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    FIELD EFFECT TRANSISTORS (FETS) WITH INVERTED SOURCE/DRAIN METALLIC CONTACTS, AND METHOD OF FABRICATING SAME
    61.
    发明申请
    FIELD EFFECT TRANSISTORS (FETS) WITH INVERTED SOURCE/DRAIN METALLIC CONTACTS, AND METHOD OF FABRICATING SAME 有权
    具有反相源/漏电金属接触的场效应晶体管（FET）及其制造方法

    公开(公告)号：US20080042174A1

    公开(公告)日：2008-02-21

    申请号：US11923075

    申请日：2007-10-24

    申请人： Michael Belyansky ,  Dureseti Chidambarrao ,  Lawrence Clevenger ,  Kaushik Kumar ,  Carl Radens

    发明人： Michael Belyansky ,  Dureseti Chidambarrao ,  Lawrence Clevenger ,  Kaushik Kumar ,  Carl Radens

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L21/76804 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention relates to an field effect transistor (FET) comprising an inverted source/drain metallic contact that has a lower portion located in a first, lower dielectric layer and an upper portion located in a second, upper dielectric layer. The lower portion of the inverted source/drain metallic contact has a larger cross-sectional area than the upper portion. Preferably, the lower portion of the inverted source/drain metallic contact has a cross-sectional area ranging from about 0.03 μm2 to about 3.15 μm2, and such an inverted source/drain metallic contact is spaced apart from a gate electrode of the FET by a distance ranging from about 0.001 μm to about 5 μm.

    摘要翻译： 本发明涉及一种场效应晶体管（FET），其包括反向的源极/漏极金属接触，其具有位于第一下部电介质层中的下部和位于第二上部电介质层中的上部。 倒置的源极/漏极金属触点的下部具有比上部更大的横截面面积。 优选地，倒置的源极/漏极金属接触件的下部具有约0.03毫米2至约3.15微米的横截面积，并且这样的反相源 /漏极金属触点与FET的栅电极间隔约0.001μm至约5μm的距离。

    SIDEWALL SEMICONDUCTOR TRANSISTORS
    62.
    发明申请
    SIDEWALL SEMICONDUCTOR TRANSISTORS 有权
    端子半导体晶体管

    公开(公告)号：US20060124993A1

    公开(公告)日：2006-06-15

    申请号：US10905041

    申请日：2004-12-13

    申请人： Huilong Zhu ,  Lawrence Clevenger ,  Omer Dokumaci ,  Kaushik Kumar ,  Carl Radens ,  Dureseti Chidambarrao

    发明人： Huilong Zhu ,  Lawrence Clevenger ,  Omer Dokumaci ,  Kaushik Kumar ,  Carl Radens ,  Dureseti Chidambarrao

    IPC分类号： H01L29/76

    CPC分类号： H01L29/785 ,  H01L29/1083 ,  H01L29/66795

    摘要： A novel transistor structure and method for fabricating the same. The transistor structure comprises (a) a substrate and (b) a semiconductor region, a gate dielectric region, and a gate region on the substrate, wherein the gate dielectric region is sandwiched between the semiconductor region and the gate region, wherein the semiconductor region is electrically insulated from the gate region by the gate dielectric region, wherein the semiconductor region comprises a channel region and first and second source/drain regions, wherein the channel region is sandwiched between the first and second source/drain regions, wherein the first and second source/drain regions are aligned with the gate region, wherein the channel region and the gate dielectric region (i) share an interface surface which is essentially perpendicular to a top surface of the substrate, and (ii) do not share any interface surface that is essentially parallel to a top surface of the substrate.

