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79 条记录 (耗时 0.027 秒)

    Connector and connector assembly
    62.
    发明授权
    Connector and connector assembly 失效
    连接器和连接器组件

    公开(公告)号：US06354860B1

    公开(公告)日：2002-03-12

    申请号：US09430876

    申请日：1999-11-01

    申请人： Timothy J. Miller ,  Randolph S. Golab ,  Matthew J. Hoff ,  Michael J. Roche

    发明人： Timothy J. Miller ,  Randolph S. Golab ,  Matthew J. Hoff ,  Michael J. Roche

    IPC分类号： H01R13627

    CPC分类号： H01R13/6272 ,  H01R13/641

    摘要： A connector is provided that includes a first housing having a see-saw first latch element attached thereto. The first housing and first latch element are adapted for engagement with a mating second housing that includes a mating second latch element, respectively. A slider is provided that includes a hood, having a window, and a beam the distal end of that is engagable with the first latch element to prevent movement of the slider further towards the first latch element until the distal end is engaged by the second latch element. When the second latch element engages the distal end of the beam, the distal end is pivoted into the window of the hood. The slider may be moved so that the distal end resides into engagement with the second latch element only after the first and second latch elements have been fully engaged. When the distal end has been so positioned, the beam will prevent disengagement of the first and second latch elements.

    摘要翻译： 提供了一种连接器，其包括具有附接到其上的跷跷板第一闩锁元件的第一壳体。 第一壳体和第一闩锁元件适于与配合的第二壳体接合，该配合的第二壳体分别包括配合的第二闩锁元件。 提供了一种滑动件，其包括具有窗口的罩，和其远端可与第一闩锁元件接合的梁，以防止滑块进一步朝向第一闩锁元件移动，直到远端与第二闩锁接合 元件。 当第二闩锁元件接合梁的远端时，远端枢转到罩的窗口中。 滑动器可以被移动，使得仅在第一和第二闩锁元件完全接合之后，远端与第二闩锁元件接合。 当远端如此定位时，梁将防止第一和第二闩锁元件的分离。

    Plasma processing apparatus
    67.
    发明授权
    Plasma processing apparatus 有权
    等离子体处理装置

    公开(公告)号：US08664098B2

    公开(公告)日：2014-03-04

    申请号：US13353993

    申请日：2012-01-19

    申请人： Ludovic Godet ,  Timothy J. Miller ,  Svetlana B. Radovanov ,  Anthony Renau ,  Vikram Singh

    发明人： Ludovic Godet ,  Timothy J. Miller ,  Svetlana B. Radovanov ,  Anthony Renau ,  Vikram Singh

    IPC分类号： H01L21/26 ,  C23F1/00 ,  C23C16/00 ,  H01L21/3065

    CPC分类号： H01J37/32623 ,  C23C14/48

    摘要： A plasma processing apparatus includes a process chamber, a platen for supporting a workpiece, a source configured to generate a plasma in the process chamber, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.

    摘要翻译： 等离子体处理装置包括处理室，用于支撑工件的压板，被配置为在处理室中产生等离子体的源和绝缘改性剂。 绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。 间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。 另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角 到工件。

    ION SOURCE
    69.
    发明申请
    ION SOURCE 有权
    离子源

    公开(公告)号：US20110186749A1

    公开(公告)日：2011-08-04

    申请号：US12848354

    申请日：2010-08-02

    申请人： Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson ,  Vikram Singh

    发明人： Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson ,  Vikram Singh

    IPC分类号： H01J27/08

    CPC分类号： H01J27/08 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/083 ,  H01J2237/0835 ,  Y10S438/961

    摘要： An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator positioned in the arc chamber. The plasma sheath modulator is configured to control a shape of a boundary between a plasma and a plasma sheath proximate the extraction aperture, wherein the plasma sheath modulator includes a semiconductor. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.

    摘要翻译： 离子源包括具有提取孔的电弧室和位于电弧室中的等离子体鞘调制器。 等离子体鞘调制器被配置为控制靠近提取孔的等离子体和等离子体鞘之间的边界的形状，其中等离子体鞘调制器包括半导体。 可以通过离子源产生具有高电流密度的良好聚焦的离子束。 高电流密度离子束可以提高相关过程的吞吐量。 也可以控制离子束的发射。

    PLASMA PROCESSING APPARATUS
    70.
    发明申请
    PLASMA PROCESSING APPARATUS 有权
    等离子体加工设备

    公开(公告)号：US20100255683A1

    公开(公告)日：2010-10-07

    申请号：US12418120

    申请日：2009-04-03

    申请人： Ludovic GODET ,  Timothy J. Miller ,  Christopher J. Leavitt ,  Bernard G. Lindsay

    发明人： Ludovic GODET ,  Timothy J. Miller ,  Christopher J. Leavitt ,  Bernard G. Lindsay

    IPC分类号： H01L21/3065 ,  C23C16/513 ,  H01L21/306 ,  H01L21/302

    CPC分类号： H01J37/32623

    摘要： A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulting modifier is configured to control a shape of a boundary between the plasma and the plasma sheath so a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the workpiece facing the plasma. Controlling the shape of the boundary between the plasma and the plasma sheath enables a large range of incident angles of particles striking the workpiece to be achieved.

    摘要翻译： 等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源，其具有与工件的前表面相邻的等离子体护套和绝缘改性剂。 绝缘改性剂被配置为控制等离子体和等离子体护套之间的边界的形状，使得边界形状的一部分不平行于由面向等离子体的工件的前表面限定的平面。 通过控制等离子体和等离子体护套之间的边界的形状，能够实现粒子撞击工件的大范围入射角。