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    Light emitting diode
    61.
    发明授权
    Light emitting diode 有权
    发光二极管

    公开(公告)号：US08896011B2

    公开(公告)日：2014-11-25

    申请号：US12050873

    申请日：2008-03-18

    申请人： Yeo Jin Yoon ,  Jong Kyu Kim ,  Jun Hee Lee

    发明人： Yeo Jin Yoon ,  Jong Kyu Kim ,  Jun Hee Lee

    IPC分类号： H01L33/00 ,  H01L27/15 ,  H01L33/38 ,  H01L33/62

    CPC分类号： H01L27/15 ,  H01L27/156 ,  H01L33/385 ,  H01L33/387 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： AC LED according to the present invention comprises a substrate, and at least one serial array having a plurality of light emitting cells connected in series on the substrate. Each of the light emitting cells comprises a lower semiconductor layer consisting of a first conductive compound semiconductor layer formed on top of the substrate, an upper semiconductor layer consisting of a second conductive compound semiconductor layer formed on top of the lower semiconductor layer, an active layer interposed between the lower and upper semiconductor layers, a lower electrode formed on the lower semiconductor layer exposed at a first corner of the substrate, an upper electrode layer formed on the upper semiconductor layer, and an upper electrode pad formed on the upper electrode layer exposed at a second corner of the substrate. The upper electrode pad and the lower electrode are respectively disposed at the corners diagonally opposite to each other, and the respective light emitting cells are arranged so that the upper electrode pad and the lower electrode of one of the light emitting cells are symmetric with respect to those of adjacent another of the light emitting cells.

    摘要翻译： 根据本发明的AC LED包括衬底和至少一个具有串联连接在衬底上的多个发光单元的串联阵列。 每个发光单元包括由形成在基板顶部上的第一导电化合物半导体层构成的下半导体层，由形成于下半导体层顶部的第二导电化合物半导体层构成的上半导体层，活性层 介于下半导体层和上半导体层之间的下电极，形成在衬底的第一角上露出的下半导体层上的下电极，形成在上半导体层上的上电极层和形成在上电极层上的上电极焊盘 在基片的第二个角落。 上电极焊盘和下电极分别设置在彼此对角相对的角上，并且各发光单元被布置成使得一个发光单元的上电极焊盘和下电极相对于 相邻另一个发光单元的那些。

    Ac light emitting device having photonic crystal structure and method of fabricating the same
    63.
    发明授权
    Ac light emitting device having photonic crystal structure and method of fabricating the same 有权
    具有光子晶体结构的Ac发光器件及其制造方法

    公开(公告)号：US08716727B2

    公开(公告)日：2014-05-06

    申请号：US12065063

    申请日：2006-09-06

    申请人： Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Jong Kyu Kim ,  Jun Hee Lee

    发明人： Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Jong Kyu Kim ,  Jun Hee Lee

    IPC分类号： H01L33/00

    CPC分类号： H01L25/0753 ,  H01L33/007 ,  H01L33/20 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265

    摘要： Disclosed is an AC light emitting device having photonic crystal structures and a method of fabricating the same. The light emitting device includes a plurality of light emitting cells and metallic wirings electrically connecting the light emitting cells with one another. Further, each of the light emitting cells includes a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. In addition, a photonic crystal structure is formed in the second conductive type semiconductor layer. The photonic crystal structure prevents light emitted from the active layer from laterally propagating by means of a periodic array, such that light extraction efficiency of the light emitting device can be improved. Furthermore, the metallic wirings electrically connect a plurality of light emitting cells with one another such that an AC light emitting device can be provided.

