公开(公告)号：US07265062B2

公开(公告)日：2007-09-04

申请号：US10636517

申请日：2003-08-07

申请人： Robert P. Mandal ,  Alexandros T. Demos ,  Timothy Weidman ,  Michael P. Nault ,  Nikolaos Bekiaris ,  Scott Jeffrey Weigel ,  Lee A. Senecal ,  James E. Mac Dougall ,  Hareesh Thridandam

发明人： Robert P. Mandal ,  Alexandros T. Demos ,  Timothy Weidman ,  Michael P. Nault ,  Nikolaos Bekiaris ,  Scott Jeffrey Weigel ,  Lee A. Senecal ,  James E. Mac Dougall ,  Hareesh Thridandam

IPC分类号： H01L21/31

CPC分类号： H01L21/02126 ,  C01B33/16 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695

摘要： A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution.

摘要翻译： 一种使用溶胶 - 凝胶方法沉积多孔氧化硅基膜的方法，该方法使用前体溶液制剂，其包含纯化的非离子表面活性剂和其它组分中的添加剂，其中添加剂是形成离子的离子添加剂或胺添加剂 铵型盐在酸性前体溶液中。 使用这种前体溶液制剂可以形成介电常数小于2.5，适当的机械性能和最低水平的碱金属杂质的薄膜。 在一个实施方案中，这通过纯化表面活性剂并将离子或胺添加剂例如四烷基铵盐和胺添加到原料前体溶液中来实现。

公开(公告)号：US06576568B2

公开(公告)日：2003-06-10

申请号：US09823932

申请日：2001-03-29

申请人： Robert P Mandal ,  Alexandros T Demos ,  Timothy Weidman ,  Michael P Nault ,  Nikolaos Bekiaris ,  Scott J Weigel ,  Lee A. Senecal ,  James E. MacDougall ,  Hareesh Thridandam

发明人： Robert P Mandal ,  Alexandros T Demos ,  Timothy Weidman ,  Michael P Nault ,  Nikolaos Bekiaris ,  Scott J Weigel ,  Lee A. Senecal ,  James E. MacDougall ,  Hareesh Thridandam

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  C01B33/16 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695 ,  Y10S438/96 ,  Y10T428/249953 ,  Y10T428/249969

摘要： A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution. In some embodiments, the ionic additive is a compound chosen from a group of cationic additives of the general composition [NR(CH3)3]+A−, where R is a hydrophobic ligand of chain length 1 to 24, including tetramethylammonium and cetyltrimethylammonium, and A− is an anion, which may be chosen from the group consisting essentially of formate, nitrate, oxalate, acetate, phosphate, carbonate, and hydroxide and combinations thereof. Tetramethylammonium salts, or more generally tetraalkylammonium salts, or tetraorganoammonium salts or organoamines in acidic media are added to surfactant templated porous oxide precursor formulations to increase the ionic content, replacing alkali ion impurities (sodium and potassium) removed during surfactant purification, but which are found to exhibit beneficial effects in promoting the formation of the resulting dielectric.

公开(公告)号：US06896955B2

公开(公告)日：2005-05-24

申请号：US10219164

申请日：2002-08-13

申请人： Robert P. Mandal ,  Alexandros T. Demos ,  Timothy Weidman ,  Michael P. Nault ,  Nikolaos Bekiaris ,  Scott J. Weigel ,  Lee A. Senecal ,  James E. MacDougal ,  Hareesh Thridandam

发明人： Robert P. Mandal ,  Alexandros T. Demos ,  Timothy Weidman ,  Michael P. Nault ,  Nikolaos Bekiaris ,  Scott J. Weigel ,  Lee A. Senecal ,  James E. MacDougal ,  Hareesh Thridandam

IPC分类号： B05D5/12 ,  B05D7/24 ,  C01B33/16 ,  C09D5/25 ,  C09D183/02 ,  H01L21/20 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  B32B3/00

CPC分类号： H01L21/02126 ,  C01B33/16 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695 ,  Y10S438/96 ,  Y10T428/249953 ,  Y10T428/249969

摘要： A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution. In some embodiments, the ionic additive is a compound chosen from a group of cationic additives of the general composition [NR(CH3)3]+A−, where R is a hydrophobic ligand of chain length 1 to 24, including tetramethylammonium and cetyltrimethylammonium, and A− is an anion, which may be chosen from the group consisting essentially of formate, nitrate, oxalate, acetate, phosphate, carbonate, and hydroxide and combinations thereof. Tetramethylammonium salts, or more generally tetraalkylammonium salts, or tetraorganoammonium salts or organoamines in acidic media are added to surfactant templated porous oxide precursor formulations to increase the ionic content, replacing alkali ion impurities (sodium and potassium) removed during surfactant purification, but which are found to exhibit beneficial effects in promoting the formation of the resulting dielectric.

