公开(公告)号：US20080182404A1

公开(公告)日：2008-07-31

申请号：US12017930

申请日：2008-01-22

Applicant: ALEXANDROS T. DEMOS ,  Li-Qun Xia ,  Bok Hoen Kim ,  Derek R. Witty ,  Hichem M'Saad

Inventor： ALEXANDROS T. DEMOS ,  Li-Qun Xia ,  Bok Hoen Kim ,  Derek R. Witty ,  Hichem M'Saad

IPC: H01L21/4763

CPC classification number: H01L21/7682 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3146 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76835 ,  H01L2221/1047 ,  Y10S438/931

Abstract: Methods are provided for forming a structure that includes an air gap. In one embodiment, a method is provided for forming a damascene structure comprises depositing a porous low dielectric constant layer by a method including reacting an organosilicon compound and a porogen-providing precursor, depositing a porogen-containing material, and removing at least a portion of the porogen-containing material, depositing an organic layer on the porous low dielectric constant layer by reacting the porogen-providing precursor, forming a feature definition in the organic layer and the porous low dielectric constant layer, filing the feature definition with a conductive material therein, depositing a mask layer on the organic layer and the conductive material disposed in the feature definition, forming apertures in the mask layer to expose the organic layer, removing a portion or all of the organic layer through the apertures, and forming an air gap adjacent the conductive material.

Abstract translation: 提供了用于形成包括气隙的结构的方法。 在一个实施例中，提供了一种用于形成镶嵌结构的方法，包括通过包括使有机硅化合物和致孔剂提供前体反应的方法沉积多孔低介电常数层，沉积含致孔剂的材料，以及除去至少一部分 含致孔剂的材料，通过使造孔剂提供前体反应，在有机层中形成特征定义和多孔低介电常数层，在多孔低介电常数层上沉积有机层，用导电材料填充特征定义 在有机层上沉积掩模层和设置在特征定义中的导电材料，在掩模层中形成孔以暴露有机层，通过孔去除部分或全部有机层，并形成相邻的气隙 导电材料。

公开(公告)号：US20080119058A1

公开(公告)日：2008-05-22

申请号：US11562021

申请日：2006-11-21

Applicant: DUSTIN W. HO ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Kelvin Chan ,  Nagarajan Rajagopalan ,  Visweswaren Sivaramakrishnan

Inventor： DUSTIN W. HO ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Kelvin Chan ,  Nagarajan Rajagopalan ,  Visweswaren Sivaramakrishnan

IPC: H01L21/312

CPC classification number: H01L21/31695 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351

Abstract: A method for depositing a low dielectric constant film by flowing a oxidizing gas into a processing chamber, flowing an organosilicon compound from a bulk storage container through a digital liquid flow meter at an organosilicon flow rate to a vaporization injection valve, vaporizing the organosilicon compound and flowing the organosilicon compound and a carrier gas into the processing chamber, maintaining the organosilicon flow rate to deposit an initiation layer, flowing a porogen compound from a bulk storage container through a digital liquid flow meter at a porogen flow rate to a vaporization injection valve, vaporizing the porogen compound and flowing the porogen compound and a carrier gas into the processing chamber, increasing the organosilicon flow rate and the porogen flow rate while depositing a transition layer, and maintaining a second organosilicon flow rate and a second porogen flow rate to deposit a porogen containing organosilicate dielectric layer.

Abstract translation: 一种通过使氧化气体流入处理室来沉积低介电常数膜的方法，使有机硅化合物从大容量储存容器通过数字液体流量计以有机硅流速流动到汽化喷射阀，汽化有机硅化合物和 使有机硅化合物和载气流入处理室，保持有机硅流速沉积起始层，使致孔剂化合物从大容量储存容器通过数字液体流量计以致孔剂流速流动到蒸发喷射阀， 蒸发致孔剂化合物并使致孔剂化合物和载气流入处理室，同时沉积过渡层而增加有机硅流速和致孔剂流速，并保持第二有机硅流速和第二致孔剂流速以沉积 含致孔剂的有机硅酸盐介电层。

公开(公告)号：US07297376B1

公开(公告)日：2007-11-20

申请号：US11483842

申请日：2006-07-07

Applicant: Kang Sub Yim ,  Kelvin Chan ,  Nagarajan Rajagopalan ,  Josephine Ju-Hwei Chang Liu ,  Sang H. Ahn ,  Yi Zheng ,  Sang In Yi ,  Vu Ngoc Tran Nguyen ,  Alexandros T. Demos

Inventor： Kang Sub Yim ,  Kelvin Chan ,  Nagarajan Rajagopalan ,  Josephine Ju-Hwei Chang Liu ,  Sang H. Ahn ,  Yi Zheng ,  Sang In Yi ,  Vu Ngoc Tran Nguyen ,  Alexandros T. Demos

IPC: H05H1/24

CPC classification number: C23C16/029 ,  C23C16/401 ,  C23C16/56

Abstract: A method for depositing a low dielectric constant film is provided by positioning a substrate within a processing chamber having a powered electrode, and flowing into the processing chamber an initiation gas mixture of a flow rate of one or more organosilicon compounds and a flow rate of one or more oxidizing gases to deposit an initiation layer by applying an RF power to the electrode. The organosilicon compound flow rate is then ramped-up to a final flow rate to deposit a first transition layer, upon which one or more porogen compounds is introduced and the flow rate porogen compound is ramped up to a final deposition rate while depositing a second transition layer. A porogen doped silicon oxide layer is then deposited by flowing the final porogen and organosilicon flow rates until the RF power is turned off.

