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公开(公告)号：US20100255683A1
公开(公告)日：2010-10-07
申请号：US12418120
申请日：2009-04-03
IPC分类号： H01L21/3065 , C23C16/513 , H01L21/306 , H01L21/302
CPC分类号： H01J37/32623
摘要： A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulting modifier is configured to control a shape of a boundary between the plasma and the plasma sheath so a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the workpiece facing the plasma. Controlling the shape of the boundary between the plasma and the plasma sheath enables a large range of incident angles of particles striking the workpiece to be achieved.
摘要翻译： 等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源，其具有与工件的前表面相邻的等离子体护套和绝缘改性剂。 绝缘改性剂被配置为控制等离子体和等离子体护套之间的边界的形状，使得边界形状的一部分不平行于由面向等离子体的工件的前表面限定的平面。 通过控制等离子体和等离子体护套之间的边界的形状，能够实现粒子撞击工件的大范围入射角。
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公开(公告)号：US08623171B2
公开(公告)日：2014-01-07
申请号：US12418120
申请日：2009-04-03
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32623
摘要： A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulting modifier is configured to control a shape of a boundary between the plasma and the plasma sheath so a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the workpiece facing the plasma. Controlling the shape of the boundary between the plasma and the plasma sheath enables a large range of incident angles of particles striking the workpiece to be achieved.
摘要翻译： 等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源，其具有与工件的前表面相邻的等离子体护套和绝缘改性剂。 绝缘改性剂被配置为控制等离子体和等离子体护套之间的边界的形状，使得边界形状的一部分不平行于由面向等离子体的工件的前表面限定的平面。 通过控制等离子体和等离子体护套之间的边界的形状，能够实现粒子撞击工件的大范围入射角。
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公开(公告)号：US08907307B2
公开(公告)日：2014-12-09
申请号：US13046239
申请日：2011-03-11
IPC分类号： H01J3/14 , H01J37/302 , H01J37/317 , H01J37/32
CPC分类号： H01J37/3172 , H01J37/3023 , H01J37/32009 , H01J37/32137 , H01J37/32376 , H01J37/32412 , H01J37/32623 , H01J2237/31711
摘要： A method of implanting a workpiece in an ion implantation system. The method may include providing an extraction plate adjacent to a plasma chamber containing a plasma, such that the extraction plate extracts ions from the plasma through at least one aperture that provides an ion beam having ions distributed over a range of an angles of incidence on the workpiece. The method may include scanning the workpiece with respect to the extraction plate and varying a power level of the plasma during the scanning from a first power level to a second power level, wherein at a surface of the workpiece, a first beam width at a first power level is greater than a second beam width at a second power level.
摘要翻译： 在离子注入系统中植入工件的方法。 该方法可以包括提供与含有等离子体的等离子体室相邻的提取板，使得提取板通过至少一个孔提取离子，等离子体提供离子束，离子束具有分布在入射角范围内的离子 工件。 该方法可以包括相对于提取板扫描工件并且在从第一功率水平到第二功率水平的扫描期间改变等离子体的功率水平，其中在工件的表面处具有第一光束宽度 功率水平大于第二功率水平的第二波束宽度。
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公开(公告)号：US20120228515A1
公开(公告)日：2012-09-13
申请号：US13046239
申请日：2011-03-11
IPC分类号： H01J3/14
CPC分类号： H01J37/3172 , H01J37/3023 , H01J37/32009 , H01J37/32137 , H01J37/32376 , H01J37/32412 , H01J37/32623 , H01J2237/31711
摘要： A method of implanting a workpiece in an ion implantation system. The method may include providing an extraction plate adjacent to a plasma chamber containing a plasma, such that the extraction plate extracts ions from the plasma through at least one aperture that provides an ion beam having ions distributed over a range of an angles of incidence on the workpiece. The method may include scanning the workpiece with respect to the extraction plate and varying a power level of the plasma during the scanning from a first power level to a second power level, wherein at a surface of the workpiece, a first beam width at a first power level is greater than a second beam width at a second power level.