    摘要翻译： 一种新颖的晶体管结构及其制造方法。 晶体管结构包括（a）衬底和（b）衬底上的半导体区域，栅极介电区域和栅极区域，其中栅极电介质区域夹在半导体区域和栅极区域之间，其中半导体区域 通过所述栅极电介质区域与所述栅极区域电绝缘，其中所述半导体区域包括沟道区域和第一和第二源极/漏极区域，其中所述沟道区域夹在所述第一和第二源极/漏极区域之间，其中所述第一和/ 第二源极/漏极区域与栅极区域对准，其中沟道区域和栅极电介质区域（i）共享基本上垂直于衬底顶表面的界面，以及（ii）不共享任何界面表面 其基本上平行于衬底的顶表面。

    INTELLIGENT WIRELESS POWER CHARGING SYSTEM
    64.
    发明申请
    INTELLIGENT WIRELESS POWER CHARGING SYSTEM 有权
    智能无线充电系统

    公开(公告)号：US20090312046A1

    公开(公告)日：2009-12-17

    申请号：US12137185

    申请日：2008-06-11

    申请人： Lawrence Clevenger ,  Timothy Dalton ,  Louis Hsu ,  Carl Radens

    发明人： Lawrence Clevenger ,  Timothy Dalton ,  Louis Hsu ,  Carl Radens

    IPC分类号： H04B7/00 ,  H04M1/00

    CPC分类号： H02J50/20 ,  H02J7/025 ,  H02J17/00

    摘要： A system and methodology for intelligent power management of wirelessly networked devices. The system provides for reliable wireless communication via a wireless power charging method and, a method to maintain power capacity of batteries in a wireless device. The batteries are charged via an RF harvesting unit embedded inside the wireless device. An intelligent wireless power charging system further comprises at least two batteries and at least two RF adaptor devices coupled to an AC power line. The first adaptor is set for data communication while the second adaptor is used to transmit the power. In addition, when a first battery is in use during active mode, the second battery is subjected to wireless charging.

    摘要翻译： 一种用于无线网络设备智能电源管理的系统和方法。 该系统通过无线电力充电方法提供可靠的无线通信，以及在无线设备中维持电池的电力容量的方法。 电池通过嵌入在无线设备内部的射频收集单元进行充电。 智能无线电力充电系统还包括耦合到AC电力线的至少两个电池和至少两个RF适配器装置。 第一个适配器设置为数据通信，而第二个适配器用于传输电源。 此外，当在活动模式期间使用第一电池时，对第二电池进行无线充电。

    Intelligent wireless power charging system
    65.
    发明授权
    Intelligent wireless power charging system 有权
    智能无线充电系统

    公开(公告)号：US08024012B2

    公开(公告)日：2011-09-20

    申请号：US12137185

    申请日：2008-06-11

    申请人： Lawrence Clevenger ,  Timothy Dalton ,  Louis Hsu ,  Carl Radens

    发明人： Lawrence Clevenger ,  Timothy Dalton ,  Louis Hsu ,  Carl Radens

    IPC分类号： H04B1/38 ,  H04B1/16

    CPC分类号： H02J50/20 ,  H02J7/025 ,  H02J17/00

    摘要： A system and methodology for intelligent power management of wirelessly networked devices. The system provides for reliable wireless communication via a wireless power charging method and, a method to maintain power capacity of batteries in a wireless device. The batteries are charged via an RF harvesting unit embedded inside the wireless device. An intelligent wireless power charging system further comprises at least two batteries and at least two RF adaptor devices coupled to an AC power line. The first adaptor is set for data communication while the second adaptor is used to transmit the power. In addition, when a first battery is in use during active mode, the second battery is subjected to wireless charging.