摘要翻译： 一种使用溶胶 - 凝胶方法沉积多孔氧化硅基膜的方法，该方法使用前体溶液制剂，其包含纯化的非离子表面活性剂和其它组分中的添加剂，其中添加剂是形成离子的离子添加剂或胺添加剂 铵型盐在酸性前体溶液中。 使用这种前体溶液制剂可以形成介电常数小于2.5，适当的机械性能和最低水平的碱金属杂质的薄膜。 在一个实施方案中，这通过纯化表面活性剂并将离子或胺添加剂例如四烷基铵盐和胺添加到原料前体溶液中来实现。 在一些实施方案中，离子添加剂是选自一般组成的阳离子添加剂组合物[NR（CH 3）3） 其中R是链长1至24的疏水性配体，包括四甲基铵和十六烷基三甲基铵，并且A是一种阴离子，其可以选自下组： 基本上由甲酸盐，硝酸盐，草酸盐，乙酸盐，磷酸盐，碳酸盐和氢氧化物组成。 在表面活性剂模板化的多孔氧化物前体制剂中加入四甲基铵盐或更一般的四烷基铵盐或四官能铵盐或有机胺，以增加离子含量，代替在表面活性剂纯化过程中除去的碱离子杂质（钠和钾），但发现 以促进所形成的电介质的形成。

公开(公告)号：US06936551B2

公开(公告)日：2005-08-30

申请号：US10428374

申请日：2003-05-01

申请人： Farhad Moghadam ,  Jun Zhao ,  Timothy Weidman ,  Rick J. Roberts ,  Li-Qun Xia ,  Alexandros T. Demos

发明人： Farhad Moghadam ,  Jun Zhao ,  Timothy Weidman ,  Rick J. Roberts ,  Li-Qun Xia ,  Alexandros T. Demos

IPC分类号： B05D3/06 ,  B05D7/24 ,  C23C16/26 ,  C23C16/40 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/31 ,  H01L21/469

CPC分类号： B05D1/60 ,  B05D3/068 ,  B05D3/141 ,  B05D5/08 ,  B05D5/12 ,  C08G77/50 ,  C23C16/26 ,  C23C16/401 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/0276 ,  H01L21/0277 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/3146 ,  H01L21/3148 ,  H01L21/316 ,  H01L21/31625 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76829

摘要： One embodiment of the present invention is a method for fabricating a low-k dielectric film that includes steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating the lower-k dielectric film.

摘要翻译： 本发明的一个实施例是一种制造低k电介质膜的方法，包括以下步骤：（a）化学气相沉积低k电介质膜; 和（b）电子束处理低k电介质膜。

公开(公告)号：US07256139B2

公开(公告)日：2007-08-14

申请号：US11045650

申请日：2005-01-28

申请人： Farhad Moghadam ,  Jun Zhao ,  Timothy Weidman ,  Rick J. Roberts ,  Li-Quan Xia ,  Alexandros T. Demos

发明人： Farhad Moghadam ,  Jun Zhao ,  Timothy Weidman ,  Rick J. Roberts ,  Li-Quan Xia ,  Alexandros T. Demos

IPC分类号： H01L21/31

CPC分类号： B05D1/60 ,  B05D3/068 ,  B05D3/141 ,  B05D5/08 ,  B05D5/12 ,  C08G77/50 ,  C23C16/26 ,  C23C16/401 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/0276 ,  H01L21/0277 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/3146 ,  H01L21/3148 ,  H01L21/316 ,  H01L21/31625 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76829

摘要： One embodiment of the present invention is a method for fabricating a low-k dielectric film that included steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating the lower-k dielectric film.