摘要翻译： 在离子注入系统中植入工件的方法。 该方法可以包括提供与含有等离子体的等离子体室相邻的提取板，使得提取板通过至少一个孔提取离子，等离子体提供离子束，所述离子束具有分布在入射角范围内的离子 工件。 该方法可以包括相对于提取板扫描工件并且在从第一功率水平到第二功率水平的扫描期间改变等离子体的功率水平，其中在工件的表面处具有第一光束宽度 功率水平大于第二功率水平的第二波束宽度。
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5.发明授权Technique and apparatus for monitoring ion mass, energy, and angle in processing systems 有权用于监控处理系统中离子质量，能量和角度的技术和设备公开(公告)号：US08698107B2
公开(公告)日：2014-04-15
申请号：US12987950
申请日：2011-01-10
IPC分类号： H01J37/30
CPC分类号： H01J49/40 , H01J37/244 , H01J37/3171 , H01J37/32935 , H01J49/04 , H01J2237/24528 , H01J2237/24542
摘要： A time-of-flight (TOF) ion sensor system for monitoring an angular distribution of ion species having an ion energy and incident on a substrate includes a drift tube wherein the ion sensor system is configured to vary an angle of the drift tube with respect to a plane of the substrate. The drift tube may have a first end configured to receive a pulse of ions from the ion species wherein heavier ions and lighter ions of the pulse of ions arrive in packets at a second end of the drift tube. An ion detector may be disposed at the second end of the ion sensor, wherein the ion detector is configured to detect the packets of ions derived from the pulse of ions and corresponding to respective different ion masses.
摘要翻译： 用于监测具有离子能并入射在衬底上的离子种类的角分布的飞行时间（TOF）离子传感器系统包括漂移管，其中离子传感器系统被配置为相对于漂移管的角度改变 到基板的平面。 漂移管可以具有构造成从离子物质接收离子脉冲的第一端，其中离子脉冲的较重离子和较轻离子在漂移管的第二端处分组到达。 离子检测器可以设置在离子传感器的第二端处，其中离子检测器被配置为检测源自离子脉冲的离子的分组并且对应于各个不同的离子质量。
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6.发明授权Method and system for controlling critical dimension and roughness in resist features 有权用于控制抗蚀剂特征的临界尺寸和粗糙度的方法和系统公开(公告)号：US08354655B2
公开(公告)日：2013-01-15
申请号：US13099432
申请日：2011-05-03
IPC分类号： H01J37/32
CPC分类号： G03F7/20 , G03F7/2024 , G03F7/40 , H01J37/3023 , H01J37/3053 , H01J2237/3174 , H01L21/0273
摘要： A method of treating a photoresist relief feature having an initial line roughness and an initial critical dimension. The method may include directing ions toward the photoresist in a first exposure at a first angular range and first dose rate and a that is configured to reduce the initial line roughness to a second line roughness. The method may also include directing ions toward the photoresist relief feature in a second exposure at a second ion dose rate greater than the first dose rate, wherein the second ion dose rate is configured to swell the photoresist relief feature.
摘要翻译： 一种处理具有初始线粗糙度和初始临界尺寸的光致抗蚀剂浮雕特征的方法。 该方法可以包括在第一角度范围和第一剂量率的第一曝光中将离子引向光致抗蚀剂，并且被配置为将初始线粗糙度减小到第二线粗糙度。 该方法还可以包括以大于第一剂量率的第二离子剂量率在第二曝光中将离子引向光致抗蚀剂浮雕特征，其中第二离子剂量率被配置为溶胀光致抗蚀剂浮雕特征。
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7.发明申请METHOD AND SYSTEM FOR CONTROLLING CRITICAL DIMENSION AND ROUGHNESS IN RESIST FEATURES 有权用于控制关键特征的关键尺寸和粗糙度的方法和系统公开(公告)号：US20120280140A1
公开(公告)日：2012-11-08
申请号：US13099432
申请日：2011-05-03
CPC分类号： G03F7/20 , G03F7/2024 , G03F7/40 , H01J37/3023 , H01J37/3053 , H01J2237/3174 , H01L21/0273
摘要： A method of treating a photoresist relief feature having an initial line roughness and an initial critical dimension. The method may include directing ions toward the photoresist in a first exposure at a first angular range and first dose rate and a that is configured to reduce the initial line roughness to a second line roughness. The method may also include directing ions toward the photoresist relief feature in a second exposure at a second ion dose rate greater than the first dose rate, wherein the second ion dose rate is configured to swell the photoresist relief feature.
摘要翻译： 一种处理具有初始线粗糙度和初始临界尺寸的光致抗蚀剂浮雕特征的方法。 该方法可以包括在第一角度范围和第一剂量率的第一曝光中将离子引向光致抗蚀剂，并且被配置为将初始线粗糙度减小到第二线粗糙度。 该方法还可以包括以大于第一剂量率的第二离子剂量率在第二曝光中将离子引向光致抗蚀剂浮雕特征，其中第二离子剂量率被配置为溶胀光刻胶浮雕特征。
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8.发明申请TECHNIQUE AND APPARATUS FOR MONITORING ION MASS, ENERGY, AND ANGLE IN PROCESSING SYSTEMS 有权用于监控处理系统中离子质量，能量和角度的技术和装置公开(公告)号：US20120175518A1
公开(公告)日：2012-07-12
申请号：US12987950
申请日：2011-01-10
IPC分类号： H01J49/00
CPC分类号： H01J49/40 , H01J37/244 , H01J37/3171 , H01J37/32935 , H01J49/04 , H01J2237/24528 , H01J2237/24542
摘要： A time-of-flight (TOF) ion sensor system for monitoring an angular distribution of ion species having an ion energy and incident on a substrate includes a drift tube wherein the ion sensor system is configured to vary an angle of the drift tube with respect to a plane of the substrate. The drift tube may have a first end configured to receive a pulse of ions from the ion species wherein heavier ions and lighter ions of the pulse of ions arrive in packets at a second end of the drift tube. An ion detector may be disposed at the second end of the ion sensor, wherein the ion detector is configured to detect the packets of ions derived from the pulse of ions and corresponding to respective different ion masses.
