摘要:
A relaxation oscillator is provided. A first current source provides a first current. A second current source provides a second current. A resistive element is coupled between the first current source and a ground. A capacitive element is coupled between the second current source and the ground. A comparator has a non-inverting input terminal, an inverting input terminal and an output terminal for outputting a compare result. A clock generator provides a clock signal according to the compare result. A switching unit alternately couples the non-inverting input terminal and the inverting input terminal of the comparator to the resistive element and the capacitive element according to the clock signal.
摘要:
One embodiment of the present invention sets forth a technique for technique for capturing and storing a level of an input signal using a dual-trigger low-energy flip-flop circuit that is fully-static and insensitive to fabrication process variations. The dual-trigger low-energy flip-flop circuit presents only three transistor gate loads to the clock signal and none of the internal nodes toggle when the input signal remains constant. One of the clock signals may be a low-frequency “keeper clock” that toggles less frequently than the other two clock signal that is input to two transistor gates. The output signal Q is set or reset at the rising clock edge using separate trigger sub-circuits. Either the set or reset may be armed while the clock signal is low, and the set or reset is triggered at the rising edge of the clock.
摘要:
In accordance with some embodiments of the present disclosure, an oscillator circuit comprises, a first pad associated with a first terminal of an oscillator and a second pad associated with a second terminal of the oscillator. The oscillator is configured to generate an oscillating signal and communicate the oscillating signal from the second terminal to a clock distributor coupled to the second pad. The oscillator circuit further comprises an oscillator gain element comprising an output node coupled to the first pad and an input node coupled to the second pad. The oscillator circuit also comprises a digital-to-analog converter (DAC) coupled to the first pad. The oscillator circuit additionally comprises a switching circuit coupled to the gain element. The switching circuit is configured to enable the gain element when the oscillator comprises a resonator and disable the gain element when the oscillator comprises a voltage controlled oscillating module.
摘要:
An object is to suppress change of a threshold voltage of a transistor in a shift register and to prevent the transistor from malfunctioning during a non-selection period. A pulse output circuit provided in the shift register regularly supplies a potential to a gate electrode of a transistor which is in a floating state so that the gate electrode is turned on during a non-selection period when a pulse is not outputted. In addition, supply of a potential to the gate electrode of the transistor is performed by turning on or off another transistor regularly.
摘要:
An integrated semiconductor device, including an insulated-gate field effect transistor biased to a constant level in order to obtain for the transistor an N-shaped drain-source current characteristic as a function of the drain-source voltage so that it presents a negative differential conductance zone, characterized in that it comprises means for applying, between the drain and the source of the field effect transistor, a voltage whose value is in the range of values the drain-source voltage corresponding to the negative conductance zone.
摘要:
A logic circuit including a resonant-tunneling transistor having a superlattice containing at least one quantum well layer, and a constant current source operatively connected between a base and an emitter of the transistor and supplying a constant current to said base. The transistor has a differential negative-resistance characteristic with at least one resonant point in a relationship between a current flowing in the base and a voltage between the base and emitter, and having at least two stable base current values at both sides of the resonant point on the characteristic, defined by the changeable base.multidot.emitter voltage. By supplying the base.multidot.emitter voltage having an amplitude of at least two amplitudes corresponding to the stable base current values, the transistor holds data corresponding to the base.multidot.emitter voltage.
摘要:
Transistor device exhibiting negative resistance characteristics includes an enhancement mode insulated gate field effect transistor interacting with an integral bipolar transistor. The transistor device has a bulk region separated from a shallow substrate region by a pn-junction located in proximity to source and drain regions of the field effect transistor. The source region also serves as the emitter, the substrate region serves as the base, and the bulk region serves as the collector of the integral bipolar transistor wherein the substrate base is left floating. Normally, the collector of the bipolar transistor is connected to the gate of the field effect transistor, and a resistor of finite value is included in the gate circuit. Oscillator, astable multivibrator, gated oscillator, gated astable multivibrator, and bistable multivibrator circuits are illustratively constructed with the transistor device.
摘要:
Some embodiments of the invention include a pre-pulse switching system. The pre-pulsing switching system may include: a power source configured to provide a voltage greater than 100 V; a pre-pulse switch coupled with the power source and configured to provide a pre-pulse having a pulse width of Tpp; and a main switch coupled with the power source and configured to provide a main pulse such that an output pulse comprises a single pulse with negligible ringing. The pre-pulse may be provided to a load by closing the pre-pulse switch while the main switch is open. The main pulse may be provided to the load by closing the main switch after a delay Tdelay after the pre-pulse switch has been opened.
摘要:
An integrated circuit, a code generating method, and a data exchange method are described. The integrated circuit includes a plurality of field effect transistors, a plurality of sense-amplifiers, and a processing circuit. Each field effect transistor is configured to represent an address in a mapping table and includes a source, a drain, a channel and a gate. Each sense-amplifier is connected to the drain and configured to sense an electric current from the drain and identify a threshold voltage of the corresponding field effect transistor. The processing circuit is configured to categorize each of the threshold voltages identified by the corresponding sense-amplifiers into a first state and a second state and mark the state of each of the threshold voltages at the corresponding address in the mapping table.
摘要:
A semiconductor device includes a setting circuit and a reset circuit. The setting circuit includes a latch circuit having first and second inverters driven by a first power voltage whose level is fixed and a first transistor which is switched between an ON state and an OFF state on the basis of a level of a second power voltage whose level varies depending on a surrounding environment, and sets data corresponding to a reference voltage to the latch circuit in response to the first transistor being switched to the ON state. The reset circuit includes an N-type second transistor connected to an output of the first inverter and an input of the second inverter. The second transistor sets data corresponding to the reference voltage to the latch circuit in response to the second voltage being equal to or lower than a predetermined voltage value.