摘要翻译： 本发明的一个实施例是一种制造低k电介质膜的方法，包括以下步骤：（a）化学气相沉积低k电介质膜; 和（b）电子束处理低k电介质膜。

公开(公告)号：US07226853B2

公开(公告)日：2007-06-05

申请号：US10197936

申请日：2002-07-16

申请人： Nikolaos Bekiaris ,  Timothy Weidman ,  Michael D. Armacost ,  Mehul B. Naik

发明人： Nikolaos Bekiaris ,  Timothy Weidman ,  Michael D. Armacost ,  Mehul B. Naik

IPC分类号： H01L21/4763

CPC分类号： H01L21/022 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3146 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829 ,  H01L21/76835

摘要： A method of forming a dual damascene structure on a substrate having a dielectric layer already formed thereon. In one embodiment the method includes depositing a first hard mask layer over the dielectric layer; depositing a second hard mask layer on the first hard mask layer; depositing a third hard mask layer on the second hard mask layer and completing formation of the dual damascene structure by etching a metal wiring pattern and a via pattern in the dielectric layer and filling the etched metal wiring pattern and via pattern with a conductive material. In one particular embodiment the second hard mask layer is an amorphous carbon layer and the third hard mask layer is a silicon-containing material.

摘要翻译： 在其上已经形成有电介质层的基板上形成双镶嵌结构的方法。 在一个实施例中，该方法包括在介电层上沉积第一硬掩模层; 在第一硬掩模层上沉积第二硬掩模层; 在第二硬掩模层上沉积第三硬掩模层，并通过蚀刻电介质层中的金属布线图案和通孔图案并用导电材料填充蚀刻的金属布线图案和通孔图案，完成双镶嵌结构的形成。 在一个特定实施例中，第二硬掩模层是无定形碳层，第三硬掩模层是含硅材料。

公开(公告)号：US06806203B2

公开(公告)日：2004-10-19

申请号：US10101540

申请日：2002-03-18

申请人： Timothy Weidman ,  Nikolaos Bekiaris ,  Josephine Chang ,  Phong H. Nguyen

发明人： Timothy Weidman ,  Nikolaos Bekiaris ,  Josephine Chang ,  Phong H. Nguyen

IPC分类号： H01L21302

CPC分类号： H01L21/76835 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829

摘要： A method of forming a dual damascene structure on a substrate having a dielectric layer already formed thereon. In one embodiment the method includes depositing a first hard mask layer over the dielectric layer and depositing a second hard mask layer on the first hard mask layer, where the second hard mask layer is an amorphous silicon layer. Afterwards, formation of the dual damascene structure is completed by etching a metal wiring pattern and a via pattern in the dielectric layer and filling the etched metal wiring pattern and via pattern with a conductive material.

摘要翻译： 在其上已经形成有电介质层的基板上形成双镶嵌结构的方法。 在一个实施例中，该方法包括在电介质层上沉积第一硬掩模层并在第一硬掩模层上沉积第二硬掩模层，其中第二硬掩模层是非晶硅层。 然后，通过在电介质层中蚀刻金属布线图案和通孔图案并用导电材料填充蚀刻的金属布线图案和通孔图案来完成双镶嵌结构的形成。

公开(公告)号：US06583071B1

公开(公告)日：2003-06-24

申请号：US09692660

申请日：2000-10-18

申请人： Timothy Weidman ,  Yunfeng Lu ,  Michael P Nault ,  Michael Barnes ,  Farhad Moghadam

发明人： Timothy Weidman ,  Yunfeng Lu ,  Michael P Nault ,  Michael Barnes ,  Farhad Moghadam

IPC分类号： H01L2131

CPC分类号： H01L21/3122 ,  C23C16/30 ,  C23C16/325 ,  C23C16/401 ,  C23C16/4486 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/312 ,  H01L21/3124 ,  H01L21/3125 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76834

摘要： A process for forming a extremely low dielectric constant film over a substrate. The process includes coating a substrate with a solution comprising a soluble source of silicon oxide, water, a solvent, a surfactant and a catalyst using an ultrasonic spray nozzle. The coated substrate is then subsequently treated to harden the solution into an extremely low dielectric constant film.

摘要翻译： 一种在衬底上形成极低介电常数膜的方法。 该方法包括使用超声波喷嘴将包含可溶性氧化硅源，水，溶剂，表面活性剂和催化剂的溶液涂覆在基材上。 然后将涂覆的基底随后处理以将溶液硬化成极低介电常数的膜。

公开(公告)号：US06875687B1

公开(公告)日：2005-04-05

申请号：US09692527

申请日：2000-10-18

申请人： Timothy Weidman ,  Michael P Nault ,  Josephine J Chang

发明人： Timothy Weidman ,  Michael P Nault ,  Josephine J Chang

IPC分类号： C23C16/32 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/02167 ,  C23C16/325 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/312 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76828 ,  H01L21/76829 ,  Y10S438/97

