Abstract:
There is provided a wordline enable circuit and its method for reducing power consumption by controlling a wordline select signal in a self-refresh mode. The wordline enable circuit includes a wordline control signal generating unit for outputting an untoggled wordline control signal while a unit wordline block is enabled in a self-refresh mode; a wordline enable signal generating unit for generating a wordline enable control signal, controlled by the untoggled wordline control signal and a toggled address signal, and a first to an n-th wordline enable power supply signals; and a wordline block enable unit for enabling each wordline, controlled by the wordline enable control signal and the first to the n-th wordline enable power supply signals.
Abstract:
An electroluminescent device and a method for manufacturing the same are provided to achieve a highly luminous electroluminescent device that can be used as a backlight for an LCD monitor. The electroluminescent device includes a substrate, a lower electrode layer having a surface of a plurality of convex shapes formed on the substrate, an insulating layer, a light-emitting layer, and an upper electrode layer sequentially formed on the lower electrode layer, and a passivation layer formed on the upper electrode layer. The method for manufacturing an electroluminescent device includes forming a lower electrode layer having a surface of a plurality of convex shapes on a substrate, sequentially forming an insulating layer, a light-emitting layer, and an upper electrode layer over the lower electrode layer to have substantially corresponding surface shapes as the lower electrode layer, and forming a passivation layer on the upper electrode layer.
Abstract:
Disclosed herein are slurry compositions for use in CMP(chemical mechanical polishing) process of metal wiring in manufacturing semiconductor devices, comprising a peroxide, an inorganic acid, a propylenediaminetetraacetate(PDTA)-metal complex, a carboxylic acid, a metal oxide powder, and de-ionized water, wherein the PDTA-metal complex plays a major role in improving overall polishing performance and reproducibility thereof by preventing abraded tungsten oxide from readhesion onto the polished surface, as well as in improving the dispersion stability of the slurry composition.
Abstract:
A planarized surface may be formed by initially forming an aperture through an insulating layer. The insulating layer and its aperture may be conformally coated with a conductive material that ultimately acts as a planarization stop. The conductive material may then be covered with another insulator that fills the remainder of the aperture. Thereafter, the structure may be planarized down to the conductive layer that acts as a planarization stop.
Abstract:
A semiconductor memory device with a bit line sense enable signal generating circuit is disclosed. The semiconductor memory device includes a word line selection signal generating circuit for generating a word line selection signal for selecting a word line; a delay circuit for generating a delayed signal by delaying a signal to the same extent of time period which is needed for the word line selection signal generating circuit to generate the word line selection signal; and a Schmitt trigger for generating a word line enable detecting signal by receiving an output signal from the delay circuit and that is connected to a power supply voltage which has the same voltage level as the voltage level used to enable the word line. The bit line sense enable signal generating circuit in the present invention occupies a relatively smaller layout area than that of conventional semiconductor memory devices. Furthermore, the generating circuit generates a bit line sense enable signal with constant delay time that is immune from process changes, voltage fluctuations, and temperature fluctuations.
Abstract:
The invention relates to a damascene chalcogenide memory cell structure. The damascene chalcogenide memory cell structure is fabricated under conditions that simplify previous process flows. The damascene chalcogenide memory cell structure also prevents volatilization of the chalcogenide memory material.
Abstract:
A chemical mechanical polishing slurry includes an additive of a quaternary ammonium compound having a form of {N—(R1R2R3R4)}+X−, in which R1, R2, R3, and R4 are radicals, and X− is an anion derivative including halogen elements. Preferably, the quaternary ammonium compound is one of [(CH3)3NCH2CH2OH]Cl, [(CH3)3NCH2CH2OH]l, [(CH3)3NCH2CH2OH]Br, [(CH3)3NCH2CH2OH]CO3, and mixtures thereof. The slurry may further include a pH control agent formed of a base such as KOH, NH4OH, and (CH3)4NOH, and an acid such as HCl, H2SO4, H3PO4, and HNO3. Also, the pH control agent can include [(CH3)3NCH2CH2OH]OH. The slurry may further include a surfactant such as cetyldimethyl ammonium bromide, cetyldimethyl ammonium bromide, polyethylene oxide, polyethylene alcohol or polyethylene glycol.
Abstract:
A system and a method are disclosed for preventing scale defects during hot rolling by hot rolling equipment having a scale breaker provided at an entry side of a finishing mill line composed of a plurality of rolling mills arranged in tandem. A descaler is provided between a first stage rolling mill and a second stage rolling mill of the finishing mill line. A cooler for cooling a hot rolled steel plate is provided between the second stage rolling mill and a third stage rolling mill of the finishing mill line. A control device is provided for controlling the descaler and the cooler to be selectively driven such that neither of the descaler and the cooler is actuated, one of the descaler and the cooler is actuated, or both of the descaler and the cooler are actuated, according to rolling conditions. Thus, the hot rolled steel plate is rolled, with its oxide film thickness at an entry side of the third stage rolling mill being restricted to not more than a limiting oxide film thickness of 5 &mgr;m. Consequently, scale defects are prevented, and overcooling of the hot rolled steel plate is suppressed, to improve the quality of a product.
Abstract:
Disclosed is a toner for developing an electrostatic latent image comprising a binding resin and a colorant, wherein the toner contains from 0.1% to 40% by weight of wax, the amount of wax disposed on the surface of the toner is from 1% to 10% by weight, and the number-average dispersion diameter of the wax is from 0.1 to 2 .mu.m. The toner is produced by a process comprising a step of dissolving or dispersing each of the raw materials of the resin, colorant, and wax into an organic solvent to form an oil-phase component, and a step of granulating the oil-phase component in an aqueous solvent, or a step of granulating the oil-phase component in an aqueous solvent and a step of suspension-polymerizing the particles formed in the granulation step. It is desirable that the wax be finely dispersed beforehand and that the wax be flake-shaped. The toner for developing an electrostatic latent image has the advantages that it is not necessary to supply oil to a fixing system and that the oilless fixing capability, the powder characteristics of the toner using wax, the filming characteristics, and the high transfer capability required for forming a color image can be satisfied compatibly.
Abstract:
Provided are semiconductor packages and methods of fabricating the same. The method may include, stacking a lower semiconductor chip on a lower package substrate, forming a lower molding layer on the lower package substrate, forming a connecting through-hole and an element through-hole by performing a laser drilling process on the lower molding layer, and stacking an upper package substrate having a bottom surface to which a passive element is bonded on the lower package substrate to insert the passive element into the element through-hole.