J2237/08

Abstract: A charge exchange cell for ion implanters employing a tandem accelerator has a hollow-wall construction with a heating element inserted inside the hollow wall.

Abstract translation: 用于使用串联加速器的离子注入机的电荷交换单元具有中空壁结构，其中加热元件插入中空壁内。

公开(公告)号：US5703372A

公开(公告)日：1997-12-30

申请号：US775145

申请日：1996-12-31

Applicant: Thomas N. Horsky ,  William E. Reynolds ,  Richard M. Cloutier

Inventor： Thomas N. Horsky ,  William E. Reynolds ,  Richard M. Cloutier

IPC: C23C14/48 ,  H01J27/08 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J27/08 ,  H01J2237/08 ,  H01J2237/31701

Abstract: An ion source for use in an ion implanter. The ion source comprises a gas confinement chamber having conductive chamber walls that bound a gas ionization zone. The gas confinement chamber includes an exit opening to allow ions to exit the chamber. A base positions the gas confinement chamber relative to structure for forming an ion beam from ions exiting the gas confinement chamber. A portion of a cathode extends into an opening in the gas confinement chamber. The cathode includes a cathode body defining an interior region in which a filament is disposed. The cathode body comprises an inner tubular member a coaxial outer tubular member and an endcap having a reduced cross section body portion with a radially extending rim. The endcap is pressed into the inner tubular member. The filament is energized to heat the endcap which, in turn, emits electrons into the gas ionization zone. The filament is protected from energized plasma in the gas ionization zone by the cathode body.

Abstract translation: 用于离子注入机的离子源。 离子源包括气体限制室，其具有结合气体电离区的导电室壁。 气体限制室包括允许离子离开室的出口。 基座相对于从离开气体限制室的离子形成离子束的结构定位气体限制室。 阴极的一部分延伸到气体限制室中的开口中。 阴极包括限定其中设置细丝的内部区域的阴极体。 阴极体包括内部管状构件，同轴外部管状构件和具有径向延伸边缘的具有减小的横截面主体部分的端盖。 将端盖压入内管状构件。 灯丝通电以加热端盖，其又将电子发射到气体电离区域中。 灯丝被阴极体保护在气体离子化区中被激发的等离子体。

公开(公告)号：US5656820A

公开(公告)日：1997-08-12

申请号：US560029

申请日：1995-11-17

Applicant: Atsushi Murakoshi ,  Kyoichi Suguro ,  Tatsuya Hatanaka

Inventor： Atsushi Murakoshi ,  Kyoichi Suguro ,  Tatsuya Hatanaka

IPC: C23F4/00 ,  H01J27/02 ,  H01J27/08 ,  H01J27/14 ,  H01J27/16 ,  H01J27/18 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/32477 ,  H01J27/022 ,  H01J27/08 ,  H01J27/16 ,  H01J2237/08 ,  H01J2237/31701

Abstract: An ion generation device includes a chamber in which plasma is generated, a first opening for introducing gas to be ionized by the plasma, and a second opening for irradiating ions generated from the gas. The inner wall of the chamber is coated with metal which is resistant to chemical etching by the ions and radicals.

Abstract translation: 离子产生装置包括其中产生等离子体的室，用于引入待等离子体离子化的气体的第一开口和用于照射由气体产生的离子的第二开口。 室内壁涂有金属，耐金属离子和自由基进行化学蚀刻。