摘要： Specific embodiments of the invention provide a silicon-carbide-type or silicon oxycarbide (also often called carbon-doped-oxide [CDO] or organosilicate glass) capping material and method for depositing this capping material on ELK films which are used as a dielectric material in integrated circuits. The ELK film may include any ELK film including but not limited to inorganic, organic and hybrid dielectric materials and their respective porous versions. The silicon-carbide-type material may be an amorphous silicon carbide type material such as the commercially available BLOk™ material, or a carbon-doped oxide material such as the commercially available Black Diamond™ both of which are developed by Applied Materials of Santa Clara, Calif. The amorphous silicon carbide (a-SiC) material is deposited using a plasma process in a non-oxidizing environment and the CDO-type material is deposited using an oxygen-starved plasma process. The non-oxidative or oxygen-starved plasma processes do not significantly degrade the underlying film's chemical and electrical properties. The CDO material offers the advantageous property of having a lower dielectric constant value of less than 3.5 as opposed to the a-SiC material which has a dielectric constant of approximately 4.5. The CDO material besides, having a lower dielectric constant also has a superior adhesion characteristics to the underlying ELK material. However, experiments have indicated that despite its higher dielectric constant, the a-SiC-type material (e.g. BLOk™) may be used to generate capped ELK films with similar or even reduced dielectric constants relative to lower k capped films, and may provide composite (i.e. ELK+cap) structures exhibiting superior k stability.

摘要翻译： 本发明的具体实施方案提供碳化硅型或硅碳氧化物（也通常称为碳掺杂氧化物[CDO]或有机硅酸盐玻璃）封盖材料以及用于在用作介电材料的ELK膜上沉积该封盖材料的方法 在集成电路中。 ELK膜可以包括任何ELK膜，包括但不限于无机，有机和混合电介质材料及其各自的多孔形式。 碳化硅型材料可以是非晶碳化硅型材料，例如可商购的BLOK TM材料，或者掺入碳的氧化物材料，例如可商购的Black Diamond TM，它们均由Applied 使用等离子体工艺在非氧化环境中沉积非晶碳化硅（a-SiC）材料，并使用缺氧等离子体工艺沉积CDO型材料。 非氧化或缺氧等离子体工艺不会显着降低底层薄膜的化学和电学性能。 与介电常数约为4.5的a-SiC材料相比，CDO材料提供具有小于3.5的较低介电常数值的有利特性。 除了具有较低介电常数之外，CDO材料还具有优于下面的ELK材料的粘附特性。 然而，实验已经表明，尽管其较高的介电常数，但是可以使用a-SiC型材料（例如BLOk TM）来产生相对于较低k的覆盖膜具有相似或甚至更低的介电常数的封闭的ELK膜，并且可以 提供表现出优异k稳定性的复合材料（即ELK +帽）结构。

公开(公告)号：US09577134B2

公开(公告)日：2017-02-21

申请号：US14100540

申请日：2013-12-09

申请人： Timothy Weidman

发明人： Timothy Weidman

IPC分类号： H01L31/068 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/022433 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/028 ,  H01L31/035272 ,  H01L31/03682 ,  H01L31/04 ,  H01L31/068 ,  H01L31/182 ,  H01L31/1876 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cell emitter regions using self-aligned implant and cap, and the resulting solar cells, are described. In an example, a method of fabricating an emitter region of a solar cell involves forming a silicon layer above a substrate. The method also involves implanting, through a stencil mask, dopant impurity atoms in the silicon layer to form implanted regions of the silicon layer with adjacent non-implanted regions. The method also involves forming, through the stencil mask, a capping layer on and substantially in alignment with the implanted regions of the silicon layer. The method also involves removing the non-implanted regions of the silicon layer, wherein the capping layer protects the implanted regions of the silicon layer during the removing. The method also involves annealing the implanted regions of the silicon layer to form doped polycrystalline silicon emitter regions.

摘要翻译： 描述了使用自对准植入物和盖子制造太阳能电池发射极区域的方法，以及所得到的太阳能电池。 在一个实例中，制造太阳能电池的发射极区域的方法包括在衬底上形成硅层。 该方法还涉及通过模板掩模注入硅层中的掺杂剂杂质原子以形成具有相邻非注入区域的硅层的注入区域。 该方法还涉及通过模板掩模形成在硅层的注入区域上并基本上与硅层的注入区域基本上对准的覆盖层。 该方法还涉及去除硅层的非注入区域，其中封盖层在去除期间保护硅层的注入区域。 该方法还包括退火硅层的注入区域以形成掺杂的多晶硅发射极区域。