    摘要翻译： 一种用于无线网络设备智能电源管理的系统和方法。 该系统通过无线电力充电方法提供可靠的无线通信，以及在无线设备中维持电池的电力容量的方法。 电池通过嵌入在无线设备内部的射频收集单元进行充电。 智能无线电力充电系统还包括耦合到AC电力线的至少两个电池和至少两个RF适配器装置。 第一个适配器设置为数据通信，而第二个适配器用于传输电源。 此外，当在活动模式期间使用第一电池时，对第二电池进行无线充电。

    Compact SRAM cell incorporating refractory metal-silicon-nitrogen resistive elements and method for fabricating
    67.
    发明授权
    Compact SRAM cell incorporating refractory metal-silicon-nitrogen resistive elements and method for fabricating 失效
    含有难熔金属 - 硅 - 氮电阻元件的紧凑SRAM单元及其制造方法

    公开(公告)号：US06777286B2

    公开(公告)日：2004-08-17

    申请号：US10616243

    申请日：2003-07-08

    申请人： Lawrence Clevenger ,  Louis Hsu ,  Li-Kong Wang

    发明人： Lawrence Clevenger ,  Louis Hsu ,  Li-Kong Wang

    IPC分类号： H01L218234

    CPC分类号： H01L27/11 ,  H01L27/1112 ,  Y10S257/903 ,  Y10S257/904

    摘要： A compact SRAM cell that incorporates refractory metal-silicon-nitrogen resistive elements as its pull-up transistors is described which includes a semi-conducting substrate, a pair of NMOS transfer devices formed vertically on the sidewalls of an etched substrate by a metal conductor providing electrical communication between an n+ region in the substrate and a bitline on top, a pair of pull-down nMOS devices on the substrate connected to ground interconnects, and a pair of vertical high-resistive elements formed of a refractory metal-silicon-nitrogen and function as a load for connecting to Vdd. The invention further describes a method for fabricating such compact SRAM cell.

    摘要翻译： 描述了一种紧凑的SRAM单元，其包含难熔金属硅 - 氮电阻元件作为其上拉晶体管，其包括半导体衬底，一对NMOS传输器件，其通过金属导体在蚀刻衬底的侧壁上垂直形成，提供 衬底中n +区和顶部位线之间的电气通信，连接到接地互连的衬底上的一对下拉nMOS器件以及由难熔金属硅形成的一对垂直高电阻元件 - 并且作为连接到Vdd的负载。 本发明还描述了一种用于制造这种紧凑的SRAM单元的方法。

    Semiconductor structure having in-situ formed unit resistors
    68.
    发明授权
    Semiconductor structure having in-situ formed unit resistors 有权
    具有原位形成单元电阻器的半导体结构

    公开(公告)号：US06700203B1

    公开(公告)日：2004-03-02

    申请号：US09686742

    申请日：2000-10-11

    申请人： Cyril Cabral, Jr. ,  Lawrence Clevenger ,  Louis Lu-Chen Hsu ,  Keith Kwong Hon Wong

    发明人： Cyril Cabral, Jr. ,  Lawrence Clevenger ,  Louis Lu-Chen Hsu ,  Keith Kwong Hon Wong

    IPC分类号： H01L2348

    CPC分类号： H01L28/20 ,  H01L27/0688

    摘要： An electronic structure that has in-situ formed unit resistors and a method for fabricating such structure are disclosed. The electronic structure that has in-situ formed unit resistors consists of a first plurality of conductive elements formed in an insulating material layer, a plurality of electrically resistive vias formed on top and in electrical communication with at least one of the first plurality of conductive elements, and a second plurality of conductive elements formed on top of and in electrical communication with at least one of the plurality of electrically resistive vias. The present invention novel structure may further be formed in a multi-level configuration such that multi-level resistors may be connected in-series to provide larger resistance values. The present invention novel structure may further be combined with a capacitor network to form desirable RC circuits.

    摘要翻译： 公开了一种具有原位形成的单位电阻器的电子结构及其制造方法。 具有原位形成的单元电阻器的电子结构由形成在绝缘材料层中的第一多个导电元件组成，多个电阻通孔形成在顶部并与第一多个导电元件中的至少一个电连通 以及形成在所述多个电阻通孔中的至少一个上方并与之电气连通的第二多个导电元件。 本发明的新颖结构可以进一步形成为多电平配置，使得多电平电阻器可以串联连接以提供更大的电阻值。 本发明的新颖结构还可以与电容器网络组合以形成期望的RC电路。