    摘要翻译： 公开了具有光子晶体结构的AC发光器件及其制造方法。 发光器件包括多个发光单元和将发光单元彼此电连接的金属布线。 此外，每个发光单元包括第一导电类型半导体层，设置在第一导电类型半导体层的一个区域上的第二导电类型半导体层以及置于第一和第二导电类型半导体层之间的有源层。 此外，在第二导电型半导体层中形成光子晶体结构。 光子晶体结构防止从有源层发射的光通过周期性阵列横向传播，使得可以提高发光器件的光提取效率。 此外，金属配线将多个发光单元彼此电连接，从而可以提供交流发光装置。

    Light emitting diode having electrode extensions for current spreading
    64.
    发明授权
    Light emitting diode having electrode extensions for current spreading 有权
    具有用于电流扩展的电极延伸的发光二极管

    公开(公告)号：US08680559B2

    公开(公告)日：2014-03-25

    申请号：US12941536

    申请日：2010-11-08

    申请人： Kyoung Wan Kim ,  Soo Young Moon ,  Kyu Ho Lee ,  Yeo Jin Yoon ,  Jeong Hee Yang ,  Won Cheol Seo

    发明人： Kyoung Wan Kim ,  Soo Young Moon ,  Kyu Ho Lee ,  Yeo Jin Yoon ,  Jeong Hee Yang ,  Won Cheol Seo

    IPC分类号： H01L33/00

    CPC分类号： H01L33/38 ,  H01L33/20

    摘要： An exemplary embodiment of the present invention discloses a light emitting diode including a substrate having a first edge and a second edge opposite to each other, a light emitting structure disposed on the substrate, the light emitting structure including a first semiconductor layer and a second semiconductor layer, a plurality of first electrode pads arranged on an upper surface of the first semiconductor layer, the first electrode pads arranged in a vicinity of the first edge, a plurality of second electrode pads arranged on the second semiconductor layer, the second electrode pads arranged in a vicinity of the second edge, a plurality of first extensions, each first extension extending from a first electrode pad, and a plurality of second extensions, each second extension extending from a second electrode pad. The first extensions include intrusion parts extending in a direction from the first edge to the second edge, wherein the intrusion parts are spaced apart from each other and not connecting with the second electrode pads. Further, the second extensions include intrusion parts extending in a direction from the second edge to the first edge, wherein the first extension intrusion parts each extend into a region between two of the second extension intrusion parts.

    摘要翻译： 本发明的一个示例性实施例公开了一种发光二极管，其包括具有彼此相对的第一边缘和第二边缘的基板，设置在基板上的发光结构，所述发光结构包括第一半导体层和第二半导体 布置在第一半导体层的上表面上的多个第一电极焊盘，布置在第一边缘附近的第一电极焊盘，布置在第二半导体层上的多个第二电极焊盘，布置在第二半导体层上的第二电极焊盘 在第二边缘附近，多个第一延伸部，每个第一延伸部从第一电极焊盘延伸，以及多个第二延伸部，每个第二延伸部从第二电极焊盘延伸。 第一延伸部包括在从第一边缘到第二边缘的方向上延伸的侵入部分，其中入侵部分彼此间隔开并且不与第二电极焊盘连接。 此外，第二延伸部包括在从第二边缘到第一边缘的方向上延伸的侵入部分，其中第一延伸入侵部分各自延伸到两个第二延伸入侵部分之间的区域中。

    LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD
    65.
    发明申请
    LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD 有权
    具有电极板的发光二极管芯片

    公开(公告)号：US20130234192A1

    公开(公告)日：2013-09-12

    申请号：US13885777

    申请日：2011-02-28

    申请人： Ye Seul Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong ,  Sang Won Woo

    发明人： Ye Seul Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong ,  Sang Won Woo

    IPC分类号： H01L33/46

    CPC分类号： H01L33/387 ,  H01L33/0008 ,  H01L33/10 ,  H01L33/20 ,  H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L2933/0016 ,  H01L2933/0066

    摘要： Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

    摘要翻译： 本文公开了包括电极焊盘的LED芯片。 LED芯片包括：第一导电型半导体层，第一导电型半导体层上的第二导电型半导体层和介于第一导电型半导体层和第二导电型半导体层之间的有源层的半导体堆叠; 位于与第一导电类型半导体层相对的第二导电类型半导体层上的第一电极焊盘; 从所述第一电极焊盘延伸并连接到所述第一导电型半导体层的第一电极延伸部; 电连接到第二导电类型半导体层的第二电极焊盘; 以及插入在第一电极焊盘和第二导电型半导体层之间的绝缘层。 LED芯片包括在第二导电类型半导体层上的第一电极焊盘，由此增加发光面积。