Abstract translation: 通过将基板定位在具有动力电极的处理室内，并且将一种或多种有机硅化合物的流速和流速为1的起始气体混合物流入处理室，从而提供了一种沉积低介电常数膜的方法 或更多的氧化气体，以通过向电极施加RF功率来沉积起始层。 然后将有机硅化合物流速升高至最终流速以沉积第一过渡层，在该第一过渡层上引入一种或多种致孔剂化合物，并且将流速致孔剂化合物倾斜至最终沉积速率，同时沉积第二过渡层 层。 然后通过流动最终致孔剂和有机硅流速来沉积致孔剂掺杂的氧化硅层，直到RF功率关闭。

公开(公告)号：US20070207275A1

公开(公告)日：2007-09-06

申请号：US11508544

申请日：2006-08-23

Applicant: Thomas Nowak ,  Kang Sub Yim ,  Sum-Yee Betty Tang ,  Kwangduk Douglas Lee ,  Vu Ngoc Tran Nguyen ,  Dennis Singleton ,  Martin Jay Seamons ,  Karthik Janakiraman ,  Ganesh Balasubramanian ,  Mohamed Ayoub ,  Wendy H. Yeh ,  Alexandros T. Demos ,  Hichem M'Saad

Inventor： Thomas Nowak ,  Kang Sub Yim ,  Sum-Yee Betty Tang ,  Kwangduk Douglas Lee ,  Vu Ngoc Tran Nguyen ,  Dennis Singleton ,  Martin Jay Seamons ,  Karthik Janakiraman ,  Ganesh Balasubramanian ,  Mohamed Ayoub ,  Wendy H. Yeh ,  Alexandros T. Demos ,  Hichem M'Saad

IPC: H05H1/24

CPC classification number: C23C16/4405 ,  B08B7/0035 ,  H01J37/32357 ,  H01J37/32862

Abstract: Methods for cleaning semiconductor processing chambers used to process carbon-containing films, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films including silicon, oxygen, and carbon are provided. The methods include using a remote plasma source to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber. The reactive species are generated from an oxygen-containing gas, such as O2, and/or a halogen-containing gas, such as NF3. An oxygen-based ashing process may also be used to remove carbon deposits from the interior surfaces of the chamber before the chamber is exposed to the reactive species from the remote plasma source.

Abstract translation: 提供了用于处理用于处理含碳膜的半导体处理室的方法，例如非晶碳膜，包含硅和碳的阻挡膜以及包括硅，氧和碳的低介电常数膜。 这些方法包括使用远程等离子体源来产生在腔室中没有RF功率的情况下清洁处理室的内表面的反应物质。 反应性物质由含氧气体（例如O 2）和/或含卤素气体如NF 3 N产生。 在室暴露于来自远程等离子体源的反应物质之前，还可以使用氧基灰化方法从室的内表面去除碳沉积物。

公开(公告)号：US07265062B2

公开(公告)日：2007-09-04

申请号：US10636517

申请日：2003-08-07

Applicant: Robert P. Mandal ,  Alexandros T. Demos ,  Timothy Weidman ,  Michael P. Nault ,  Nikolaos Bekiaris ,  Scott Jeffrey Weigel ,  Lee A. Senecal ,  James E. Mac Dougall ,  Hareesh Thridandam

Inventor： Robert P. Mandal ,  Alexandros T. Demos ,  Timothy Weidman ,  Michael P. Nault ,  Nikolaos Bekiaris ,  Scott Jeffrey Weigel ,  Lee A. Senecal ,  James E. Mac Dougall ,  Hareesh Thridandam

IPC: H01L21/31

CPC classification number: H01L21/02126 ,  C01B33/16 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695

Abstract: A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution.

Abstract translation: 一种使用溶胶 - 凝胶方法沉积多孔氧化硅基膜的方法，该方法使用前体溶液制剂，其包含纯化的非离子表面活性剂和其它组分中的添加剂，其中添加剂是形成离子的离子添加剂或胺添加剂 铵型盐在酸性前体溶液中。 使用这种前体溶液制剂可以形成介电常数小于2.5，适当的机械性能和最低水平的碱金属杂质的薄膜。 在一个实施方案中，这通过纯化表面活性剂并将离子或胺添加剂例如四烷基铵盐和胺添加到原料前体溶液中来实现。

公开(公告)号：US07259381B2

公开(公告)日：2007-08-21

申请号：US11006305

申请日：2004-12-06

Applicant: Josephine J. Liu ,  Alexandros T. Demos ,  Hichem M'Saad

Inventor： Josephine J. Liu ,  Alexandros T. Demos ,  Hichem M'Saad

IPC: G21K5/10

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/32935

Abstract: The Grunn equation: Depth = 0.046 ⁢ ⁢ ( V acc ) n ρ is modified to accurately predict depth of electron beam penetration into a target material. A two-layer stack is formed comprising a thickness of the target material overlying a detection material exhibiting greater sensitivity to the electron beam than the target material. The target material is exposed to electron beam radiation of different energies, with the threshold energy resulting in a changed physical property of the detection material below a predetermined value marking a penetration depth corresponding to the target material thickness. Utilizing the threshold energy (Vacc), the target material thickness (Depth), and the known target material density (ρ), the numerical power “n” of the Grunn equation is calculated to fit experimental results. So modified, the Grunn equation accurately predicts the depth of penetration of electron beams of varying energies into the target material.

Abstract translation: Grunn方程式：