公开(公告)号：US12159788B2

公开(公告)日：2024-12-03

申请号：US17546186

申请日：2021-12-09

Applicant: ASM IP Holding B.V.

Inventor： Maart van Druenen ,  Charles Dezelah ,  Qi Xie ,  Petro Deminskyi ,  Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Lifu Chen

IPC: H01L21/28 ,  C23C16/32 ,  H01L29/40 ,  H01L29/49

Abstract: Methods and systems for depositing rare earth metal carbide containing layers on a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process such as an atomic layer deposition process for depositing a rare earth metal carbide containing layer onto a surface of the substrate.

公开(公告)号：US20240234483A9

公开(公告)日：2024-07-11

申请号：US18491779

申请日：2023-10-22

Applicant: ASM IP Holding B.V.

Inventor： Alessandra Leonhardt ,  Michael Eugene Givens ,  Giuseppe Alessio Verni ,  Qi Xie

IPC: H10B12/10

CPC classification number: H01L28/75

Abstract: Methods of processing a substrate and related structures and systems. Described methods comprise forming a distal dipole layer on to a distal material layer; forming a high-k dielectric on the distal dipole layer; and, forming a proximal dipole layer on the high-k dielectric.

公开(公告)号：US20240153817A1

公开(公告)日：2024-05-09

申请号：US18416147

申请日：2024-01-18

Applicant: ASM IP Holding B.V.

Inventor： Bhushan Zope ,  Kiran Shrestha ,  Shankar Swaminathan ,  Chiyu Zhu ,  Henri Jussila ,  Qi Xie

IPC: H01L21/768 ,  C23C16/02 ,  C23C16/04 ,  C23C16/14 ,  C23C16/455 ,  H01L21/285 ,  H01L23/532

CPC classification number: H01L21/76876 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28568 ,  H01L21/76877 ,  H01L23/53266

Abstract: Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; depositing a nucleation film directly on the dielectric surface; and depositing a molybdenum metal film directly on the nucleation film, wherein depositing the molybdenum metal film includes: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed over a surface of a dielectric material with an intermediate nucleation film are also disclosed.

公开(公告)号：US20240096711A1

公开(公告)日：2024-03-21

申请号：US18522867

申请日：2023-11-29

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Chiyu Zhu ,  Kiran Shrestha ,  Pauline Calka ,  Oreste Madia ,  Jan Willem Maes ,  Michael Eugene Givens

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L21/823842 ,  H01L27/092 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

Abstract: A method for forming a semiconductor device structure is disclosure. The method may include, depositing an NMOS gate dielectric and a PMOS gate dielectric over a semiconductor substrate, depositing a first work function metal over the NMOS gate dielectric and over the PMOS gate dielectric, removing the first work function metal over the PMOS gate dielectric, and depositing a second work function metal over the NMOS gate dielectric and over the PMOS gate dielectric. Semiconductor device structures including desired metal gate electrodes deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US11908736B2

公开(公告)日：2024-02-20

申请号：US17700635

申请日：2022-03-22

Applicant: ASM IP Holding B.V.

Inventor： Bhushan Zope ,  Kiran Shrestha ,  Shankar Swaminathan ,  Chiyu Zhu ,  Henri Jussila ,  Qi Xie

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/14 ,  C23C16/02 ,  H01L23/532 ,  C23C16/04 ,  C23C16/455

CPC classification number: H01L21/76876 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28568 ,  H01L21/76877 ,  H01L23/53266

Abstract: Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; depositing a nucleation film directly on the dielectric surface; and depositing a molybdenum metal film directly on the nucleation film, wherein depositing the molybdenum metal film includes: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed over a surface of a dielectric material with an intermediate nucleation film are also disclosed.

公开(公告)号：US11885013B2

公开(公告)日：2024-01-30

申请号：US17113242

申请日：2020-12-07

Applicant: ASM IP Holding B.V.

Inventor： Giuseppe Alessio Verni ,  Qi Xie ,  Henri Jussila ,  Charles Dezelah ,  Jiyeon Kim ,  Eric James Shero ,  Paul Ma

IPC: C23C16/34 ,  C23C16/455 ,  H01L29/43 ,  C23C16/52

CPC classification number: C23C16/34 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/52 ,  H01L29/43

Abstract: Methods and systems for depositing vanadium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium nitride layer onto a surface of the substrate. The cyclical deposition process can include providing a vanadium halide precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process.

公开(公告)号：US20240030296A1

公开(公告)日：2024-01-25

申请号：US18376014

申请日：2023-10-03

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Peng-Fu Hsu ,  Michael Eugene Givens ,  Qi Xie

IPC: H01L29/40 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  C23C16/40 ,  H01L29/51 ,  H01L29/78 ,  H01L29/161

CPC classification number: H01L29/408 ,  H01L21/02145 ,  H01L21/0228 ,  H01L21/022 ,  H01L21/28158 ,  H01L29/66477 ,  C23C16/403 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78 ,  H01L21/02205 ,  C23C16/401 ,  H01L29/161

Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

公开(公告)号：US20240006176A1

公开(公告)日：2024-01-04

申请号：US18214656

申请日：2023-06-27

Applicant: ASM IP Holding B.V.

Inventor： Lucas Petersen Barbosa Lima ,  Charles Dezelah ,  Rami Khazaka ,  Qi Xie ,  Giuseppe Alessio Verni

IPC: H01L21/02 ,  C30B29/52 ,  C30B25/02

CPC classification number: H01L21/0262 ,  H01L21/02532 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02579

Abstract: Methods and systems for forming a p-type doped silicon germanium layer. The p-type doped silicon germanium layer can include silicon, germanium, gallium, and, in at least some cases, indium.

公开(公告)号：US20230015690A1

公开(公告)日：2023-01-19

申请号：US17812488

申请日：2022-07-14

Applicant: ASM IP Holding, B.V.

Inventor： Maart van Druenen ,  Qi Xie ,  Charles Dezelah ,  Petro Deminskyi ,  Lifu Chen ,  Giuseppe Alessio Verni ,  Ren-Jie Chang

IPC: C23C16/14 ,  C23C16/18 ,  C23C16/44

Abstract: Disclosed are methods and systems for depositing layers comprising a transition metal and a group 13 element. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

公开(公告)号：US20230005744A1

公开(公告)日：2023-01-05

申请号：US17850370

申请日：2022-06-27

Applicant: ASM IP Holding B.V.

Inventor： Caleb Miskin ,  Omar Elleuch ,  Peter Westrom ,  Rami Khazaka ,  Qi Xie ,  Alexandros Demos

IPC: H01L21/02 ,  C23C16/455

Abstract: A method of forming a structure includes supporting a substrate within a reaction chamber of a semiconductor processing system, the substrate having a recess with a bottom surface and a sidewall surface extending upwards from the bottom surface of the recess. A film is deposited within the recess and onto the bottom surface and the sidewall surface of the recess, the film having a bottom segment overlaying the bottom surface of the recess and a sidewall segment deposited onto the sidewall surface of the recess. The sidewall segment of the film is removed while at least a portion bottom segment of the film is retained within the recess, the sidewall segment of the film removed from the sidewall surface more rapidly than removing the bottom segment of the film from the bottom surface of the recess. Semiconductor processing systems and structures formed using the method are also described.