公开(公告)号：US20170062647A1

公开(公告)日：2017-03-02

申请号：US15227081

申请日：2016-08-03

Applicant: GLOBALFOUNDRIES INC.

Inventor： John J. Ellis-Monaghan ,  John C. S. Hall ,  Marwan H. Khater ,  Edward W. Kiewra ,  Steven M. Shank

IPC: H01L31/18 ,  H01L31/0203 ,  H01L31/028 ,  H01L31/0216 ,  H01L27/144 ,  H01L31/105

CPC classification number: H01L31/1808 ,  H01L27/1443 ,  H01L27/1446 ,  H01L27/14629 ,  H01L31/0203 ,  H01L31/02161 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/103 ,  H01L31/105 ,  H01L31/1872

Abstract: Disclosed are a method of forming a photodetector and a photodetector structure. In the method, a polycrystalline or amorphous light-absorbing layer is formed on a dielectric layer such that it is in contact with a monocrystalline semiconductor core of an optical waveguide. The light-absorbing layer is then encapsulated in one or more strain-relief layers and a rapid melting growth (RMG) process is performed to crystallize the light-absorbing layer. The strain-relief layer(s) are tuned for controlled strain relief so that, during the RMG process, the light-absorbing layer remains crack-free. The strain-relief layer(s) are then removed and an encapsulation layer is formed over the light-absorbing layer (e.g., filling in surface pits that developed during the RMG process). Subsequently, dopants are implanted through the encapsulation layer to form diffusion regions for PIN diode(s). Since the encapsulation layer is relatively thin, desired dopant profiles can be achieved within the diffusion regions.

Abstract translation: 公开了一种形成光电检测器和光电检测器结构的方法。 在该方法中，在电介质层上形成多晶或非晶光吸收层，使其与光波导的单晶半导体芯接触。 然后将光吸收层封装在一个或多个应变消除层中，并进行快速熔融生长（RMG）工艺以使光吸收层结晶。 调节应变消除层以控制应变消除，使得在RMG过程期间，光吸收层保持无裂纹。 然后去除应变消除层，并且在光吸收层上形成封装层（例如，填充在RMG工艺期间产生的表面凹坑中）。 随后，通过封装层注入掺杂剂以形成用于PIN二极管的扩散区域。 由于封装层相对较薄，所以可以在扩散区域内实现所需的掺杂分布。

公开(公告)号：US20170054049A1

公开(公告)日：2017-02-23

申请号：US14830870

申请日：2015-08-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Steven M. Shank ,  John J. Ellis-Monaghan ,  Marwan H. Khater ,  Jason S. Orcutt

IPC: H01L31/109 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/028

CPC classification number: H01L31/1812 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/035272 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/1037 ,  H01L31/109 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/50

Abstract: Various particular embodiments include a method for forming a photodetector, including: forming a structure including a barrier layer disposed between a layer of doped silicon (Si) and a layer of germanium (Ge), the barrier layer including a crystallization window; and annealing the structure to convert, via the crystallization window, the Ge to a first composition of silicon germanium (SiGe) and the doped Si to a second composition of SiGe.

Abstract translation: 各种具体实施方案包括形成光电检测器的方法，包括：形成包括设置在掺杂硅（Si）层和锗层（Ge）之间的阻挡层的结构，所述阻挡层包括结晶窗口; 并且退火该结构以通过晶化窗口将Ge转化为硅锗（SiGe）的第一组成和掺杂Si至SiGe的第二组成。

公开(公告)号：US20160343759A1

公开(公告)日：2016-11-24

申请号：US15215674

申请日：2016-07-21

Applicant: GLOBALFOUNDRIES INC.

Inventor： John J. Ellis-Monaghan ,  Qizhi Liu ,  Steven M. Shank

IPC: H01L27/146

CPC classification number: H01L27/14632 ,  G02B6/4202 ,  H01L21/76224 ,  H01L21/76283 ,  H01L27/1462 ,  H01L27/1463 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/101

Abstract: Disclosed are structures and methods of forming the structures so as to have a photodetector isolated from a substrate by stacked trench isolation regions. In one structure, a first trench isolation region is in and at the top surface of a substrate and a second trench isolation region is in the substrate below the first. A photodetector is on the substrate aligned above the first and second trench isolation regions. In another structure, a semiconductor layer is on an insulator layer and laterally surrounded by a first trench isolation region. A second trench isolation region is in and at the top surface of a substrate below the insulator layer and first trench isolation region. A photodetector is on the semiconductor layer and extends laterally onto the first trench isolation region. The stacked trench isolation regions provide sufficient isolation below the photodetector to allow for direct coupling with an off-chip optical fiber.

公开(公告)号：US09435948B2

公开(公告)日：2016-09-06

申请号：US14304318

申请日：2014-06-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Robert K. Leidy ,  Mark D. Levy ,  Qizhi Liu ,  Gary L. Milo ,  Steven M. Shank

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/125 ,  G02B6/136

CPC classification number: G02B6/122 ,  G02B6/125 ,  G02B6/136 ,  G02B2006/12061

Abstract: Various embodiments include a silicon-based optical waveguide structure locally on a bulk silicon substrate, and systems and program products for forming such a structure by modifying an integrated circuit (IC) design structure. Embodiments include implementing processes of preparing manufacturing data for formation of the IC design structure in a computer-implemented IC formation system, wherein the preparing of the manufacturing data includes inserting instructions into the manufacturing data to convert an edge of the at least one shape from a crystallographic direction to a crystallographic direction.

Abstract translation: 各种实施例包括局部在体硅衬底上的硅基光波导结构，以及用于通过修改集成电路（IC）设计结构来形成这种结构的系统和程序产品。 实施例包括实现在计算机实现的IC形成系统中准备用于形成IC设计结构的制造数据的过程，其中制造数据的准备包括将指令插入到制造数据中以将至少一种形状的边缘从 <110>结晶方向到<100>晶体方向。