    LIGHT EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY
    67.
    发明申请
    LIGHT EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY 有权
    具有改进的光提取效率的发光二极管

    公开(公告)号：US20130134867A1

    公开(公告)日：2013-05-30

    申请号：US13816572

    申请日：2011-02-19

    申请人： Jeong Hee Yang ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Jae Moo Kim ,  Keum Ju Lee

    发明人： Jeong Hee Yang ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Jae Moo Kim ,  Keum Ju Lee

    IPC分类号： H05B33/06

    CPC分类号： H01L33/08 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/24 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46 ,  H05B33/06

    摘要： Disclosed is a light emitting diode (LED) having improved light extraction efficiency. The LED includes a light emitting structure which is positioned on a substrate and has a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer. A first electrode pad is electrically connected to the first conductive type semiconductor layer. A second electrode pad is positioned on the substrate. An insulating reflective layer covers a portion of the light emitting structure, and is positioned under the second electrode pad, so that the second electrode pad is spaced apart from the light emitting structure. At least one upper extension is connected to the second electrode pad to be electrically connected to the second conductive type semiconductor layer. Further, a pattern of light extraction elements is positioned on the second conductive type semiconductor layer.

    摘要翻译： 公开了具有改进的光提取效率的发光二极管（LED）。 LED包括位于基板上并具有第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 第一电极焊盘电连接到第一导电类型半导体层。 第二电极焊盘位于衬底上。 绝缘反射层覆盖发光结构的一部分，并且位于第二电极焊盘下方，使得第二电极焊盘与发光结构间隔开。 至少一个上延伸部连接到第二电极焊盘以与第二导电型半导体层电连接。 此外，光提取元件的图案位于第二导电类型半导体层上。

    Light emitting device with light emitting cells arrayed
    69.
    发明授权
    Light emitting device with light emitting cells arrayed 有权
    具有排列发光单元的发光装置

    公开(公告)号：US08054002B2

    公开(公告)日：2011-11-08

    申请号：US12088906

    申请日：2006-12-05

    申请人： Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Lacroix Yves

    发明人： Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Lacroix Yves

    IPC分类号： H05B37/22

    CPC分类号： H05B33/0821 ,  H01L24/37 ,  H01L24/40 ,  H01L27/156 ,  H01L33/62 ,  H01L2224/371 ,  H01L2224/40137 ,  H01L2924/00014 ,  H01L2924/12041 ,  H05B33/0803 ,  H05B33/0809 ,  Y02B20/348 ,  H01L2924/00 ,  H01L2224/37099 ,  H01L2224/84

    摘要： The present invention relates to a light emitting device. The light emitting device according to the present invention comprises a light emitting cell block having a plurality of light emitting cells; and a bridge rectifying circuit connected to input and output terminals of the light emitting cell block, wherein the bridge rectifying circuit includes a plurality of diodes between nodes. In manufacturing an AC light emitting device with a bridge rectifying circuit built therein, the present invention can provide a light emitting device capable of enhancing the reliability and luminance of the light emitting device by setting the size of diodes of the bridge rectifying circuit to be a certain size and controlling the number thereof.

    摘要翻译： 本发明涉及一种发光装置。 根据本发明的发光器件包括具有多个发光单元的发光单元块; 以及连接到所述发光单元块的输入和输出端子的桥式整流电路，其中所述桥式整流电路在节点之间包括多个二极管。 在制造其中内置有桥式整流电路的交流发光装置的情况下，本发明可以提供一种通过将桥式整流电路的二极管的尺寸设定为一个可以提高发光装置的可靠性和亮度的发光装置 一定的尺寸并控制其数量。