Abstract:
A memory device including a single transistor having functions of RAM and ROM and methods for operating and manufacturing the same are provided. The memory device includes a single transistor formed on a substrate. The transistor may be a memory transistor having a gate with a nonvolatile memory element, or the nonvolatile memory element is provided between the transistor and the substrate.
Abstract:
An electron beam lithography apparatus, which uses a patterned emitter, includes a pyroelectric plate emitter that emits electrons using a patterned metal thin layer formed on the pyroelectric plate as a mask. When the emitter is heated, electrons are emitted from portions of the emitter covered with a patterned dielectric layer, and not from portions of the emitter covered with a patterned metal thin layer, and a pattern of the emitter is thereby projected onto a substrate. To prevent dispersion of emitted electron beams, the electron beams may be controlled by a permanent magnet, an electro-magnet, or a deflector unit. A one-to-one or x-to-one projection of a desired pattern on the substrate is thereby obtained.
Abstract:
An electron projection lithography apparatus using secondary electrons includes a secondary electron emitter which is spaced apart from a substrate holder by a first predetermined interval and has a patterned mask formed on a surface thereof to face the substrate holder, a primary electron emitter which is spaced apart by a second predetermined interval from the secondary electron emitter in a direction opposite to the substrate holder and emits primary electrons to the secondary electron emitter, a second power supply which applies a second predetermined voltage between the substrate holder and the secondary electron emitter, a first power supply which applies a first predetermined voltage between the secondary electron emitter and the primary electron emitter, and a magnetic field generator which controls a path of secondary electrons emitted from the secondary electron emitter.
Abstract:
The present invention relates to a matrix type multiple numeration system ferroelectric random access memory using a leakage current of dielectric, which is non-volatile and with which a multiple numeration system is realized, and a method for manufacturing the same. In the memory according to the present invention, the unit cells formed of the dielectric and ferroelectric capacitors are arranged in a matrix, the lower electrodes are connected to bit lines, and the upper electrodes are connected to word lines. Thus, a transistor for selecting cells is included for each word line and each bit line. Therefore, it is possible to heighten the integration degree, since the memory cells are each formed of only a dielectric and a ferroelectric capacitor, and to improve productivity since manufacturing processes are simple.
Abstract:
The present invention relates to a matrix type multiple numeration system ferroelectric random access memory using a leakage current of dielectric, which is non-volatile and with which a multiple numeration system is realized, and a method for manufacturing the same. In the memory according to the present invention, the unit cells formed of the dielectric and ferroelectric capacitors are arranged in a matrix, the lower electrodes are connected to bit lines, and the upper electrodes are connected to word lines. Thus, a transistor for selecting cells is included for each word line and each bit line. Therefore, it is possible to heighten the integration degree, since the memory cells are each formed of only a dielectric and a ferroelectric capacitor, and to improve productivity since manufacturing processes are simple.
Abstract:
An acousto-optic device capable of increasing a range of a diffraction angle of output light by using a nanostructured acousto-optic medium, and an optical scanner, an optical modulator, a two-dimensional/three-dimensional (2D/3D) conversion stereoscopic image display apparatus, and a holographic display apparatus using the acousto-optic device. The acousto-optic device may include a nanostructured acousto-optic medium formed by at least two different mediums repeatedly alternating with each other, wherein at least one of the at least two different mediums includes an acousto-optic medium. The acousto-optic device having the aforementioned structure may increase the range of a diffraction angle of output light. Thus, various systems such as the optical scanner, the optical modulator, the 2D/3D conversion stereoscopic image display apparatus, and the holographic display apparatus may not require a separate optical system to increase an operational angle range, thereby decreasing a size of the system and/or improving a resolution of the system.
Abstract:
An apparatus for displaying a three-dimensional (3D) image may include a plurality of display panels and a controller configured to apply image signals to each of the plurality of display panels. At least one of the display panels may include a transparent display panel. The plurality of display panels may be spaced apart from each other in a depth direction. A method of displaying a three-dimensional (3D) image may include displaying plane images on each of a plurality of display panels. At least one of the plurality of display panels may include a transparent display panel. The plurality of display panels may be spaced apart from each other in a depth direction.
Abstract:
A storage device may include a storage unit that stores data transmitted via a plurality of first wires; and a security control unit that controls connection between each of a plurality of second wires connected to an external device and each of the plurality of first wires by programming a plurality of switching devices according to an encryption key.
Abstract:
The semiconductor device includes an insulating substrate, a channel layer over the insulating substrate, a gate at least partially extending from an upper surface of the channel layer into the channel layer, a source and a drain respectively at opposing sides of the gate on the channel layer, a gate insulating layer surrounding, the gate and electrically insulating the gate from the channel layer, the source, and the drain, and a variable resistance material layer between the insulating substrate and the gate.
Abstract:
An optical element and an information storage device including the same. The optical element may include an optical waveguide structure for transforming circularly polarized light into plasmon and transmitting the plasmon. The optical waveguide structure may emit a circularly polarized plasmonic field. The optical element may be used in an information storage device. For example, the information storage device may include a recording medium and a recording element for recording information on the recording medium, and the recording element may include the optical element. The information may be recorded on the recording medium by using the circularly polarized plasmonic field generated by the optical element.