Abstract:
A method for separating a metal-resin joint including the steps of: (1) immersing an article including a metal-resin joint with a counter electrode in an alkaline solution; and (2) applying a voltage over a certain time period between the metal portion of the joint and the counter electrode such that the potential of the metal portion is lower than that of a standard hydrogen electrode.
Abstract:
The present invention aims to provide processes and equipments for manufacturing semiconductors, according to which oxidation of wafer surfaces can be controlled by simple means and contaminants promoting oxidation and contaminants inviting a decreased yield of wafers can also be totally controlled. To achieve the object above, the present invention provides a process for manufacturing a semiconductor, characterized in that a substrate is treated while exposing the surface of the substrate with a negative ion-enriched gas; and an equipment for manufacturing a semiconductor comprising a gas channel through which a gas to be treated is passed; a negative ion-enriched gas generator consisting of a gas cleaner located at an upstream part of said gas channel and a negative ion generator located at a downstream part thereof: and means for supplying the resulting negative ion-enriched gas to the surface of each substrate.
Abstract:
The invention relates to novel methods for affecting, controlling and/or directing various reactions and/or reaction pathways or systems by exposing one or more components in a holoreaction system to at least one spectral energy pattern. In a first aspect of the invention, at least one spectral energy pattern can be applied to a reaction system. In a second aspect of the invention, at least one spectral energy conditioning pattern can be applied to a conditioning reaction system. The spectral energy conditioning pattern can, for example, be applied at a separate location from the reaction vessel (e.g., in a conditioning reaction vessel) or can be applied in (or to) the reaction vessel, but prior to other reaction system participants being introduced into the reaction vessel.
Abstract:
A method and apparatus that reduces the time required to clean a processing chamber employing a reactive plasma cleaning process. A plasma is formed in an Astron fluorine source generator from a flow of substantially pure inert-source gas. After formation of the plasma, a flow of a fluorine source gas is introduced therein such that the fluorine source flow accelerates at a rate no greater than 1.67 standard cubic centimeters per second2 (scc/s2). In this fashion, the plasma contains a plurality of radicals and dissociated inert-source gas atoms, defining a cleaning mixture. The ratio of inert-source gas to fluorine source is greater than 1:1.
Abstract:
The present invention provides a method cleaning of semiconductor devices through heterogeneous nucleation of cavitation bubbles. Heterogeneous nucleation is performed by applying sonic energy to a cleaning solution and a phase material in order to remove unwanted particles from semiconductor devices. A surfactant may be added to the phase material and the cleaning solution.
Abstract:
Embodiments of the invention are directed to substrate processing apparatuses and methods for processing substrates. In one embodiment, a substrate processing apparatus includes a processing chamber, a substrate holder inside of the processing chamber for holding a substrate, and a sonic box in the processing chamber for supplying sonic waves substantially perpendicularly to the substrate. The sonic box may comprises a membrane, and a transducer coupled to the membrane.
Abstract:
A process of producing a heat generating molded article comprising the steps of making an intermediate product by a papermaking process from a raw material composition containing at least an oxidizable metal powder, a moisture retaining agent, a fibrous material, and water and incorporating an electrolyte into the resulting intermediate product.
Abstract:
A method for producing a photoreceptor having a substrate subjected to a surface finishing treatment to result in a finished substrate surface, wherein the method includes:(a) analyzing the finished substrate surface by performing a first surface energy reading, a first ellipsometry reading, a first x-ray diffraction reading, and a first profilometry reading;(b) removing electrochemically via an alternating voltage or alternating current a portion of the finished substrate surface, thereby resulting in a cleaned substrate surface;(c) analyzing the cleaned substrate surface by performing a second surface energy reading, a second ellipsometry reading, a second x-ray diffraction reading, and a second profilometry reading, wherein the removing step (b) is accomplished to the extent that the second surface energy reading and the second ellipsometry reading are measurably changed from the first surface energy reading and the first ellipsometry reading, but the second x-ray diffraction reading and the second profilometry reading are measurably unchanged from the first x-ray diffraction reading and the first profilometry reading; and(d) depositing a layer of the photoreceptor on the cleaned substrate surface.
Abstract:
Process for electrolytic treatment of continuous running material in which the material runs through an electrolytic liquid and electric potential is applied to the material. In order to guarantee freedom from differential potential in the material to be treated in any form of electrolytic treatment, the differential potential in the treated material is measured after electrolytic treatment and at least the same degree of inverse compensating potential is applied to the material. In an apparatus to implement the process, comprising at least one treatment tank to hold the electrolytic liquid and through which the material being treated is guided by means of guide rolls, as well as comprising at least one pair of electrodes to apply electric potential in the material, at least one device is included to achieve this aim and which is used to measure the differential potential of the treated material, together with at least one pair of additional electrodes connected to an adjustable rectifier, where the device for measuring the differential potential is connected to the controlling part of the rectifier.
Abstract:
A method of manufacturing a metallic fiber in which from a convergent extended wire, which is formed by a metallic fiber and a matrix member which is formed of a metallic material and whose dissolvability is higher than the dissolvability of the metallic fiber, the matrix member is continuously dissolved and removed by an electrolytic processing in a plurality of electrolytic tanks which are arranged in the conveying direction of the convergent extended wire, wherein: the convergent extended wire is passed through electrolytes in the plurality of electrolytic tanks, which are arranged in the shape of a gentle convex arch at the vertical direction upper side which includes the conveying passage of the convergent extended wire, the convergent extended wire is passed above a plurality of feeding devices which are provided at the outer sides of the electrolytes and which are disposed in the same arch-shape so as to correspond to the electrolytic tanks, in each of the plurality of electrolytic tanks, the metallic fiber is maintained in one of a cathode reduction area and a passivation area, or alternatively, anode current is maintained at a predetermined potential which is closer to 0, and the matrix member is anode-electrolyzed. At this time, a method of manufacturing the twine of metallic fibers, further including the step of: intertwining the convergent extended member in the unit of two to four before the electrolytic processing, while the convergent extended member is formed by a forming device in a spiral shape whose diameter is larger than the diameter of a closely-intertwined twine.