摘要翻译： 用于监测具有离子能并入射在衬底上的离子种类的角分布的飞行时间（TOF）离子传感器系统包括漂移管，其中离子传感器系统被配置为相对于漂移管的角度改变 到基板的平面。 漂移管可以具有构造成从离子物质接收离子脉冲的第一端，其中离子脉冲的较重离子和较轻离子在漂移管的第二端处分组到达。 离子检测器可以设置在离子传感器的第二端处，其中离子检测器被配置为检测源自离子脉冲的离子的分组并且对应于各个不同的离子质量。
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9.发明申请公开(公告)号：US20130146790A1
公开(公告)日：2013-06-13
申请号：US13313078
申请日：2011-12-07
CPC分类号： H01J37/32146 , G21K1/14 , H01J37/026 , H01J37/3171 , H01J37/32412 , H01J37/32422 , H01J2237/0044
摘要： A processing system may include a plasma source for providing a plasma and a workpiece holder arranged to receive ions from the plasma. The processing system may further include a pulsed bias circuit electrically coupled to the plasma source and operable to switch a bias voltage supplied to the plasma source between a high voltage state in which the plasma source is biased positively with respect to ground and a low voltage state in which the plasma source is biased negatively with respect to the ground.
摘要翻译： 处理系统可以包括用于提供等离子体的等离子体源和布置成接收来自等离子体的离子的工件夹持器。 处理系统还可以包括电耦合到等离子体源的脉冲偏置电路，并且可操作以在提供给等离子体源的高电压状态之间切换偏置电压，其中等离子体源相对于地面被正偏置，而低电压状态 其中等离子体源相对于地面被负偏压。
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10.发明申请METHOD AND APPARATUSES FOR PROVIDING ELECTRICAL CONTACT FOR PLASMA PROCESSING APPLICATIONS 审中-公开用于提供等离子体处理应用的电气接触的方法和装置公开(公告)号：US20080160212A1
公开(公告)日：2008-07-03
申请号：US11616314
申请日：2006-12-27
申请人： Bon-Woong Koo , Steven R. Walther , Christopher J. Leavitt , Justin Tocco , Sung-Hwan Hyun , Timothy J. Miller , Jay T. Scheuer , Atul Gupta , Vikram Singh , Deven Raj
发明人： Bon-Woong Koo , Steven R. Walther , Christopher J. Leavitt , Justin Tocco , Sung-Hwan Hyun , Timothy J. Miller , Jay T. Scheuer , Atul Gupta , Vikram Singh , Deven Raj
CPC分类号： H01J37/32706 , H01J37/32623 , H01L21/67011 , H01L21/67069 , H01L21/68714 , H01L21/68735
摘要： A method and apparatuses for providing improved electrical contact to a semiconductor wafer during plasma processing applications are disclosed. In one embodiment, an apparatus includes a wafer platen for supporting the wafer; and a plurality of electrical contact elements, each of the plurality of electrical contact elements are configured to provide a path for supplying a bias voltage from a bias power supply to the wafer on the wafer platen. The plurality of electrical contact elements are also geometrically arranged such that at least one electrical contact element contacts an inner surface region (e.g., region between a center of wafer and a distance approximately half of the radius of the wafer) and at least one electrical contact element contacts an outer annular surface region (e.g., region between an outer edge of wafer and a distance approximately half of the radius of the wafer).
摘要翻译： 公开了一种用于在等离子体处理应用期间提供与半导体晶片的改进的电接触的方法和装置。 在一个实施例中，一种装置包括用于支撑晶片的晶片台板; 以及多个电接触元件，所述多个电接触元件中的每一个被配置为提供用于将来自偏置电源的偏置电压提供给晶片台板上的晶片的路径。 多个电接触元件也被几何地布置成使得至少一个电接触元件接触内表面区域（例如，晶片的中心与晶片的半径的一半的距离）和至少一个电接触 元件接触外部环形表面区域（例如，晶片的外边缘之间的区域和晶片的半径的一半的距离）。
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