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    Semiconductor Structures
    51.
    发明申请
    Semiconductor Structures 有权

    公开(公告)号：US20230051827A1

    公开(公告)日：2023-02-16

    申请号：US17957197

    申请日：2022-09-30

    申请人： UNIVERSITY OF LANCASTER

    发明人： Peter CARRINGTON ,  Evangelia DELLI

    IPC分类号： H01L21/02 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/18 ,  H01L33/00 ,  H01L33/04 ,  H01L33/12 ,  H01L33/30 ,  H01L29/15 ,  H01L29/20 ,  H01S5/34

    摘要： A semiconductor device comprises a substrate, one or more first III-semiconductor layers, and a plurality of superlattice structures between the substrate and the one or more first layers. The plurality of superlattice structures comprises an initial superlattice structure and one or more further superlattice structures between the initial superlattice structure and the one or more first layers. The plurality of superlattice structures is configured such that a strain-thickness product of semiconductor layer pairs in each superlattice structure of the one or more further superlattice structures is greater than or equal to a strain-thickness product of semiconductor layer pairs in superlattice structure(s) of the plurality of superlattice structures between that superlattice structure and the substrate. The plurality of superlattice structures is also configured such that a strain-thickness product of semiconductor layer pairs in at least one of the one or more further superlattice structures is greater than a strain-thickness product of semiconductor layer pairs in the initial superlattice structure.

    Monolithically Integrated Mid-Infrared Two-Dimensional Optical Phased Array
    53.
    发明申请
    Monolithically Integrated Mid-Infrared Two-Dimensional Optical Phased Array 有权

    公开(公告)号：US20230036709A1

    公开(公告)日：2023-02-02

    申请号：US17093612

    申请日：2020-11-09

    申请人： Jong-Dug Shin ,  Ray T. Chen ,  Jason Midkiff

    发明人： Jong-Dug Shin ,  Ray T. Chen ,  Jason Midkiff

    IPC分类号： H01S5/12 ,  H01S5/34 ,  H01S5/10

    摘要： A novel, monolithically integrated mid-IR optical phased array (OPA) structure which eliminates the wafer bonding process to achieve highly efficient surface emitting optical beam steering in two dimensions is disclosed. Since solar energy is about 15-20 times smaller than that at 1.55 um, mid-IR is more favorable for the atmospheric transmission due to lower solar radiance backgrounds. For the beam steering, thermo-optic phase shifting is used for azimuthal plane beam steering and laser wavelength tuning is used for elevation plane beam steering. The OPA structure disclosed comprises a wavelength- tunable a QCL, a 1×32 splitter, thermo-optic phase-shifters, and sub-wavelength grating emitters. The disclosed OPA provides a low-cost, low-loss, low-power consumption, robust, small footprint, apparatus that may be used with expendable UAV swarms. A LiDAR may be created by monolithically integrating a QCD with the apparatus. Other embodiments are described and claimed.

    Light emitting device and projector
    54.
    发明授权
    Light emitting device and projector 有权

    公开(公告)号：US11569636B2

    公开(公告)日：2023-01-31

    申请号：US16912781

    申请日：2020-06-26

    申请人： Seiko Epson Corporation

    发明人： Takashi Miyata

    IPC分类号： H01S5/34 ,  G03B21/20 ,  H01S5/343 ,  H01S5/042 ,  H01S5/183 ,  G03B33/12

    摘要： A light emitting device includes a substrate, a laminated structure provided to the substrate, and including a plurality of columnar parts, and an electrode disposed at an opposite side to the substrate of the laminated structure, wherein the columnar parts have a light emitting layer, the columnar parts are disposed between the electrode and the substrate, light generated in the light emitting layer propagates through the plurality of columnar parts to cause laser oscillation, and the electrode is provided with a hole.

    Tunable Light Source
    56.
    发明申请
    Tunable Light Source 有权

    公开(公告)号：US20230006419A1

    公开(公告)日：2023-01-05

    申请号：US17784882

    申请日：2019-12-16

    申请人： Nippon Telegraph and Telephone Corporation

    发明人： Yuta Ueda ,  Takahiko Shindo ,  Mitsuteru Ishikawa

    IPC分类号： H01S5/068 ,  H01S5/06 ,  H01S5/343 ,  H01S5/125 ,  H01S5/22 ,  H01S5/34

    摘要： A tunable laser that is characterized by including a gain waveguide ACT made of an optically active semiconductor material, and a tunable wavelength filter TWF that selects light of a specific wavelength using current injection, which are integrated on a compound semiconductor substrate S, in which at least one or more of the tunable wavelength filters TWF are formed to select a specific wavelength of light from the light from the waveguide ACT and return the selected specific wavelength of light back to the waveguide ACT, and a semiconductor mixed crystal material constituting the tunable wavelength filter TWF has a strained multiple quantum well structure MQW in which a mixed crystal material ratio changes periodically.

    MULTI-ACTIVE-REGION CASCADED SEMICONDUCTOR LASER
    60.
    发明申请
    MULTI-ACTIVE-REGION CASCADED SEMICONDUCTOR LASER 有权

    公开(公告)号：US20220344904A1

    公开(公告)日：2022-10-27

    申请号：US17762887

    申请日：2021-05-24

    申请人： SUZHOU EVERBRIGHT PHOTONICS CO., LTD. ,  EVERBRIGHT INSTITUTE OF SEMICONDUCTOR PHOTONICS CO., LTD.

    发明人： Jun WANG ,  Yao XIAO ,  Shaoyang TAN ,  Heng LIU ,  Quanling LI

    IPC分类号： H01S5/183 ,  H01S5/34 ,  H01S5/028

    摘要： The present application relates to the technical field of semiconductor optoelectronics, in particular to a multi-active-region cascaded semiconductor laser. The multi-active-region cascaded semiconductor laser comprises: a plurality of cascaded active regions, wherein each cascaded active region comprises a plurality of active regions; and a tunnel junction, arranged on at least one side of the cascaded active region and electrically connected with the cascaded active region; wherein in the cascaded active region, at least one group of adjacent active regions are connected through a barrier layer. In this way, more active regions are added in the periodic gain structure, which improves the internal quantum efficiency of the device and also reduces the carrier density, thereby obtaining more gains. The barrier layer connection does not have the property of introducing a new pn junction, so the layer will not increase the turn-on voltage for device operation, and meanwhile the epitaxial growth is much simpler than that of the tunnel junction.